公开(公告)号：US07270759B2

公开(公告)日：2007-09-18

申请号：US11272869

申请日：2005-11-15

申请人： Yukihiro Hayakawa ,  Genzo Momma ,  Masato Kamiichi

发明人： Yukihiro Hayakawa ,  Genzo Momma ,  Masato Kamiichi

IPC分类号： B41J2/16

CPC分类号： B41J2/14129 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  H01L23/481 ,  H01L29/0657 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.

摘要翻译： 通过生产步骤减少和可靠性提高，构造了在硅等的基板中具有通孔的结构。 至少在通孔的边缘附近的基板的一部分上形成与氧化硅膜的上表面接触的氮化硅膜，从而提高氮化硅膜的台阶覆盖。 氧化硅膜和氮化硅膜在从基板的背面进行蚀刻形成通孔期间用作膜。

公开(公告)号：US20060068570A1

公开(公告)日：2006-03-30

申请号：US11272869

申请日：2005-11-15

申请人： Yukihiro Hayakawa ,  Genzo Momma ,  Masato Kamiichi

发明人： Yukihiro Hayakawa ,  Genzo Momma ,  Masato Kamiichi

IPC分类号： H01L21/20

CPC分类号： B41J2/14129 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  H01L23/481 ,  H01L29/0657 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.

公开(公告)号：US06964471B2

公开(公告)日：2005-11-15

申请号：US10270527

申请日：2002-10-16

申请人： Seiichi Tamura ,  Genzo Momma ,  Yukihiro Hayakawa ,  Yoshinori Kawasaki

发明人： Seiichi Tamura ,  Genzo Momma ,  Yukihiro Hayakawa ,  Yoshinori Kawasaki

IPC分类号： B41J2/05 ,  B41J2/14 ,  H01C7/00

CPC分类号： B41J2/14129 ,  B41J2202/03

摘要： To provide a heating resistor film having a sufficiently high durability to repetitive pulse applications, a recording head substrate including the heating resistor film, a recording head, and a recording apparatus. A heating resistor film that generates heat energy using currents flowing from a wire in a heat acting portion of a recording head substrate, is made of amorphous tantalum silicon nitride having a sheet resistance of 200 Ω/□ to 400 Ω/□, and has a thickness of 30 nm to 80 nm.

摘要翻译： 为了提供对重复脉冲应用具有足够高的耐久性的加热电阻膜，包括加热电阻膜，记录头和记录装置的记录头基板。 使用从记录头基板的热作用部分中的线流动的电流产生热能的加热电阻膜由具有200Ω/□至400Ω/□的薄层电阻的非晶态氮化钽氮化硅制成，并且具有 厚度为30nm至80nm。

公开(公告)号：US06799839B2

公开(公告)日：2004-10-05

申请号：US10273336

申请日：2002-10-18

申请人： Yukihiro Hayakawa ,  Genzo Momma

发明人： Yukihiro Hayakawa ,  Genzo Momma

IPC分类号： B41J205

CPC分类号： B41J2/1603 ,  B41J2/1404 ,  B41J2/14129 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2202/13

摘要： A structure having a base plate, such as silicon, provided with a through hole makes it possible to curtail the process numbers at the time of manufacture, while enhancing the reliability thereof. When the through hole is provided by anisotropic etching from the backside of the base plate, a silicon nitride film, which becomes membrane on the surface side of the base plate is formed so as not to allow etching solution from leaking to the surface side of the base plate. It is preferable to form the silicon nitride film using plasma CVD method to make the inner stress of the silicon nitride film a compression stress of 3×108 Pa or less.

摘要翻译： 具有通孔的具有硅的基板的结构使得可以在制造时缩短处理次数，同时提高其可靠性。 当从基板的背面通过各向异性蚀刻提供通孔时，形成在基板的表面侧成为膜的氮化硅膜，以便不使蚀刻溶液泄漏到基板的表面侧 底盘。 优选使用等离子体CVD法形成氮化硅膜，以使氮化硅膜的内应力为3×10 8 Pa以下的压缩应力。

公开(公告)号：US6143190A

公开(公告)日：2000-11-07

申请号：US967732

申请日：1997-11-12

申请人： Takayuki Yagi ,  Junichi Kobayashi ,  Yasushi Kawasumi ,  Genzo Momma ,  Kenji Makino ,  Kei Fujita ,  Yasushi Matsuno ,  Yukihiro Hayakawa ,  Masahiro Takizawa

发明人： Takayuki Yagi ,  Junichi Kobayashi ,  Yasushi Kawasumi ,  Genzo Momma ,  Kenji Makino ,  Kei Fujita ,  Yasushi Matsuno ,  Yukihiro Hayakawa ,  Masahiro Takizawa

IPC分类号： B41J2/05 ,  B41J2/16 ,  B81B3/00 ,  B81C1/00 ,  G01B21/30 ,  G01N37/00 ,  G01Q60/38 ,  G01Q70/16 ,  H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  B44C1/22

CPC分类号： B81C1/00087 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/13 ,  B81B2201/052

摘要： The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.

摘要翻译： 本发明提供一种制造通孔的方法，用于制造通孔的基板，具有通孔的基板以及使用这种通孔的装置或具有这种通孔的基板，其中 其特征在于：只能通过从其背面蚀刻硅衬底来制造通孔; 无论硅晶片厚度和取向平面角度的变化如何，也可以将开口长度d精确地控制到期望值，并且不管所采用的取决于硅晶体取向的各向异性蚀刻剂的类型如何; 可以实现高生产率，高生产重现性和易生产性; 即使长时间在高温下进行温度处理，也可以在开口形状中实现高自由度; 并且可以产生高精度通孔，而不管形成在基板表面上的器件的形状如何。

公开(公告)号：US20120200751A1

公开(公告)日：2012-08-09

申请号：US13365146

申请日：2012-02-02

申请人： Taro Kato ,  Mineo Shimotsusa ,  Hiroaki Sano ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Genzo Momma

发明人： Taro Kato ,  Mineo Shimotsusa ,  Hiroaki Sano ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Genzo Momma

IPC分类号： H04N5/335

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1463

摘要： A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.

摘要翻译： 光电转换装置包括具有光电转换部分的半导体衬底。 绝缘体设置在半导体衬底上。 绝缘体具有与光电转换部对应的孔。 波导构件设置在孔中。 在距离半导体衬底更远的波导构件的一侧设置有层内透镜。 第一中间构件设置在波导构件和内层透镜之间。 第一中间构件具有比层内透镜低的折射率。

公开(公告)号：US5567962A

公开(公告)日：1996-10-22

申请号：US263147

申请日：1994-06-21

申请人： Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Hiroshi Yuzurihara ,  Tetsunobu Kohchi

发明人： Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Hiroshi Yuzurihara ,  Tetsunobu Kohchi

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L27/102 ,  H01L27/108 ,  H01L27/115 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78

CPC分类号： H01L29/7851 ,  H01L21/823475 ,  H01L27/1026 ,  H01L27/10805 ,  H01L27/115 ,  H01L29/66795

摘要： A semiconductor memory device includes: an insulated gate transistor having a plurality of main electrode regions provided along a major surface of a substrate and a channel region provided between the plurality of main electrode regions, and a gate electrode provided on the channel region with a gate insulator therebetween, the gate electrode having at least two opposing portions; and an electrically breakable memory element provided on one of the main electrode regions.

摘要翻译： 一种半导体存储器件，包括：绝缘栅晶体管，具有沿着基板的主表面设置的多个主电极区域和设置在所述多个主电极区域之间的沟道区域;以及栅极电极，设置在所述沟道区域上， 绝缘体之间，所述栅电极具有至少两个相对的部分; 以及设置在所述主电极区域之一上的电可破坏的存储元件。

公开(公告)号：US5612230A

公开(公告)日：1997-03-18

申请号：US417901

申请日：1995-04-06

申请人： Hiroshi Yuzurihara ,  Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Tetsunobu Kochi

发明人： Hiroshi Yuzurihara ,  Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Tetsunobu Kochi

IPC分类号： G11C17/16 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/112 ,  H01L27/12 ,  H01L29/06 ,  H01L29/78 ,  H01L29/786 ,  H01L21/265 ,  H01L21/20

CPC分类号： H01L29/7851 ,  G11C17/16 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/8238 ,  H01L21/823821 ,  H01L29/0653 ,  H01L29/66651 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/78612 ,  H01L29/78639 ,  H01L27/112 ,  H01L27/1211 ,  Y10S257/901

摘要： An insulated gate type transistor includes a plurality of major electrode regions, a channel region provided between the plurality of major electrode regions, a gate electrode provided on the channel region with a gate insulating film therebetween, and a semiconductor region provided in contact with the channel region, the semiconductor region having the same conductivity type as that of the channel region and a higher impurity concentration than the channel region. The gate electrode has at least two opposing portions. The plurality of major electrode regions are provided on an substrate insulating film. The transistor is activated in a state where the semiconductor region is maintained at a predetermined voltage. A semiconductor device includes a plurality of memory cells, each of which includes the aforementioned insulated gate type transistor and an electrically breakable memory element provided on one of the major electrode regions.

摘要翻译： 绝缘栅型晶体管包括多个主电极区域，设置在多个主电极区域之间的沟道区域，设置在沟道区域上的栅极电极之间的栅极绝缘膜，以及设置成与沟道接触的半导体区域 区域，具有与沟道区相同的导电类型和比沟道区更高的杂质浓度的半导体区。 栅电极具有至少两个相对的部分。 多个主电极区域设置在基板绝缘膜上。 晶体管在半导体区域保持在预定电压的状态下被激活。 半导体器件包括多个存储单元，每个存储单元包括上述绝缘栅型晶体管和设置在其中一个主电极区上的电可破坏存储元件。

公开(公告)号：US09000343B2

公开(公告)日：2015-04-07

申请号：US13807002

申请日：2011-06-23

申请人： Takeshi Ichikawa ,  Mineo Shimotsusa ,  Genzo Momma

发明人： Takeshi Ichikawa ,  Mineo Shimotsusa ,  Genzo Momma

IPC分类号： H01L27/146 ,  H01L31/00

CPC分类号： H01L27/14636 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/1469

摘要： The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.

摘要翻译： 固态摄像装置技术领域本发明涉及具有多个光电转换单元的第一基板和具有多个读出电路的第二基板的固体摄像装置。 第一基板设置有彼此电分离的多个第一导电图案，并且第二基板设置有彼此电分离的多个第二导电图案。 第一导电图案各自包括沿第一方向延伸的第一部分图案。 第二导电图案各自包括沿与第一方向不同的第二方向延伸的部分图案。 第一部分图案具有在第一方向上比第二方向上的长度长的长度。

公开(公告)号：US20120199725A1

公开(公告)日：2012-08-09

申请号：US13364041

申请日：2012-02-01

申请人： Mineo Shimotsusa ,  Taro Kato ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Takeshi Ichikawa ,  Genzo Momma

发明人： Mineo Shimotsusa ,  Taro Kato ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Takeshi Ichikawa ,  Genzo Momma

IPC分类号： H01L27/146 ,  G01J1/42

CPC分类号： H01L27/14629 ,  H01L27/14627

摘要： A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending from the opening portion, and the light path member having a lower face in a region corresponding to a light receiving face of an photoelectric conversion portion.

摘要翻译： 聚光部件将布置在开口部内的光路部件的上部区域中入射到聚光部件的与绝缘膜的开口部对应的第一区域的光聚焦，该绝缘膜具有 上表面从开口部分延伸，并且光路部件在与光电转换部分的光接收面对应的区域中具有下表面。