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    Flash memory device and operating method of flash memory device
    1.
    发明授权
    Flash memory device and operating method of flash memory device 有权
    闪存设备和闪存设备的操作方法

    公开(公告)号：US08289774B2

    公开(公告)日：2012-10-16

    申请号：US12414973

    申请日：2009-03-31

    申请人： Seung-Hyun Moon ,  Ki-Hwan Choi ,  Hyung-Gon Kim

    发明人： Seung-Hyun Moon ,  Ki-Hwan Choi ,  Hyung-Gon Kim

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0483 ,  G11C16/10

    摘要： Disclosed is an operating method of a flash memory device, which includes normal memory cells and dummy memory cells. The operating method includes programming the normal memory cells and programming the dummy memory cells. A dummy pass voltage used for programming the dummy memory cells is different from a normal pass voltage used for programming the normal memory cells.

    摘要翻译： 公开了一种闪速存储器件的操作方法，其包括正常存储单元和虚拟存储单元。 操作方法包括对正常存储单元进行编程并编程虚拟存储单元。 用于对虚拟存储单元进行编程的虚拟通过电压与用于编程正常存储单元的正常通过电压不同。

    Nonvolatile memory device and method of driving the same
    2.
    发明授权
    Nonvolatile memory device and method of driving the same 有权
    非易失存储器件及其驱动方法

    公开(公告)号：US08325517B2

    公开(公告)日：2012-12-04

    申请号：US12472636

    申请日：2009-05-27

    申请人： Hyung-Gon Kim ,  Sung-Soo Lee

    发明人： Hyung-Gon Kim ,  Sung-Soo Lee

    IPC分类号： G11C11/34 ,  G11C16/04 ,  G06F13/00

    CPC分类号： G11C11/5628 ,  G11C11/5642

    摘要： Disclosed is a program method of a non-volatile memory device. The program method includes performing a least significant bit (LSB) program operation, during which an LSB program number is stored, and performing a most significant bit (MSB) program operation in a threshold voltage state order determined according to the LSB program number.

    摘要翻译： 公开了一种非易失性存储器件的程序方法。 该程序方法包括执行最低有效位（LSB）编程操作，在此期间存储一个LSB​​程序号，并以根据LSB程序号确定的阈值电压状态顺序执行最高有效位（MSB）编程操作。

    NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING THE SAME
    3.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING THE SAME 有权
    非易失性存储器件及其驱动方法

    公开(公告)号：US20090296467A1

    公开(公告)日：2009-12-03

    申请号：US12472636

    申请日：2009-05-27

    申请人： Hyung-Gon Kim ,  Sung-Soo Lee

    发明人： Hyung-Gon Kim ,  Sung-Soo Lee

    IPC分类号： G11C16/04 ,  G11C16/06

    CPC分类号： G11C11/5628 ,  G11C11/5642

    摘要： Disclosed is a program method of a non-volatile memory device. The program method includes performing a least significant bit (LSB) program operation, during which an LSB program number is stored, and performing a most significant bit (MSB) program operation in a threshold voltage state order determined according to the LSB program number.

    摘要翻译： 公开了一种非易失性存储器件的程序方法。 该程序方法包括执行最低有效位（LSB）编程操作，在此期间存储一个LSB​​程序号，并以根据LSB程序号确定的阈值电压状态顺序执行最高有效位（MSB）编程操作。

    Memory system and method of operation thereof
    4.
    发明授权
    Memory system and method of operation thereof 有权
    存储系统及其操作方法

    公开(公告)号：US09230669B2

    公开(公告)日：2016-01-05

    申请号：US14154641

    申请日：2014-01-14

    申请人： Bong-Kil Jung ,  Hyung-Gon Kim ,  Dae-Seok Byeon

    发明人： Bong-Kil Jung ,  Hyung-Gon Kim ,  Dae-Seok Byeon

    IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/26 ,  G11C16/24 ,  G11C29/04 ,  G06F11/10

    CPC分类号： G11C16/26 ,  G06F11/1048 ,  G11C16/24 ,  G11C29/04 ,  G11C2029/0409 ,  G11C2029/0411

    摘要： A method of operating a memory system including a non-volatile memory device and a memory controller controlling the non-volatile memory device, includes reading data from a memory cell array in a unit of a page which includes a plurality of sectors; performing error correction decoding on the read data in a unit of a sector of the page; selecting at least one target sector which includes at least one uncorrectable error and selecting at least one pass sector wherein all errors of the pass sector are correctable by the error correction decoding; inhibiting precharging of bit-lines connected to the at least one pass sector while precharging target bit lines connected to the at least one target sector; and performing a read retry operation for data in the at least one target sector.

    摘要翻译： 一种操作包括非易失性存储器件和控制非易失性存储器件的存储器控​​制器的存储器系统的方法，包括以包括多个扇区的页为单位从存储器单元阵列读取数据; 对页面的扇区的单位对读取的数据执行纠错解码; 选择至少一个目标扇区，其包括至少一个不可校正的误差并选择至少一个通过扇区，其中所述通过扇区的所有错误可通过所述纠错解码来校正; 禁止连接到所述至少一个通过扇区的位线的预充电，同时对连接到所述至少一个目标扇区的目标位线进行预充电; 以及对所述至少一个目标扇区中的数据执行读取重试操作。

    Portable terminal
    5.
    发明授权
    Portable terminal 有权
    便携式终端

    公开(公告)号：US08885351B2

    公开(公告)日：2014-11-11

    申请号：US13117648

    申请日：2011-05-27

    申请人： Hyung-Gon Kim

    发明人： Hyung-Gon Kim

    IPC分类号： H05K5/00 ,  H04M1/00 ,  H04M1/02 ,  G06F1/16 ,  H04M1/23

    CPC分类号： H04M1/0237 ,  G06F1/1624 ,  G06F1/169 ,  H04M1/00 ,  H04M1/026 ,  H04M1/233 ,  H04M2250/22

    摘要： A portable terminal is formed with reinforced structures for withstanding external impacts. The portable terminal includes a front case and an input device arranged on the front case. A first rear cover coupled to a rear side of the front case is formed from a metallic material. A second rear cover coupled to the rear side of the front case and the first rear cover is formed from a synthetic resin. And a fastening device anchors the second rear cover to the rear side of the front case. The input device is positioned on an outer surface of the front case, and the fastening device is anchored to a rear side of the input device.

    摘要翻译： 便携式终端形成有用于承受外部冲击的加强结构。 便携式终端包括前壳和布置在前壳上的输入装置。 联接到前壳体的后侧的第一后盖由金属材料形成。 联接到前壳体和第一后盖的后侧的第二后盖由合成树脂形成。 并且紧固装置将第二后盖固定到前壳的后侧。 输入装置定位在前壳体的外表面上，并且紧固装置被锚固到输入装置的后侧。

    Insert sheet and method for manufacturing the same
    6.
    发明授权
    Insert sheet and method for manufacturing the same 有权
    插入片材及其制造方法

    公开(公告)号：US08808841B2

    公开(公告)日：2014-08-19

    申请号：US13070345

    申请日：2011-03-23

    申请人： Min-Ho Lee ,  Jin-Woo Kim ,  Hyung-Gon Kim

    发明人： Min-Ho Lee ,  Jin-Woo Kim ,  Hyung-Gon Kim

    IPC分类号： B32B3/30

    CPC分类号： C23C14/205

    摘要： The present disclosure relates to insert sheets and a method for manufacturing same. A film of the present invention is applicable to a variety of insert moldings or injection moldings to achieve appearance effects such as an excellent metal texture and the like, and maintain excellence in the overall physical properties such as surface properties, formability, scratch resistance, impact resistance, heat resistance, wear resistance, chemical resistance, and light resistance, etc.

    摘要翻译： 本公开涉及插入片材及其制造方法。 本发明的薄膜可应用于各种嵌件模制品或注射成型品以实现诸如优异的金属质感等的外观效果，并且保持整体物理性能如表面性能，成型性，耐擦伤性，冲击性的卓越性 电阻，耐热性，耐磨性，耐化学性和耐光性等。

    Nonvolatile memory devices and methods of controlling the wordline voltage of the same
    8.
    发明授权
    Nonvolatile memory devices and methods of controlling the wordline voltage of the same 有权
    非易失性存储器件和控制其字线电压的方法

    公开(公告)号：US08085595B2

    公开(公告)日：2011-12-27

    申请号：US12895350

    申请日：2010-09-30

    申请人： Min-Su Kim ,  Hyung-Gon Kim

    发明人： Min-Su Kim ,  Hyung-Gon Kim

    IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

    CPC分类号： G11C16/30

    摘要： A nonvolatile memory device includes an array of memory cells arranged in rows and columns, the array of memory cells having wordlines associated therewith. A wordline voltage controller determines the levels of wordline voltages to be supplied to the respective wordlines and a wordline voltage generator generates the wordline voltages at the determined levels. Related methods are also provided.

    摘要翻译： 非易失性存储器件包括排列成行和列的存储器单元阵列，存储器单元阵列具有与之相关联的字线。 字线电压控制器确定要提供给各个字线的字线电压的电平，并且字线电压发生器以所确定的电平产生字线电压。 还提供了相关方法。

    INSERT SHEET AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    INSERT SHEET AND METHOD FOR MANUFACTURING THE SAME 有权
    插件及其制造方法

    公开(公告)号：US20110171433A1

    公开(公告)日：2011-07-14

    申请号：US13070345

    申请日：2011-03-23

    申请人： Min-Ho LEE ,  Jin-Woo Kim ,  Hyung-Gon Kim

    发明人： Min-Ho LEE ,  Jin-Woo Kim ,  Hyung-Gon Kim

    IPC分类号： B32B3/30 ,  C23C14/34

    CPC分类号： C23C14/205

    摘要： The present disclosure relates to insert sheets and a method for manufacturing same. A film of the present invention is applicable to a variety of insert moldings or injection moldings to achieve appearance effects such as an excellent metal texture and the like, and maintain excellence in the overall physical properties such as surface properties, formability, scratch resistance, impact resistance, heat resistance, wear resistance, chemical resistance, and light resistance, etc.

    摘要翻译： 本公开涉及插入片材及其制造方法。 本发明的薄膜可应用于各种嵌件模制品或注射成型品以实现诸如优异的金属质感等的外观效果，并且保持整体物理性能如表面性能，成型性，耐擦伤性，冲击性的卓越性 电阻，耐热性，耐磨性，耐化学性和耐光性等。

    NAND flash memory devices and methods of LSB/MSB programming the same
    10.
    发明授权
    NAND flash memory devices and methods of LSB/MSB programming the same 有权
    NAND闪存器件和LSB / MSB编程方法相同

    公开(公告)号：US07457157B2

    公开(公告)日：2008-11-25

    申请号：US11279067

    申请日：2006-04-07

    申请人： Hyung-Gon Kim

    发明人： Hyung-Gon Kim

    IPC分类号： G11C16/10 ,  G11C16/34 ,  G11C16/06 ,  G11C7/10

    CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C16/3459 ,  G11C2211/5621

    摘要： Multiple bits are programmed in a NAND flash memory device by programming a memory cell with an LSB; storing the LSB into a cache register from the memory cell; programming the memory cell with an MSB that is stored in a main register; storing a data bit into the main register from the memory cell during a first verifying operation; storing a data bit into the cache register from the memory cell during a second verifying operation; and transferring the data bit to the main register from the cache register.

    摘要翻译： 通过用LSB编程存储器单元，在NAND闪存器件中编程多个位; 将所述LSB从所述存储器单元存储到高速缓存寄存器中; 用存储在主寄存器中的MSB对存储单元进行编程; 在第一验证操作期间将数据位从存储器单元存储到主寄存器中; 在第二验证操作期间将数据位从存储器单元存储到高速缓存寄存器中; 并将数据位从缓存寄存器传送到主寄存器。