公开(公告)号：US09240442B2

公开(公告)日：2016-01-19

申请号：US13610588

申请日：2012-09-11

Applicant: Sung-Won Lim ,  Seung-Jin Yeom ,  Hyo-Seok Lee

Inventor： Sung-Won Lim ,  Seung-Jin Yeom ,  Hyo-Seok Lee

IPC: H01L21/20 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L28/91 ,  H01L27/10852

Abstract: A method for fabricating a capacitor of a semiconductor device includes forming a mold layer over a substrate, forming a plurality of preliminary openings by selectively etching the mold layer, forming a plurality of openings where each opening is formed to have a given linewidth by forming a sacrificial layer on sidewalls of the preliminary openings, and forming a plurality of storage nodes in the plurality of openings.

公开(公告)号：US20080318437A1

公开(公告)日：2008-12-25

申请号：US11834264

申请日：2007-08-06

Applicant: Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

Inventor： Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

IPC: H01L21/469

CPC classification number: H01L21/76825 ,  H01L21/76828 ,  H01L21/76829

Abstract: A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.

Abstract translation: 半导体器件通过在由金属线形成的半导体衬底上形成低介电常数层来制造; 实施低介电常数层的初级紫外线处理; 在经过一次紫外线处理的低介电常数层上形成覆盖层; 并实施包括封盖层的低介电常数层的二次紫外线处理。

公开(公告)号：US20140004678A1

公开(公告)日：2014-01-02

申请号：US13610588

申请日：2012-09-11

Applicant: Sung-Won LIM ,  Seung-Jin Yeom ,  Hyo-Seok Lee

Inventor： Sung-Won LIM ,  Seung-Jin Yeom ,  Hyo-Seok Lee

IPC: H01L21/02

CPC classification number: H01L28/91 ,  H01L27/10852

Abstract: A method for fabricating a capacitor of a semiconductor device includes forming a mold layer over a substrate, forming a plurality of preliminary openings by selectively etching the mold layer, forming a plurality of openings where each opening is formed to have a given linewidth by forming a sacrificial layer on sidewalls of the preliminary openings, and forming a plurality of storage nodes in the plurality of openings.

Abstract translation: 一种制造半导体器件的电容器的方法包括：在衬底上形成模具层，通过选择性地蚀刻模具层形成多个预备开口，通过形成一个开口形成各个开口以具有给定的线宽 在预备开口的侧壁上的牺牲层，以及在多个开口中形成多个存储节点。

公开(公告)号：US20130320549A1

公开(公告)日：2013-12-05

申请号：US13606648

申请日：2012-09-07

Applicant: Hyo-Seok LEE ,  Seung-Jin YEOM

Inventor： Hyo-Seok LEE ,  Seung-Jin YEOM

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L23/4821 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76897 ,  H01L27/10855 ,  H01L27/10885 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a semiconductor device includes forming, over a substrate, a plurality of first conductive structures which are separated from one another; forming multi-layered dielectric patterns including a first dielectric layer which covers upper ends and both sidewalls of the first conductive structures; removing portions of the first dielectric layer starting from lower end portions of the first conductive structures to define air gaps, and forming second conductive structures which are filled between the first conductive structures.

Abstract translation: 一种制造半导体器件的方法包括在衬底上形成彼此分离的多个第一导电结构; 形成包括覆盖所述第一导电结构的上端和两个侧壁的第一电介质层的多层电介质图案; 从所述第一导电结构的下端部分去除所述第一电介质层的部分以限定气隙，以及形成填充在所述第一导电结构之间的第二导电结构。

公开(公告)号：US20120001234A1

公开(公告)日：2012-01-05

申请号：US12917986

申请日：2010-11-02

Applicant: Sung-Won LIM ,  Jin-Woong Kim ,  Hyo-Seok Lee

Inventor： Sung-Won LIM ,  Jin-Woong Kim ,  Hyo-Seok Lee

IPC: H01L29/762 ,  H01L21/339

CPC classification number: H01L27/1461 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor includes first impurity regions formed in a substrate, second impurity regions formed in the first impurity regions, wherein the second impurity regions has a junction with the first impurity regions, recess patterns formed over the first impurity regions in contact with the second impurity regions, and transfer gates filling the recess patterns.

Abstract translation: 图像传感器包括形成在基板中的第一杂质区域，形成在第一杂质区域中的第二杂质区域，其中第二杂质区域与第一杂质区域结合，形成在与第二杂质接触的第一杂质区域上的凹陷图案 区域和填充凹槽图案的传送门。

公开(公告)号：US07838414B2

公开(公告)日：2010-11-23

申请号：US11834264

申请日：2007-08-06

Applicant: Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

Inventor： Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

IPC: H01L21/4763

CPC classification number: H01L21/76825 ,  H01L21/76828 ,  H01L21/76829

Abstract: A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.

Abstract translation: 半导体器件通过在由金属线形成的半导体衬底上形成低介电常数层来制造; 实施低介电常数层的初级紫外线处理; 在经过一次紫外线处理的低介电常数层上形成覆盖层; 并实施包括封盖层的低介电常数层的二次紫外线处理。

公开(公告)号：US20080214018A1

公开(公告)日：2008-09-04

申请号：US11964950

申请日：2007-12-27

Applicant: Sung Kyu MIN ,  Ja Chun KU ,  Chan Bae KIM ,  Sang Tae AHN ,  Chai O. CHUNG ,  Hyeon Ju AN ,  Hyo Seok LEE ,  Eun Jeong KIM

Inventor： Sung Kyu MIN ,  Ja Chun KU ,  Chan Bae KIM ,  Sang Tae AHN ,  Chai O. CHUNG ,  Hyeon Ju AN ,  Hyo Seok LEE ,  Eun Jeong KIM

IPC: H01L21/469 ,  C08B37/16

CPC classification number: H01L21/31695 ,  C08B37/0012 ,  C08L83/04 ,  C09D105/16 ,  C09D183/02 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02282 ,  H01L21/02337

Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Abstract translation: 使用反应性环糊精衍生物或反应性葡萄糖衍生物作为形成超低介电层的模板衍生物。 由反应性环糊精衍生物或用Si-H封端的反应性葡萄糖衍生物形成层，然后在过氧化氢气氛中固化形成超低介电层。

公开(公告)号：US09312210B2

公开(公告)日：2016-04-12

申请号：US13606648

申请日：2012-09-07

Applicant: Hyo-Seok Lee ,  Seung-Jin Yeom

Inventor： Hyo-Seok Lee ,  Seung-Jin Yeom

IPC: H01L29/40 ,  H01L23/482 ,  H01L21/764 ,  H01L21/768 ,  H01L27/108

CPC classification number: H01L23/4821 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76897 ,  H01L27/10855 ,  H01L27/10885 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a semiconductor device includes forming, over a substrate, a plurality of first conductive structures which are separated from one another; forming multi-layered dielectric patterns including a first dielectric layer which covers upper ends and both sidewalls of the first conductive structures; removing portions of the first dielectric layer starting from lower end portions of the first conductive structures to define air gaps, and forming second conductive structures which are filled between the first conductive structures.

Abstract translation: 一种制造半导体器件的方法包括在衬底上形成彼此分离的多个第一导电结构; 形成包括覆盖所述第一导电结构的上端和两个侧壁的第一电介质层的多层电介质图案; 从所述第一导电结构的下端部分去除所述第一电介质层的部分以限定气隙，以及形成填充在所述第一导电结构之间的第二导电结构。

公开(公告)号：US08507665B2

公开(公告)日：2013-08-13

申请号：US13475237

申请日：2012-05-18

Applicant: Sung Kyu Min ,  Ja Chun Ku ,  Sang Tae Ahn ,  Chai O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Eun Jeong Kim ,  Chan Bae Kim

Inventor： Sung Kyu Min ,  Ja Chun Ku ,  Sang Tae Ahn ,  Chai O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Eun Jeong Kim ,  Chan Bae Kim

IPC: C08B37/16

CPC classification number: H01L21/31695 ,  C08B37/0012 ,  C08L83/04 ,  C09D105/16 ,  C09D183/02 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02282 ,  H01L21/02337

Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Abstract translation: 使用反应性环糊精衍生物或反应性葡萄糖衍生物作为形成超低介电层的模板衍生物。 由反应性环糊精衍生物或用Si-H封端的反应性葡萄糖衍生物形成层，然后在过氧化氢气氛中固化形成超低介电层。

公开(公告)号：US08354350B2

公开(公告)日：2013-01-15

申请号：US13475178

申请日：2012-05-18

Applicant: Sung Kyu Min ,  Ja Chun Ku ,  Sang Tae Ahn ,  Chai O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Eun Jeong Kim ,  Chan Bae Kim

Inventor： Sung Kyu Min ,  Ja Chun Ku ,  Sang Tae Ahn ,  Chai O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Eun Jeong Kim ,  Chan Bae Kim

IPC: H01L21/31

CPC classification number: H01L21/31695 ,  C08B37/0012 ,  C08L83/04 ,  C09D105/16 ,  C09D183/02 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02282 ,  H01L21/02337

Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Abstract translation: 使用反应性环糊精衍生物或反应性葡萄糖衍生物作为形成超低介电层的模板衍生物。 由反应性环糊精衍生物或用Si-H封端的反应性葡萄糖衍生物形成层，然后在过氧化氢气氛中固化形成超低介电层。