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    Temperature controlled dome-coil system for high power inductively coupled plasma systems
    4.
    发明授权
    Temperature controlled dome-coil system for high power inductively coupled plasma systems 失效
    用于高功率感应耦合等离子体系统的温度控制穹顶线圈系统

    公开(公告)号：US06822185B2

    公开(公告)日：2004-11-23

    申请号：US10267711

    申请日：2002-10-08

    申请人： Michael Welch ,  Paul E. Luscher ,  Siamak Salimian ,  Rolf Guenther ,  Zhong Qiang Hua ,  Son Phi ,  Peter Loewenhardt

    发明人： Michael Welch ,  Paul E. Luscher ,  Siamak Salimian ,  Rolf Guenther ,  Zhong Qiang Hua ,  Son Phi ,  Peter Loewenhardt

    IPC分类号： B23K900

    CPC分类号： H01L21/67248 ,  H01J37/32458 ,  H01J37/32522 ,  H01L21/67109

    摘要： The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.

    摘要翻译： 半导体制造工具的等离子体室的温度通过各种技术单独地或组合地保持基本恒定。 一种技术是提供等离子体室圆顶的外表面，其中多个翼片突出到上覆气流的高速区域，以便从腔室散发热量。 覆盖在圆顶外露的外表面上的覆盖层限定的管道还可以具有突出的唇缘或翼型件，以将气流的高速分量置于外部圆顶表面和翅片内。 其他技术包括采用高速风扇来控制气流循环，以及使用温度传感器通过处理器通风风扇来控制风扇速度，从而调节室温。

    Method for etching dielectric layers with high selectivity and low microloading
    5.
    发明授权
    Method for etching dielectric layers with high selectivity and low microloading 失效
    高选择性和低负载下蚀刻电介质层的方法

    公开(公告)号：US5843847A

    公开(公告)日：1998-12-01

    申请号：US639388

    申请日：1996-04-29

    申请人： Bryan Pu ,  Hongching Shan ,  Michael Welch

    发明人： Bryan Pu ,  Hongching Shan ,  Michael Welch

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

    CPC分类号： H01L21/31116

    摘要： A method of etching a dielectric layer on a substrate with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, the substrate is placed in a process zone, and a plasma is formed from process gas introduced into the process zone. The process gas comprises (i) fluorocarbon gas for etching the dielectric layer and for forming passivating deposits on the substrate, (ii) carbon-oxygen gas for enhancing formation of the passivating deposits, and (iii) nitrogen-containing gas for etching the passivating deposits on the substrate. The volumetric flow ratio of fluorocarbon:carbon-oxygen:nitrogen-containing gas is selected to provide a dielectric to resist etching selectivity ratio of at least about 10:1, an etch rate microloading of

    摘要翻译： 描述了以高蚀刻选择性，低刻蚀速率微载物和高蚀刻速率蚀刻衬底上的电介质层的方法。 在该方法中，将衬底放置在工艺区域中，并且将等离子体从引入工艺区域的工艺气体形成。 工艺气体包括（i）用于蚀刻介电层并用于在衬底上形成钝化沉积物的碳氟化合物气体，（ii）用于增强钝化沉积物形成的碳 - 氧气，和（iii）用于蚀刻钝化的含氮气体 沉积在基材上。 选择氟碳：碳 - 氧：含氮气体的体积流量比以提供电介质以抵抗至少约10:1的蚀刻选择率，<10％的蚀刻速率微载荷，以及在 至少约100nm / min。 优选地，选择氟碳：碳 - 氧：含氮气体的体积流量比，使得新蚀刻特征的侧壁上的钝化沉积物的形成速率近似等于钝化沉积物的去除速率。

    Broad-band adjustable power ratio phase-inverting plasma reactor
    7.
    发明授权
    Broad-band adjustable power ratio phase-inverting plasma reactor 失效
    宽带可调功率比相位等效电抗器

    公开(公告)号：US5865937A

    公开(公告)日：1999-02-02

    申请号：US517177

    申请日：1995-08-21

    申请人： Hongching Shan ,  Hiroji Hanawa ,  Robert Wu ,  Michael Welch

    发明人： Hongching Shan ,  Hiroji Hanawa ,  Robert Wu ,  Michael Welch

    IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/08

    CPC分类号： H01J37/32174

    摘要： In a plasma reactor including a vacuum chamber for containing at least a reactant gas at a selected pressure and a semiconductor wafer to be processed, a pair of electrodes for capacitively coupling radio frequency power into the chamber and a radio frequency source having a radio frequency power terminal, a circuit for coupling the radio frequency source to the pair of electrodes includes a coil having plural conductive windings and a pair of terminals bounding plural ones of the windings, the pair of terminals coupled to respective ones of the pair of electrodes, one of the windings connected to the power terminal of the radio frequency source, and a grounded conductive tap contacting the coil and slidable along the plural ones of the windings between the pair of terminals for varying a ratio of power apportioned between the pair of electrodes.

    摘要翻译： 在包括用于在选定压力下容纳至少一种反应气体的真空室和待处理的半导体晶片的等离子体反应器中，将用于将射频功率电容耦合到腔室中的一对电极和具有射频功率的射频源 端子，用于将射频源耦合到该对电极的电路包括具有多个导体绕组的线圈和限定多个绕组的一对端子，该对端子耦合到该对电极中的相应电极， 连接到射频源的电源端子的绕组以及与线圈接触的接地导线，并且可以沿着一对端子之间的多个绕组滑动，以改变在该对电极之间分配的功率比。

    High selectivity etch using an external plasma discharge
    8.
    发明授权
    High selectivity etch using an external plasma discharge 失效
    使用外部等离子体放电的高选择性蚀刻

    公开(公告)号：US06387288B1

    公开(公告)日：2002-05-14

    申请号：US09556951

    申请日：2000-04-21

    申请人： Claes Bjorkman ,  Hongching Shan ,  Michael Welch

    发明人： Claes Bjorkman ,  Hongching Shan ,  Michael Welch

    IPC分类号： H01L21302

    CPC分类号： H01J37/32871

    摘要： An apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gas entering a primary processing chamber of a plasma reactor. There is at least one scavenging chamber, each of which is connected at an inlet thereof to an etchant gas source and at an outlet thereof to a gas distribution device of the primary processing chamber. Each scavenging chamber has a radiation applicator that irradiates the interior of the scavenging chamber and creates a plasma therein from etchant gas flowing through the chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber. The applicator uses either an inductive discharge, capacitive discharge, direct current (DC) discharge or microwave discharge to irradiate the interior of the scavenging chamber and ignite the plasma. An etchant species scavenging source is also disposed within the scavenging chamber. This source provides scavenging material that interacts with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and form etch by-products comprised of substances from both the etchant species and the scavenging source. The scavenging chambers can be employed, as is or in a modified form, as excitation chambers to excite gases at optimal conditions and feed the modified gases into the primary chamber. The scavenging chamber is modified by removing its scavenging source if this source would adversely interact with the gas being excited.

    摘要翻译： 在蚀刻剂气体进入等离子体反应器的初级处理室之前，从蚀刻剂气体形成的等离子体中清除蚀刻剂物质的装置和方法。 至少有一个清除室，每个清除室在其入口处连接到蚀刻剂气体源，并在其出口连接到主处理室的气体分配装置。 每个清扫室具有辐射施加器，其辐射扫气室的内部，并从流化床中的蚀刻剂气体从蚀刻剂气体源到主处理室的气体分配装置产生等离子体。 施加器使用感应放电，电容放电，直流（DC）放电或微波放电来照射扫气室的内部并点燃等离子体。 清扫室内还设有一种蚀刻物质清除源。 该源提供与等离子体相互作用的清除材料，以清除由等离子体中的蚀刻剂气体解离产生的蚀刻剂物质，并形成由来自蚀刻剂物质和清除源的物质构成的蚀刻副产物。 清除室可以按原样或以改进形式用作激发室，以在最佳条件下激发气体并将改性气体进料到主室中。 如果该源与被激发的气体不利地相互作用，则通过去除其清除源来改进扫气室。

    Magnetically-enhanced plasma chamber with non-uniform magnetic field
    9.
    发明授权
    Magnetically-enhanced plasma chamber with non-uniform magnetic field 失效
    具有不均匀磁场的磁增强等离子体室

    公开(公告)号：US6113731A

    公开(公告)日：2000-09-05

    申请号：US735444

    申请日：1997-01-02

    申请人： Hongching Shan ,  Roger Lindley ,  Claes Bjorkman ,  Xue Yu Qian ,  Richard Plavidal ,  Bryan Pu ,  Ji Ding ,  Zongyu Li ,  Kuang-Han Ke ,  Michael Welch

    发明人： Hongching Shan ,  Roger Lindley ,  Claes Bjorkman ,  Xue Yu Qian ,  Richard Plavidal ,  Bryan Pu ,  Ji Ding ,  Zongyu Li ,  Kuang-Han Ke ,  Michael Welch

    IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/00 ,  H01L21/02 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687 ,  C23F1/02

    CPC分类号： H01L21/67069 ,  H01J37/32623 ,  H01J37/3266 ,  H01L21/68735

    摘要： A plasma chamber having a magnet which produces a magnetic field such that, within a region parallel to and adjacent to the workpiece, the direction of the magnetic field is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field, and (ii) a vector extending perpendicularly from the workpiece surface toward the plasma. Alternatively, the plasma chamber includes a north magnetic pole and a south magnetic pole located at distinct azimuths around the periphery of the workpiece. The azimuth of the south magnetic pole relative to the north magnetic pole is clockwise around the central axis, and each magnetic pole faces a direction which is more toward than away from a central axis of the workpiece area. An additional aspect of the invention is a plasma chamber having a rotating magnetic field produced by electromagnets spaced around the periphery of the workpiece which receive successive fixed amounts of electrical current during successive time intervals. During each transition between the time intervals, the current supplied to each electromagnet is changed relatively slowly or relatively quickly according to whether the current change includes a change in polarity.

    摘要翻译： 具有磁体的等离子体室产生磁场，使得在与工件平行并邻近工件的区域内，磁场的方向近似为（i）磁场强度梯度的矢量交叉积 ，和（ii）从工件表面朝向等离子体垂直延伸的矢量。 或者，等离子体室包括北磁极和位于工件周围的不同方位角处的南磁极。 南磁极相对于北磁极的方位角是围绕中心轴顺时针旋转的，每个磁极面对的方向远离工件区域的中心轴线。 本发明的另一方面是等离子体室，其具有由围绕工件周边间隔开的电磁体产生的旋转磁场，其在连续的时间间隔期间接收连续的固定量的电流。 在时间间隔期间的每个转换期间，根据电流变化是否包括极性变化，提供给每个电磁体的电流相对缓慢或相对较快地改变。

    High selectivity etch using an external plasma discharge
    10.
    发明授权
    High selectivity etch using an external plasma discharge 失效

    公开(公告)号：US6074514A

    公开(公告)日：2000-06-13

    申请号：US20959

    申请日：1998-02-09

    申请人： Claes Bjorkman ,  Hongching Shan ,  Michael Welch

    发明人： Claes Bjorkman ,  Hongching Shan ,  Michael Welch

    IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02

    CPC分类号： H01J37/32871

    摘要： An apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gas entering a primary processing chamber of a plasma reactor. There is at least one scavenging chamber, each of which is connected at an inlet thereof to an etchant gas source and at an outlet thereof to a gas distribution device of the primary processing chamber. Each scavenging chamber has a radiation applicator that irradiates the interior of the scavenging chamber and creates a plasma therein from etchant gas flowing through the chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber. The applicator uses either an inductive discharge, capacitive discharge, direct current (DC) discharge or microwave discharge to irradiate the interior of the scavenging chamber and ignite the plasma. An etchant species scavenging source is also disposed within the scavenging chamber. This source provides scavenging material that interacts with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and form etch by-products comprised of substances from both the etchant species and the scavenging source. The scavenging chambers can be employed, as is or in a modified form, as excitation chambers to excite gases at optimal conditions and feed the modified gases into the primary chamber. The scavenging chamber is modified by removing its scavenging source if this source would adversely interact with the gas being excited.