公开(公告)号：US08445383B2

公开(公告)日：2013-05-21

申请号：US12205652

申请日：2008-09-05

申请人： Karl D. Hobart ,  Tatyana I Feygelson ,  Marko J Tadjer ,  Joshua D. Caldwell ,  Kendrick X Liu ,  Francis J. Kub ,  Michael A Mastro ,  James E Butler

发明人： Karl D. Hobart ,  Tatyana I Feygelson ,  Marko J Tadjer ,  Joshua D. Caldwell ,  Kendrick X Liu ,  Francis J. Kub ,  Michael A Mastro ,  James E Butler

IPC分类号： H01L21/302

CPC分类号： H01S5/183 ,  H01L21/0495 ,  H01L29/6606 ,  H01S5/0425 ,  H01S5/32341

摘要： A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.

摘要翻译： 开发了NCD和4H-SiC薄膜之间的异质结。 未掺杂和B掺杂的NCD沉积在n-和p- SiC外延层上。 在p + NCD / n-SiC上的IV测量显示肖特基整流行为具有约0.2V的导通电压。电流增加超过8个数量级，在30℃下的理想因子为1.17。理想的能带图表示 从SiC导带到NCD膜的价带或受体水平的电子传输的可能传导机制。

公开(公告)号：US6157133A

公开(公告)日：2000-12-05

申请号：US90162

申请日：1998-06-04

申请人： Vasgen A. Shamamian ,  Daniel J. Vestyck, Jr. ,  John L. Giuliani, Jr. ,  James E. Butler

发明人： Vasgen A. Shamamian ,  Daniel J. Vestyck, Jr. ,  John L. Giuliani, Jr. ,  James E. Butler

IPC分类号： H01J61/18 ,  H01J65/04 ,  H01J17/20 ,  H01J11/00

CPC分类号： H01J61/18 ,  H01J65/042

摘要： A sealed, metal oxide, electrodeless discharge lamp having a high emissionntensity in the visible 400-700 nm range. Within the sealed container assembly of the lamp there is a source of metal atoms capable of forming a volatile oxide and a source of an oxygen containing gas. The lamp produces a plasma and volatilizes the metal into the plasma. Preferably the lamp is at a low pressure of about 20-40 torr and the metals are molybdenum or tungsten. Power is applied by inductively coupled electromagnetic radiation. A regenerative agent such as a halogen is added for recycling any deposited metal into the gas phase and to form a volatile compound with the source of metal atoms. The agent lowers the temperatures needed to volatilize the metal into the plasma. The lamp is operated by first providing energy at a low level to initiate the plasma and then supplying the metal atoms into the plasma.

摘要翻译： 一种密封的金属氧化物无电极放电灯，其可见光范围为400-700nm，发光强度高。 在灯的密封容器组件内，存在能够形成挥发性氧化物和含氧气体源的金属原子源。 灯产生等离子体并将金属挥发成等离子体。 优选地，灯处于约20-40托的低压，并且金属是钼或钨。 电感通过电感耦合电磁辐射施加。 加入诸如卤素的再生剂用于将任何沉积的金属再循环到气相中并与金属原子源形成挥发性化合物。 该试剂降低将金属挥发成等离子体所需的温度。 通过首先以低水平提供能量以启动等离子体，然后将金属原子供应到等离子体中来操作灯。

公开(公告)号：USD299462S

公开(公告)日：1989-01-17

申请号：US075322

申请日：1987-07-20

申请人： Jack J. Sullivan ,  Barry M. Haber ,  James E. Butler

设计人： Jack J. Sullivan ,  Barry M. Haber ,  James E. Butler

公开(公告)号：US06833027B2

公开(公告)日：2004-12-21

申请号：US10254809

申请日：2002-09-26

申请人： James E. Butler ,  Michael W. Geis ,  Donald D. Flechtner ,  Robert L. Wright

发明人： James E. Butler ,  Michael W. Geis ,  Donald D. Flechtner ,  Robert L. Wright

IPC分类号： C30B2904

CPC分类号： H01L21/0435 ,  C30B25/02 ,  C30B29/04 ,  H01L21/041 ,  H01L29/6603

摘要： A method of making a Schottky diode comprising the steps of: providing a single crystal diamond comprising a surface; placing the single crystal diamond in a CVD system; heating the diamond to a temperature of at least about 950° C.; providing a gas mixture capable of growing diamond film and comprising a sulfur compound through the CVD system; growing an epitaxial diamond film on the surface of the single crystal diamond; baking the diamond at a temperature of at least about 650° C. in air for a period of time that minimizes oxidation of the diamond; and fabricating a Schottky diode comprising the diamond film. A Schottky diode comprising an epitaxial diamond film and capable of blocking at least about 6 kV in a distance of no more than about 300 &mgr;m.

摘要翻译： 一种制造肖特基二极管的方法，包括以下步骤：提供包含表面的单晶金刚石; 将单晶金刚石置于CVD系统中; 将金刚石加热至至少约950℃的温度; 提供能够生长金刚石膜并通过CVD系统包含硫化合物的气体混合物; 在单晶金刚石的表面生长外延金刚石膜; 在至少约650℃的温度下在空气中烘烤金刚石使其最小化金刚石氧化的时间; 以及制造包含金刚石膜的肖特基二极管。 肖特基二极管包括外延金刚石膜，并且能够在不超过约300μm的距离内阻挡至少约6kV。

公开(公告)号：US5665430A

公开(公告)日：1997-09-09

申请号：US953908

申请日：1992-09-30

申请人： Kathleen Doverspike ,  James E. Butler

发明人： Kathleen Doverspike ,  James E. Butler

IPC分类号： C23C16/27 ,  C23C16/458 ,  C30B25/02 ,  C23C16/26

CPC分类号： C23C16/275 ,  C23C16/458 ,  C30B25/02 ,  C30B29/04

摘要： A method for the chemical vapor deposition of diamond includes the steps of:(a) applying a thermally conductive paint between a substrate seed crystal and an end surface of a vacuum line [having an inner surface and an outer surface], the vacuum line protruding through a mount;(b) holding within a chemical vapor deposition flame the substrate seed crystal upon the mount by applying a vacuum to the substrate seed crystal via the vacuum line protruding through the mount, wherein a portion of an outer surface of the vacuum line in contact with the mount is coated with a thermally conductive lubricant;(c) flowing a heat exchanging fluid through the mount to maintain the surface of the substrate seed crystal at a temperature suitable for chemical vapor deposition of diamond; and(d) directing a deposition species for chemical vapor deposition to deposit diamond onto a surface of the substrate seed crystal.

摘要翻译： 用于金刚石化学气相沉积的方法包括以下步骤：（a）在衬底晶种和真空线[具有内表面和外表面]的端面之间施加导热涂料，真空管线突出 穿过山 （b）通过经由所述安装件突出的所述真空管线向所述基板籽晶施加真空，将所述基板晶种保持在化学气相沉积火焰中，所述真空管线的外表面的一部分与所述基板籽晶接触， 安装件涂有导热润滑剂; （c）使热交换流体流过所述安装座，以将所述基底晶种的表面保持在适于金刚石化学气相沉积的温度; 和（d）引导用于化学气相沉积的沉积物质将金刚石沉积到基底晶种的表面上。

公开(公告)号：US4667142A

公开(公告)日：1987-05-19

申请号：US774035

申请日：1985-09-09

申请人： James E. Butler

发明人： James E. Butler

IPC分类号： H02J7/35 ,  H02J7/00

CPC分类号： H02J7/35 ,  Y10S136/293 ,  Y10S320/11 ,  Y10T307/527

摘要： A three-way power source circuit for portable electronic equipment, such as a radio, is disclosed. The power source circuit comprises a solar energy cell, a rechargeable battery and a standard nonrechargeable dry cell. A transistor couples the solar cell and rechargeable battery to a common point of the circuit, and a second transistor couples a standard dry cell to the common point. The common point provides one of the power output lines to the portable electronic equipment. The solar cell, rechargeable battery and standard dry cell return lines are coupled to a further common point which serves as the return line for power supplied to the portable electronic equipment. Switches are provided for eliminating the flow of current to the portable electronic equipment. The three-way power source circuit allows the solar cell to recharge the rechargeable cell when sufficient light is present. When insufficient light is present, the standard dry cell or the rechargeable battery, if it is sufficiently charged, provide power for the portable electronic equipment. If the standard dry cell is depleted, then the rechargeable cell/or the solar cell provide the primary power for the portable electronic equipment.

摘要翻译： 公开了一种用于诸如无线电的便携式电子设备的三向电源电路。 电源电路包括太阳能电池，可再充电电池和标准不可充电干电池。 晶体管将太阳能电池和可充电电池耦合到电路的公共点，并且第二晶体管将标准干电池耦合到公共点。 通用点为便携式电子设备提供一条电力输出线。 太阳能电池，可充电电池和标准干电池返回线耦合到另一个公共点，其作为用于提供给便携式电子设备的功率的返回线。 开关用于消除电流流向便携式电子设备。 三路电源电路允许太阳能电池在存在足够的光时对可再充电电池充电。 当存在不足的光时，如果标准干电池或可再充电电池充足电，则为便携式电子设备提供电力。 如果标准干电池耗尽，则可再充电电池/或太阳能电池为便携式电子设备提供主要电源。

公开(公告)号：USD294940S

公开(公告)日：1988-03-29

申请号：US766176

申请日：1985-08-16

申请人： Wilbert C. Brown ,  James E. Butler ,  John Cuccio

设计人： Wilbert C. Brown ,  James E. Butler ,  John Cuccio