公开(公告)号：US5665430A

公开(公告)日：1997-09-09

申请号：US953908

申请日：1992-09-30

申请人： Kathleen Doverspike ,  James E. Butler

发明人： Kathleen Doverspike ,  James E. Butler

IPC分类号： C23C16/27 ,  C23C16/458 ,  C30B25/02 ,  C23C16/26

CPC分类号： C23C16/275 ,  C23C16/458 ,  C30B25/02 ,  C30B29/04

摘要： A method for the chemical vapor deposition of diamond includes the steps of:(a) applying a thermally conductive paint between a substrate seed crystal and an end surface of a vacuum line [having an inner surface and an outer surface], the vacuum line protruding through a mount;(b) holding within a chemical vapor deposition flame the substrate seed crystal upon the mount by applying a vacuum to the substrate seed crystal via the vacuum line protruding through the mount, wherein a portion of an outer surface of the vacuum line in contact with the mount is coated with a thermally conductive lubricant;(c) flowing a heat exchanging fluid through the mount to maintain the surface of the substrate seed crystal at a temperature suitable for chemical vapor deposition of diamond; and(d) directing a deposition species for chemical vapor deposition to deposit diamond onto a surface of the substrate seed crystal.

摘要翻译： 用于金刚石化学气相沉积的方法包括以下步骤：（a）在衬底晶种和真空线[具有内表面和外表面]的端面之间施加导热涂料，真空管线突出 穿过山 （b）通过经由所述安装件突出的所述真空管线向所述基板籽晶施加真空，将所述基板晶种保持在化学气相沉积火焰中，所述真空管线的外表面的一部分与所述基板籽晶接触， 安装件涂有导热润滑剂; （c）使热交换流体流过所述安装座，以将所述基底晶种的表面保持在适于金刚石化学气相沉积的温度; 和（d）引导用于化学气相沉积的沉积物质将金刚石沉积到基底晶种的表面上。

公开(公告)号：US20050045895A1

公开(公告)日：2005-03-03

申请号：US10963666

申请日：2004-10-13

申请人： David Emerson ,  James Ibbetson ,  Michael Bergmann ,  Kathleen Doverspike ,  Michael O'Loughlin ,  Howard Nordby ,  Amber Abare

发明人： David Emerson ,  James Ibbetson ,  Michael Bergmann ,  Kathleen Doverspike ,  Michael O'Loughlin ,  Howard Nordby ,  Amber Abare

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X

摘要翻译： 在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。 有源区具有至少一个量子阱结构。 量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。 提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。 量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。 还提供了一种III族氮化物基半导体器件，其包括具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期的氮化镓基超晶格，其中0 <= X <1且0 <= Y <1，X 不等于Y.半导体器件可以是具有基于III族氮化物的有源区的发光二极管。 有源区可以是多量子阱有源区。

公开(公告)号：US20070210318A1

公开(公告)日：2007-09-13

申请号：US11627399

申请日：2007-01-26

申请人： John Edmond ,  Kathleen Doverspike ,  Michael Bergmann ,  Hua-Shuang Kong

发明人： John Edmond ,  Kathleen Doverspike ,  Michael Bergmann ,  Hua-Shuang Kong

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L33/0004 ,  H01L33/04

摘要： An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.

摘要翻译： 电子器件包括导电n型衬底，III族氮化物有源区，与衬底和有源层垂直的n型III族氮化物层，至少一个p型层，以及用于提供 在p型层和n型层或衬底之间的非整流导电路径。 非整流传导装置可以包括简并结结构或图案化的金属层。

公开(公告)号：US20070114541A1

公开(公告)日：2007-05-24

申请号：US11625377

申请日：2007-01-22

申请人： John Edmond ,  Kathleen Doverspike ,  Michael Bergmann ,  Hua-Shuang Kong

发明人： John Edmond ,  Kathleen Doverspike ,  Michael Bergmann ,  Hua-Shuang Kong

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L33/0004 ,  H01L33/04

摘要： An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.

摘要翻译： 电子器件包括导电n型衬底，III族氮化物有源区，与衬底和有源层垂直的n型III族氮化物层，至少一个p型层，以及用于提供 在p型层和n型层或衬底之间的非整流导电路径。 非整流传导装置可以包括简并结结构或图案化的金属层。

公开(公告)号：US20080038858A1

公开(公告)日：2008-02-14

申请号：US11875353

申请日：2007-10-19

申请人： David Emerson ,  James Ibbetson ,  Michael Bergmann ,  Kathleen Doverspike ,  Michael O'Loughlin ,  Howard Nordby ,  Amber Abare

发明人： David Emerson ,  James Ibbetson ,  Michael Bergmann ,  Kathleen Doverspike ,  Michael O'Loughlin ,  Howard Nordby ,  Amber Abare

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well stricture. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X

摘要翻译： 在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。 有源区具有至少一个量子阱狭窄。 量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。 提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。 量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。 还提供了一种III族氮化物基半导体器件，其包括具有至少两个交替层的In 1 N 1 Ga 1-X N和In 1 N的纳米氮基超晶格， SUB> Y 1-Y N，其中0 <= X <1且0 <= Y <1，X不等于Y.该半导体器件可以是发光 二极管与III族氮化物基活性区。 有源区可以是多量子阱有源区。

公开(公告)号：US20060233211A1

公开(公告)日：2006-10-19

申请号：US11419523

申请日：2006-05-22

申请人： John Edmond ,  Kathleen Doverspike ,  Hua-shuang Kong ,  Michael Bergmann

发明人： John Edmond ,  Kathleen Doverspike ,  Hua-shuang Kong ,  Michael Bergmann

IPC分类号： H01S5/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/32341

摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.

摘要翻译： 本发明是一种能够在电磁光谱的红色至紫外部分发射的发光器件的半导体结构。 半导体结构包括位于第一n型III族氮化物覆层和第二n型III族氮化物覆层之间的III族氮化物有源层，第一和第n型包层的各个带隙大于 有源层的带隙。 半导体结构还包括位于半导体结构中的p型III族氮化物层，使得第二n型覆层位于p型层和有源层之间。

公开(公告)号：US20050040426A1

公开(公告)日：2005-02-24

申请号：US10948363

申请日：2004-09-23

申请人： John Edmond ,  Kathleen Doverspike ,  Hua-shuang Kong ,  Michael Bergmann

发明人： John Edmond ,  Kathleen Doverspike ,  Hua-shuang Kong ,  Michael Bergmann

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L29/15 ,  H01L31/0312

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/32341

摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer. The semiconductor structure is built upon a silicon carbide substrate.

摘要翻译： 本发明是一种能够在电磁光谱的红色至紫外部分发射的发光器件的半导体结构。 半导体结构包括位于第一n型III族氮化物覆层和第二n型III族氮化物覆层之间的III族氮化物有源层，第一和第n型包层的各个带隙大于 有源层的带隙。 半导体结构还包括位于半导体结构中的p型III族氮化物层，使得第二n型覆层位于p型层和有源层之间。 半导体结构构建在碳化硅衬底上。