公开(公告)号：US20130037848A1

公开(公告)日：2013-02-14

申请号：US13627617

申请日：2012-09-26

申请人： Woo Sik LIM ,  Sung Ho Choo ,  Byeong Kyun Choi

发明人： Woo Sik LIM ,  Sung Ho Choo ,  Byeong Kyun Choi

IPC分类号： H01L33/62

CPC分类号： H01L33/382 ,  H01L33/0008 ,  H01L33/36 ,  H01L33/38 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode disposed in an opening portion of the light emitting structure and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, a second electrode disposed on the insulating layer and connected to the second conductive type semiconductor layer, a first electrode layer under the second electrode.

摘要翻译： 公开了一种发光器件和具有该发光器件的发光器件封装。 发光器件包括发光结构，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，第一电极，设置在发光结构的开口部分中并与第一导电类型半导体层 导电型半导体层，覆盖第一电极的绝缘层，设置在绝缘层上并连接到第二导电类型半导体层的第二电极，在第二电极下面的第一电极层。

公开(公告)号：US20140332839A1

公开(公告)日：2014-11-13

申请号：US14267358

申请日：2014-05-01

申请人： Byeong Kyun CHOI ,  Jae Won SEO ,  Sung Ho CHOO

发明人： Byeong Kyun CHOI ,  Jae Won SEO ,  Sung Ho CHOO

IPC分类号： H01L33/38

CPC分类号： H01L33/387 ,  H01L24/14 ,  H01L24/17 ,  H01L33/486 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16245 ,  H01L2924/12041 ,  H01L2924/00

摘要： A light emitting device package includes a body having a cavity therein and first and second recesses inside the cavity of the body. The first and second electrode layers are provided in the first and second recesses, and a light emitting device is provided on the first and second electrode layers. The first and second bumps are provided under the light emitting device and attached to the first and second recesses.

摘要翻译： 发光器件封装包括其中具有空腔的主体和位于主体的空腔内的第一和第二凹部。 第一和第二电极层设置在第一和第二凹部中，并且发光器件设置在第一和第二电极层上。 第一和第二凸块设置在发光器件的下面并附接到第一和第二凹部。

公开(公告)号：US08884328B2

公开(公告)日：2014-11-11

申请号：US13031788

申请日：2011-02-22

申请人： Woo Sik Lim ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

发明人： Woo Sik Lim ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

IPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/08

CPC分类号： H01L33/24 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Provided is a light emitting device. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer, a current spreading layer on the second conductive type semiconductor layer, an insulation layer on the first electrode, and a second electrode comprising at least one bridge portion on the insulation layer and a first contact portion contacting at least one of the second conductive type semiconductor layer and the current spreading layer.

摘要翻译： 提供了一种发光装置。 发光器件包括发光结构层，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，连接到第一导电类型半导体层的第一电极，第二导电类型的电流扩散层 第一电极上的绝缘层，以及包括绝缘层上的至少一个桥接部分的第二电极和与第二导电类型半导体层和电流扩展层中的至少一个接触的第一接触部分。

公开(公告)号：US08558216B2

公开(公告)日：2013-10-15

申请号：US12971721

申请日：2010-12-17

申请人： Byeong-Kyun Choi ,  Jae-Heun Lee

发明人： Byeong-Kyun Choi ,  Jae-Heun Lee

IPC分类号： H01L29/06

CPC分类号： H01L33/20 ,  H01L33/0095 ,  H01L33/32

摘要： Discussed are a nitride semiconductor light emitting device in which a critical angle is increased by rounding corners of a substrate so as to improve light extraction efficiency due to increase in an amount of light generated from the inside thereof and extracted to the outside, and a method for manufacturing the same. The nitride semiconductor light emitting device includes according to an embodiment a buffer layer formed on a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, formed on the buffer layer, a first electrode formed on the first conductive semiconductor layer, and a second electrode formed on the second conductive semiconductor layer, wherein the substrate has a light transmitting property, and respective corners of the substrate are rounded so as to have a designated curvature.

摘要翻译： 讨论了一种氮化物半导体发光器件，其中临界角通过使基底的四舍五入而增加，以便由于从其内部产生的光量的增加并提取到外部来提高光提取效率，并且提供了一种方法 制造相同。 氮化物半导体发光器件包括根据实施例的形成在衬底上的缓冲层，形成在缓冲层上的第一导电半导体层，有源层和第二导电半导体层的发光结构，形成的第一电极 在所述第一导电半导体层上形成的第二电极和形成在所述第二导电半导体层上的第二电极，其中，所述基板具有透光性，并且所述基板的各个角部为圆形，以具有指定的曲率。

公开(公告)号：US08283692B2

公开(公告)日：2012-10-09

申请号：US12783638

申请日：2010-05-20

申请人： Woo Sik Lim ,  Sung Ho Choo ,  Byeong Kyun Choi

发明人： Woo Sik Lim ,  Sung Ho Choo ,  Byeong Kyun Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/0008 ,  H01L33/36 ,  H01L33/38 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure that includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first electrode including at least one arm shape and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, and a second electrode including on at least one arm shape, wherein the second electrode disposes on at least one of the insulating layer and the second conductive type semiconductor layer.

摘要翻译： 公开了一种发光器件和具有该发光器件的发光器件封装。 发光器件包括发光结构，其包括第一导电类型半导体层，第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层，第一电极，其包括至少一个臂形状 并且与第一导电类型半导体层的一部分，覆盖第一电极的绝缘层和包括至少一个臂形状的第二电极接触，其中第二电极配置在绝缘层和第二导电性中的至少一个上 型半导体层。

公开(公告)号：US07795610B2

公开(公告)日：2010-09-14

申请号：US12195741

申请日：2008-08-21

申请人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

发明人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

IPC分类号： H01L29/06 ,  H01L29/12

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.

摘要翻译： 本公开涉及通过电子和空穴的复合产生光的半导体发光器件，其包括：用于提供电子和空穴中的一个的第一指状电极，提供另一个电子和空穴的第二指状电极， 并且以第一间隔与第一指状电极间隔开; 以及电连接到第一指状电极的第三指状电极，并且以比第一间隔小的第二间隔与第二指状电极间隔开。

公开(公告)号：US20090020771A1

公开(公告)日：2009-01-22

申请号：US12196000

申请日：2008-08-21

申请人： Chang-Tae Kim ,  Hyun-Min Jung ,  Eui-Gue Jeon ,  Hyun-Suk Kim ,  Gi-Yeon Nam ,  Byeong-Kyun Choi

发明人： Chang-Tae Kim ,  Hyun-Min Jung ,  Eui-Gue Jeon ,  Hyun-Suk Kim ,  Gi-Yeon Nam ,  Byeong-Kyun Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382

摘要： The present disclosure relates to an III-nitride compound semiconductor light emitting device and a method of manufacturing the same. The III-nitride compound semiconductor light emitting device includes a substrate with a groove formed therein, a plurality of nitride compound semiconductor layers being grown on the substrate, and including an active layer for generating light by recombination of electron and hole, and an opening formed on the groove along the plurality of nitride compound semiconductor layers.

摘要翻译： 本公开涉及III族氮化物化合物半导体发光器件及其制造方法。 III族氮化物化合物半导体发光器件包括其中形成有沟槽的衬底，在衬底上生长多个氮化物化合物半导体层，并且包括通过电子和空穴的复合产生光的有源层和形成的开口 沿着多个氮化物化合物半导体层的凹槽。

公开(公告)号：US08053805B2

公开(公告)日：2011-11-08

申请号：US12964454

申请日：2010-12-09

申请人： Woo Sik Lim ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

发明人： Woo Sik Lim ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

IPC分类号： H01L33/38

CPC分类号： H01L33/38 ,  H01L24/05 ,  H01L33/387 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and an electrode comprising a pad part and a finger part on the light emitting structure layer. The pad part comprises a pattern in which at least one opening is defined, and the finger part comprises a pattern electrically connected to the pad part and linearly extending from the pad part.

摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括发光结构层，其包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，以及包括衬垫 部分和手指部分在发光结构层上。 垫部分包括其中限定了至少一个开口的图案，并且指部分包括电连接到垫部分并且从垫部分线性延伸的图案。

公开(公告)号：US20090283789A1

公开(公告)日：2009-11-19

申请号：US12195741

申请日：2008-08-21

申请人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

发明人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.

摘要翻译： 本公开涉及通过电子和空穴的复合产生光的半导体发光器件，其包括：用于提供电子和空穴中的一个的第一指状电极，提供另一个电子和空穴的第二指状电极， 并且以第一间隔与第一指状电极间隔开; 以及电连接到第一指状电极的第三指状电极，并且以比第一间隔小的第二间隔与第二指状电极间隔开。

公开(公告)号：US08912028B2

公开(公告)日：2014-12-16

申请号：US13330315

申请日：2011-12-19

申请人： Taeil Jung ,  YoungChae Kim ,  SunMan Kim ,  Yeji Han ,  Chunghoon Park ,  Byeong-Kyun Choi ,  Se-Eun Kang

发明人： Taeil Jung ,  YoungChae Kim ,  SunMan Kim ,  Yeji Han ,  Chunghoon Park ,  Byeong-Kyun Choi ,  Se-Eun Kang

IPC分类号： H01L33/42 ,  H01L33/20

CPC分类号： H01L33/42 ,  H01L33/20

摘要： A semiconductor light emitting device, which includes a light transmissive electrode layer formed using a conductive thin film and an insulating thin film to substitute for a transparent electrode layer, comprises a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; a light transmissive electrode layer formed on the second semiconductor layer, the light transmissive electrode layer having a structure in which at least one conductive thin film and at least one insulating thin film are deposited; and a first electrode formed on the light transmissive electrode layer, wherein the light transmissve electrode layer includes at least one contact portion for contacting the at least one conductive thin film with the first electrode.

摘要翻译： 包括使用导电薄膜形成的透光电极层和用于代替透明电极层的绝缘薄膜的半导体发光器件包括衬底; 形成在所述基板上的第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 形成在所述第二半导体层上的透光电极层，所述透光电极层具有其中沉积至少一个导电薄膜和至少一个绝缘薄膜的结构; 以及形成在所述透光电极层上的第一电极，其中所述透光电极层包括用于使所述至少一个导电薄膜与所述第一电极接触的至少一个接触部分。