公开(公告)号：US08941077B2

公开(公告)日：2015-01-27

申请号：US13280162

申请日：2011-10-24

申请人： Nicholas White ,  Zhimin Wan ,  Erik Collart

发明人： Nicholas White ,  Zhimin Wan ,  Erik Collart

IPC分类号： H01J1/88 ,  H01J3/26 ,  H01J3/04 ,  H01J37/317

CPC分类号： H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/1472 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/151 ,  H01J2237/303 ,  H01J2237/31701

摘要： A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

摘要翻译： 公开了一种减速装置，能够使短点光束或高色带光束减速。 在任一种情况下，都会控制趋向于降低光束轮廓形状的效果。 提供了用于将离子束屏蔽到外部电位的盖子。 其位置和电位可调的电极设置在梁的相对两侧，以确保减速和偏转电场的形状不会显着偏离最佳形状，即使存在显着的空间电荷高 目前低能量的重离子束。

公开(公告)号：US20120097861A1

公开(公告)日：2012-04-26

申请号：US13280162

申请日：2011-10-24

申请人： Nicholas White ,  Zhimin Wan ,  Erik Collart

发明人： Nicholas White ,  Zhimin Wan ,  Erik Collart

IPC分类号： H01J3/20 ,  H01J3/14 ,  H01J3/26

CPC分类号： H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/1472 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/151 ,  H01J2237/303 ,  H01J2237/31701

摘要： A deceleration apparatus capable of decelerating a short spot beam or a tall. ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

摘要翻译： 减速装置，能够使短点梁或高度减速。 公开了带状束。 在任一种情况下，都会控制趋向于降低光束轮廓形状的效果。 提供了用于将离子束屏蔽到外部电位的盖子。 其位置和电位可调的电极设置在梁的相对两侧，以确保减速和偏转电场的形状不会显着偏离最佳形状，即使存在显着的空间电荷高 目前低能量的重离子束。

公开(公告)号：US08304330B2

公开(公告)日：2012-11-06

申请号：US13351334

申请日：2012-01-17

申请人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

发明人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC分类号： H01L21/425

CPC分类号： C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

摘要： Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

摘要翻译： 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始注入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US08039374B2

公开(公告)日：2011-10-18

申请号：US12727573

申请日：2010-03-19

申请人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

发明人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC分类号： H01L21/425

CPC分类号： H01L21/265 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67248 ,  Y10S438/905

摘要： Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

摘要翻译： 提供了低温离子注入技术，以提高产量。 具体地说，在植入过程开始之前，背面气体的压力可以暂时地，持续地或连续增加，使得晶片可以从室温快速冷却到基本等于规定的植入温度。 此外，在真空排气过程之后，晶片可以在晶片移出离子注入机之前在加载锁定室中等待额外的时间，以便允许晶片温度快速达到更高的温度以使晶片上的水冷凝最小化 表面。 此外，为了在晶片温度变化期间精确地监视晶片温度，可以使用非接触型温度测量装置以最小化的冷凝实时监测晶片温度。

公开(公告)号：US08124508B2

公开(公告)日：2012-02-28

申请号：US12750983

申请日：2010-03-31

申请人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

发明人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC分类号： H01L21/425

CPC分类号： C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

摘要： Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

公开(公告)号：US08890506B2

公开(公告)日：2014-11-18

申请号：US13227425

申请日：2011-09-07

申请人： Peter M. Kopalidis ,  Zhimin Wan

发明人： Peter M. Kopalidis ,  Zhimin Wan

IPC分类号： G01N27/00 ,  G01R19/00 ,  G01N27/62

CPC分类号： G01N27/62 ,  G01R19/0061

摘要： Techniques for measuring ion beam current, especially for measuring low energy ion beam current, are disclosed. The technique may be realized as an ion beam current measurement apparatus having at least a planar Faraday cup and a voltage assembly. The planar Faraday cup is located close to an inner surface of a chamber wall, and intersects an ion beam path. The voltage assembly is located outside a chamber having the chamber wall. Therefore, by properly adjusting the electric voltage applied on the planar Faraday cup by the voltage assembly, some undesired charged particles may be adequately suppressed. Further, the planar Faraday cup may surround an opening of a non-planar Faraday cup which may be any conventional Faraday cup. Therefore, the whole ion beam may be received and measured well by the larger cross-section area of the planar Faraday cup on the ion beam path.

摘要翻译： 公开了用于测量离子束电流的技术，特别是用于测量低能量离子束电流的技术。 该技术可以被实现为具有至少一个平面法拉第杯和电压组件的离子束电流测量装置。 平面法拉第杯位于靠近室壁的内表面并与离子束路相交。 电压组件位于具有室壁的室外。 因此，通过适当地调整通过电压组件施加在平面法拉第杯上的电压，可以充分抑制一些不期望的带电粒子。 此外，平面法拉第杯可以围绕可以是任何常规法拉第杯的非平面法拉第杯的开口。 因此，可以通过离子束路径上的平面法拉第杯的较大的横截面面积良好地接收和测量整个离子束。

公开(公告)号：US06918351B2

公开(公告)日：2005-07-19

申请号：US10133140

申请日：2002-04-26

申请人： Jiong Chen ,  Zhimin Wan

发明人： Jiong Chen ,  Zhimin Wan

IPC分类号： H01J37/317 ,  C23C16/00 ,  H01G37/317

CPC分类号： H01J37/3171 ,  H01J2237/0041

摘要： This invention discloses an ion implantation apparatus that has an ion source and an ion extraction device for extracting an ion beam therefrom. The ion implantation apparatus includes an ion beam sweeping-and-deflecting device disposed immediately next to the ion extraction device. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping device. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting device is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation.

摘要翻译： 本发明公开了一种具有离子源和离子提取装置的离子注入装置，用于从其中提取离子束。 离子注入装置包括紧邻离子提取装置设置的离子束扫掠和偏转装置。 离子注入装置还包括用于引导穿过偏转扫掠装置的离子束的磁分析器。 质量分析仪还用于选择具有特定质荷比的离子以通过质量狭缝投射到基底上。 施加扫掠和偏转装置以使离子束偏转穿过磁性质量分析器和质量狭缝，以将离子束扫过衬底的表面以进行离子注入。

公开(公告)号：US08669539B2

公开(公告)日：2014-03-11

申请号：US12748877

申请日：2010-03-29

申请人： Zhimin Wan ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

发明人： Zhimin Wan ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

IPC分类号： H01J37/317 ,  H01J37/02

CPC分类号： C23C14/48 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542 ,  H01J2237/31711

摘要： A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

摘要翻译： 在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。 因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。 此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节 简单地通过机械操作。

公开(公告)号：US09009939B2

公开(公告)日：2015-04-21

申请号：US12479288

申请日：2009-06-05

申请人： Peter Mok ,  Ko-Chuan Jen ,  Zhimin Wan

发明人： Peter Mok ,  Ko-Chuan Jen ,  Zhimin Wan

IPC分类号： B25B27/14 ,  H01J37/08 ,  H01L21/687 ,  H01J37/20 ,  H01J37/317 ,  H01L21/67

CPC分类号： H01L21/68764 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/20207 ,  H01J2237/20228 ,  H01J2237/204 ,  H01L21/67213 ,  Y10T29/53961

摘要： A system and a method for moving a wafer during scanning the wafer by an ion beam. The proposed system includes an extendable/retractable arm, a holding apparatus and a driving apparatus. At least a length of the extendable/retractable arm is adjustable. The holding apparatus is capable of holding a wafer and is fixed on a specific portion of the extendable/retractable arm. Furthermore, the driving apparatus is capable of extending and/or retracting the extendable/retractable arm, such that the holding apparatus is moved together with the specific portion. In addition, the proposed method includes the following steps. First, hold the wafer by a holding apparatus fixed on a specific portion of an extendable/retractable arm. After that, adjust a length of the extendable/retractable. Therefore, the holding apparatus, i.e. the wafer, can be moved by the extension/retraction of the extendable/retractable arm.

摘要翻译： 一种用于在通过离子束扫描晶片期间移动晶片的系统和方法。 所提出的系统包括可伸缩臂，保持装置和驱动装置。 可伸缩臂的至少一段长度是可调节的。 保持装置能够保持晶片并固定在可伸缩臂的特定部分上。 此外，驱动装置能够延伸和/或缩回可伸缩臂，使得保持装置与特定部分一起移动。 此外，所提出的方法包括以下步骤。 首先，通过固定在可伸缩臂的特定部分上的保持装置来保持晶片。 之后，调整可伸缩的长度。 因此，保持装置即晶片可以通过伸缩臂的伸缩来移动。

公开(公告)号：US07745804B1

公开(公告)日：2010-06-29

申请号：US12371182

申请日：2009-02-13

申请人： Zhimin Wan

发明人： Zhimin Wan

IPC分类号： H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J37/3023 ,  H01J2237/20214 ,  H01J2237/24528 ,  H01J2237/3045 ,  H01J2237/31701 ,  H01L21/265

摘要： An ion implantation method for achieving angular uniformity throughout a workpiece and application thereof are provided. The ion beam has at least one beamlet striking the workpiece surface with corresponding incident angles. The workpiece is mapped to an imaginary planar coordinate system. The incident angle of a center beamlet of the ion beam has a projection on the coordinate system forming a projection angle with an axis thereof. A workpiece orientation of the workpiece is adjusted based on the projection angle such that the contribution of each beamlet to the overall ion beam intensity upon striking the workpiece surface is rendered substantially the same from respective directions of each of the coordinate axes.

摘要翻译： 提供了一种用于实现整个工件的角均匀性的离子注入方法及其应用。 离子束具有至少一个小射束以相应的入射角撞击工件表面。 工件被映射到虚拟平面坐标系。 离子束的中心子束的入射角在坐标系上具有与其轴的投影角度的投影。 基于投影角度来调整工件的工件取向，使得每个子束对冲击工件表面的整个离子束强度的贡献从每个坐标轴的各个方向变得基本相同。