公开(公告)号：US06432259B1

公开(公告)日：2002-08-13

申请号：US09461682

申请日：1999-12-14

申请人： Hamid Noorbakhsh ,  Michael Welch ,  Siamak Salimian ,  Paul Luscher ,  Hongching Shan ,  Kaushik Vaidya ,  Jim Carducci ,  Evans Lee

发明人： Hamid Noorbakhsh ,  Michael Welch ,  Siamak Salimian ,  Paul Luscher ,  Hongching Shan ,  Kaushik Vaidya ,  Jim Carducci ,  Evans Lee

IPC分类号： H05H100

CPC分类号： H01J37/32522 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.

摘要翻译： 体现本发明的等离子体反应器包括晶片支撑件和室外壳构件，其具有大致面向晶片支撑件的内表面。 用于将工艺气体引入反应器的至少一个微型气体分配板被支撑在腔室外壳构件上，并且具有出口表面，该出口表面是所述晶片支撑件的内表面区域的一部分。 冷却剂系统将室外壳构件保持在低温，并且微型气体分配板与腔室外壳构件至少部分热绝缘，使得其通过等离子体加热保持在较高温度。

公开(公告)号：US20070091535A1

公开(公告)日：2007-04-26

申请号：US11561112

申请日：2006-11-17

申请人： Hamid Noorbakhsh ,  Siamak Salimian ,  Paul Luscher ,  James Carducci ,  Evans Lee ,  Kaushik Vaidya ,  Hongqing Shan ,  Michael Welch

发明人： Hamid Noorbakhsh ,  Siamak Salimian ,  Paul Luscher ,  James Carducci ,  Evans Lee ,  Kaushik Vaidya ,  Hongqing Shan ,  Michael Welch

IPC分类号： H01H47/26 ,  H01H47/32 ,  H01H50/12

CPC分类号： C23C16/45563 ,  C23C16/4401 ,  C23C16/4411 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/2001

摘要： A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.

摘要翻译： 一种热控腔室衬套，其包括具有入口和出口的通道，其适于使流体流过至少部分地形成在其中的一个或多个流体通道。 腔室衬套可以包括第一衬垫，第二衬垫或第一衬垫和第二衬垫两者。 热控腔室衬里通过将流体从温度受控的流体源流过流体通道来维持预定的温度。 通过保持预定的温度，阻止膜在室衬里上的沉积，并且由于沉积膜的应力开裂引起的颗粒的产生被最小化。

公开(公告)号：US20050003675A1

公开(公告)日：2005-01-06

申请号：US10863590

申请日：2004-06-07

申请人： James Carducci ,  Hamid Noorbakhsh ,  Evans Lee ,  Bryan Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul Luscher ,  Michael Welch

发明人： James Carducci ,  Hamid Noorbakhsh ,  Evans Lee ,  Bryan Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul Luscher ,  Michael Welch

IPC分类号： H01J37/32 ,  H01L21/00 ,  H01L21/311 ,  H01L21/60 ,  H01L21/683 ,  H01L21/687 ,  H01L21/768 ,  C23F1/00

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

摘要翻译： 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US06797639B2

公开(公告)日：2004-09-28

申请号：US10254969

申请日：2002-09-24

申请人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

发明人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

IPC分类号： H01L2100

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

公开(公告)号：US06716302B2

公开(公告)日：2004-04-06

申请号：US10253496

申请日：2002-09-24

申请人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

发明人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

IPC分类号： H05H100

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

摘要翻译： 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US6076482A

公开(公告)日：2000-06-20

申请号：US937347

申请日：1997-09-20

申请人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

发明人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

IPC分类号： H01J37/32 ,  C23C16/00 ,  C23F1/02 ,  H01L21/302

CPC分类号： H01J37/32458 ,  H01J37/321

摘要： The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna). Specifically, the invention provides a lesser ceiling height (relative to the wafer surface) over regions in which plasma ions are generated or tend to congregate and a greater ceiling height in other regions. More specifically, in the case of an overlying inductive antenna where plasma ion density tends to fall off toward the wafer periphery, the ceiling contour is such that the ceiling height increases radially, i.e., toward the wafer periphery. This promotes or increases plasma ion diffusion toward the wafer periphery as a function of the rate at which the ceiling height increases radially.

摘要翻译： 本发明轮廓地覆盖正在被处理的半导体晶片（即，室顶）上的腔表面，以促进或优化等离子体离子从其原始区域扩散到否则将具有相对低的等离子体离子的其它区域 。 这通过在晶片的那些区域上提供更大的室体积，否则经历等离子体离子的短缺，并且在经历等离子体离子的大量的晶片的那些区域（例如，由于在 后面的区域）。 因此，天花板的轮廓是促进等离子体离子扩散，其最好地补偿电感耦合源（例如，架空感应天线）典型的等离子体离子产生中的局部或非均匀图案。 具体地说，本发明提供了在其中产生等离子体离子或倾向聚集的区域和在其它区域中具有更大的天花板高度的较小的天花板高度（相对于晶片表面）。 更具体地说，在等离子体离子密度倾向于朝向晶片周边倾斜的上覆感应天线的情况下，天花板高度使天花板高度径向增加，即朝向晶片周边。 这促进或增加等离子体离子向晶片周边的扩散，这是天花板高度径向增加的速率的函数。

公开(公告)号：US06320736B1

公开(公告)日：2001-11-20

申请号：US09312909

申请日：1999-05-17

申请人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Siamak Salimian ,  Hamid Noorbakhsh ,  Efrain Quiles ,  Dennis S. Grimard

发明人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Siamak Salimian ,  Hamid Noorbakhsh ,  Efrain Quiles ,  Dennis S. Grimard

IPC分类号： H01H2300

CPC分类号： H01L21/6831 ,  C23C16/4586

摘要： A chuck 28 for holding a substrate 4 comprises a surface 27 capable of receiving the substrate 4, the surface 27 having a gas inlet port 40 and a gas exhaust port 42. A non-sealing protrusion is between the gas inlet port 40 and the gas exhaust port 42. The non-sealing protrusion 44 impedes the flow of heat transfer gas between the gas inlet port 40 and the gas exhaust port 42 without blocking the flow of heat transfer gas. Preferably, a sealing protrusion 46 is provided around the periphery of the chuck 28 to form a substantially gas-tight seal with the substrate 4 to enclose and prevent leakage of heat transfer gas into a surrounding chamber 6.

摘要翻译： 用于保持基板4的卡盘28包括能够接收基板4的表面27，表面27具有气体入口40和排气口42.非密封突起在气体入口40和气体 排气口42.非密封突起44阻止气体入口40和排气口42之间的传热气体的流动，而不阻碍传热气体的流动。 优选地，密封突起46设置在卡盘28的周边周围，以与基底4形成基本上气密的密封，以封闭并防止传热气体泄漏到周围室6中。

公开(公告)号：US06863835B1

公开(公告)日：2005-03-08

申请号：US09557990

申请日：2000-04-25

申请人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

发明人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B44C1/22 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field. Therefore, the pressure drop across the exhaust channel can be reduced in comparison with prior art designs that rely entirely on the sinuousness of the exhaust channel to block the plasma. Alternatively, if the magnetic field is strong enough, the magnetic field alone can block the plasma from reaching the exhaust pump without the need for any deflector in the exhaust channel.

摘要翻译： 一种等离子体室装置和方法，其采用磁体系统阻挡室内的等离子体到达排气泵。 腔室内部和泵之间的排气通道包括一个磁体和至少一个在废气流中产生湍流的偏转器。 由偏转器产生的磁场和湍流都增加了气体中带电粒子的复合速率，从而充分降低了带电粒子的浓度，使得等离子体和导流板的下游猝灭，从而防止了等离子体在腔室内 从到达排气泵。 磁场的等离子体约束效应允许使用比没有磁场阻挡等离子体所需要的更宽和/或更少的弯曲的排气通道。 因此，与完全依赖于排气通道的弯曲度以阻挡等离子体的现有技术设计相比，可以减小排气通道两侧的压降。 或者，如果磁场足够强，则单独的磁场可以阻止等离子体到达排气泵，而不需要排气通道中的任何偏转器。

公开(公告)号：US06773544B2

公开(公告)日：2004-08-10

申请号：US09775173

申请日：2001-01-31

申请人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

发明人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC分类号： H01L21302

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

摘要： The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.

摘要翻译： 本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。 能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出 过程区域。 一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。 磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。

公开(公告)号：US06353210B1

公开(公告)日：2002-03-05

申请号：US09547359

申请日：2000-04-11

申请人： Hamid Norrbakhsh ,  Mike Welch ,  Paul Luscher ,  Siamak Salimian ,  Brad Mays

发明人： Hamid Norrbakhsh ,  Mike Welch ,  Paul Luscher ,  Siamak Salimian ,  Brad Mays

IPC分类号： H05B100

CPC分类号： H01L21/67248 ,  C30B25/16 ,  C30B31/18

摘要： The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber is accommodated without disturbing plasma processing by providing in one of the wafer lift pins an axial void through which the optical fiber passes. The end of the fiber facing the wafer backside is coincident with the end of the hollow lift pin. The other end is coupled via an “external” optical fiber to temperature probe electronics external of the reactor chamber. The invention uses direct wafer temperature measurements with a test wafer to establish a data base of wafer temperature behavior as a function of coolant pressure and a data base of wafer temperature behavior as a function of wafer support or “puck” temperature. These data bases are then employed during processing of a production wafer to control coolant pressure in such a manner as to minimize wafer temperature deviation from the desired temperature.

摘要翻译： 本发明解决了使用包括具有接近于晶片背面并且面向晶片的端部的光纤的光学或氟光学温度传感器在处理期间连续监测晶片温度的问题。 通过在一个晶片提升销中提供光纤通过的轴向空隙来容纳该光纤，而不会干扰等离子体处理。 面向晶片背面的纤维的端部与中空提升销的端部重合。 另一端通过“外部”光纤耦合到反应室外的温度探针电子设备。 本发明使用测试晶片直接进行晶片温度测量，以建立作为冷却剂压力的函数的晶片温度特性的数据库和作为晶片支撑或“固定”温度的函数的晶片温度特性的数据库。 然后在生产晶片的处理期间采用这些数据库，以便以最小化晶片温度偏离所需温度的方式来控制冷却剂压力。