Microwave plasma reactor for manufacturing synthetic diamond material

    公开(公告)号:US10734198B2

    公开(公告)日:2020-08-04

    申请号:US15304366

    申请日:2015-06-10

    Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

    Free-standing non-planar polycrystalline synthetic diamond components and method of fabrication
    2.
    发明授权
    Free-standing non-planar polycrystalline synthetic diamond components and method of fabrication 有权
    独立的非平面多晶合成金刚石组件和制造方法

    公开(公告)号:US09210972B2

    公开(公告)日:2015-12-15

    申请号:US14401958

    申请日:2013-05-23

    Abstract: A free-standing non-planar polycrystalline CVD synthetic diamond component which comprises a nucleation face and a growth face, the nucleation face comprising smaller grains than the growth face, the nucleation face having a surface roughness Ra no more than 50 nm, wherein the free-standing non-planar polycrystalline CVD synthetic diamond component has a longest linear dimension when projected onto a plane of no less than 5 mm and is substantially crack free over at least a central region thereof, wherein the central region is at least 70% of a total area of the free-standing non-planar polycrystalline CVD synthetic diamond component, wherein the central region has no cracks which intersect both external major faces of the free-standing non-planar polycrystalline CVD synthetic diamond component and extend greater than 2 mm in length.

    Abstract translation: 一种独立的非平面多晶CVD合成金刚石组分,其包含成核面和生长面,所述成核面包含比生长面更小的晶粒,成核面的表面粗糙度Ra不大于50nm,其中, 当非投影到不小于5mm的平面上并且在至少其中心区域上基本上无裂纹时,其非常平坦的多晶CVD合成金刚石组分具有最长的线性尺寸,其中中心区域至少为70% 独立非平面多晶CVD合成金刚石组分的总面积,其中中心区域没有与独立的非平面多晶CVD合成金刚石组分的两个主要表面相交并且长度大于2mm的裂纹 。

    LARGE AREA OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAOND WINDOW
    3.
    发明申请
    LARGE AREA OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAOND WINDOW 审中-公开
    大面积光学质量合成多晶二极管窗口

    公开(公告)号:US20140349068A1

    公开(公告)日:2014-11-27

    申请号:US14362847

    申请日:2012-12-13

    Abstract: A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm−1 at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10−4.

    Abstract translation: 包括:最大直线尺寸等于或大于70mm的多晶化学气相沉积(CVD)金刚石晶片; 厚度等于或大于1.3mm; 以及在多晶CVD金刚石晶片的至少中心区域上在室温(标称为298K)测量的以下特征中的一个或两个,所述中心区域是圆形的,以多晶CVD金刚石晶片的中心点为中心,并且具有 多晶CVD金刚石晶片的最大直线尺寸的至少70%的直径:10.6μm处的吸收系数< 0.2cm -1; 和145GHz的介电损耗系数,tanδ≦̸ 2×10-4。

    Microwave plasma reactor for manufacturing synthetic diamond material

    公开(公告)号:US11488805B2

    公开(公告)日:2022-11-01

    申请号:US16457138

    申请日:2019-06-28

    Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition includes a microwave generator configured to generate microwaves at a frequency f, a plasma chamber that defines a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber, a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, and a substrate holder disposed in the plasma chamber and having a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use. The resonance cavity is configured to have a height that supports a TM011 resonant mode at the frequency f and is further configured to have a diameter that satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.

    FREE-STANDING NON-PLANAR POLYCRYSTALLINE SYNTHETIC DIAMOND COMPONENTS AND METHOD OF FABRICATION
    8.
    发明申请
    FREE-STANDING NON-PLANAR POLYCRYSTALLINE SYNTHETIC DIAMOND COMPONENTS AND METHOD OF FABRICATION 审中-公开
    无平面非平面多晶合成金刚石组件和制造方法

    公开(公告)号:US20150110987A1

    公开(公告)日:2015-04-23

    申请号:US14401958

    申请日:2013-05-23

    Abstract: A free-standing non-planar polycrystalline CVD synthetic diamond component which comprises a nucleation face and a growth face, the nucleation face comprising smaller grains than the growth face, the nucleation face having a surface roughness Ra no more than 50 nm, wherein the free-standing non-planar polycrystalline CVD synthetic diamond component has a longest linear dimension when projected onto a plane of no less than 5 mm and is substantially crack free over at least a central region thereof, wherein the central region is at least 70% of a total area of the free-standing non-planar polycrystalline CVD synthetic diamond component, wherein the central region has no cracks which intersect both external major faces of the free-standing non-planar polycrystalline CVD synthetic diamond component and extend greater than 2 mm in length.

    Abstract translation: 一种独立的非平面多晶CVD合成金刚石组分,其包含成核面和生长面,所述成核面包含比生长面更小的晶粒,成核面的表面粗糙度Ra不大于50nm,其中, 当非投影到不小于5mm的平面上并且在至少其中心区域上基本上无裂纹时,其非常平坦的多晶CVD合成金刚石组分具有最长的线性尺寸,其中中心区域至少为70% 独立非平面多晶CVD合成金刚石组分的总面积,其中中心区域没有与独立的非平面多晶CVD合成金刚石组分的两个主要表面相交并且长度大于2mm的裂纹 。

    Electrochemical cell comprising electrically conductive diamond electrodes

    公开(公告)号:US11346012B2

    公开(公告)日:2022-05-31

    申请号:US16063637

    申请日:2016-11-25

    Abstract: An electrochemical cell for treating a fluid, the electrochemical cell comprising: at least two opposing electrodes defining a flow path for the fluid between the electrodes, where at least one of the electrodes is formed of electrically conductive diamond material; drive circuitry configured to apply a potential across the electrodes such that a current flows between the electrodes when the fluid is flowed through the flow path between the electrodes; and a housing in which the electrodes are disposed, the housing comprising pressure seals configured to containing the fluid within the fluid path and a support structure for supporting the electrodes, wherein the support structure and the pressure seals are configured such that the electrochemical cell has an operating pressure in a range 2 to 10 bar within which the electrodes are supported without fracturing and within which the fluid is contained within the flow path, wherein the electrodes are spaced apart by a distance in a range 0.5 mm to 4 mm, and wherein the drive circuitry is configured to apply a potential across the electrodes giving a current density ≥15,000 Amp/m2 over an electrode area of at least 20 cm2 for an operating voltage of no more than 20 V.

    Microwave generators and manufacture of synthetic diamond material

    公开(公告)号:US10707062B2

    公开(公告)日:2020-07-07

    申请号:US15745751

    申请日:2016-08-22

    Abstract: A microwave generator system for use in a microwave plasma enhanced chemical vapour deposition (MPECVD) system, the microwave generator system comprising: a microwave generator unit configured to produce microwaves at an operating power output suitable for fabricating synthetic diamond material via a chemical vapour deposition process; a fault detection system configured to detect a fault in the microwave generator unit which results in a reduction in the operating power output or a change in frequency; and a re-start system configured to restart the microwave generator unit in response to a fault being detected and recover the operating power output or frequency in a time period of less than 10 seconds after the fault in the microwave generator unit which caused the reduction in the operating power output or the change in frequency.

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