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    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    1.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器件

    公开(公告)号：US20120273743A1

    公开(公告)日：2012-11-01

    申请号：US13512774

    申请日：2010-11-29

    申请人： Shuichi Kuboi ,  Masayuki Takata ,  Tsukasa Nakai ,  Hiroyuki Fukumizu ,  Yasuhiro Nojiri ,  Kenichi Ootsuka

    发明人： Shuichi Kuboi ,  Masayuki Takata ,  Tsukasa Nakai ,  Hiroyuki Fukumizu ,  Yasuhiro Nojiri ,  Kenichi Ootsuka

    IPC分类号： H01L45/00

    CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/148

    摘要： A nonvolatile semiconductor memory device includes: a first interconnect; a second interconnect at a position opposing the first interconnect; and a variable resistance layer between the first interconnect and the second interconnect, the variable resistance layer being capable of reversibly changing between a first state and a second state by a voltage applied via the first interconnect and the second interconnect or a current supplied via the first interconnect and the second interconnect, the first state having a first resistivity, the second state having a second resistivity higher than the first resistivity. Wherein the variable resistance layer has a compound of carbon and silicon as a main component and including hydrogen.

    摘要翻译： 非易失性半导体存储器件包括：第一互连; 在与所述第一互连相对的位置处的第二互连; 以及第一互连和第二互连之间的可变电阻层，可变电阻层能够通过经由第一互连和第二互连施加的电压在第一状态和第二状态之间可逆地改变，或者经由第一互连 互连和第二互连，第一状态具有第一电阻率，第二状态具有比第一电阻率高的第二电阻率。 其中可变电阻层具有碳和硅作为主要成分并包括氢的化合物。

    Nonvolatile memory device
    2.
    发明授权
    Nonvolatile memory device 有权
    非易失性存储器件

    公开(公告)号：US08274821B2

    公开(公告)日：2012-09-25

    申请号：US12725515

    申请日：2010-03-17

    申请人： Hiroyuki Fukumizu

    发明人： Hiroyuki Fukumizu

    IPC分类号： G11C11/00

    CPC分类号： H01L27/101 ,  G11B9/04 ,  G11B9/1436

    摘要： A nonvolatile memory device, includes: a memory layer having a resistance changeable by performing at least one selected from applying an electric field and providing a current, the storage layer having a first major surface; a plurality of first electrodes provided on the first major surface; a plurality of probe electrodes disposed to face the plurality of first electrodes, the plurality of probe electrodes having a changeable relative positional relationship with the first electrodes; a drive unit connected to the plurality of probe electrodes to record information in the memory layer by causing at least the one selected from the electric field and the current between at least two of the plurality of first electrodes via the plurality of probe electrodes, the electric field having a component parallel to the first major surface, the current flowing in a direction having a component parallel to the first major surface.

    摘要翻译： 一种非易失性存储器件，包括：存储层，其具有通过执行从施加电场和提供电流中选择的至少一个而可改变的电阻，所述存储层具有第一主表面; 设置在所述第一主表面上的多个第一电极; 多个探针电极，设置成面对所述多个第一电极，所述多个探针电极与所述第一电极具有可变的相对位置关系; 驱动单元，连接到所述多个探针电极，以通过经由所述多个探针电极至少从所述多个第一电极中的至少两个之间引起从所述电场中选择的电流和所述电流来将信息记录在所述存储层中， 场具有与第一主表面平行的分量，电流沿具有与第一主表面平行的分量的方向流动。

    NONVOLATILE MEMORY DEVICE AND INFORMATION RECORDING METHOD
    4.
    发明申请
    NONVOLATILE MEMORY DEVICE AND INFORMATION RECORDING METHOD 有权
    非易失性存储器件和信息记录方法

    公开(公告)号：US20110149638A1

    公开(公告)日：2011-06-23

    申请号：US13036667

    申请日：2011-02-28

    申请人： Noriko BOTA ,  Yasuhiro Nojiri ,  Hiroyuki Fukumizu ,  Takuya Konno ,  Kazuhito Nishitani

    发明人： Noriko BOTA ,  Yasuhiro Nojiri ,  Hiroyuki Fukumizu ,  Takuya Konno ,  Kazuhito Nishitani

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    摘要： According to one embodiment, a nonvolatile memory device includes a memory layer and a driver section. The memory layer has a first state having a first resistance under application of a first voltage, a second state having a second resistance higher than the first resistance under application of a second voltage higher than the first voltage, and a third state having a third resistance between the first resistance and the second resistance under application of a third voltage between the first voltage and the second voltage. The driver section is configured to apply at least one of the first voltage, the second voltage and the third voltage to the memory layer to record information in the memory layer.

    摘要翻译： 根据一个实施例，非易失性存储器件包括存储器层和驱动器部分。 存储层具有在施加第一电压的情况下具有第一电阻的第一状态，在施加高于第一电压的第二电压的情况下具有高于第一电阻的第二电阻的第二状态，以及具有第三电阻的第三状态 在第一电压和第二电压之间施加第三电压的第一电阻和第二电阻之间。 驱动器部分被配置为将第一电压，第二电压和第三电压中的至少一个施加到存储器层，以将信息记录在存储器层中。

    NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
    5.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20100244248A1

    公开(公告)日：2010-09-30

    申请号：US12726720

    申请日：2010-03-18

    申请人： Hiroyuki Fukumizu

    发明人： Hiroyuki Fukumizu

    IPC分类号： H01L29/41 ,  H01L21/28

    CPC分类号： H01L27/2463 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147

    摘要： A nonvolatile memory device, includes: a lower side electrode aligned in a first direction; an upper side electrode positioned above the lower side electrode and aligned in a second direction intersecting the first direction; and a memory unit provided between the lower side electrode and the upper side electrode. At least one selected from the lower side electrode and the upper side electrode includes a first electrode and a second electrode, the first electrode having a forward-tapered side wall, the second electrode having a reverse-tapered side wall and being adjacent to the first electrode via an insulating layer in substantially identical plane.

    摘要翻译： 非易失性存储器件包括：沿第一方向排列的下侧电极; 上侧电极，位于下侧电极的上方并与第一方向相交的第二方向排列; 以及设置在下侧电极和上侧电极之间的存储单元。 从下侧电极和上侧电极中选择的至少一个包括第一电极和第二电极，第一电极具有前锥形侧壁，第二电极具有倒锥形侧壁并与第一电极相邻 电极通过基本相同的平面中的绝缘层。

    NONVOLATILE MEMORY DEVICE
    6.
    发明申请
    NONVOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号：US20100238710A1

    公开(公告)日：2010-09-23

    申请号：US12725515

    申请日：2010-03-17

    申请人： Hiroyuki FUKUMIZU

    发明人： Hiroyuki FUKUMIZU

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L27/101 ,  G11B9/04 ,  G11B9/1436

    摘要： A nonvolatile memory device, includes: a memory layer having a resistance changeable by performing at least one selected from applying an electric field and providing a current, the storage layer having a first major surface; a plurality of first electrodes provided on the first major surface; a plurality of probe electrodes disposed to face the plurality of first electrodes, the plurality of probe electrodes having a changeable relative positional relationship with the first electrodes; a drive unit connected to the plurality of probe electrodes to record information in the memory layer by causing at least the one selected from the electric field and the current between at least two of the plurality of first electrodes via the plurality of probe electrodes, the electric field having a component parallel to the first major surface, the current flowing in a direction having a component parallel to the first major surface.

    摘要翻译： 一种非易失性存储器件，包括：存储层，其具有通过执行从施加电场和提供电流中选择的至少一个而可改变的电阻，所述存储层具有第一主表面; 设置在所述第一主表面上的多个第一电极; 多个探针电极，设置成面对所述多个第一电极，所述多个探针电极与所述第一电极具有可变的相对位置关系; 驱动单元，连接到所述多个探针电极，以通过经由所述多个探针电极至少从所述多个第一电极中的至少两个之间引起从所述电场中选择的电流和所述电流来将信息记录在所述存储层中， 场具有与第一主表面平行的分量，电流沿具有与第一主表面平行的分量的方向流动。

    Semiconductor memory device with a memory cell block including a block film
    7.
    发明授权
    Semiconductor memory device with a memory cell block including a block film 有权
    具有包括块膜的存储单元块的半导体存储器件

    公开(公告)号：US09018613B2

    公开(公告)日：2015-04-28

    申请号：US13730342

    申请日：2012-12-28

    申请人： Yasuhiro Nojiri ,  Hiroyuki Fukumizu ,  Shigeki Kobayashi ,  Masaki Yamato

    发明人： Yasuhiro Nojiri ,  Hiroyuki Fukumizu ,  Shigeki Kobayashi ,  Masaki Yamato

    IPC分类号： H01L29/02 ,  H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/146 ,  H01L27/2454 ,  H01L27/249 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/16 ,  H01L45/1616

    摘要： A semiconductor memory device according to an embodiment comprises: a semiconductor substrate; and a memory cell block formed on the semiconductor substrate and configured having a plurality of memory cell arrays, each of the memory cell arrays including a plurality of column lines, a plurality of row lines, and a plurality of memory cells disposed at each of intersections of the plurality of column lines and the plurality of row lines, each of the memory cells including a variable resistance element having a transition metal oxide as a material, at least one of the plurality of column lines and the plurality of row lines being a polysilicon wiring line having polysilicon as a material, and the memory cell block including a block film between the variable resistance element of the memory cell and the polysilicon wiring line.

    摘要翻译： 根据实施例的半导体存储器件包括：半导体衬底; 以及存储单元块，其形成在所述半导体基板上并且具有多个存储单元阵列，所述存储单元阵列中的每一个包括多个列线，多条行线以及设置在各交叉点的多个存储单元 在多个列线和多条行线中，每个存储单元包括具有过渡金属氧化物作为材料的可变电阻元件，所述多条列线和所述多条行线中的至少一条是多晶硅 具有多晶硅作为材料的布线，并且存储单元块包括存储单元的可变电阻元件与多晶硅布线之间的块膜。

    Nonvolatile semiconductor memory device
    8.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US08735859B2

    公开(公告)日：2014-05-27

    申请号：US13512774

    申请日：2010-11-29

    申请人： Shuichi Kuboi ,  Masayuki Takata ,  Tsukasa Nakai ,  Hiroyuki Fukumizu ,  Yasuhiro Nojiri ,  Kenichi Ootsuka

    发明人： Shuichi Kuboi ,  Masayuki Takata ,  Tsukasa Nakai ,  Hiroyuki Fukumizu ,  Yasuhiro Nojiri ,  Kenichi Ootsuka

    IPC分类号： H01L29/02

    CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/148

    摘要： A nonvolatile semiconductor memory device includes: a first interconnect; a second interconnect at a position opposing the first interconnect; and a variable resistance layer between the first interconnect and the second interconnect, the variable resistance layer being capable of reversibly changing between a first state and a second state by a voltage applied via the first interconnect and the second interconnect or a current supplied via the first interconnect and the second interconnect, the first state having a first resistivity, the second state having a second resistivity higher than the first resistivity. Wherein the variable resistance layer has a compound of carbon and silicon as a main component and including hydrogen.

    摘要翻译： 非易失性半导体存储器件包括：第一互连; 在与所述第一互连相对的位置处的第二互连; 以及第一互连和第二互连之间的可变电阻层，可变电阻层能够通过经由第一互连和第二互连施加的电压在第一状态和第二状态之间可逆地改变，或者经由第一互连 互连和第二互连，第一状态具有第一电阻率，第二状态具有比第一电阻率高的第二电阻率。 其中可变电阻层具有碳和硅作为主要成分并包括氢的化合物。

    NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    非易失性存储器件及其制造方法

    公开(公告)号：US20110175053A1

    公开(公告)日：2011-07-21

    申请号：US12886257

    申请日：2010-09-20

    申请人： Hiroyuki FUKUMIZU

    发明人： Hiroyuki FUKUMIZU

    IPC分类号： H01L45/00 ,  H01L21/8239

    CPC分类号： H01L27/24

    摘要： According to one embodiment, a nonvolatile memory device includes a substrate, first electrodes, a first and a second interelectrode insulating layer, second electrodes, a memory portion and a first protrusion. The first electrodes are provided on the substrate and extend in a first direction. The first interelectrode insulating layer is provided between the first electrodes. The second electrodes are opposed to the first electrodes and extend in a second direction crossing the first direction. The second interelectrode insulating layer is provided between the second electrodes. The memory portion is provided between the first electrode and the second electrode. The first protrusion is conductive and provided at least one of between the first electrode and the memory portion and between the first interelectrode insulating layer and the memory portion, and between the second electrode and the memory portion and between the second interelectrode insulating layer and the memory portion.

    摘要翻译： 根据一个实施例，非易失性存储器件包括衬底，第一电极，第一和第二电极间绝缘层，第二电极，存储器部分和第一突起。 第一电极设置在基板上并沿第一方向延伸。 第一电极间绝缘层设置在第一电极之间。 第二电极与第一电极相对并且沿与第一方向交叉的第二方向延伸。 第二电极间绝缘层设置在第二电极之间。 存储部设置在第一电极和第二电极之间。 第一突起是导电的并且设置在第一电极和存储器部分之间以及第一电极间绝缘层和存储器部分之间以及第二电极和存储器部分之间以及第二电极间绝缘层和存储器之间的至少之一 一部分。