摘要:
A method for extending the gas lifetime of an excimer laser by removing CF.sub.4 impurity, which comprises:a) reacting CF.sub.4, an undesirable impurity which forms and is contained in the lasing gases, with an amount of an oxidizing gas additive effective to produce one or more compounds which are condensible with refrigeration means, without reducing laser output below a predetermined acceptable level; andb) condensing said one or more compounds produced in step a) with refrigeration means, substantially without condensing said one or more rare gases therewith, thereby removing said CF.sub.4 impurity from said excimer laser and extending the gas lifetime of the laser.
摘要:
Integral blocks, chemical delivery systems and methods for delivering an ultrapure chemical to a point of use or to another integral block are provided. More particularly, the integral blocks include a recharge container block, a pressurization gas block, a purge gas block, a waste recovery block, a vacuum block, a solvent supply block, a degas block, a control block, and a filtration block. Various integral blocks may be selected to form a chemical delivery system, which is particularly suited for a given application. A chemical delivery system will typically comprise a chemical container block, a chemical delivery block, and a point of use in line with the chemical container block and chemical delivery block, as well as one or more integral blocks. The invention also relates to a method for delivering an ultrapure chemical from a chemical container to a point of use, by connecting a chemical container block, containing an ultrapure chemical, to a chemical delivery block and introducing the ultrapure chemical to a point of use. The methods may also include the use of one or more integral blocks. The chemical delivery systems and methods of the invention may be used in a variety of applications. In particular, the invention may be used in electronics fabrication, optical fiber manufacture or semiconductor manufacture.
摘要:
Methods of film deposition using metals and metal oxides. A thin film of germanium oxide and an oxide of a non-germanium metal is deposited by ALD by alternating deposition of first and second precursor compounds, wherein the first precursor compound includes a metal other than germanium, and the second precursor compound includes germanium.
摘要:
Methods and apparatus for delivery of high purity reactive liquids using gaseous assist are described, the apparatus comprising a container body, the container body having fluidly connected thereto a gas inlet and a reactive liquid outlet, the gas inlet fitted with a means adapted to hold a gas filter media, and a gas filter media positioned within said means adapted to hold a gas filter media, the gas inlet having a gas inlet valve, the liquid outlet having a liquid outlet valve.
摘要:
Processes are disclosed for increasing the condensed phase production of BCl3 comprising less than about 10 ppm phosgene, less than 10 ppm chlorine, and less than 10 ppm HCl. In one embodiment the process comprises injecting an inert gas into a container having condensed BCl3 therein, the condensed BCl3 having therein a minor portion of phosgene impurity. A major portion of the phosgene in the condensed BCl3 is decomposed to carbon monoxide and chlorine by increasing temperature to produce a phosgene deficient stream. The temperature of the phosgene deficient stream is then decreased, and contacted with an adsorbent to remove the chlorine in the stream by adsorption to form a chlorine and phosgene free condensed stream. The chlorine and phosgene free stream is stripped using an inert gas to form a BCl3 product condensed stream, and an inert gas is used to pump the BCl3 product condensed stream to a product receiver.
摘要:
Low-level fluorine concentrations are removed from gases by conducting a gas stream containing fluorine over an alumina treated with chromium oxide material, thereby effectively eliminating fluorine from the gas while preventing the formation of toxic oxygen difluoride by-product.
摘要:
Herein is disclosed a method and an apparatus for preparing a highly purified gas from a crude liquid comprising the gas and one or more of a metal, particulates, water vapor, or a volatile impurity. The method comprises: (a) vaporizing the crude liquid, to yield (i) a first vapor stream comprising the gas and (ii) a first liquid stream comprising the gas; (b) removing water vapor, particulates, or both from the first vapor stream, to yield a second vapor stream comprising the gas; (c) condensing the second vapor stream, to yield a second liquid stream comprising the gas; and (d) sparging the second liquid stream with an inert gas, to yield (i) a third vapor stream comprising the gas and (ii) a third liquid stream comprising the highly purified gas. Also disclosed is a method for preparing an adsorbent to effectively remove water vapor from the gas, as well as an adsorbent so prepared.
摘要:
A method of forming an aluminum containing film on a substrate includes providing a precursor having the chemical structure: Al(NR1R2)(NR3R4)(NR5R6); where each of R1, R2, R3, R4, R5 and R6 is independently selected from the group consisting of hydrogen and an alkyl group including at least two carbon atoms. The precursor is utilized to form a film on the substrate including at least one of aluminum oxide, aluminum nitride and aluminum oxy-nitride. Each of the R1–R6 groups can be the same or different and can by straight or branched chain alkyls. An exemplary precursor that has is useful in forming aluminum containing films is tris diethylamino aluminum.
摘要翻译:在基材上形成含铝膜的方法包括提供具有以下化学结构的前体:Al(NR 1 R 2 R 2)(NR 3 R 2) R 4 R 4)(NR 5 R 6); 其中R 1,R 2,R 3,R 4,R 5, R 3和R 6独立地选自氢和包括至少两个碳原子的烷基。 该前体用于在基底上形成包含氧化铝,氮化铝和氮氧化铝中的至少一种的膜。 R 1〜R 6基团中的每一个可以相同或不同,并且可以是直链或支链烷基。 可用于形成含铝膜的示例性前体是三乙基氨基铝。