公开(公告)号：US08431988B2

公开(公告)日：2013-04-30

申请号：US11262483

申请日：2005-10-28

申请人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rüb ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schäffer

发明人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rüb ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schäffer

IPC分类号： H01L29/66

CPC分类号： H01L29/66689 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66704 ,  H01L29/78 ,  H01L29/7825

摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

摘要翻译： 横向沟槽晶体管具有半导体本体，其具有嵌入与半导体本体隔离的栅电极的源极区，源极接触，体区，漏极区和栅极沟槽。 重掺杂半导体区域设置在体区内或与其相邻，并且与源极接触电连接，并且其掺杂剂类型对应于身体区域。

公开(公告)号：US20120315747A1

公开(公告)日：2012-12-13

申请号：US13558467

申请日：2012-07-26

申请人： Anton MAUDER ,  Hans-Joachim SCHULZE ,  Frank HILLE ,  Holger SCHULZE ,  Manfred PFAFFENLEHNER ,  Carsten SCHÄFFER ,  Franz-Josef NIEDERNOSTHEIDE

发明人： Anton MAUDER ,  Hans-Joachim SCHULZE ,  Frank HILLE ,  Holger SCHULZE ,  Manfred PFAFFENLEHNER ,  Carsten SCHÄFFER ,  Franz-Josef NIEDERNOSTHEIDE

IPC分类号： H01L21/425

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

公开(公告)号：US07514750B2

公开(公告)日：2009-04-07

申请号：US11241866

申请日：2005-09-30

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

IPC分类号： H01L23/62

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device according to the invention has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

摘要翻译： 根据本发明的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

公开(公告)号：US06541818B2

公开(公告)日：2003-04-01

申请号：US09883808

申请日：2001-06-18

申请人： Frank Pfirsch ,  Carsten Schäffer

发明人： Frank Pfirsch ,  Carsten Schäffer

IPC分类号： H01L2976

CPC分类号： H01L29/7802 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/66348 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7813

摘要： A field effect transistor configuration with a trench gate electrode and a method for producing the same. An additional highly doped layer is provided in the body region under the source. The layer is used for influencing the conductibility of the source or the threshold voltage in the channel region. Breakdown currents and latch-up effects can thereby be prevented.

公开(公告)号：US07253475B2

公开(公告)日：2007-08-07

申请号：US11009537

申请日：2004-12-10

申请人： Carsten Schäffer

发明人： Carsten Schäffer

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L23/5256 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/7802 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： Transistor cells (2) of a power transistor component are in each case provided with a gate conductor structure that forms a gate electrode (52) in sections and is connected via a gate cell terminal (43) to a gate wiring line (81) led to a gate terminal (44) of the power transistor component (1). The gate conductor structure (5) has a desired fusible section (51) with an increased resistance, which is arranged within a cavity. The resistance of the desired fusible section (51) can be set in such a way that, in the event of a current loading of the magnitude of a value that is typical of a defective gate dielectric (41), the gate conductor section (5) is interrupted in the desired fusible section (51) and the gate electrode (52) is disconnected from the gate wiring line (81). The power transistor component can be produced with high yield and has a smaller number of failures during application operation.

摘要翻译： 功率晶体管组件的晶体管单元（2）在每种情况下都设置有栅极导体结构，该栅极导体结构以部分形成栅电极（52），并且经由栅极电池端子（43）连接到栅极布线（81） 到功率晶体管组件（1）的栅极端子（44）。 栅极导体结构（5）具有设置在空腔内的具有增加的电阻的期望的可熔部分（51）。 所希望的可熔部分（51）的电阻可以这样设置，即在电流负载值为缺陷栅极电介质（41）典型值的电流的情况下，栅极导体部分（5） ）在期望的可熔部分（51）中断，并且栅电极（52）与栅极布线（81）断开。 功率晶体管组件可以以高产量生产并且在应用操作期间具有较少数量的故障。

公开(公告)号：US08367532B2

公开(公告)日：2013-02-05

申请号：US13558467

申请日：2012-07-26

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

IPC分类号： H01L21/265

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

公开(公告)号：US20110275202A1

公开(公告)日：2011-11-10

申请号：US13186470

申请日：2011-07-20

申请人： Anton MAUDER ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

发明人： Anton MAUDER ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

IPC分类号： H01L21/425

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

公开(公告)号：US06815769B2

公开(公告)日：2004-11-09

申请号：US10352825

申请日：2003-01-28

申请人： Frank Pfirsch ,  Carsten Schäffer

发明人： Frank Pfirsch ,  Carsten Schäffer

IPC分类号： H01L2976

CPC分类号： H01L29/402 ,  H01L29/0619 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/66348 ,  H01L29/7397

摘要： A trench power semiconductor component, in particular an IGBT, has an electrode (4) in a trench (3) that is laterally divided into a section (10) that serves as a gate and a section (11) that is connected to the source metallization (6). A method for making the trench power semiconductor component is also included.

摘要翻译： 沟槽功率半导体元件，特别是IGBT，在沟槽（3）中具有横向分为用作栅极的部分（10）和连接到源极的部分（11）的电极（4） 金属化（6）。 还包括制造沟槽功率半导体部件的方法。