公开(公告)号：US4758399A

公开(公告)日：1988-07-19

申请号：US927710

申请日：1986-11-07

申请人： Yoshihiro Hamakawa ,  Hideyuki Takakura

发明人： Yoshihiro Hamakawa ,  Hideyuki Takakura

IPC分类号： C30B19/12 ,  C30B23/04 ,  C30B25/04 ,  C30B25/18 ,  C30B35/00 ,  H01L21/02 ,  B29C33/40

CPC分类号： C30B19/12 ,  C30B23/04 ,  C30B25/04 ,  C30B25/18 ,  Y10S117/902 ,  Y10S117/914 ,  Y10T428/12472 ,  Y10T428/12674 ,  Y10T428/12722 ,  Y10T428/12792 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12944

摘要： A method of forming a substrate for manufacturing single crystal thin films, wherein the substrate is a replica pattern of a monocrystalline or single crystal cleavage plane. Such replica pattern may be formed by pressing a material in a softened state against the cleavage plane of the single crystal, with subsequent hardening, and also, by subjecting the single crystal cleavage plane to vapor deposition or plating, and thereafter removing the formed layer from the single crystal cleavage plane.

公开(公告)号：US4735396A

公开(公告)日：1988-04-05

申请号：US732855

申请日：1985-05-10

申请人： Yoshihiro Hamakawa ,  Hideyuki Takakura

发明人： Yoshihiro Hamakawa ,  Hideyuki Takakura

IPC分类号： C30B19/12 ,  C30B23/04 ,  C30B25/04 ,  C30B25/18 ,  C30B35/00 ,  H01L21/02 ,  C03C25/06

CPC分类号： C30B19/12 ,  C30B23/04 ,  C30B25/04 ,  C30B25/18 ,  Y10S117/902 ,  Y10S117/914 ,  Y10T428/12472 ,  Y10T428/12674 ,  Y10T428/12722 ,  Y10T428/12792 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12944

摘要： The invention is directed to a substrate for manufacturing single crystal thin films, wherein the substrate is a replica pattern of a monocrystalline or single crystal cleavage plane. Such replica pattern may be formed by pressing a material in a softened state against the cleavage plane of the single crystal, with subsequent hardening, and also, by subjecting the single crystal cleavage plane to vapor deposition or plating, and thereafter removing the formed layer from the single crystal cleavage plane.

公开(公告)号：US4717630A

公开(公告)日：1988-01-05

申请号：US862199

申请日：1986-05-09

申请人： Yoshihiro Hamakawa ,  Hideyuki Takakura

发明人： Yoshihiro Hamakawa ,  Hideyuki Takakura

IPC分类号： C30B19/12 ,  C30B23/04 ,  C30B25/04 ,  C30B25/18 ,  C30B35/00 ,  H01L21/02 ,  B32B3/30

CPC分类号： C30B19/12 ,  C30B23/04 ,  C30B25/04 ,  C30B25/18 ,  Y10S117/902 ,  Y10S117/914 ,  Y10T428/12472 ,  Y10T428/12674 ,  Y10T428/12722 ,  Y10T428/12792 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12944

摘要： The invention is directed to a substrate for manufacturing single crystal thin films wherein the substrate is a replica pattern of a monocrystalline or single crystal cleavage plane. Such replica pattern may be formed by pressing a material in a softened state against the cleavage plane of the single crystal, with subsequent hardening, and also, by subjecting the single crystal cleavage plane to vapor deposition or plating, and thereafter removing the formed layer from the single crystal cleavage plane.

摘要翻译： 本发明涉及用于制造单晶薄膜的衬底，其中衬底是单晶或单晶解理面的复制图案。 这样的复制图案可以通过将软化状态的材料压在单晶的解理面上，随后硬化​​，也可以通过使单晶解理面进行气相沉积或电镀，然后将形成的层从 单晶解理面。

公开(公告)号：US20060162763A1

公开(公告)日：2006-07-27

申请号：US10606900

申请日：2003-06-27

申请人： Yoshihiro Hamakawa ,  Mikio Murozono ,  Hideyuki Takakura ,  Yukio Yamaguchi ,  Jun Yamagata ,  Hidenori Yasuda

发明人： Yoshihiro Hamakawa ,  Mikio Murozono ,  Hideyuki Takakura ,  Yukio Yamaguchi ,  Jun Yamagata ,  Hidenori Yasuda

IPC分类号： H01L31/042

CPC分类号： H01L31/042 ,  C30B11/003 ,  C30B11/006 ,  C30B29/06 ,  C30B29/607 ,  C30B29/66 ,  C30B30/06 ,  H01L31/02008 ,  H01L31/035281 ,  H01L31/0512 ,  H01L31/0547 ,  H01L31/0745 ,  H01L31/1804 ,  H02S40/36 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

公开(公告)号：US06706959B2

公开(公告)日：2004-03-16

申请号：US09988998

申请日：2001-11-21

申请人： Yoshihiro Hamakawa ,  Mikio Murozono ,  Hideyuki Takakura

发明人： Yoshihiro Hamakawa ,  Mikio Murozono ,  Hideyuki Takakura

IPC分类号： H01L310352

CPC分类号： H01L31/042 ,  C30B11/003 ,  C30B11/006 ,  C30B29/06 ,  C30B29/607 ,  C30B30/06 ,  H01L31/02008 ,  H01L31/035281 ,  H01L31/0512 ,  H01L31/0547 ,  H01L31/0745 ,  H01L31/1804 ,  H02S40/36 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

摘要翻译： 光电转换元件设置在支撑体的多个凹部中的每一个中。 由凹部的内表面反射的光在光电转换元件上发光。 光电转换元件具有大致球形并具有以下结构。 中心侧n型非晶硅（a-Si）层的外表面被具有比a-Si更宽的光学带隙的p型非晶SiC（a-SiC）层覆盖，由此pn结 形成了。 支撑体的第一导体在凹部的底部或其附近与光电转换元件的p型a-SiC层连接。 通过绝缘体与第一导体绝缘的第二导体与该光电转换元件的n型a-Si层连接。