公开(公告)号：US08580687B2

公开(公告)日：2013-11-12

申请号：US12894189

申请日：2010-09-30

Applicant: Gerald Dallmann ,  Dirk Meinhold ,  Alfred Vater

Inventor： Gerald Dallmann ,  Dirk Meinhold ,  Alfred Vater

IPC: H01L21/44

CPC classification number: H01L23/48 ,  H01L21/768 ,  H01L21/76831 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer.

Abstract translation: 一个或多个实施例涉及一种用于形成半导体结构的方法，包括：提供工件; 在工件上形成介电阻挡层; 形成通过介电阻挡层的开口; 在所述电介质阻挡层之上和所述电介质阻挡层开口内形成籽晶层; 并在种子层上电镀第一填充层。

公开(公告)号：US20120074573A1

公开(公告)日：2012-03-29

申请号：US12892947

申请日：2010-09-29

Applicant: Gerald DALLMANN ,  Heike ROSSLAU ,  Norbert URBANSKY ,  Scott WALLACE

Inventor： Gerald DALLMANN ,  Heike ROSSLAU ,  Norbert URBANSKY ,  Scott WALLACE

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53223 ,  H01L23/53252 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0362 ,  H01L2224/04042 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/051 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/48 ,  H01L2224/85375 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2224/45099 ,  H01L2924/00

Abstract: One or more embodiments relate to a method of forming a semiconductor device, comprising: forming a structure, the structure including at least a first element and a second element; and forming a passivation layer over the structure, the passivation layer including at least the first element and the second element, the first element and the second element of the passivation layer coming from the structure.

Abstract translation: 一个或多个实施例涉及形成半导体器件的方法，包括：形成结构，所述结构至少包括第一元件和第二元件; 以及在所述结构上形成钝化层，所述钝化层至少包括所述第一元件和所述第二元件，所述钝化层的所述第一元件和所述第二元件来自所述结构。

公开(公告)号：US08872341B2

公开(公告)日：2014-10-28

申请号：US12892947

申请日：2010-09-29

Applicant: Gerald Dallmann ,  Heike Rosslau ,  Norbert Urbansky ,  Scott Wallace

Inventor： Gerald Dallmann ,  Heike Rosslau ,  Norbert Urbansky ,  Scott Wallace

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L23/532 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53223 ,  H01L23/53252 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0362 ,  H01L2224/04042 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/051 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/48 ,  H01L2224/85375 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2224/45099 ,  H01L2924/00

Abstract: One or more embodiments relate to a method of forming a semiconductor device, comprising: forming a structure, the structure including at least a first element and a second element; and forming a passivation layer over the structure, the passivation layer including at least the first element and the second element, the first element and the second element of the passivation layer coming from the structure.

Abstract translation: 一个或多个实施例涉及形成半导体器件的方法，包括：形成结构，所述结构至少包括第一元件和第二元件; 以及在所述结构上形成钝化层，所述钝化层至少包括所述第一元件和所述第二元件，所述钝化层的所述第一元件和所述第二元件来自所述结构。

公开(公告)号：US20120080795A1

公开(公告)日：2012-04-05

申请号：US12894189

申请日：2010-09-30

Applicant: Gerald DALLMANN ,  Dirk MEINHOLD ,  Alfred VATER

Inventor： Gerald DALLMANN ,  Dirk MEINHOLD ,  Alfred VATER

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/48 ,  H01L21/768 ,  H01L21/76831 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer.

Abstract translation: 一个或多个实施例涉及一种用于形成半导体结构的方法，包括：提供工件; 在工件上形成介电阻挡层; 形成通过介电阻挡层的开口; 在所述电介质阻挡层之上和所述电介质阻挡层开口内形成籽晶层; 并在种子层上电镀第一填充层。