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公开(公告)号:US20120074573A1
公开(公告)日:2012-03-29
申请号:US12892947
申请日:2010-09-29
Applicant: Gerald DALLMANN , Heike ROSSLAU , Norbert URBANSKY , Scott WALLACE
Inventor: Gerald DALLMANN , Heike ROSSLAU , Norbert URBANSKY , Scott WALLACE
IPC: H01L23/532 , H01L21/768
CPC classification number: H01L23/53238 , H01L21/76843 , H01L21/7685 , H01L21/76867 , H01L21/76873 , H01L23/53223 , H01L23/53252 , H01L24/03 , H01L24/05 , H01L24/48 , H01L24/85 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0362 , H01L2224/04042 , H01L2224/0508 , H01L2224/05082 , H01L2224/051 , H01L2224/05147 , H01L2224/05558 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/48 , H01L2224/85375 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/14 , H01L2224/45099 , H01L2924/00
Abstract: One or more embodiments relate to a method of forming a semiconductor device, comprising: forming a structure, the structure including at least a first element and a second element; and forming a passivation layer over the structure, the passivation layer including at least the first element and the second element, the first element and the second element of the passivation layer coming from the structure.
Abstract translation: 一个或多个实施例涉及形成半导体器件的方法,包括:形成结构,所述结构至少包括第一元件和第二元件; 以及在所述结构上形成钝化层,所述钝化层至少包括所述第一元件和所述第二元件,所述钝化层的所述第一元件和所述第二元件来自所述结构。
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2.Semiconductor structure having metal oxide or nirtride passivation layer on fill layer and method for making same 有权
Title translation: 在填充层上具有金属氧化物或氮化物钝化层的半导体结构及其制造方法公开(公告)号:US08872341B2
公开(公告)日:2014-10-28
申请号:US12892947
申请日:2010-09-29
Applicant: Gerald Dallmann , Heike Rosslau , Norbert Urbansky , Scott Wallace
Inventor: Gerald Dallmann , Heike Rosslau , Norbert Urbansky , Scott Wallace
IPC: H01L23/48 , H01L23/52 , H01L29/40 , H01L21/44 , H01L23/532 , H01L21/768 , H01L23/00
CPC classification number: H01L23/53238 , H01L21/76843 , H01L21/7685 , H01L21/76867 , H01L21/76873 , H01L23/53223 , H01L23/53252 , H01L24/03 , H01L24/05 , H01L24/48 , H01L24/85 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0362 , H01L2224/04042 , H01L2224/0508 , H01L2224/05082 , H01L2224/051 , H01L2224/05147 , H01L2224/05558 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/48 , H01L2224/85375 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/14 , H01L2224/45099 , H01L2924/00
Abstract: One or more embodiments relate to a method of forming a semiconductor device, comprising: forming a structure, the structure including at least a first element and a second element; and forming a passivation layer over the structure, the passivation layer including at least the first element and the second element, the first element and the second element of the passivation layer coming from the structure.
Abstract translation: 一个或多个实施例涉及形成半导体器件的方法,包括:形成结构,所述结构至少包括第一元件和第二元件; 以及在所述结构上形成钝化层,所述钝化层至少包括所述第一元件和所述第二元件,所述钝化层的所述第一元件和所述第二元件来自所述结构。
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