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    Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles
    2.
    发明授权
    Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles 有权
    用于批量生产球形半导体颗粒的光伏装置和批量生产装置

    公开(公告)号：US06706959B2

    公开(公告)日：2004-03-16

    申请号：US09988998

    申请日：2001-11-21

    申请人： Yoshihiro Hamakawa ,  Mikio Murozono ,  Hideyuki Takakura

    发明人： Yoshihiro Hamakawa ,  Mikio Murozono ,  Hideyuki Takakura

    IPC分类号： H01L310352

    CPC分类号： H01L31/042 ,  C30B11/003 ,  C30B11/006 ,  C30B29/06 ,  C30B29/607 ,  C30B30/06 ,  H01L31/02008 ,  H01L31/035281 ,  H01L31/0512 ,  H01L31/0547 ,  H01L31/0745 ,  H01L31/1804 ,  H02S40/36 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    摘要： A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

    摘要翻译： 光电转换元件设置在支撑体的多个凹部中的每一个中。 由凹部的内表面反射的光在光电转换元件上发光。 光电转换元件具有大致球形并具有以下结构。 中心侧n型非晶硅（a-Si）层的外表面被具有比a-Si更宽的光学带隙的p型非晶SiC（a-SiC）层覆盖，由此pn结 形成了。 支撑体的第一导体在凹部的底部或其附近与光电转换元件的p型a-SiC层连接。 通过绝缘体与第一导体绝缘的第二导体与该光电转换元件的n型a-Si层连接。

    Magnetoresistive head and magnetic storage apparatus
    6.
    发明授权
    Magnetoresistive head and magnetic storage apparatus 失效
    磁阻磁头和磁存储装置

    公开(公告)号：US06515837B1

    公开(公告)日：2003-02-04

    申请号：US09662643

    申请日：2000-09-15

    申请人： Yoshihiro Hamakawa ,  Shiroyasu Odai ,  Katsumi Hoshino

    发明人： Yoshihiro Hamakawa ,  Shiroyasu Odai ,  Katsumi Hoshino

    IPC分类号： G11B539

    CPC分类号： G11B5/3903 ,  G11B5/3109 ,  G11B5/3133 ,  G11B5/3146

    摘要： There is provided a magnetoresistive head which is capable of suppressing the fluctuation of read output while ensuring a sufficient dielectric breakdown voltage of the shielding portions by constituting the shielding portions with a Co-based material. Namely, the lower shield film is formed of a 2-ply composite film wherein the film (12′) of the lower shield film which is disposed contacting with the lower gap insulation film (13) is constituted by an amorphous soft magnetic film, while the film (12) which is disposed away from the lower gap insulation film is constituted by a crystalline soft magnetic film, thereby making it possible to suppress the fluctuation of read output even if the gap is narrowed without deteriorating the yield relative to the dielectric breakdown.

    摘要翻译： 提供了一种磁阻头，其能够通过用Co基材料构成屏蔽部分来确保屏蔽部分的足够的介电击穿电压，从而抑制读取输出的波动。 也就是说，下屏蔽膜由2层复合膜形成，其中下屏蔽膜的与下间隙绝缘膜（13）接触的膜（12'）由非晶软磁膜构成，而 离开下间隔绝缘膜设置的膜（12）由结晶软磁膜构成，从而即使间隙变窄而不会使相对于介质击穿的屈服劣化也可以抑制读取输出的波动 。

    Magnetic head employing magnetoresistive sensor and magnetic storage and retrieval system
    7.
    发明授权
    Magnetic head employing magnetoresistive sensor and magnetic storage and retrieval system 失效
    磁头采用磁阻传感器和磁存储和检索系统

    公开(公告)号：US06327123B1

    公开(公告)日：2001-12-04

    申请号：US09368472

    申请日：1999-08-04

    申请人： Yoshiaki Kawato ,  Hiroshi Fukui ,  Kenichi Meguro ,  Yoshihiro Hamakawa

    发明人： Yoshiaki Kawato ,  Hiroshi Fukui ,  Kenichi Meguro ,  Yoshihiro Hamakawa

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996

    摘要： A magnetic head is provided with a magnetoresistive sensor scarcely susceptible to heat and provided with a fixed layer capable of creating a pinned magnetic field of a sufficient intensity. The magnetic head comprises a magnetoresistive effect film having a free layer (21), a fixed layer (105) and an intermediate layer (104), and a pair of electrodes (25a, 25b) for supplying current to the magnetoresistance effect film. The free layer (21) is formed of a ferromagnetic material and the intermediate layer (104) is formed of a nonmagnetic material. The fixed layer (105) has a first ferromagnetic film (22), a second ferromagnetic film (24) and a nonmagnetic film (23) sandwiched between the first and the second ferromagnetic films (22, 24). The second ferromagnetic film (24) farther from the free layer (21) than the first ferromagnetic layer (22) is formed of a material having the property of permanent magnets. The magnetization of the fist ferromagnetic film (22) and that of the second ferromagnetic film (24) are coupled in an antiferromagnetic coupling fashion.

    摘要翻译： 磁头设置有几乎不易受热的磁阻传感器，并且具有能够产生足够强度的固定磁场的固定层。 磁头包括具有自由层（21），固定层（105）和中间层（104）的磁阻效应膜和用于向磁阻效应膜提供电流的一对电极（25a，25b）。 自由层（21）由铁磁材料形成，中间层（104）由非磁性材料形成。 固定层（105）具有夹在第一和第二铁磁性膜（22,24）之间的第一铁磁膜（22），第二铁磁膜（24）和非磁性膜（23）。 离开自由层（21）比第一铁磁层（22）更远的第二铁磁膜（24）由具有永磁体性质的材料形成。 第一铁磁膜（22）和第二铁磁膜（24）的磁化以反铁磁耦合方式耦合。

    Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device
    8.
    发明授权
    Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device 失效
    薄膜半导体器件和使用该薄膜半导体器件的光电转换器件

    公开(公告)号：US5686734A

    公开(公告)日：1997-11-11

    申请号：US502603

    申请日：1995-07-14

    申请人： Yoshihiro Hamakawa ,  Shigetoshi Sugawa ,  Tadashi Atoji ,  Hiroaki Okamoto

    发明人： Yoshihiro Hamakawa ,  Shigetoshi Sugawa ,  Tadashi Atoji ,  Hiroaki Okamoto

    IPC分类号： H01L29/165 ,  H01L31/0376 ,  H01L31/107 ,  H01L29/12

    CPC分类号： H01L31/03765 ,  H01L29/165 ,  H01L31/1075 ,  Y02E10/548

    摘要： A high performance thin film semiconductor device having a heterojunction such as a photoelectric conversion device is disclosed. In accordance with the present invention, the thin film semiconductor device comprises a thin semiconductor layer which forms a heterojunction with a non-single crystal silicon layer or non-single crystal silicon-germanium layer, wherein the valence band discontinuity at the heterointerface arising from the difference in optical energy bandgap is as small as 0.3 eV or less and wherein the thin semiconductor layer has an optical energy bandgap greater than 2.8 eV, so that hole transport performance may not be degraded. Such a thin semiconductor layer may be formed by using silane gas and methane gas with a flow rate ratio greater than 30 at a deposition rate less than 0.5 .ANG./sec.

    摘要翻译： 公开了具有异质结的高性能薄膜半导体器件，例如光电转换器件。 根据本发明，薄膜半导体器件包括与非单晶硅层或非单晶硅 - 锗层形成异质结的薄半导体层，其中由异源结面产生的价带不连续性 光能带隙的差异小到0.3eV或更小，并且其中薄的半导体层具有大于2.8eV的光能带隙，使得空穴传输性能不会降低。 这种薄的半导体层可以通过使用硅烷气体和甲烷气体形成，其流速比大于30，沉积速率小于每分钟0.5安培。