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公开(公告)号：US09548281B2
公开(公告)日：2017-01-17
申请号：US13269310
申请日：2011-10-07
申请人： Ming-Chih Yew , Wen-Yi Lin , Fu-Jen Li , Po-Yao Lin
发明人： Ming-Chih Yew , Wen-Yi Lin , Fu-Jen Li , Po-Yao Lin
IPC分类号： H01L23/48 , H01L21/28 , H01L23/00 , H01L23/488 , H01L23/31 , H01L23/525
CPC分类号： H01L24/06 , H01L23/3157 , H01L23/525 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05008 , H01L2224/05012 , H01L2224/05022 , H01L2224/05541 , H01L2224/05552 , H01L2224/05555 , H01L2224/05569 , H01L2224/05572 , H01L2224/061 , H01L2224/06137 , H01L2224/06179 , H01L2924/00014 , H01L2924/00012 , H01L2924/206
摘要： A system and method for providing a post-passivation opening and undercontact metallization is provided. An embodiment comprises an opening through the post-passivation which has a first dimension longer than a second dimension, wherein the first dimension is aligned perpendicular to a chip's direction of coefficient of thermal expansion mismatch. By shaping and aligning the opening through the post-passivation layer in this fashion, the post-passivation layer helps to shield the underlying layers from stresses generated from mismatches of the materials' coefficient of thermal expansion.
摘要翻译： 提供了一种用于提供后钝化开口和未接触金属化的系统和方法。 实施例包括通过后钝化的开口，其具有比第二尺寸长的第一尺寸，其中第一尺寸垂直于芯片的热膨胀失配系数的方向排列。 通过以这种方式通过后钝化层成形和对准开口，后钝化层有助于屏蔽下层，避免由材料的热膨胀系数的错配产生的应力。
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公开(公告)号：US20130087892A1
公开(公告)日：2013-04-11
申请号：US13269310
申请日：2011-10-07
申请人： Ming-Chih Yew , Wen-Yi Lin , Fu-Jen Li , Po-Yao Lin
发明人： Ming-Chih Yew , Wen-Yi Lin , Fu-Jen Li , Po-Yao Lin
CPC分类号： H01L24/06 , H01L23/3157 , H01L23/525 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05008 , H01L2224/05012 , H01L2224/05022 , H01L2224/05541 , H01L2224/05552 , H01L2224/05555 , H01L2224/05569 , H01L2224/05572 , H01L2224/061 , H01L2224/06137 , H01L2224/06179 , H01L2924/00014 , H01L2924/00012 , H01L2924/206
摘要： A system and method for providing a post-passivation opening and undercontact metallization is provided. An embodiment comprises an opening through the post-passivation which has a first dimension longer than a second dimension, wherein the first dimension is aligned perpendicular to a chip's direction of coefficient of thermal expansion mismatch. By shaping and aligning the opening through the post-passivation layer in this fashion, the post-passivation layer helps to shield the underlying layers from stresses generated from mismatches of the materials' coefficient of thermal expansion.
摘要翻译： 提供了一种用于提供后钝化开口和未接触金属化的系统和方法。 实施例包括通过后钝化的开口，其具有比第二尺寸长的第一尺寸，其中第一尺寸垂直于芯片的热膨胀失配系数的方向排列。 通过以这种方式通过后钝化层成形和对准开口，后钝化层有助于屏蔽下层，避免由材料的热膨胀系数的错配产生的应力。
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公开(公告)号：US20120306070A1
公开(公告)日：2012-12-06
申请号：US13152734
申请日：2011-06-03
申请人： Ming-Chih Yew , Fu-Jen Li , Po-Yao Lin , Chia-Jen Cheng , Hsiu-Mei Yu
发明人： Ming-Chih Yew , Fu-Jen Li , Po-Yao Lin , Chia-Jen Cheng , Hsiu-Mei Yu
IPC分类号： H01L23/485
CPC分类号： H01L24/13 , H01L21/76885 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/82 , H01L2224/02235 , H01L2224/02255 , H01L2224/0235 , H01L2224/02375 , H01L2224/0401 , H01L2224/05005 , H01L2224/05008 , H01L2224/05022 , H01L2224/05541 , H01L2224/05569 , H01L2224/05572 , H01L2224/10155 , H01L2224/13005 , H01L2224/13006 , H01L2224/13007 , H01L2224/13024 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2924/00014 , H01L2924/01029 , H01L2924/351 , H01L2924/35121 , H01L2924/207 , H01L2924/2076 , H01L2224/05552
摘要： A system and method for providing a post-passivation and underbump metallization is provided. An embodiment comprises a post-passivation layer that is larger than an overlying underbump metallization. The post-passivation layer extending beyond the underbump metallization shields the underlying layers from stresses generated from mismatches of the materials' coefficient of thermal expansion.
摘要翻译： 提供了一种用于提供后钝化和欠掺杂金属化的系统和方法。 一个实施例包括大于上覆下凸点金属化的后钝化层。 延伸超过下凸块金属化的后钝化层屏蔽下层不受材料的热膨胀系数的不匹配产生的应力。
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公开(公告)号：US08624392B2
公开(公告)日：2014-01-07
申请号：US13152734
申请日：2011-06-03
申请人： Ming-Chih Yew , Fu-Jen Li , Po-Yao Lin , Chia-Jen Cheng , Hsiu-Mei Yu
发明人： Ming-Chih Yew , Fu-Jen Li , Po-Yao Lin , Chia-Jen Cheng , Hsiu-Mei Yu
IPC分类号： H01L23/485
CPC分类号： H01L24/13 , H01L21/76885 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/82 , H01L2224/02235 , H01L2224/02255 , H01L2224/0235 , H01L2224/02375 , H01L2224/0401 , H01L2224/05005 , H01L2224/05008 , H01L2224/05022 , H01L2224/05541 , H01L2224/05569 , H01L2224/05572 , H01L2224/10155 , H01L2224/13005 , H01L2224/13006 , H01L2224/13007 , H01L2224/13024 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2924/00014 , H01L2924/01029 , H01L2924/351 , H01L2924/35121 , H01L2924/207 , H01L2924/2076 , H01L2224/05552
摘要： A system and method for providing a post-passivation and underbump metallization is provided. An embodiment comprises a post-passivation layer that is larger than an overlying underbump metallization. The post-passivation layer extending beyond the underbump metallization shields the underlying layers from stresses generated from mismatches of the materials' coefficient of thermal expansion.
摘要翻译： 提供了一种用于提供后钝化和欠掺杂金属化的系统和方法。 一个实施例包括大于上覆下凸点金属化的后钝化层。 延伸超过下凸块金属化的后钝化层屏蔽下层不受材料的热膨胀系数的不匹配产生的应力。
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