摘要:
A wireless communication device using a single spiral inductor antenna and a signal receiving/transmitting method thereof operated on multi-band are provided. The single spiral inductor antenna is designed to have a plurality of different inductance paths. Different inductance values are inducted with signal paths switched by a plurality of switches so as to meet the requirements of multi-band operation. As the circuit structure of the single spiral inductor antenna is used, the circuit area is reduced effectively.
摘要:
The present invention is directed to the application of the Class of Service (CoS) feature in a directory server. The CoS feature allows user entries in a directory to be associated to service templates for multiple registered services in the directory. Once a service is registered, a CoS definition (service definition) may be created for that service under the organization entry. Once a service gets activated, an associated CoS template (service template) may be created for that service using its service definition. The template entries contain a list of shared attribute values and changes to these values get automatically applied to all the entries sharing the attribute. By creating these service definitions and templates under an organization entry, all the service privileges can be made available to all entries under the organization. Similarly, policies for resources can be defined for an organization and policy specific attributes can be made applicable to all the entries in the organization. By applying COS to roles and organizations to implement privileges for services and policies for resources, a solution with simplifies managing entries in the directories is provided. As a result, there are reduced storage requirements as well as greater flexibility and scalability of a directory server.
摘要:
Within a method for fabricating an inductor structure there is first provided a substrate. There is then formed over the substrate a planar spiral conductor layer to form a planar spiral inductor, wherein a successive series of spirals within the planar spiral conductor layer is formed with a variation in at least one of: (1) a series of linewidths of the successive series of spirals; and (2) a series of spacings of the successive series of spirals. The method contemplates a planar spiral inductor structure fabricated in accord with the method. A planar spiral inductor structure fabricated in accord with the method is characterized by an enhanced Q value of the planar spiral inductor structure.
摘要:
A system for providing service attribute information including a directory server containing a hierarchical data store associating users with service attributes through data inheritance, wherein the hierarchical data store includes an organization level and a role level, and attribute templates defined with respect to services and levels, an application for generating a query to the directory server for a service attribute of a particular user of the application, wherein the directory server, in response to the query, is for using inheritance rules from the hierarchical data store to determine and report a service attribute for the particular user of the application.
摘要:
An inductor device including a first coil conductor (310) and a second coil conductor (510), the first coil conductor (310) being located over a substrate (120) and having a first pattern and a first conductivity, and the second coil conductor (510) being located on a substantial portion of the first coil conductor (310), having a second pattern substantially conforming to the first pattern, and having a second conductivity substantially greater than the first conductivity.
摘要:
A metal-insulator-metal (MIM) capacitor structure and method of fabrication for CMOS circuits having copper interconnections are described. The method provides metal capacitors with high figure of merit Q (Xc/R) and which does not require additional masks and metal layers. The method forms a copper capacitor bottom metal (CBM) electrode while concurrently forming the pad contacts and level of copper interconnections by the damascene process. An insulating (Si3N4) metal protect layer is formed on the copper and a capacitor interelectrode dielectric layer is formed. A metal protecting buffer is used to protect the thin interelectrode layer, and openings are etched to pad contacts and interconnecting lines. A TiN/AlCu/TiN metal layer is deposited and patterned to form the capacitor top metal (CTM) electrodes, the next level of interconnections, and to provide a pad protect layer on the copper pad contacts. The thick TiN/AlCu/TiN CTM electrode reduces the capacitor series resistance and improves the capacitor figure of merit Q, while the pad protect layer protects the copper from corrosion.
摘要:
An inductor device including a first coil conductor (310) and a second coil conductor (510), the first coil conductor (310) being located over a substrate (120) and having a first pattern and a first conductivity, and the second coil conductor (510) being located on a substantial portion of the first coil conductor (310), having a second pattern substantially conforming to the first pattern, and having a second conductivity substantially greater than the first conductivity.
摘要:
This MIM structure provides metal capacitors with high figure of merit Q (Xc/R) and does not require additional masks and metal layers. A copper capacitor bottom metal (CBM) electrode is formed, while concurrently forming the pad contacts and level of copper interconnections by the damascene process. An insulating (Si3N4) metal protect layer is formed on the copper and a capacitor interelectrode dielectric layer is formed. A metal protecting buffer protects the thin interelectrode layer, and openings are etched to pad contacts and interconnecting lines. A TiN/AlCu/TiN metal layer is deposited and patterned to form the capacitor top metal (CTM) electrodes, the next level of interconnections, and to provide a pad protect layer on the copper pad contacts. The thick TiN/AlCu/TiN CTM electrode reduces the capacitor series resistance and improves the capacitor figure of merit Q, while the pad protect layer protects the copper from corrosion.
摘要:
A new method is provided for the creation of an inductive over the surface of a semiconductor substrate. A first layer of metal is created in a layer of dielectric, a second layer of metal is created overlying the first layer of metal. The first layer of metal combined with the second layer of metal form an inductor of increased height, reducing the resistivity of the inductor, increasing the Q value of the inductor. The new method of creating an inductor can be combined with creating contact points that connect to contact points in the active region of the surface of a semiconductor substrate.
摘要:
A three dimensional (3D) transformer includes a first coil and a second coil. Each coil includes a first port, a second port, a top layer metal line, inter-layer inner metal lines, inter-layer outer metal lines and a bottom layer metal line. Each metal line of the first coil and that of the second coil are correspondingly arranged to the opposite side of each other. Each of the first port is electrically connected to each of the top metal line. Each coil is arranged clockwise from the top metal line, the inter layer inner metal line down to the bottom layer metal line and arranged clockwise from the bottom layer metal line, the inter layer outer metal line up to the upper metal line of the inter layer outer metal line. Each upper metal line of the inter layer outer metal line is electrically connected to each second port.