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    Deep trench cell capacitor with inverting counter electrode
    1.
    发明授权
    Deep trench cell capacitor with inverting counter electrode 失效
    具有反相对电极的深沟槽电容器

    公开(公告)号：US06265278B1

    公开(公告)日：2001-07-24

    申请号：US09078836

    申请日：1998-05-14

    申请人： Johann Alsmeier ,  Jack Allan Mandelman ,  James Anthony O'Neill ,  Christopher Parks ,  Paul Christian Parries

    发明人： Johann Alsmeier ,  Jack Allan Mandelman ,  James Anthony O'Neill ,  Christopher Parks ,  Paul Christian Parries

    IPC分类号： H01L2120

    CPC分类号： H01L27/10829

    摘要： The preferred embodiment provides an integrated circuit capacitor that achieves a high capacitance by using an inversion layer in the substrate as the plate counter electrode for the capacitor. The inversion layer is created by forming a trench capacitor in a lightly doped substrate. With a sufficient workfunction difference between the storage node material and the isolation band the surface of the lightly doped substrate inverts, with the inversion charge being supplied by the isolation band. This inversion layer serves as the plate counter electrode for the capacitor.

    摘要翻译： 优选实施例提供一种集成电路电容器，其通过使用基板中的反转层作为用于电容器的板对电极来实现高电容。 通过在轻掺杂衬底中形成沟槽电容器来产生反型层。 在存储节点材料和隔离带之间具有足够的功函数差异时，轻掺杂衬底的表面反转，反转电荷由隔离带提供。 该反转层用作电容器的板对置电极。

    Control of etch selectivity
    3.
    发明授权
    Control of etch selectivity 失效
    控制蚀刻选择性

    公开(公告)号：US5770097A

    公开(公告)日：1998-06-23

    申请号：US873055

    申请日：1997-06-11

    申请人： James Anthony O'Neill ,  Jyothi Singh

    发明人： James Anthony O'Neill ,  Jyothi Singh

    IPC分类号： G11B5/84 ,  G11B5/855 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/66 ,  H01L21/302

    CPC分类号： B24B37/013 ,  G11B5/84 ,  G11B5/855 ,  H01J37/32935 ,  H01J37/3299 ,  H01L21/3065 ,  H01L21/31116 ,  H01L22/26

    摘要： Selective etching of separate materials in a manufacture of a device, such as a layer of silicon dioxide on a substrate of silicon in a semiconductor device, is accomplished in a reaction chamber having an RF electromagnetic field which interacts with plural etchants in gaseous phase to produce ions for etching the materials. The ratio of the concentration of etchants affect the relative rates of etching the respective materials. By pulsing the rf excitation waveform, intervals of deenergization of the field are produced repetitively wherein, during any one of these intervals, there is a decay in the concentration of each ionized etchant. Rates of decay and the resulting lifetimes differ for each of the etchants. Thereby, by adjustment of the duration of the deenergization interval, the average concentration of one etchant relative to the average concentration of a second etchant can be varied to attain selective etching of the materials. Continuous monitoring of etchant concentrations, as by ultraviolet absorption spectroscopy, permits automatic control of the modulation to attain a desired etch selectivity in real time.

    摘要翻译： 在半导体器件中硅衬底上的诸如二氧化硅层的器件的制造中的分离材料的选择性蚀刻在具有RF电磁场的反应室中完成，该RF电磁场与气相中的多个蚀刻剂相互作用以产生 用于蚀刻材料的离子。 蚀刻剂浓度的比率影响蚀刻相应材料的相对速率。 通过脉冲激励波形，重复地产生场的去激励间隔，其中在这些间隔中的任何一个期间，每个离子蚀刻剂的浓度都有衰减。 每种蚀刻剂的衰减速率和所得的寿命都不同。 因此，通过调节断电间隔的持续时间，可以改变相对于第二蚀刻剂的平均浓度的一个蚀刻剂的平均浓度以获得材料的选择性蚀刻。 通过紫外吸收光谱法连续监测蚀刻剂浓度，允许自动控制调制以实时获得所需的蚀刻选择性。

    Combined emissivity and radiance measurement for determination of temperature of radiant object
    5.
    发明授权
    Combined emissivity and radiance measurement for determination of temperature of radiant object 失效
    辐射对象温度的组合发射率和辐射度测量

    公开(公告)号：US5993059A

    公开(公告)日：1999-11-30

    申请号：US40045

    申请日：1998-03-17

    申请人： James Anthony O'Neill ,  Jyothi Singh

    发明人： James Anthony O'Neill ,  Jyothi Singh

    IPC分类号： G01J5/00 ,  G01J5/04 ,  G01J5/08 ,  G01J5/62 ,  G01N25/00

    CPC分类号： G01J5/62 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/041 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/0834 ,  G01J5/0862

    摘要： A system and method of measurement of emissivity and radiance of a wafer in a rapid thermal processing chamber enables determination of wafer temperature and control of temperature of the wafer. Mirrors enclose the chamber and reflect radiation from lamps within the chamber to heat the workpiece of interest. One or more viewing ports are provided in one of the mirrors to allow for the egress of radiant energy emitted by the wafer. The wavelength of the exiting radiation is selected by an optical filter having a passband which passes radiation at wavelengths emitted by the wafer while excluding radiation emitted by heating lamps. A chopper having surface regions differing in their reflectivity and transmissivity is positioned along an optical path of radiation propagating through the one or more ports, this resulting in a pulsation of detected radiation. The ratio of the detected intensities of the radiation pulses is used to determine wafer reflectance based on reflectivity and transmissivity of the reflective portion of the chopper. The maximum intensity of radiation is also taken as a measure of radiance. The reflectance is employed to calculate the emissivity, and the emissivity in combination with the radiance are employed to calculate the wafer temperature.

    摘要翻译： 在快速热处理室中测量晶片的发射率和辐射度的系统和方法能够确定晶片温度和晶片温度的控制。 反射镜包围室并且反射室内的灯的辐射以加热感兴趣的工件。 在一个反射镜中提供一个或多个观察端口，以允许由晶片发出的辐射能的出射。 出射辐射的波长通过具有通过透光的滤光器来选择，该通带通过辐射在晶片发射的波长处，同时排除由加热灯发出的辐射。 具有其反射率和透射率不同的表面区域的斩波器沿着传播通过一个或多个端口的辐射的光路被定位，这导致检测到的辐射的脉动。 使用检测到的辐射脉冲强度的比率来确定基于斩光器的反射部分的反射率和透射率的晶片反射率。 辐射的最大强度也作为辐射度量。 采用反射率计算发射率，采用辐射率与发射率的结合来计算晶圆温度。

    Combined emissivity and radiance measurement for the determination of the temperature of a radiant object
    6.
    发明授权
    Combined emissivity and radiance measurement for the determination of the temperature of a radiant object 失效
    用于确定辐射物体温度的组合发射率和辐射度测量

    公开(公告)号：US5738440A

    公开(公告)日：1998-04-14

    申请号：US363143

    申请日：1994-12-23

    申请人： James Anthony O'Neill ,  Jyothi Singh

    发明人： James Anthony O'Neill ,  Jyothi Singh

    IPC分类号： G01J5/00 ,  G01J5/04 ,  G01J5/08 ,  G01J5/62 ,  G01N25/00

    CPC分类号： G01J5/62 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/041 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/0834 ,  G01J5/0862

    摘要： A system and method of measurement of emissivity and radiance of a wafer in a rapid thermal processing chamber enables determination of wafer temperature and control of temperature of the wafer. Mirrors enclose the chamber and reflect radiation from lamps within the chamber to heat the workpiece of interest. One or more viewing ports are provided in one of the mirrors to allow for the egress of radiant energy emitted by the wafer. The wavelength of the exiting radiation is selected by an optical filter having a passband which passes radiation at wavelengths emitted by the wafer while excluding radiation emitted by heating lamps. A chopper having surface regions differing in their reflectivity and transmissivity is positioned along an optical path of radiation propagating through the one or more ports, this resulting in a pulsation of detected radiation. The ratio of the detected intensities of the radiation pulses is used to determine wafer reflectance based on reflectivity and transmissivity of the reflective portion of the chopper. The maximum intensity of radiation is also taken as a measure of radiance. The reflectance is employed to calculate the emissivity, and the emissivity in combination with the radiance are employed to calculate the wafer temperature.

    摘要翻译： 在快速热处理室中测量晶片的发射率和辐射度的系统和方法能够确定晶片温度和晶片温度的控制。 反射镜包围室并且反射室内的灯的辐射以加热感兴趣的工件。 在一个反射镜中提供一个或多个观察端口，以允许由晶片发出的辐射能的出射。 出射辐射的波长通过具有通过透光的滤光器来选择，该通带通过辐射在晶片发射的波长处，同时排除由加热灯发出的辐射。 具有其反射率和透射率不同的表面区域的斩波器沿着传播通过一个或多个端口的辐射的光路被定位，这导致检测到的辐射的脉动。 使用检测到的辐射脉冲强度的比率来确定基于斩光器的反射部分的反射率和透射率的晶片反射率。 辐射的最大强度也作为辐射度量。 采用反射率计算发射率，采用辐射率与发射率的结合来计算晶圆温度。

    Control of etch selectivity
    7.
    发明授权
    Control of etch selectivity 失效
    控制蚀刻选择性

    公开(公告)号：US5683538A

    公开(公告)日：1997-11-04

    申请号：US363674

    申请日：1994-12-23

    申请人： James Anthony O'Neill ,  Jyothi Singh

    发明人： James Anthony O'Neill ,  Jyothi Singh

    IPC分类号： G11B5/84 ,  G11B5/855 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/66 ,  C23F1/02 ,  H01L21/302

    CPC分类号： B24B37/013 ,  G11B5/84 ,  G11B5/855 ,  H01J37/32935 ,  H01J37/3299 ,  H01L21/3065 ,  H01L21/31116 ,  H01L22/26

    摘要： Selective etching of separate materials in a manufacture of a device, such as a layer of silicon dioxide on a substrate of silicon in a semiconductor device, is accomplished in a reaction chamber having an RF electromagnetic field which interacts with plural etchants in gaseous phase to produce ions for etching the materials. The ratio of the concentration of etchants affect the relative rates of etching the respective materials. By pulsing the rf excitation waveform, intervals of deenergization of the field are produced repetitively wherein, during any one of these intervals, there is a decay in the concentration of each ionized etchant. Rates of decay and the resulting lifetimes differ for each of the etchants. Thereby, by adjustment of the duration of the deenergization interval, the average concentration of one etchant relative to the average concentration of a second etchant can be varied to attain selective etching of the materials. Continuous monitoring of etchant concentrations, as by ultraviolet absorption spectroscopy, permits automatic control of the modulation to attain a desired etch selectivity in real time.

    摘要翻译： 在半导体器件中硅衬底上的诸如二氧化硅层的器件的制造中的分离材料的选择性蚀刻在具有RF电磁场的反应室中完成，该RF电磁场与气相中的多个蚀刻剂相互作用以产生 用于蚀刻材料的离子。 蚀刻剂浓度的比率影响蚀刻相应材料的相对速率。 通过脉冲激励波形，重复地产生场的去激励间隔，其中在这些间隔中的任何一个期间，每个离子蚀刻剂的浓度都有衰减。 每种蚀刻剂的衰减速率和所得的寿命都不同。 因此，通过调节断电间隔的持续时间，可以改变相对于第二蚀刻剂的平均浓度的一个蚀刻剂的平均浓度以获得材料的选择性蚀刻。 通过紫外吸收光谱法连续监测蚀刻剂浓度，允许自动控制调制以实时获得所需的蚀刻选择性。