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公开(公告)号：US20130026624A1
公开(公告)日：2013-01-31
申请号：US13194616
申请日：2011-07-29
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/02126 , H01L2224/02166 , H01L2224/03462 , H01L2224/03464 , H01L2224/03616 , H01L2224/03848 , H01L2224/03912 , H01L2224/0401 , H01L2224/05082 , H01L2224/05083 , H01L2224/05096 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05187 , H01L2224/05582 , H01L2224/05583 , H01L2224/05644 , H01L2224/05647 , H01L2224/1132 , H01L2224/11334 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/1148 , H01L2224/11849 , H01L2224/119 , H01L2224/13111 , H01L2924/01322 , H01L2924/12042 , H01L2924/351 , H01L2924/3511 , H01L2924/3512 , H01L2924/00014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01082 , H01L2924/01047 , H01L2924/01083 , H01L2224/11912 , H01L2924/05042 , H01L2924/05442 , H01L2924/00
摘要： A solder bump support structure and method of manufacturing thereof is provided. The solder bump support structure includes an inter-level dielectric (ILD) layer formed over a silicon substrate. The ILD layer has a plurality of conductive vias. The structure further includes a first insulation layer formed on the ILD layer. The solder bump support structure further includes a pedestal member formed on the ILD layer which includes a conductive material formed above the plurality of conductive vias in the ILD layer coaxially surrounded by a second insulation layer. The second insulation layer is thicker than the first insulation layer. The structure further includes a capping under bump metal (UBM) layer formed over, and in electrical contact with, the conductive material and formed over at least a portion of the second insulation layer of the pedestal member.
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公开(公告)号：US08563416B2
公开(公告)日：2013-10-22
申请号：US13194616
申请日：2011-07-29
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/02126 , H01L2224/02166 , H01L2224/03462 , H01L2224/03464 , H01L2224/03616 , H01L2224/03848 , H01L2224/03912 , H01L2224/0401 , H01L2224/05082 , H01L2224/05083 , H01L2224/05096 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05187 , H01L2224/05582 , H01L2224/05583 , H01L2224/05644 , H01L2224/05647 , H01L2224/1132 , H01L2224/11334 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/1148 , H01L2224/11849 , H01L2224/119 , H01L2224/13111 , H01L2924/01322 , H01L2924/12042 , H01L2924/351 , H01L2924/3511 , H01L2924/3512 , H01L2924/00014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01082 , H01L2924/01047 , H01L2924/01083 , H01L2224/11912 , H01L2924/05042 , H01L2924/05442 , H01L2924/00
摘要： A solder bump support structure and method of manufacturing thereof is provided. The solder bump support structure includes an inter-level dielectric (ILD) layer formed over a silicon substrate. The ILD layer has a plurality of conductive vias. The structure further includes a first insulation layer formed on the ILD layer. The solder bump support structure further includes a pedestal member formed on the ILD layer which includes a conductive material formed above the plurality of conductive vias in the ILD layer coaxially surrounded by a second insulation layer. The second insulation layer is thicker than the first insulation layer. The structure further includes a capping under bump metal (UBM) layer formed over, and in electrical contact with, the conductive material and formed over at least a portion of the second insulation layer of the pedestal member.
摘要翻译： 提供焊料凸块支撑结构及其制造方法。 焊料凸块支撑结构包括在硅衬底上形成的级间电介质（ILD）层。 ILD层具有多个导电通孔。 该结构还包括形成在ILD层上的第一绝缘层。 焊料凸块支撑结构还包括形成在ILD层上的基座构件，其包括形成在由第二绝缘层同轴围绕的ILD层中的多个导电通孔上方的导电材料。 第二绝缘层比第一绝缘层厚。 该结构还包括形成在导电材料之上并与导电材料电接触并且形成在基座构件的第二绝缘层的至少一部分上的封盖凸块下金属（UBM）层。
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