利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

121 条记录 (耗时 0.024 秒)

    Vitreous silica crucible for pulling silicon single crystal
    1.
    发明授权
    Vitreous silica crucible for pulling silicon single crystal 有权
    硅玻璃坩埚用于拉硅单晶

    公开(公告)号：US08715415B2

    公开(公告)日：2014-05-06

    申请号：US12752374

    申请日：2010-04-01

    申请人： Makiko Kodama ,  Hiroshi Kishi ,  Minoru Kanda

    发明人： Makiko Kodama ,  Hiroshi Kishi ,  Minoru Kanda

    IPC分类号： C30B15/10

    CPC分类号： C30B15/10 ,  C30B29/06 ,  C30B35/002

    摘要： Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer(11) provided on an outer surface thereof and containing plural bubbles, and a transparent vitreous silica layer(12) provided on an inner surface and not containing bubbles substantially. The opaque vitreous silica layer(11) has a bubble diameter distribution in which the content of bubbles having a diameter of less than 40 μm is 10% or more and less than 30%, the content of bubbles having a diameter of 40 μm or more and less than 90 μm is 40% or more and less than 80%, and the content of bubbles having a diameter equal to or more than 90 μm is 10% or more and less than 30%. Relatively small bubbles contained in the opaque vitreous silica layer(11) contribute to the thermal conductivity of a crucible at an initial pulling stage, and relatively large bubbles contained in the opaque vitreous silica layer are expanded through a long-term pulling process to thereby largely contribute to the warmth retaining property of the crucible at a later pulling stage.

    摘要翻译： 本发明提供一种用于拉伸硅单晶的石英玻璃坩埚，其可以在短时间内熔化硅原料，并且通过不透明氧化硅玻璃层的时间变化提高硅单晶的产率。 石英玻璃坩埚包括设置在其外表面并且包含多个气泡的不透明玻璃状石英层（11），以及设置在内表面上且基本上不含有气泡的透明玻璃状石英层（12）。 不透明玻璃状石英层（11）具有气泡直径分布，其中直径小于40μm的气泡的含量为10％以上且小于30％，气泡的直径为40μm以上 小于90μm的是40％以上且小于80％，直径等于或大于90μm的气泡的含量为10％以上且小于30％。 包含在不透明玻璃状二氧化硅层（11）中的相对小的气泡有助于在初始拉伸阶段的坩埚的导热性，并且通过长期拉伸工艺使包含在不透明玻璃状二氧化硅层中的相对大的气泡膨胀，从而大大地扩大 有助于在稍后的拉动阶段坩埚的保温性能。

    VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME 有权
    用于拉丝硅单晶的耐火二氧化硅巧克力及其制造方法

    公开(公告)号：US20120160159A1

    公开(公告)日：2012-06-28

    申请号：US13394284

    申请日：2010-08-10

    申请人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

    发明人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

    IPC分类号： C30B15/10 ,  C03B20/00

    CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B29/06 ,  C30B29/18 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

    摘要： The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11a is wider than that of the second opaque vitreous silica portion 11b, and the material silica powder for the first opaque vitreous silica portion 11a includes more fine powder than that for the second opaque vitreous silica portion 11b.

    摘要翻译： 本发明提供一种可以在拉拔硅单晶时抑制坩埚在高温下的侧壁降低的石英玻璃坩埚，以及制造这种石英玻璃坩埚的方法。 玻璃状石英玻璃坩埚10包括设置在坩埚的外表面侧并且含有大量气泡的不透明玻璃状石英层11和设置在内表面侧的透明氧化硅玻璃层12。 不透明玻璃状石英层11包括设置在坩埚上部的第一不透明玻璃状石英部分11a和设置在坩埚下部的第二不透明玻璃状石英部分11b。 第二不透玻璃状二氧化硅部11b的比重为1.7〜2.1，第一不透明玻璃状石英部11a的比重为1.4〜1.8，小于第二不透明玻璃状二氧化硅部的比重。 用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末的粒度分布比第二不透明玻璃状二氧化硅部分11b的粒度分布宽，并且用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末包含比 第二不透明玻璃状石英部分11b。

    Vitreous silica crucible for pulling silicon single crystal and method of manufacturing the same
    3.
    发明授权
    Vitreous silica crucible for pulling silicon single crystal and method of manufacturing the same 有权
    用于拉硅单晶的玻璃状硅石坩埚及其制造方法

    公开(公告)号：US08936685B2

    公开(公告)日：2015-01-20

    申请号：US13394284

    申请日：2010-08-20

    申请人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

    发明人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

    IPC分类号： C30B15/10 ,  C03B19/09 ,  C30B29/06 ,  C30B35/00 ,  C30B29/18

    CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B29/06 ,  C30B29/18 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

    摘要： The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11a is wider than that of the second opaque vitreous silica portion 11b, and the material silica powder for the first opaque vitreous silica portion 11a includes more fine powder than that for the second opaque vitreous silica portion 11b.

    摘要翻译： 本发明提供一种可以在拉拔硅单晶时抑制坩埚在高温下的侧壁降低的石英玻璃坩埚，以及制造这种石英玻璃坩埚的方法。 玻璃状石英玻璃坩埚10包括设置在坩埚的外表面侧并且含有大量气泡的不透明玻璃状石英层11和设置在内表面侧的透明氧化硅玻璃层12。 不透明玻璃状石英层11包括设置在坩埚上部的第一不透明玻璃状石英部分11a和设置在坩埚下部的第二不透明玻璃状石英部分11b。 第二不透玻璃状二氧化硅部11b的比重为1.7〜2.1，第一不透明玻璃状石英部11a的比重为1.4〜1.8，小于第二不透明玻璃状二氧化硅部的比重。 用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末的粒度分布比第二不透明玻璃状二氧化硅部分11b的粒度分布宽，并且用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末包含比 第二不透明玻璃状石英部分11b。

    Vitreous silica crucible
    4.
    发明授权
    Vitreous silica crucible 有权
    石英玻璃坩埚

    公开(公告)号：US09115445B2

    公开(公告)日：2015-08-25

    申请号：US13148457

    申请日：2010-12-13

    申请人： Toshiaki Sudo ,  Hiroshi Kishi ,  Makiko Kodama

    发明人： Toshiaki Sudo ,  Hiroshi Kishi ,  Makiko Kodama

    IPC分类号： C30B35/00 ,  C03C19/00 ,  C03C23/00 ,  C30B15/10

    CPC分类号： C30B35/002 ,  C03C19/00 ,  C03C23/0025 ,  C30B15/10 ,  Y10T117/1032

    摘要： Provided is a vitreous silica crucible which has a special region for suppressing vibration of melt surface during pulling of a silicon single crystal and at the same time, a marking capable of accurately monitoring a changed position of the melt surface when passing through the special region. The special region for preventing sloshing of silicon melt is provided on an inner wall of a straight body portion, and the marking is provided at least at an upper end and a lower end of the special region.

    摘要翻译： 本发明提供一种玻璃状石英玻璃坩埚，其特征在于，在单晶硅拉拔期间具有抑制熔融表面的振动的特殊区域，同时具有能够精确地监测经过特殊区域时的熔融面的变化位置的标记。 用于防止硅熔体晃动的特殊区域设置在直体部分的内壁上，并且标记至少设置在特殊区域的上端和下端。

    VITREOUS SILICA CRUCIBLE
    5.
    发明申请
    VITREOUS SILICA CRUCIBLE 有权
    紫外线可溶性

    公开(公告)号：US20120260852A1

    公开(公告)日：2012-10-18

    申请号：US13148457

    申请日：2010-12-13

    申请人： Toshiaki Sudo ,  Hiroshi Kishi ,  Makiko Kodama

    发明人： Toshiaki Sudo ,  Hiroshi Kishi ,  Makiko Kodama

    IPC分类号： C30B15/10

    CPC分类号： C30B35/002 ,  C03C19/00 ,  C03C23/0025 ,  C30B15/10 ,  Y10T117/1032

    摘要： Provided is a vitreous silica crucible which has a special region for suppressing vibration of melt surface during pulling of a silicon single crystal and at the same time, a marking capable of accurately monitoring a changed position of the melt surface when passing through the special region. The special region for preventing sloshing of silicon melt is provided on an inner wall of a straight body portion, and the marking is provided at least at an upper end and a lower end of the special region.

    摘要翻译： 本发明提供一种玻璃状石英玻璃坩埚，其特征在于，在单晶硅拉拔期间具有抑制熔融表面的振动的特殊区域，同时具有能够精确地监测经过特殊区域时的熔融面的变化位置的标记。 用于防止硅熔体晃动的特殊区域设置在直体部分的内壁上，并且标记至少设置在特殊区域的上端和下端。

    Vitreous silica crucible for pulling single-crystal silicon
    7.
    发明授权
    Vitreous silica crucible for pulling single-crystal silicon 有权
    用于拉拔单晶硅的玻璃状硅石坩埚

    公开(公告)号：US08142565B2

    公开(公告)日：2012-03-27

    申请号：US12325033

    申请日：2008-11-28

    申请人： Hiroshi Kishi ,  Minoru Kanda

    发明人： Hiroshi Kishi ,  Minoru Kanda

    IPC分类号： C30B15/10 ,  C30B15/00

    CPC分类号： C30B15/10 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052

    摘要： A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range.

    摘要翻译： 一种玻璃状石英玻璃坩埚，其用于拉拔由玻璃状二氧化硅形成的具有有底圆筒形状的单晶硅，其中，在坩埚内表面的液面移动范围内，从对应于液面的位置 在完成拉伸单晶硅时，将单晶硅拉出到对应于硅熔体的液面的位置时的硅熔体的水平，包括OH基的浓度 坩埚的内表面的侵蚀厚度部分的玻璃态二氧化硅的含量高于低于位于液面移动范围以下的液面的范围。

    APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE
    9.
    发明申请
    APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE 审中-公开
    用于制造维生素二氧化硅可溶性的装置

    公开(公告)号：US20120141622A1

    公开(公告)日：2012-06-07

    申请号：US13308308

    申请日：2011-11-30

    申请人： Toshiaki Sudo ,  Hiroshi Kishi ,  Takeshi Fujita ,  Minoru Kanda

    发明人： Toshiaki Sudo ,  Hiroshi Kishi ,  Takeshi Fujita ,  Minoru Kanda

    IPC分类号： B29C35/02

    CPC分类号： C03B19/095

    摘要： Provided is an apparatus for manufacturing a vitreous silica crucible which has a structure which can reduce gaps between a partition wall and electrodes inserted into through-holes formed in the partition wall while enabling electrodes to move to adjust a heating temperature of arc discharge. A plate-shaped partition wall 15 is placed above the rotating mold 10. Electrodes 13 for heating and fusing are inserted into through-holes 16 penetrating in a thickness direction, and are directed toward the rotating mold 10. A rocking unit 40 is provided on an upper side of the partition wall 15 and rocks the electrodes 13 around virtual rocking axes P, and the virtual rocking axes P pass through the through-holes 16.

    摘要翻译： 本发明提供一种制造石英玻璃坩埚的装置，其具有能够减少分隔壁与插入形成在隔壁中的通孔的电极之间的间隙的结构，同时使电极移动以调节电弧放电的加热温度。 板状分隔壁15被放置在旋转模具10的上方。用于加热和熔合的电极13被插入穿透厚度方向的通孔16中，并被引导到旋转模具10上。摆动单元40设置在 分隔壁15的上侧并围绕虚拟摇摆轴线P围绕电极13，并且虚拟摇摆轴线P穿过通孔16。

    Method for producing quartz glass crucible
    10.
    发明授权
    Method for producing quartz glass crucible 有权
    生产石英玻璃坩埚的方法

    公开(公告)号：US08286447B2

    公开(公告)日：2012-10-16

    申请号：US12169838

    申请日：2008-07-09

    申请人： Hiroshi Kishi ,  Minoru Kanda

    发明人： Hiroshi Kishi ,  Minoru Kanda

    IPC分类号： C03B19/01 ,  C03B19/06

    CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B35/002

    摘要： A method of producing a quartz glass crucible by arc melting a quartz powder molded product loaded on the inner side of a mold while performing vacuum suction, includes initiating the melting of quartz powder from the rim edge of a quartz powder molded product, subsequently lowering the arc electrode or raising the mold to heat and melt the sections on the downside of the rim edge. The method is preferably carried out such that the inner surface of the crucible is sealed within a time corresponding to 10% of the total arc time starting from the initiation of arc melting, and the seal thickness is 3 mm or less. The quartz glass crucible thus produced is useful for the pulling up of silicon single crystals and has a uniform glass layer with fewer internal bubbles.

    摘要翻译： 通过电弧熔融装载在模具内侧的石英粉末成形体同时进行真空抽吸来制造石英玻璃坩埚的方法包括从石英粉末成型品的边缘开始熔融石英粉末，随后将 电弧电极或提升模具以加热和熔化边缘边缘的下侧的部分。 该方法优选进行，使得坩埚的内表面在从电弧熔化开始起的总电弧时间的10％的时间内密封，并且密封厚度为3mm以下。 由此制造的石英玻璃坩埚可用于提升硅单晶，并且具有均匀的具有较少内部气泡的玻璃层。