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公开(公告)号：US07195846B2
公开(公告)日：2007-03-27
申请号：US10724734
申请日：2003-12-02
摘要： A photomask blank having a film of at least one layer formed on a substrate is manufactured by forming a film on a substrate and irradiating the film with light from a flash lamp. A photomask is manufactured from the thus manufactured photomask blank by forming a patterned resist on the film on the blank by photolithography, etching away those portions of the film which are not covered with the resist, and removing the resist. The photomask blank and photomask have minimized warpage and improved chemical resistance.
摘要翻译： 通过在基板上形成膜并用来自闪光灯的光照射薄膜来制造具有形成在基板上的至少一层的膜的光掩模坯料。 通过光刻法在坯料上的膜上形成图案化的抗蚀剂，蚀刻掉未被抗蚀剂覆盖的膜的那些部分，并除去抗蚀剂，由这样制造的光掩模坯料制造光掩模。 光掩模坯料和光掩模具有最小的翘曲和改善的耐化学性。
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公开(公告)号：US06727027B2
公开(公告)日：2004-04-27
申请号：US10020987
申请日：2001-12-19
申请人： Tetsushi Tsukamoto , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki , Tsutomu Shinagawa , Satoshi Okazaki
发明人： Tetsushi Tsukamoto , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki , Tsutomu Shinagawa , Satoshi Okazaki
IPC分类号： G03F900
摘要： In the manufacture of a photomask blank, a seed layer of a chromium material containing oxygen, nitrogen and/or carbon is formed on a transparent substrate before a light-shielding film and an antireflective film are deposited thereon. Any film on the seed layer builds up in accordance with fine granular growth, and so the resulting photomask blank has an improved surface roughness, which enables high-sensitivity detection in the process of defect inspection and circuit pattern inspection. By lithographically patterning the photomask blank, a photomask is fabricated.
摘要翻译： 在光掩模坯料的制造中，在其上沉积有遮光膜和抗反射膜之前，在透明基板上形成含有氧，氮和/或碳的铬材料的晶种层。 种子层上的任何薄膜均按照细颗粒生长形成，因此得到的光掩模坯料具有改善的表面粗糙度，这使得能够在缺陷检查和电路图形检查的过程中进行高灵敏度检测。 通过光刻图案化光掩模坯料，制造光掩模。
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公开(公告)号：US07264908B2
公开(公告)日：2007-09-04
申请号：US10834919
申请日：2004-04-30
申请人： Hideo Kaneko , Tetsushi Tsukamoto
发明人： Hideo Kaneko , Tetsushi Tsukamoto
IPC分类号： G03F9/00
摘要： There is disclosed a photo mask blank comprising at least a light-shielding film containing Cr and one or more layers of an anti-reflection film disposed on a substrate, wherein at least one layer of the anti-reflection film contains any one selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride. And there is also disclosed a photo mask blank comprising at least a light-shielding film containing Cr and two or more layers of an anti-reflection film disposed on a substrate, wherein the anti-reflection film comprises at least a layer of film with high transmittance at exposure wavelength, and a layer of film with lower transmittance at exposure wavelength than that of the layer and higher transmittance at inspection wavelength than at that exposure wavelength. Thus, there can be provided a photo mask blank having an anti-reflection film that can sufficiently reduce reflectance even if the exposure wavelength is short.
摘要翻译： 公开了一种光掩模坯料，其至少包含含有Cr的遮光膜和设置在基板上的一层或多层防反射膜，其中至少一层防反射膜包含从 由氧化硅，氮化硅和氮氧化硅组成的组。 并且还公开了一种光掩模坯料，其至少包含含有Cr的遮光膜和设置在基板上的两层或多层防反射膜，其中抗反射膜至少包括一层具有高 曝光波长下的透射率，曝光波长下的透光率低于层的透光率，检测波长的透射率高于曝光波长。 因此，可以提供一种具有防反射膜的光掩模坯料，即使曝光波长短，也可以充分降低反射率。
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公开(公告)号：US07037625B2
公开(公告)日：2006-05-02
申请号：US10179969
申请日：2002-06-26
IPC分类号： G03F1/00
CPC分类号： G03F1/58 , B32B18/00 , C04B35/16 , C04B35/58007 , C04B35/58042 , C04B35/597 , C04B2235/9653 , C04B2237/34 , C04B2237/36 , C04B2237/704 , G03F1/32
摘要： A phase shift mask blank is composed of a transparent substrate and a phase shift film thereon. The phase shift film is made of at least two types of layer stacked in alternation, each type having a different composition and containing at least one element selected from among metals, silicon, oxygen and nitrogen. The alternately layered film enables a high-quality phase shift mask blank having improved chemical resistance to be achieved.
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5.发明授权Sputtering target material, silicon-containing film forming method, and photomask blank 有权溅射靶材料，含硅膜形成方法和光掩模坯料公开(公告)号：US08647795B2
公开(公告)日：2014-02-11
申请号：US13273656
申请日：2011-10-14
申请人： Hideo Kaneko , Yokio Inazuki , Hiroki Yoshikawa
发明人： Hideo Kaneko , Yokio Inazuki , Hiroki Yoshikawa
CPC分类号： C23C14/3414 , C23C14/0036 , C23C14/0676 , C23C14/564 , G03F1/54
摘要： Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.
摘要翻译： 提供了一种硅靶材料，其中在溅射工艺期间不容易产生颗粒并形成低缺陷（高质量）含硅膜。 使用在室温下电阻率为20Ω·cm以上的硅靶材料来形成含硅膜。 硅靶材料可以是多晶的或非晶的。 然而，当硅靶材料是单晶时，可以获得更稳定的放电状态。 此外，由于其含氧量低，因此通过FZ法生长晶体的单晶硅是优选的高纯度硅靶材料。 此外，优选具有n型导电性且含有供体杂质的靶材料，以获得稳定的放电特性。 根据本发明，只有一种或多种硅靶材料可用于溅射含硅膜的成膜。
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公开(公告)号：US08309277B2
公开(公告)日：2012-11-13
申请号：US12813137
申请日：2010-06-10
IPC分类号： G03F1/50
摘要： A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.
摘要翻译： 光掩模由包括透明基板和由含过渡金属的硅基材料的上层和下层组成的遮光膜的光掩模坯料制造，上层中的O + N的含量高于下层的含量 层。 遮光膜通过氟干蚀刻通过抗蚀剂图案进行两步加工，使得膜的下部留下，并且含氧氯干蚀刻用于除去膜的其余部分。
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7.发明授权Method for inspecting photomask blank or intermediate thereof, method for determining dosage of high-energy radiation, and method for manufacturing photomask blank 有权检查光掩模坯料或其中间体的方法，用于确定高能辐射剂量的方法，以及制造光掩模坯料的方法公开(公告)号：US08168351B2
公开(公告)日：2012-05-01
申请号：US12750121
申请日：2010-03-30
申请人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.
摘要翻译： 通过在基板形状调整处理之后测量光掩模坯料的表面形貌来检查通过在基板上沉积相变膜并用高能辐射照射相移膜来进行基板形状调整处理而制造的光掩模坯料， 从光掩模坯料中去除相移膜，在移除相移膜之后测量处理过的基板的表面形貌，并比较表面形貌，由此评估在移相膜之前和之后的翘曲变化，由于 经过衬底形状调整处理的相移膜的应力。
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公开(公告)号：US07179567B2
公开(公告)日：2007-02-20
申请号：US10606894
申请日：2003-06-27
申请人： Yukio Inazuki , Masayuki Nakatsu , Tsuneo Numanami , Atsushi Tajika , Hideo Kaneko , Satoshi Okazaki
发明人： Yukio Inazuki , Masayuki Nakatsu , Tsuneo Numanami , Atsushi Tajika , Hideo Kaneko , Satoshi Okazaki
IPC分类号： G03F1/00
摘要： In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.
摘要翻译： 在包括透明基板和相移膜的相移掩模坯料中，在基板上形成相移膜之后，用臭氧浓度为至少1ppm的臭氧水进行表面处理。 所得到的相移膜的质量在于，在随后的掩模清洁步骤等期间，其经历了在浸入化学液体中时相位差和透射率的最小化变化。
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公开(公告)号：US20050260505A1
公开(公告)日：2005-11-24
申请号：US11130278
申请日：2005-05-17
IPC分类号： C23C14/00 , C23C14/06 , C25B9/00 , C25B11/00 , C25B13/00 , G03C5/00 , G03F1/32 , G03F1/54 , G03F1/68 , G03F9/00 , H01L21/027
CPC分类号： G03F1/32 , C23C14/0676
摘要： A photomask blank is prepared by forming a light-absorbing film on a transparent substrate, and irradiating the light-absorbing film with light from a flash lamp at an energy density of 3 to 40 J/cm2. A photomask is prepared by forming a resist pattern on the photomask blank by photolithography, etching away those portions of the light-absorbing film which are not covered with the resist pattern, and removing the resist.
摘要翻译： 通过在透明基板上形成光吸收膜，并以3〜40J / cm 2的能量密度从闪光灯照射光吸收膜来制备光掩模坯料。 通过光刻法在光掩模坯料上形成抗蚀剂图案，蚀刻除了未被抗蚀剂图案覆盖的光吸收膜的那些部分，并除去抗蚀剂来制备光掩模。
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公开(公告)号：US06514642B2
公开(公告)日：2003-02-04
申请号：US09790886
申请日：2001-02-23
IPC分类号： G03F900
CPC分类号： G03F1/30 , C23C14/0057 , C23C14/0682 , Y10T428/31678
摘要： In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.
摘要翻译： 在包括曝光透光基板和其上的第二透光区域的相移掩模中，第二透光区域用作移相器，并且由氟掺杂的硅化钼膜或氟掺杂的硅化铬膜 通过使用钼金属，铬金属，硅化钼或硅化铬作为靶的溅射技术形成，SiF2作为反应气体。 移相器对短波长曝光光具有高折射率，能够在最小膜厚度下实现180度相位变化，并且对于这种光也具有良好的稳定性。 相移掩模可用于将半导体集成电路制造成更小的最小特征尺寸和更高的集成度。
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