公开(公告)号：US08750055B2

公开(公告)日：2014-06-10

申请号：US13295357

申请日：2011-11-14

申请人： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

发明人： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC分类号： G11C7/22

CPC分类号： G11C7/222 ,  G11C7/10 ,  G11C8/10 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32

摘要： A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

摘要翻译： 一种在非易失性存储器件上执行读取操作的方法包括接收读取命令，接收地址，检测读取使能信号的转换，基于读取使能信号的转换产生选通信号，读取对应于所接收的地址的数据 并且在选通信号切换预定次数之后输出读取的数据。

公开(公告)号：US08325517B2

公开(公告)日：2012-12-04

申请号：US12472636

申请日：2009-05-27

申请人： Hyung-Gon Kim ,  Sung-Soo Lee

发明人： Hyung-Gon Kim ,  Sung-Soo Lee

IPC分类号： G11C11/34 ,  G11C16/04 ,  G06F13/00

CPC分类号： G11C11/5628 ,  G11C11/5642

摘要： Disclosed is a program method of a non-volatile memory device. The program method includes performing a least significant bit (LSB) program operation, during which an LSB program number is stored, and performing a most significant bit (MSB) program operation in a threshold voltage state order determined according to the LSB program number.

摘要翻译： 公开了一种非易失性存储器件的程序方法。 该程序方法包括执行最低有效位（LSB）编程操作，在此期间存储一个LSB​​程序号，并以根据LSB程序号确定的阈值电压状态顺序执行最高有效位（MSB）编程操作。

公开(公告)号：US08289774B2

公开(公告)日：2012-10-16

申请号：US12414973

申请日：2009-03-31

申请人： Seung-Hyun Moon ,  Ki-Hwan Choi ,  Hyung-Gon Kim

发明人： Seung-Hyun Moon ,  Ki-Hwan Choi ,  Hyung-Gon Kim

IPC分类号： G11C11/34

CPC分类号： G11C16/0483 ,  G11C16/10

摘要： Disclosed is an operating method of a flash memory device, which includes normal memory cells and dummy memory cells. The operating method includes programming the normal memory cells and programming the dummy memory cells. A dummy pass voltage used for programming the dummy memory cells is different from a normal pass voltage used for programming the normal memory cells.

摘要翻译： 公开了一种闪速存储器件的操作方法，其包括正常存储单元和虚拟存储单元。 操作方法包括对正常存储单元进行编程并编程虚拟存储单元。 用于对虚拟存储单元进行编程的虚拟通过电压与用于编程正常存储单元的正常通过电压不同。

公开(公告)号：US20090296467A1

公开(公告)日：2009-12-03

申请号：US12472636

申请日：2009-05-27

申请人： Hyung-Gon Kim ,  Sung-Soo Lee

发明人： Hyung-Gon Kim ,  Sung-Soo Lee

IPC分类号： G11C16/04 ,  G11C16/06

CPC分类号： G11C11/5628 ,  G11C11/5642

摘要： Disclosed is a program method of a non-volatile memory device. The program method includes performing a least significant bit (LSB) program operation, during which an LSB program number is stored, and performing a most significant bit (MSB) program operation in a threshold voltage state order determined according to the LSB program number.

摘要翻译： 公开了一种非易失性存储器件的程序方法。 该程序方法包括执行最低有效位（LSB）编程操作，在此期间存储一个LSB​​程序号，并以根据LSB程序号确定的阈值电压状态顺序执行最高有效位（MSB）编程操作。

公开(公告)号：US20090262576A1

公开(公告)日：2009-10-22

申请号：US12414973

申请日：2009-03-31

申请人： Seung-Hyun MOON ,  Ki-Hwan CHOI ,  Hyung-Gon KIM

发明人： Seung-Hyun MOON ,  Ki-Hwan CHOI ,  Hyung-Gon KIM

IPC分类号： G11C16/06

CPC分类号： G11C16/0483 ,  G11C16/10

摘要： Disclosed is an operating method of a flash memory device, which includes normal memory cells and dummy memory cells. The operating method includes programming the normal memory cells and programming the dummy memory cells. A dummy pass voltage used for programming the dummy memory cells is different from a normal pass voltage used for programming the normal memory cells.

摘要翻译： 公开了一种闪速存储器件的操作方法，其包括正常存储单元和虚拟存储单元。 操作方法包括对正常存储单元进行编程并编程虚拟存储单元。 用于对虚拟存储单元进行编程的虚拟通过电压与用于编程正常存储单元的正常通过电压不同。

公开(公告)号：US07433345B2

公开(公告)日：2008-10-07

申请号：US10794402

申请日：2004-03-08

申请人： Hyung-gon Kim

发明人： Hyung-gon Kim

IPC分类号： H04Q7/28

CPC分类号： H04W16/14 ,  H04W84/12 ,  H04W92/22

摘要： A wireless LAN system and a method of using the same. The wireless LAN system includes at least one Interface Service Commercial module (ISCM) for collecting and transferring channel information related to channels in use for wireless networks located in a neighboring area; and an Access Point (AP) having a module for adjusting an established channel to a different frequency band channel based on a comparison result of the transferred channel information and the currently established channel. Accordingly, the wireless LAN system prevents crosstalk and interference with different LAN systems existing in a neighboring area to improve the efficiency of a wireless LAN system.

摘要翻译： 一种无线LAN系统及其使用方法。 无线LAN系统包括至少一个接口服务商业模块（ISCM），用于收集和传送与位于相邻区域中的无线网络使用的信道相关的信道信息; 以及接入点（AP），具有用于基于所传送的信道信息和当前建立的信道的比较结果，将建立的信道调整到不同的频带信道的模块。 因此，无线LAN系统防止与相邻区域中存在的不同LAN系统的串扰和干扰，以提高无线LAN系统的效率。

公开(公告)号：US20050013278A1

公开(公告)日：2005-01-20

申请号：US10794402

申请日：2004-03-08

申请人： Hyung-gon Kim

发明人： Hyung-gon Kim

IPC分类号： H04L12/46 ,  H04L12/28 ,  H04W16/14 ,  H04W84/12 ,  H04Q7/28

CPC分类号： H04W16/14 ,  H04W84/12 ,  H04W92/22

摘要： A wireless LAN system and a method of using the same. The wireless LAN system includes at least one Interface Service Commercial module (ISCM) for collecting and transferring channel information related to channels in use for wireless networks located in a neighboring area; and an Access Point (AP) having a module for adjusting an established channel to a different frequency band channel based on a comparison result of the transferred channel information and the currently established channel. Accordingly, the wireless LAN system prevents crosstalk and interference with different LAN systems existing in a neighboring area to improve the efficiency of a wireless LAN system.

摘要翻译： 一种无线LAN系统及其使用方法。 无线LAN系统包括至少一个接口服务商业模块（ISCM），用于收集和传送与位于相邻区域中的无线网络使用的信道相关的信道信息; 以及接入点（AP），具有用于基于所传送的信道信息和当前建立的信道的比较结果，将建立的信道调整到不同的频带信道的模块。 因此，无线LAN系统防止与相邻区域中存在的不同LAN系统的串扰和干扰，以提高无线LAN系统的效率。

公开(公告)号：US20100149877A1

公开(公告)日：2010-06-17

申请号：US12615526

申请日：2009-11-10

申请人： Hyung-gon KIM ,  Ki-hwan CHOI

发明人： Hyung-gon KIM ,  Ki-hwan CHOI

IPC分类号： G11C16/06 ,  G11C8/08 ,  G11C16/04

CPC分类号： G11C8/10 ,  G11C11/5621 ,  G11C16/04 ,  G11C16/10

摘要： A flash memory device includes a word line decoder configured to receive a row address, and decode a selected word line and a neighboring non-selected word line corresponding to the row address during a read operation, and a word line driver configured to receive data identifying the selected word line and the neighboring non-selected word line from the word line decoder, and applying a read voltage to the selected word line, a first voltage to non-selected word lines other than the neighboring non-selected word line, and a second voltage to the neighboring non-selected word line.

摘要翻译： 闪速存储器件包括：字线解码器，被配置为在读取操作期间接收行地址，并对与行地址相对应的选定字线和相邻的未选择字线进行解码，以及字线驱动器，被配置为接收标识的数据 所选择的字线和来自字线解码器的相邻的未选择的字线，以及向所选择的字线施加读取电压，将第一电压施加到除了相邻未选择字线之外的非选择字线，以及 第二电压到相邻的未选择的字线。

公开(公告)号：US07542366B2

公开(公告)日：2009-06-02

申请号：US11333983

申请日：2006-01-17

申请人： Hyung Gon Kim

发明人： Hyung Gon Kim

IPC分类号： G11C17/18

CPC分类号： G11C17/16 ,  G11C17/18 ,  G11C29/832 ,  G11C29/846

摘要： A nonvolatile semiconductor memory device includes a fuse, a switching enable circuit to generate a switching enable signal in response to a state of the fuse, and a switching unit to couple an internal output line of a page buffer set to a global output line in response to the switching enable signal.

摘要翻译： 非易失性半导体存储器件包括熔丝，响应于熔丝的状态产生开关使能信号的开关使能电路，以及响应于将页缓冲器组的内部输出线耦合到全局输出线的开关单元 到开关使能信号。

公开(公告)号：US20140241081A1

公开(公告)日：2014-08-28

申请号：US14273232

申请日：2014-05-08

申请人： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

发明人： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC分类号： G11C7/22

CPC分类号： G11C7/222 ,  G11C7/10 ,  G11C8/10 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32

摘要： A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.