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    APPARATUS AND METHOD FOR DETECTING AN ENDPOINT IN A VAPOR PHASE ETCH
    2.
    发明申请
    APPARATUS AND METHOD FOR DETECTING AN ENDPOINT IN A VAPOR PHASE ETCH 审中-公开
    用于检测蒸气相蚀刻中的端点的装置和方法

    公开(公告)号：US20070119814A1

    公开(公告)日：2007-05-31

    申请号：US11627026

    申请日：2007-01-25

    申请人： Satyadev Patel ,  Gregory Schaadt ,  Douglas MacDonald ,  Niles MacDonald ,  Hongqin Shi

    发明人： Satyadev Patel ,  Gregory Schaadt ,  Douglas MacDonald ,  Niles MacDonald ,  Hongqin Shi

    IPC分类号： C03C25/68 ,  G01L21/30 ,  H01L21/306 ,  H01L21/461 ,  B44C1/22

    CPC分类号： H01J37/32963 ,  B81C1/00476 ,  B81C1/00587 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J37/32449 ,  H01J37/32935

    摘要： Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored; and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber

    摘要翻译： 通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物; 并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室

    Methods and apparatus of etch process control in fabrications of microstructures
    3.
    发明申请
    Methods and apparatus of etch process control in fabrications of microstructures 有权
    微观结构中蚀刻工艺控制的方法和设备

    公开(公告)号：US20050059254A1

    公开(公告)日：2005-03-17

    申请号：US10666671

    申请日：2003-09-17

    申请人： Hongqin Shi ,  Gregory Schaadt

    发明人： Hongqin Shi ,  Gregory Schaadt

    IPC分类号： B81C1/00 ,  C23F1/12 ,  H01L20060101 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/461

    CPC分类号： H01L21/31116 ,  B81C1/00531 ,  B81C2201/0109 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/67069 ,  H01L21/67253

    摘要： The present invention provides a method for removing sacrificial materials in fabrications of microstructures using a selected spontaneous vapor phase chemical etchants. During the etching process, an amount of the etchant is fed into an etch chamber for removing the sacrificial material. Additional amount of the etchant are fed into the etch chamber according to a detection of an amount or an amount of an etching product so as to maintaining a substantially constant etching rate of the sacrificial materials inside the etch chamber. Accordingly, an etching system is provided for removing the sacrificial materials based on the disclosed etching method.

    摘要翻译： 本发明提供一种使用选定的自发气相化学蚀刻剂去除微结构制造中的牺牲材料的方法。 在蚀刻过程中，将一定量的蚀刻剂送入用于去除牺牲材料的蚀刻室中。 根据蚀刻产物的量或量的检测，将蚀刻剂的额外量进料到蚀刻室中，以保持蚀刻室内的牺牲材料的蚀刻速率基本上恒定。 因此，提供了基于所公开的蚀刻方法去除牺牲材料的蚀刻系统。

    Etching method in fabrications of microstructures
    5.
    发明申请
    Etching method in fabrications of microstructures 有权

    公开(公告)号：US20050059253A1

    公开(公告)日：2005-03-17

    申请号：US10665998

    申请日：2003-09-17

    申请人： Gregory Schaadt ,  Hongqin Shi

    发明人： Gregory Schaadt ,  Hongqin Shi

    IPC分类号： B01D20060101 ,  C23F1/00 ,  G01R31/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： B81C1/00595 ,  B81C2201/0132

    摘要： The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material. Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same. The time duration of the feeding cycles are individually adjustable.

    Etching method used in fabrications of microstructures
    6.
    发明申请
    Etching method used in fabrications of microstructures 有权
    用于微结构制造中的蚀刻方法

    公开(公告)号：US20050020089A1

    公开(公告)日：2005-01-27

    申请号：US10666002

    申请日：2003-09-17

    申请人： Hongqin Shi ,  Gregory Schaadt ,  Andrew Huibers ,  Satyadev Patel

    发明人： Hongqin Shi ,  Gregory Schaadt ,  Andrew Huibers ,  Satyadev Patel

    IPC分类号： G02B26/08 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/67069 ,  B81C1/00595 ,  B81C2201/0132 ,  G02B26/0841

    摘要： The present invention discloses a method and apparatus for removing the sacrificial materials in fabrications of microstructures using a vapor phase etchant recipe having a spontaneous vapor phase chemical etchant. The vapor phase etchant recipe has a mean-free-path corresponding to the minimum thickness of the sacrificial layers between the structural layers of the microstructure. This method is of particular importance in removing the sacrificial layers underneath the structural layers of the microstructure.

    摘要翻译： 本发明公开了一种使用具有自发气相化学蚀刻剂的气相蚀刻剂配方去除微结构制造中的牺牲材料的方法和装置。 气相蚀刻剂配方具有对应于微结构的结构层之间的牺牲层的最小厚度的平均自由程。 该方法在去除微结构结构层下面的牺牲层时尤其重要。

    Thermotropic chiral nematic liquid crystalline copolymers
    9.
    发明授权
    Thermotropic chiral nematic liquid crystalline copolymers 失效
    热致度手性向列型液晶共聚物

    公开(公告)号：US5332522A

    公开(公告)日：1994-07-26

    申请号：US55120

    申请日：1993-04-29

    申请人： Shaw H. Chen ,  John C. Mastrangelo ,  Hongqin Shi ,  Sushil Krishnamurthy

    发明人： Shaw H. Chen ,  John C. Mastrangelo ,  Hongqin Shi ,  Sushil Krishnamurthy

    IPC分类号： C08F220/30 ,  C08F220/36 ,  C08F220/38 ,  C09K19/38 ,  C09K19/52 ,  C09K19/12 ,  C09K19/30 ,  G02F1/13

    CPC分类号： C09K19/3857 ,  C08F220/30 ,  C08F220/36 ,  C08F220/38 ,  C09K19/3852

    摘要： A thermotropic chiral nematic liquid crystalline copolymer composition comprises ##STR1## wherein --NEM-- and --NEM'-- are each independently nematogenic units of formula ##STR2## wherein R is H or CH.sub.3, --Q-- is an alkylene radical having 1 to about 8 carbon atoms,--X-- is --O--, --S--, or --CH.sub.2 --, --Y-- is ##STR3## --Z is --CN, --NO.sub.2 or --N.dbd.C.dbd.S, q and r are each independently 0 or 1;wherein --CHI-- is a chiral unit of formula ##STR4## wherein R is H or CH.sub.3, --Q'-- is an alkylene radical having 1 to about 8 carbon atoms,--X'-- is --O--, --S--, or --CH.sub.2 --,--Z' is an alkoxy, aralkoxy, alkylamino, or aralkylamino radical having 4 to about 12 carbon atoms and containing at least one asymmetric carbon atom,q' and r' are each independently 0 or 1;and wherein x is the mole fraction of chiral units and (y+y') is the total mole fraction of nematogenic units in said copolymer composition, and the ratio of x to (y+y') is from about 1:50 to 1:1.This compolymer composition is employed to form an optical device.

    摘要翻译： 热致的手性向列型液晶共聚物组合物包含其中-NEM-和-NEM'-各自独立地具有式（II）的制剂单元，其中R是H或CH 3，-Q-是亚烷基 具有1至约8个碳原子的基团，-X-为-O-，-S-或-CH 2 - ， - Y - 为-CN，-NO 2或-N = C = S，q 和r各自独立地为0或1; 其中-CHI-是式（III）的手性单元，其中R是H或CH 3，-Q'是具有1至约8个碳原子的亚烷基，-X'是-O-，-S - 或-CH 2 - ， - Z'是具有4至约12个碳原子并含有至少一个不对称碳原子的烷氧基，芳烷氧基，烷基氨基或芳烷基氨基，q'和r'各自独立地为0或1; 并且其中x是手性单元的摩尔分数，并且（y + y'）是所述共聚物组合物中的引产单元的总摩尔分数，并且x与（y + y'）的比率为约1:50至1 ：1。 该共聚物组合物用于形成光学装置。