公开(公告)号：US20090206440A1

公开(公告)日：2009-08-20

申请号：US12403808

申请日：2009-03-13

申请人： Hans-Joachim Schulze ,  Frank Hille ,  Thomas Raker

发明人： Hans-Joachim Schulze ,  Frank Hille ,  Thomas Raker

IPC分类号： H01L23/58

CPC分类号： H01L29/0615 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region.

摘要翻译： 半导体器件具有重掺杂衬底，并且具有设置在衬底上的具有第一导电类型的掺杂硅的上层，上层具有上表面并且包括具有第二相反导电类型的阱区的有源区。 边缘终止区域具有第二导电类型的连接终止延伸区域（JTE）区域，该区域具有远离阱区域延伸的部分，以及设置在连接终端的上表面处的第二导电类型的多个场限制环 延伸区域。

公开(公告)号：US20090085103A1

公开(公告)日：2009-04-02

申请号：US11864238

申请日：2007-09-28

申请人： Frank Hille ,  Carsten Schaeffer ,  Frank Pfirsch ,  Holger Ruething

发明人： Frank Hille ,  Carsten Schaeffer ,  Frank Pfirsch ,  Holger Ruething

IPC分类号： H01L29/94 ,  H01L21/00

CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7805 ,  H01L29/7813

摘要： A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor body, and an insulated gate electrode. The semiconductor body has a contact groove for the first electrode in an intermediate oxide layer. Highly doped zones of a first conduction type are located in edge regions of the source connection zone. Below the highly doped zones of the first conduction type, there are highly doped zones of a body zone with a complementary conduction type. In a central region of the source connection zone, the body zone has a net charge carrier concentration with a complementary conduction type which is lower than the charge carrier concentration in the edge regions of the source connection zone.

摘要翻译： 公开了一种半导体器件和制造方法。 在一个实施例中，半导体器件包括位于半导体本体表面上的第一电极和第二电极以及绝缘栅电极。 半导体本体具有用于中间氧化物层中的第一电极的接触槽。 第一导电类型的高掺杂区域位于源极连接区域的边缘区域。 在第一导电类型的高掺杂区之下，存在具有互补导电类型的体区的高掺杂区。 在源极连接区域的中心区域，体区具有互补导电类型的净电荷载流子浓度，该互补导电类型低于源极连接区域的边缘区域中的载流子浓度。

公开(公告)号：US1575482A

公开(公告)日：1926-03-02

申请号：US1140225

申请日：1925-02-25

申请人： FRANK HILLE

发明人： FRANK HILLE

IPC分类号： F24F5/00

CPC分类号： F24F5/0007

公开(公告)号：US08741750B2

公开(公告)日：2014-06-03

申请号：US12571037

申请日：2009-09-30

申请人： Frank Hille ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

发明人： Frank Hille ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

IPC分类号： H01L21/26

CPC分类号： H01L21/26506 ,  H01L21/3242 ,  H01L29/66128 ,  H01L29/8611

摘要： A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T2>T1 and the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors.

摘要翻译： 本发明提供一种制造半导体器件的方法。 半导体本体在p导电区和n导电区之间包括在半导体本体中的深度T1的p导电区，n导电区和pn结。 该方法包括提供半导体本体，通过在第一方向上将形成受主的杂质扩散到半导体本体中而产生p掺杂区，并通过沿第一方向注入质子来产生n导电区， 半导体本体进入深度T2> T1并随后对半导体主体进行热处理，以形成氢诱导的供体。

公开(公告)号：US08344415B2

公开(公告)日：2013-01-01

申请号：US11924115

申请日：2007-10-25

申请人： Holger Ruething ,  Frank Pfirsch ,  Armin Willmeroth ,  Frank Hille ,  Hans-Joachim Schulze

发明人： Holger Ruething ,  Frank Pfirsch ,  Armin Willmeroth ,  Frank Hille ,  Hans-Joachim Schulze

IPC分类号： H01L29/739

CPC分类号： H01L29/0696 ,  H01L21/22 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/7395 ,  H01L29/7397

摘要： A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.

摘要翻译： 公开了半导体部件。 一个实施例提供一种半导体本体，其具有在后侧具有至少一个第一导电类型区域和至少一个第二导电类型区域的单元区域。 提供了单元区域中第一导电类型的漂移区。 漂移区包含至少一个区域，电荷载体在半导体组件的工作模式中以一个极性流动，并且电荷载体不以相反极性的半导体组件的工作模式流动。

公开(公告)号：US20120315747A1

公开(公告)日：2012-12-13

申请号：US13558467

申请日：2012-07-26

申请人： Anton MAUDER ,  Hans-Joachim SCHULZE ,  Frank HILLE ,  Holger SCHULZE ,  Manfred PFAFFENLEHNER ,  Carsten SCHÄFFER ,  Franz-Josef NIEDERNOSTHEIDE

发明人： Anton MAUDER ,  Hans-Joachim SCHULZE ,  Frank HILLE ,  Holger SCHULZE ,  Manfred PFAFFENLEHNER ,  Carsten SCHÄFFER ,  Franz-Josef NIEDERNOSTHEIDE

IPC分类号： H01L21/425

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

公开(公告)号：US08003502B2

公开(公告)日：2011-08-23

申请号：US12416935

申请日：2009-04-02

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

IPC分类号： H01L21/425

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

公开(公告)号：US07768093B2

公开(公告)日：2010-08-03

申请号：US12403808

申请日：2009-03-13

申请人： Hans-Joachim Schulze ,  Frank Hille ,  Thomas Raker

发明人： Hans-Joachim Schulze ,  Frank Hille ,  Thomas Raker

IPC分类号： H01L23/58

CPC分类号： H01L29/0615 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region.

摘要翻译： 半导体器件具有重掺杂衬底，并且具有设置在衬底上的具有第一导电类型的掺杂硅的上层，上层具有上表面并且包括具有第二相反导电类型的阱区的有源区。 边缘终止区域具有第二导电类型的连接终止延伸区域（JTE）区域，该区域具有远离阱区域延伸的部分，以及设置在连接终端的上表面处的第二导电类型的多个场限制环 延伸区域。

公开(公告)号：US20100087053A1

公开(公告)日：2010-04-08

申请号：US12571037

申请日：2009-09-30

申请人： Frank Hille ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

发明人： Frank Hille ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

IPC分类号： H01L21/26 ,  H01L21/22

CPC分类号： H01L21/26506 ,  H01L21/3242 ,  H01L29/66128 ,  H01L29/8611

摘要： A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T2>T1 and the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors.

摘要翻译： 本发明提供一种制造半导体器件的方法。 半导体本体在p导电区和n导电区之间包括在半导体本体中的深度T1的p导电区，n导电区和pn结。 该方法包括提供半导体本体，通过在第一方向上将形成受主的杂质扩散到半导体本体中而产生p掺杂区，并通过沿第一方向注入质子来产生n导电区， 半导体本体进入深度T2> T1并随后对半导体主体进行热处理，以形成氢诱导的供体。

公开(公告)号：US20090186462A1

公开(公告)日：2009-07-23

申请号：US12416935

申请日：2009-04-02

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaffer ,  Franz-Josef Niedernostheide

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaffer ,  Franz-Josef Niedernostheide

IPC分类号： H01L21/31

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。