公开(公告)号：US20100102351A1

公开(公告)日：2010-04-29

申请号：US12646150

申请日：2009-12-23

申请人： Chang Tae Kim ,  Tae Hee Lee ,  Hyun Min Jung ,  Gi Yeon Nam

发明人： Chang Tae Kim ,  Tae Hee Lee ,  Hyun Min Jung ,  Gi Yeon Nam

IPC分类号： H01L33/00 ,  H01L21/302

CPC分类号： H01L33/22 ,  H01L33/007

摘要： The present disclosure relates to a semiconductor light-emitting device and a method of manufacturing the same, and more particularly, to a III-nitride semiconductor light-emitting device which improves external quantum efficiency by forming an irregular portion on a surface of a semiconductor layer by a protrusion formed on a substrate, and a method of manufacturing the same.

摘要翻译： 本发明涉及一种半导体发光器件及其制造方法，更具体地说，涉及通过在半导体层的表面上形成不规则部分来提高外部量子效率的III族氮化物半导体发光器件 通过形成在基板上的突起及其制造方法。

公开(公告)号：US20090166662A1

公开(公告)日：2009-07-02

申请号：US12195674

申请日：2008-08-21

申请人： Chang Tae Kim ,  Gi Yeon Nam

发明人： Chang Tae Kim ,  Gi Yeon Nam

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a III-nitride semiconductor light emitting device comprising: a plurality of III-nitride semiconductor layers with an active layer generating light by recombination of holes and electrons; and a branch electrode provided with an arm extended from the p-side bonding pad toward the n-side electrode and two fingers branched off toward the n-side electrode from the arm.

摘要翻译： 本发明涉及一种III族氮化物半导体发光器件，包括：多个III族氮化物半导体层，其具有通过空穴和电子的复合产生光的有源层; 以及分支电极，其具有从p侧接合焊盘朝向n侧电极延伸的臂，并且两个指状物从臂向n侧电极分支。

公开(公告)号：US20080315240A1

公开(公告)日：2008-12-25

申请号：US12196066

申请日：2008-08-21

申请人： Chang Tae Kim ,  Hyun-Min Jung ,  Tae Hee Lee ,  Byeong Kyun Choi ,  Hyun Suk Kim ,  Gi Yeon Nam

发明人： Chang Tae Kim ,  Hyun-Min Jung ,  Tae Hee Lee ,  Byeong Kyun Choi ,  Hyun Suk Kim ,  Gi Yeon Nam

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/46

摘要： The present disclosure relates to an III-nitride semiconductor light emitting device, particularly, an electrode structure thereof. The III-nitride semiconductor light emitting device includes a substrate, a plurality of III-nitride semiconductor layers grown on the substrate, and composed of a first III-nitride semiconductor layer with first conductivity, a second III-nitride semiconductor layer with second conductivity different from the first conductivity, and an active layer positioned between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer, for generating light by recombination of electrons and holes, and a hole passing through the substrate and the plurality of III-nitride semiconductor layers.

摘要翻译： 本公开涉及III族氮化物半导体发光器件，特别是其电极结构。 III族氮化物半导体发光器件包括衬底，在衬底上生长的多个III族氮化物半导体层，由具有第一导电性的第一III族氮化物半导体层，具有第二导电性的第二III族氮化物半导体层组成 以及位于第一III族氮化物半导体层和第二III族氮化物半导体层之间的有源层，用于通过电子和空穴的复合产生光，以及穿过衬底的多个III- 氮化物半导体层。

公开(公告)号：US07795610B2

公开(公告)日：2010-09-14

申请号：US12195741

申请日：2008-08-21

申请人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

发明人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

IPC分类号： H01L29/06 ,  H01L29/12

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.

摘要翻译： 本公开涉及通过电子和空穴的复合产生光的半导体发光器件，其包括：用于提供电子和空穴中的一个的第一指状电极，提供另一个电子和空穴的第二指状电极， 并且以第一间隔与第一指状电极间隔开; 以及电连接到第一指状电极的第三指状电极，并且以比第一间隔小的第二间隔与第二指状电极间隔开。

公开(公告)号：US20090020771A1

公开(公告)日：2009-01-22

申请号：US12196000

申请日：2008-08-21

申请人： Chang-Tae Kim ,  Hyun-Min Jung ,  Eui-Gue Jeon ,  Hyun-Suk Kim ,  Gi-Yeon Nam ,  Byeong-Kyun Choi

发明人： Chang-Tae Kim ,  Hyun-Min Jung ,  Eui-Gue Jeon ,  Hyun-Suk Kim ,  Gi-Yeon Nam ,  Byeong-Kyun Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382

摘要： The present disclosure relates to an III-nitride compound semiconductor light emitting device and a method of manufacturing the same. The III-nitride compound semiconductor light emitting device includes a substrate with a groove formed therein, a plurality of nitride compound semiconductor layers being grown on the substrate, and including an active layer for generating light by recombination of electron and hole, and an opening formed on the groove along the plurality of nitride compound semiconductor layers.

摘要翻译： 本公开涉及III族氮化物化合物半导体发光器件及其制造方法。 III族氮化物化合物半导体发光器件包括其中形成有沟槽的衬底，在衬底上生长多个氮化物化合物半导体层，并且包括通过电子和空穴的复合产生光的有源层和形成的开口 沿着多个氮化物化合物半导体层的凹槽。

公开(公告)号：US20090283789A1

公开(公告)日：2009-11-19

申请号：US12195741

申请日：2008-08-21

申请人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

发明人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.

摘要翻译： 本公开涉及通过电子和空穴的复合产生光的半导体发光器件，其包括：用于提供电子和空穴中的一个的第一指状电极，提供另一个电子和空穴的第二指状电极， 并且以第一间隔与第一指状电极间隔开; 以及电连接到第一指状电极的第三指状电极，并且以比第一间隔小的第二间隔与第二指状电极间隔开。

公开(公告)号：US20110233603A1

公开(公告)日：2011-09-29

申请号：US13132854

申请日：2009-12-04

申请人： Chang-Tae Kim ,  Gi Yeon Nam

发明人： Chang-Tae Kim ,  Gi Yeon Nam

IPC分类号： H01L33/62

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light-emitting device including: a plurality of semiconductor layers having a first semiconductor layer with a first conductivity, a second semiconductor layer with a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of semiconductor layers; a first electrode spread over the plurality of semiconductor layers; and a second electrode extended from the bonding pad to the first electrode and electrically connecting the bonding pad to the first electrode.

摘要翻译： 本公开涉及一种半导体发光器件，其包括：具有第一导电性的第一半导体层的多个半导体层，具有不同于第一导电性的第二导电性的第二半导体层，以及插入在第一导电层之间的有源层 半导体层和第二半导体层，并且通过电子和空穴的复合产生光; 电连接到所述多个半导体层的接合焊盘; 第一电极，分布在多个半导体层上; 以及从所述接合焊盘延伸到所述第一电极并将所述焊盘电连接到所述第一电极的第二电极。

公开(公告)号：US20110001158A1

公开(公告)日：2011-01-06

申请号：US12865721

申请日：2008-09-19

申请人： Chang Tae Kim ,  Tae Hee Lee ,  Gi Yeon Nam

发明人： Chang Tae Kim ,  Tae Hee Lee ,  Gi Yeon Nam

IPC分类号： H01L33/32

CPC分类号： H01L33/12 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/22

摘要： The present disclosure relates to a Ill-nitride semiconductor light emitting device, comprising: a substrate with a plurality of protrusions formed thereon, each of the plurality of protrusions having three acute portions and three obtuse portions; and a plurality of Ill-nitride semiconductor layers formed over the substrate and including an active layer for generating light by recombination of electrons and holes.

摘要翻译： 本发明涉及一种III族氮化物半导体发光器件，包括：具有形成在其上的多个突起的衬底，所述多个突起中的每一个具有三个尖锐部分和三个钝角部分; 以及形成在所述基板上并且包括通过电子和空穴的复合产生光的有源层的多个III族氮化物半导体层。

公开(公告)号：US20100140656A1

公开(公告)日：2010-06-10

申请号：US12647860

申请日：2009-12-28

申请人： Chang Tae Kim ,  Gi Yeon NAM ,  Tae Hee LEE

发明人： Chang Tae Kim ,  Gi Yeon NAM ,  Tae Hee LEE

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light-emitting device generating light by recombination of electrons and holes. The semiconductor light-emitting device includes: a first bonding electrode and a second bonding electrode supplying the current for the recombination of the electrons and holes; a first branch electrode and a second branch electrode extended from the first bonding electrode; and a third branch electrode extended from the second bonding electrode, located between the first branch electrode and the second branch electrode, and having a first interval from the first branch electrode and a second interval smaller than the first interval from the second branch electrode. The second branch electrode is located farther from the center of the light-emitting device than the first branch electrode, and the second branch electrode is located farther from the center of the light-emitting device than the third branch electrode.

摘要翻译： 本公开涉及通过电子和空穴的复合产生光的半导体发光器件。 半导体发光器件包括：第一接合电极和提供用于电子和空穴的复合的电流的第二接合电极; 从所述第一接合电极延伸的第一分支电极和第二分支电极; 以及第三分支电极，其从所述第二接合电极延伸，位于所述第一分支电极和所述第二分支电极之间，并且具有从所述第一分支电极起的第一间隔，以及距所述第二分支电极小于所述第一间隔的第二间隔。 第二分支电极位于比第一分支电极更远离发光器件的中心，并且第二分支电极位于比第三分支电极更远离发光器件的中心的位置。