公开(公告)号：US20120064686A1

公开(公告)日：2012-03-15

申请号：US12880959

申请日：2010-09-13

申请人： David Gerald Farber ,  Tom Lii

发明人： David Gerald Farber ,  Tom Lii

IPC分类号： H01L21/336 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： A method of etching recesses into silicon prior to formation of embedded silicon alloy source/drain regions. The recess etch includes a plasma etch component, using an etch chemistry of a primary fluorine-based or chlorine-based etchant, in combination with a similar concentration of hydrogen bromide. The concentration of both the primary etchant and the hydrogen bromide is relatively low; a diluent of an inert gas or oxygen is added to the reactive species. Loading effects on the undercut of the recess etch are greatly reduced, resulting in reduced transistor performance variation.

摘要翻译： 在形成嵌入的硅合金源极/漏极区之前，将凹陷蚀刻成硅的方法。 凹陷蚀刻包括等离子体蚀刻部件，其使用初级氟基或氯基蚀刻剂的蚀刻化学，与类似浓度的溴化氢组合。 初级蚀刻剂和溴化氢的浓度相对较低; 向反应性物质中加入惰性气体或氧气的稀释剂。 对凹槽蚀刻的底切的加载效应大大降低，导致晶体管性能的变化降低。

公开(公告)号：US20090042399A1

公开(公告)日：2009-02-12

申请号：US11835806

申请日：2007-08-08

申请人： Brian Ashley Smith ,  David Gerald Farber

发明人： Brian Ashley Smith ,  David Gerald Farber

IPC分类号： H01L21/461

CPC分类号： H01L21/76802 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31144

摘要： A method of forming a feature on a multi-layer semiconductor is disclosed. A pattern feature is formed in an uppermost layer of the multi-layer semiconductor. The multilayer semiconductor is etched with a SO2 based chemistry to extend the pattern feature to a lower layer of the multi-layer semiconductor. Use of the SO2 based chemistry for etch eliminates features roughness associated with conventional CO, SiCL4 or CO2-based chemistries.

摘要翻译： 公开了一种在多层半导体上形成特征的方法。 在多层半导体的最上层形成图案特征。 多层半导体用SO2基化学蚀刻以将图案特征扩展到多层半导体的下层。 使用基于SO2的化学品进行蚀刻可消除与常规CO，SiCl4或基于CO2的化学物质相关的特征粗糙度。

公开(公告)号：US08507386B2

公开(公告)日：2013-08-13

申请号：US12880959

申请日：2010-09-13

申请人： David Gerald Farber ,  Tom Lii

发明人： David Gerald Farber ,  Tom Lii

IPC分类号： H01L21/302

CPC分类号： H01L21/3065 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： A method of etching recesses into silicon prior to formation of embedded silicon alloy source/drain regions. The recess etch includes a plasma etch component, using an etch chemistry of a primary fluorine-based or chlorine-based etchant, in combination with a similar concentration of hydrogen bromide. The concentration of both the primary etchant and the hydrogen bromide is relatively low; a diluent of an inert gas or oxygen is added to the reactive species. Loading effects on the undercut of the recess etch are greatly reduced, resulting in reduced transistor performance variation.

摘要翻译： 在形成嵌入的硅合金源极/漏极区之前，将凹陷蚀刻成硅的方法。 凹陷蚀刻包括等离子体蚀刻部件，其使用初级氟基或氯基蚀刻剂的蚀刻化学，与类似浓度的溴化氢组合。 初级蚀刻剂和溴化氢的浓度相对较低; 向反应性物质中加入惰性气体或氧气的稀释剂。 对凹槽蚀刻的底切的加载效应大大降低，导致晶体管性能的变化降低。

公开(公告)号：US20080268589A1

公开(公告)日：2008-10-30

申请号：US11742254

申请日：2007-04-30

申请人： David Gerald Farber ,  Toan Tran ,  Craig Henry Huffman ,  Brian K. Kirkpatrick

发明人： David Gerald Farber ,  Toan Tran ,  Craig Henry Huffman ,  Brian K. Kirkpatrick

IPC分类号： H01L21/8238 ,  H01L29/76

CPC分类号： H01L21/76232 ,  H01L21/823481

摘要： The disclosure provides a method of manufacturing a semiconductor device. The method comprises forming a shallow trench isolation structure, including performing a wet etch process to remove a patterned pad oxide layer located on a semiconductor substrate. The wet etch thereby produces a divot on upper lateral edges of a insulator-filled trench in the semiconductor substrate. Forming the shallow trench isolation structure also includes forming a nitride post on a vertical wall of the divot. Forming the nitride post includes depositing a nitride layer on the insulator, and dry etching the nitride layer. The dry etch is selective towards the nitride located adjacent the vertical wall such that a portion of the nitride layer remains on the vertical wall subsequent to the dry etching.

摘要翻译： 本公开提供了制造半导体器件的方法。 该方法包括形成浅沟槽隔离结构，包括执行湿蚀刻工艺以去除位于半导体衬底上的图案化衬垫氧化物层。 因此，湿蚀刻在半导体衬底中的绝缘体填充沟槽的上侧边缘上产生凹陷。 形成浅沟槽隔离结构还包括在该凹陷的垂直壁上形成氮化物柱。 形成氮化物柱包括在绝缘体上沉积氮化物层，并干蚀刻氮化物层。 干蚀刻对位于垂直壁附近的氮化物是选择性的，使得在干蚀刻之后，氮化物层的一部分保留在垂直壁上。

公开(公告)号：US07087518B2

公开(公告)日：2006-08-08

申请号：US10438566

申请日：2003-05-15

申请人： David Gerald Farber ,  William Wesley Dostalik ,  Robert Kraft ,  Andrew J. McKerrow ,  Kenneth Joseph Newton ,  Ting Tsui

发明人： David Gerald Farber ,  William Wesley Dostalik ,  Robert Kraft ,  Andrew J. McKerrow ,  Kenneth Joseph Newton ,  Ting Tsui

IPC分类号： H01L21/322

CPC分类号： H01L21/76829 ,  H01L21/306 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/76801

摘要： One aspect of the invention relates to a method of removing contaminants from a low-k film. The method involves forming a sacrificial layer over the contaminated film. The contaminants combine with the sacrificial layer and are removed by etching away the sacrificial layer. An effective material for the sacrificial layer is, for example, a silicon carbide. The method can be used to prevent the occurrence of pattern defects in chemically amplified photoresists formed over low-k films.

公开(公告)号：US06232134B1

公开(公告)日：2001-05-15

申请号：US09490125

申请日：2000-01-24

申请人： David Gerald Farber ,  Wei E. Wu ,  Phillip E. Crabtree

发明人： David Gerald Farber ,  Wei E. Wu ,  Phillip E. Crabtree

IPC分类号： H01L2100

CPC分类号： H01L22/20

摘要： A method and apparatus for characterizing processing operations is presented. Following exposure of a wafer to plasma, the surface charge distribution pattern on the wafer is measured. The surface charge distribution pattern on the wafer is then compared with known surface charge distribution patterns to determine if the measured charge distribution pattern correlates to desirable patterns associated with successful performance of one or more processing steps. In some embodiments, the comparison of the measured charge distribution pattern can be used to detect specific problems in one or more processing steps such that corrective action can be taken in a timely manner. The comparison between the measured charge distribution pattern and known charge distribution patterns may be performed using image comparison or using quantitative comparisons based on charge levels measured within each pattern.

摘要翻译： 提出了一种用于表征处理操作的方法和装置。 在将晶片暴露于等离子体之后，测量晶片上的表面电荷分布图案。 然后将晶片上的表面电荷分布图案与已知的表面电荷分布图案进行比较，以确定测量的电荷分布模式是否与一个或多个处理步骤的成功执行相关联的期望模式相关。 在一些实施例中，所测量的电荷分布模式的比较可用于检测一个或多个处理步骤中的特定问题，从而能够及时地进行校正动作。 可以使用图像比较或使用基于每个图案中测量的电荷水平的定量比较来执行所测量的电荷分布图案与已知电荷分布图案之间的比较。

公开(公告)号：US4071151A

公开(公告)日：1978-01-31

申请号：US744474

申请日：1976-11-24

申请人： Gerald Farber

发明人： Gerald Farber

IPC分类号： B01J3/02 ,  C10J3/30 ,  H02K33/00

CPC分类号： H02K33/00 ,  B01J3/02 ,  C10J3/30 ,  C10J3/723 ,  C10J3/78 ,  C10J2200/158 ,  C10J2300/093

摘要： Apparatus and method for feeding powdered coal from a helical ramp into a high pressure, heated, reactor tube containing hydrogen for hydrogenating the coal and/or for producing useful products from coal. To this end, the helical ramp is vibrated to feed the coal cleanly at an accurately controlled rate in a simple reliable and trouble-free manner that eliminates complicated and expensive screw feeders, and/or complicated and expensive seals, bearings and fully rotating parts.

摘要翻译： 将来自螺旋斜坡的粉煤进料到含有氢气的高压，加热的反应器管中，用于使煤气化和/或从煤产生有用的产物的装置和方法。 为此，螺旋斜坡被振动以以简单可靠和无故障的方式以精确控制的速率干净地供给煤，消除了复杂和昂贵的螺旋进料器和/或复杂且昂贵的密封件，轴承和完全旋转的部件。

公开(公告)号：US4250015A

公开(公告)日：1981-02-10

申请号：US970841

申请日：1978-12-18

申请人： Ralph T. Yang ,  Robert Smol ,  Gerald Farber ,  Leonard M. Naphtali

发明人： Ralph T. Yang ,  Robert Smol ,  Gerald Farber ,  Leonard M. Naphtali

IPC分类号： C10G1/08 ,  C10B1/06 ,  C10B21/00 ,  C10B53/08

CPC分类号： C10G1/083

摘要： Hydrogenation of coal is improved through the use of a mechanical force to reduce the size of the particulate coal simultaneously with the introduction of gaseous hydrogen, or other hydrogen donor composition. Such hydrogen in the presence of elemental tin during this one-step size reduction-hydrogenation further improves the yield of the liquid hydrocarbon product.

摘要翻译： 通过使用机械力，通过引入气态氢或其它氢供体组合物同时减小颗粒状煤的尺寸，煤的氢化得到改善。 在一步尺寸还原氢化期间，元素锡存在下的这种氢气进一步提高了液态烃产物的产率。