Apparatus and method for removing a photoresist structure from a substrate
    1.
    发明授权
    Apparatus and method for removing a photoresist structure from a substrate 有权
    从基板去除光致抗蚀剂结构的设备和方法

    公开(公告)号:US08551288B2

    公开(公告)日:2013-10-08

    申请号:US12213859

    申请日:2008-06-25

    IPC分类号: H01L21/312

    摘要: In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

    摘要翻译: 在用于从基板去除光致抗蚀剂结构的装置和方法中,用于接收基板的室包括用于将水蒸气和臭氧气体的混合物均匀分布到基板上的喷头。 喷头包括具有壁并构造成接收水蒸气的第一空间,以及连接到第一空间的第二空间,使得水蒸汽被供应到第一空间的一个或多个壁上并部分地冷凝成液态水。 臭氧气体和没有液态水的水蒸汽可以供应到第二空间以在其中形成混合物。 可以加热喷头以蒸发第一空间的给定表面上的液态水。

    Apparatus and method of etching a semiconductor substrate
    2.
    发明申请
    Apparatus and method of etching a semiconductor substrate 审中-公开
    蚀刻半导体衬底的设备和方法

    公开(公告)号:US20080096393A1

    公开(公告)日:2008-04-24

    申请号:US11907081

    申请日:2007-10-09

    IPC分类号: H01L21/461

    摘要: An apparatus for etching a semiconductor substrate may include a bath, a reaction preventing layer, and a nozzle. The bath may receive a chemical solution. Grooves may be formed at the inner wall of the bath. The reaction preventing layer may be formed on the inner wall and in the grooves of the bath to reduce or prevent a chemical reaction between the chemical solution and the bath. The nozzle may supply the chemical solution to the bath. In a method of etching a semiconductor substrate, the semiconductor substrate having trench structures and an insulation layer pattern may be prepared. The semiconductor substrate may then be dipped into the bath having the reaction preventing layer in which the chemical solution is received. The semiconductor substrate may be reacted with the chemical solution by blocking the chemical reaction between the chemical solution and the bath to etch the insulation layer pattern and the trench structure at a uniform rate.

    摘要翻译: 用于蚀刻半导体衬底的设备可以包括浴,反应防止层和喷嘴。 浴可以接受化学溶液。 槽可以形成在浴的内壁。 反应防止层可以形成在浴的内壁和凹槽中,以减少或防止化学溶液和浴之间的化学反应。 喷嘴可以将化学溶液供应到浴中。 在蚀刻半导体衬底的方法中,可以制备具有沟槽结构和绝缘层图案的半导体衬底。 然后将半导体衬底浸入具有接收化学溶液的反应防止层的浴中。 半导体衬底可以通过阻止化学溶液和浴之间的化学反应与化学溶液反应,以均匀的速率蚀刻绝缘层图案和沟槽结构。

    Apparatus and method for removing a photoresist structure from a substrate
    4.
    发明申请
    Apparatus and method for removing a photoresist structure from a substrate 有权
    从基板去除光致抗蚀剂结构的设备和方法

    公开(公告)号:US20070020943A1

    公开(公告)日:2007-01-25

    申请号:US11488706

    申请日:2006-07-19

    IPC分类号: H01L21/306 H01L21/302

    摘要: In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

    摘要翻译: 在用于从基板去除光致抗蚀剂结构的装置和方法中,用于接收基板的室包括用于将水蒸气和臭氧气体的混合物均匀分布到基板上的喷头。 喷头包括具有壁并构造成接收水蒸气的第一空间,以及连接到第一空间的第二空间,使得水蒸汽被供应到第一空间的一个或多个壁上并部分地冷凝成液态水。 臭氧气体和没有液态水的水蒸汽可以供应到第二空间以在其中形成混合物。 可以加热喷头以蒸发第一空间的给定表面上的液态水。

    Apparatus and method for removing a photoresist structure from a substrate
    7.
    发明申请
    Apparatus and method for removing a photoresist structure from a substrate 有权
    从基板去除光致抗蚀剂结构的设备和方法

    公开(公告)号:US20080264566A1

    公开(公告)日:2008-10-30

    申请号:US12213859

    申请日:2008-06-25

    IPC分类号: H01L21/306

    摘要: In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

    摘要翻译: 在用于从基板去除光致抗蚀剂结构的装置和方法中,用于接收基板的室包括用于将水蒸气和臭氧气体的混合物均匀分布到基板上的喷头。 喷头包括具有壁并构造成接收水蒸气的第一空间,以及连接到第一空间的第二空间,使得水蒸汽被供应到第一空间的一个或多个壁上并部分地冷凝成液态水。 臭氧气体和没有液态水的水蒸汽可以供应到第二空间以在其中形成混合物。 可以加热喷头以蒸发第一空间的给定表面上的液态水。

    SINGLE-SUBSTRATE TYPE APPARATUS FOR PROCESSING A SUBSTRATE
    8.
    发明申请
    SINGLE-SUBSTRATE TYPE APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开
    用于处理基板的单基板类型设备

    公开(公告)号:US20080047576A1

    公开(公告)日:2008-02-28

    申请号:US11844241

    申请日:2007-08-23

    IPC分类号: B08B3/12 B08B3/10

    CPC分类号: H01L21/67057 H01L21/67034

    摘要: In a single-substrate type apparatus for processing a substrate, the apparatus includes a chamber, a bottom panel, a solution supplying part and a substrate holder. The chamber has an upper portion and a lower portion. The bottom panel is detachably connected to the lower portion. The solution supplying part is connected to the bottom panel to supply a processing solution to the substrate in the chamber. The substrate holder provides the substrate into the chamber, the substrate holder holding both side portions of the substrate such that the substrate is vertically arranged.

    摘要翻译: 在用于处理基板的单基板型装置中,该装置包括室,底板,溶液供应部和基板保持件。 腔室具有上部和下部。 底板可拆卸地连接到下部。 溶液供应部分连接到底板,以将处理溶液供应到室中的基板。 衬底保持器将衬底提供到腔室中,衬底保持器保持衬底的两侧部分,使得衬底垂直布置。