摘要:
PURPOSE: To provide the phase shift mask which can be produced while the generation of microdefects is suppressed with relatively simple stages and with which pattern transfer with a high resolution is possible and the phase shift mask blank which is the blank material thereof.CONSTITUTION: The mask patterns to be formed on a transparent substrate 1 of this phase shift mask are composed of light transparent parts 4 which allow the transmission of light of the intensity substantially contributing to exposing and light translucent parts 2 which allow the transmission of the light of the intensity substantially contributing to exposing. The phase shift mask is so formed that the phase of the light past the light translucent parts 2 and the phase of the light past the light transparent parts 4 are varied by shifting the phase of the light passing the light translucent parts 2, by which the light rays passing near the boundary parts of the light transparent parts 4 and the light translucent parts 2 are negated with each other and the contrast in the boundary parts is well maintained. The light translucent parts 2 are composed of thin films consisting of materials consisting of oxygen, molybdenum and silicide as main constituting elements.
摘要:
A low reflective photomask blank suitable for shortened exposure wavelengths is disclosed. A photomask blank (1) having a single-layer or multilayer light-shielding film (3) arranged on a translucent substrate (2) and mainly containing a metal is characterized by comprising an antireflective film (6), which at least contains silicon and oxygen and/or nitrogen, on the light-shielding film (3).
摘要:
There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.
摘要:
There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.
摘要:
The method of manufacturing a halftone phase shift mask blank enables the accurate and easy control over the composition of an MSi semitransparent film that makes it easy to obtain an MSi semitransparent film having a desired specific component, the formation of film with ease at a good reproducibility and the reduction of defects in the layer. A novel process for the production of a halftone type phase shift mask blank adapted for the preparation of a phase shift mask having a semitransparent film formed on a transparent substrate, said semitransparent film being capable of making the phase of light transmitted directly by said semitransparent film different from that of light transmitted by said transparent substrate by a predetermined amount and reducing the intensity of light, characterized in that said semitransparent film is formed using a sputtering target comprising at least one element selected from the group consisting of metal elements and transition metal elements, silicon and at least one compound selected from the group consisting of oxide, nitride and oxinitride of these elements.
摘要:
An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.
摘要:
A photomask blank for manufacturing a phase shift mask having a light-transmitting substrate provided with a phase shift part adapted to give a predetermined phase difference to transmitted exposure light. An etching mask film serving as an etching mask when forming a phase shift part is provided on the front surface side, where the phase shift part is to be formed, of the substrate. A light-shielding film serving to shield exposure light is provided on the back surface side (opposite-side surface) of the substrate.
摘要:
A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要:
A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要:
There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.