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    Processing of Monolayer Materials Via Interfacial Reactions
    1.
    发明申请
    Processing of Monolayer Materials Via Interfacial Reactions 有权
    通过界面反应处理单层材料

    公开(公告)号：US20120288433A1

    公开(公告)日：2012-11-15

    申请号：US13468592

    申请日：2012-05-10

    Applicant: Peter Werner Sutter ,  Eli Anguelova Sutter

    Inventor： Peter Werner Sutter ,  Eli Anguelova Sutter

    IPC: C01B31/02 ,  C01G55/00 ,  B82Y40/00 ,  B82Y30/00

    CPC classification number: C01B31/0484 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C01B32/194 ,  C01B2204/22

    Abstract: A method of forming and processing of graphene is disclosed based on exposure and selective intercalation of the partially graphene-covered metal substrate with atomic or molecular intercalation species such as oxygen (O2) and nitrogen oxide (NO2). The process of intercalation lifts the strong metal-carbon coupling and restores the characteristic Dirac behavior of isolated monolayer graphene. The interface of graphene with metals or metal-decorated substrates also provides for controlled chemical reactions based on novel functionality of the confined space between a metal surface and a graphene sheet.

    Abstract translation: 基于具有原子或分子插层物质（例如氧（O 2）和氮氧化物（NO 2））的部分石墨烯覆盖金属基底的曝光和选择性插层，公开了形成和加工石墨烯的方法。 嵌入的过程提升了强金属 - 碳偶联，并恢复了孤立单层石墨烯的特征狄拉克行为。 石墨烯与金属或金属装饰基材的界面还提供了基于金属表面和石墨烯片之间的限制空间的新功能的受控化学反应。

    Apparatus for dispensing material
    2.
    发明授权
    Apparatus for dispensing material 失效
    用于分配材料的设备

    公开(公告)号：US07972560B2

    公开(公告)日：2011-07-05

    申请号：US12102370

    申请日：2008-04-14

    Applicant: Peter Werner Sutter ,  Eli Anguelova Sutter

    Inventor： Peter Werner Sutter ,  Eli Anguelova Sutter

    IPC: B01L3/02

    CPC classification number: B01L3/0275 ,  B01L3/0268 ,  B01L2200/12 ,  B01L2300/12 ,  B01L2400/0442 ,  Y10S977/762 ,  Y10S977/888 ,  Y10S977/89

    Abstract: An apparatus capable of dispensing drops of material with volumes on the order of zeptoliters is described. In some embodiments of the inventive pipette the size of the droplets so dispensed is determined by the size of a hole, or channel, through a carbon shell encapsulating a reservoir that contains material to be dispensed. The channel may be formed by irradiation with an electron beam or other high-energy beam capable of focusing to a spot size less than about 5 nanometers. In some embodiments, the dispensed droplet remains attached to the pipette by a small thread of material, an atomic scale meniscus, forming a virtually free-standing droplet. In some embodiments the droplet may wet the pipette tip and take on attributes of supported drops. Methods for fabricating and using the pipette are also described.

    Abstract translation: 描述了能够分配具有齐格列斯数量级的体积的材料滴的装置。 在本发明移液管的一些实施例中，如此分配的液滴的尺寸由孔或通道的大小决定，通过包封包含要分配材料的储存器的碳壳。 可以通过用能够聚焦到小于约5纳米的光斑尺寸的电子束或其它高能束照射来形成通道。 在一些实施方案中，分配的液滴通过形成实际上独立的液滴的材料的小线（原子尺度半月板）附着到移液管。 在一些实施例中，液滴可以润湿移液管尖端并承担所支持的液滴的属性。 还描述了用于制造和使用移液管的方法。

    Apparatus for Dispensing Material
    3.
    发明申请
    Apparatus for Dispensing Material 失效
    点胶装置

    公开(公告)号：US20090257921A1

    公开(公告)日：2009-10-15

    申请号：US12102370

    申请日：2008-04-14

    Applicant: Peter Werner Sutter ,  Eli Anguelova Sutter

    Inventor： Peter Werner Sutter ,  Eli Anguelova Sutter

    IPC: B01L3/02 ,  B05D3/06 ,  B05D7/20 ,  B05D3/00 ,  B05B11/02

    CPC classification number: B01L3/0275 ,  B01L3/0268 ,  B01L2200/12 ,  B01L2300/12 ,  B01L2400/0442 ,  Y10S977/762 ,  Y10S977/888 ,  Y10S977/89

    Abstract: An apparatus capable of dispensing drops of material with volumes on the order of zeptoliters is described. In some embodiments of the inventive pipette the size of the droplets so dispensed is determined by the size of a hole, or channel, through a carbon shell encapsulating a reservoir that contains material to be dispensed. The channel may be formed by irradiation with an electron beam or other high-energy beam capable of focusing to a spot size less than about 5 nanometers. In some embodiments, the dispensed droplet remains attached to the pipette by a small thread of material, an atomic scale meniscus, forming a virtually free-standing droplet. In some embodiments the droplet may wet the pipette tip and take on attributes of supported drops. Methods for fabricating and using the pipette are also described.

    Abstract translation: 描述了能够分配具有齐格列斯数量级的体积的材料滴的装置。 在本发明移液管的一些实施例中，如此分配的液滴的尺寸由孔或通道的大小决定，通过包封包含要分配材料的储存器的碳壳。 可以通过用能够聚焦到小于约5纳米的光斑尺寸的电子束或其它高能束照射来形成通道。 在一些实施方案中，分配的液滴通过形成实际上独立的液滴的材料的小线（原子尺度半月板）附着到移液管。 在一些实施例中，液滴可以润湿移液管尖端并承担所支持的液滴的属性。 还描述了用于制造和使用移液管的方法。

    Segmented nanowires displaying locally controllable properties
    5.
    发明授权
    Segmented nanowires displaying locally controllable properties 失效
    分段纳米线显示局部可控性质

    公开(公告)号：US08389387B2

    公开(公告)日：2013-03-05

    申请号：US12683054

    申请日：2010-01-06

    Applicant: Eli Anguelova Sutter ,  Peter Werner Sutter

    Inventor： Eli Anguelova Sutter ,  Peter Werner Sutter

    IPC: H01L21/20 ,  H01L21/36

    CPC classification number: H01L29/66977 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  Y10S977/762

    Abstract: Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au—Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.

    Abstract translation: 纳米线的气 - 液 - 固体生长被定制以使用为纳米级材料确定的相图来实现复杂的一维材料几何形状。 具有恒定组成的分段一维纳米线显示由纳米线的直径确定的局部可变电子带结构。 利用分段纳米线的独特的电气和光学特性形成电子和光电器件。 使用金 - 锗作为模型系统，原位透射电子显微镜确定了在锗纳米线（NW）的尖端处的纳米级Au-Ge合金滴，确定其温度依赖平衡组成的相图部分。 然后使用纳米级相图来确定NW与液滴之间的材料交换。 纳米尺度相的相图显着偏离了大块合金。

    Processing of monolayer materials via interfacial reactions
    7.
    发明授权
    Processing of monolayer materials via interfacial reactions 有权
    通过界面反应处理单层材料

    公开(公告)号：US08728433B2

    公开(公告)日：2014-05-20

    申请号：US13468592

    申请日：2012-05-10

    Applicant: Peter Werner Sutter ,  Eli Anguelova Sutter

    Inventor： Peter Werner Sutter ,  Eli Anguelova Sutter

    IPC: C09C1/56

    CPC classification number: C01B31/0484 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C01B32/194 ,  C01B2204/22

    Abstract: A method of forming and processing of graphene is disclosed based on exposure and selective intercalation of the partially graphene-covered metal substrate with atomic or molecular intercalation species such as oxygen (O2) and nitrogen oxide (NO2). The process of intercalation lifts the strong metal-carbon coupling and restores the characteristic Dirac behavior of isolated monolayer graphene. The interface of graphene with metals or metal-decorated substrates also provides for controlled chemical reactions based on novel functionality of the confined space between a metal surface and a graphene sheet.

    Abstract translation: 基于具有原子或分子插层物质（例如氧（O 2）和氮氧化物（NO 2））的部分石墨烯覆盖金属基底的曝光和选择性插层，公开了形成和加工石墨烯的方法。 嵌入的过程提升了强金属 - 碳偶联，并恢复了孤立单层石墨烯的特征狄拉克行为。 石墨烯与金属或金属装饰基材的界面还提供了基于金属表面和石墨烯片之间的限制空间的新功能的受控化学反应。

    Segmented Nanowires Displaying Locally Controllable Properties
    8.
    发明申请
    Segmented Nanowires Displaying Locally Controllable Properties 失效
    分段纳米线显示本地可控属性

    公开(公告)号：US20100171096A1

    公开(公告)日：2010-07-08

    申请号：US12683054

    申请日：2010-01-06

    Applicant: Eli Anguelova Sutter ,  Peter Werner Sutter

    Inventor： Eli Anguelova Sutter ,  Peter Werner Sutter

    IPC: H01L29/66 ,  H01L21/205

    CPC classification number: H01L29/66977 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  Y10S977/762

    Abstract: Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au—Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.

    Abstract translation: 纳米线的气 - 液 - 固体生长被定制以使用为纳米级材料确定的相图来实现复杂的一维材料几何形状。 具有恒定组成的分段一维纳米线显示由纳米线的直径确定的局部可变电子带结构。 利用分段纳米线的独特的电气和光学特性形成电子和光电器件。 使用金 - 锗作为模型系统，原位透射电子显微镜确定了在锗纳米线（NW）的尖端处的纳米级Au-Ge合金滴，确定其温度依赖平衡组成的相图部分。 然后使用纳米级相图来确定NW与液滴之间的材料交换。 纳米尺度相的相图显着偏离了大块合金。

    Stable and metastable nanowires displaying locally controllable properties
    10.
    发明授权
    Stable and metastable nanowires displaying locally controllable properties 有权
    显示局部可控性质的稳定和亚稳态纳米线

    公开(公告)号：US08890115B2

    公开(公告)日：2014-11-18

    申请号：US13526239

    申请日：2012-06-18

    Applicant: Eli Anguelova Sutter ,  Peter Werner Sutter

    Inventor： Eli Anguelova Sutter ,  Peter Werner Sutter

    IPC: H01L29/06 ,  H01L31/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y20/00 ,  B82Y10/00

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0669 ,  H01L29/0673

    Abstract: Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au—Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.

    Abstract translation: 纳米线的气 - 液 - 固体生长被定制以使用为纳米级材料确定的相图来实现复杂的一维材料几何形状。 具有恒定组成的分段一维纳米线显示由纳米线的直径确定的局部可变电子带结构。 利用分段纳米线的独特的电气和光学特性形成电子和光电器件。 使用金 - 锗作为模型系统，原位透射电子显微镜确定了在锗纳米线（NW）的尖端处的纳米级Au-Ge合金滴，确定其温度依赖平衡组成的相图部分。 然后使用纳米级相图来确定NW与液滴之间的材料交换。 纳米尺度相的相图显着偏离了大块合金。

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