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    Semiconductor device and Fabrication method
    2.
    发明申请
    Semiconductor device and Fabrication method 有权
    半导体器件及制作方法

    公开(公告)号：US20090186462A1

    公开(公告)日：2009-07-23

    申请号：US12416935

    申请日：2009-04-02

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaffer ,  Franz-Josef Niedernostheide

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/31

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

    Semiconductor device and fabrication method
    3.
    发明授权
    Semiconductor device and fabrication method 有权
    半导体器件及其制造方法

    公开(公告)号：US08252671B2

    公开(公告)日：2012-08-28

    申请号：US13186470

    申请日：2011-07-20

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/425

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

    Semiconductor device and fabrication method
    4.
    发明授权
    Semiconductor device and fabrication method 有权
    半导体器件及其制造方法

    公开(公告)号：US08367532B2

    公开(公告)日：2013-02-05

    申请号：US13558467

    申请日：2012-07-26

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/265

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

    Semiconductor device and fabrication method
    5.
    发明授权
    Semiconductor device and fabrication method 有权
    半导体器件及其制造方法

    公开(公告)号：US08003502B2

    公开(公告)日：2011-08-23

    申请号：US12416935

    申请日：2009-04-02

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/425

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

    Semiconductor device and fabrication method suitable therefor
    6.
    发明授权
    Semiconductor device and fabrication method suitable therefor 有权
    适用于其的半导体器件及其制造方法

    公开(公告)号：US07514750B2

    公开(公告)日：2009-04-07

    申请号：US11241866

    申请日：2005-09-30

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L23/62

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device according to the invention has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 根据本发明的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

    Semiconductor device with trench structures including a recombination structure and a fill structure
    7.
    发明授权
    Semiconductor device with trench structures including a recombination structure and a fill structure 有权
    具有包括复合结构和填充结构的沟槽结构的半导体器件

    公开(公告)号：US08921931B2

    公开(公告)日：2014-12-30

    申请号：US13487540

    申请日：2012-06-04

    申请人： Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

    发明人： Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

    IPC分类号： H01L29/66 ,  H01L29/78

    CPC分类号： H01L29/861 ,  H01L21/761 ,  H01L21/76224 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/872

    摘要： A semiconductor body of a semiconductor device includes a doped layer of a first conductivity type and one or more doped zones of a second conductivity type. The one or more doped zones are formed between the doped layer and the first surface of a semiconductor body. Trench structures extend from one of the first and the second opposing surface into the semiconductor body. The trench structures are arranged between portions of the semiconductor body which are electrically connected to each other. The trench structures may be arranged for mitigating mechanical stress, locally controlling charge carrier mobility, locally controlling a charge carrier recombination rate and/or shaping buried diffusion zones.

    摘要翻译： 半导体器件的半导体本体包括第一导电类型的掺杂层和第二导电类型的一个或多个掺杂区。 一个或多个掺杂区形成在半导体本体的掺杂层和第一表面之间。 沟槽结构从第一和第二相对表面之一延伸到半导体本体中。 沟槽结构布置在彼此电连接的半导体本体的部分之间。 沟槽结构可以被布置用于减轻机械应力，局部地控制电荷载流子迁移率，局部地控制电荷载流子复合速率和/或成形掩埋扩散区。

    Semiconductor Device with Trench Structures
    9.
    发明申请
    Semiconductor Device with Trench Structures 有权
    具有沟槽结构的半导体器件

    公开(公告)号：US20130320487A1

    公开(公告)日：2013-12-05

    申请号：US13487540

    申请日：2012-06-04

    申请人： Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

    发明人： Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze ,  Holger Schulze

    IPC分类号： H01L29/06 ,  H01L21/762

    CPC分类号： H01L29/861 ,  H01L21/761 ,  H01L21/76224 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/872

    摘要： A semiconductor body of a semiconductor device includes a doped layer of a first conductivity type and one or more doped zones of a second conductivity type. The one or more doped zones are formed between the doped layer and the first surface of a semiconductor body. Trench structures extend from one of the first and the second opposing surface into the semiconductor body. The trench structures are arranged between portions of the semiconductor body which are electrically connected to each other. The trench structures may be arranged for mitigating mechanical stress, locally controlling charge carrier mobility, locally controlling a charge carrier recombination rate and/or shaping buried diffusion zones.

    摘要翻译： 半导体器件的半导体本体包括第一导电类型的掺杂层和第二导电类型的一个或多个掺杂区。 一个或多个掺杂区形成在半导体本体的掺杂层和第一表面之间。 沟槽结构从第一和第二相对表面之一延伸到半导体本体中。 沟槽结构布置在彼此电连接的半导体本体的部分之间。 沟槽结构可以被布置用于减轻机械应力，局部地控制电荷载流子迁移率，局部地控制电荷载流子复合速率和/或成形掩埋扩散区。