Metalized film for constructing capacitors and a process for
manufacturing said capacitors
    3.
    发明授权
    Metalized film for constructing capacitors and a process for manufacturing said capacitors 失效
    用于构造电容器的金属化膜和用于制造所述电容器的工艺

    公开(公告)号:US4615088A

    公开(公告)日:1986-10-07

    申请号:US624030

    申请日:1984-06-25

    IPC分类号: H01G4/18 H01G4/20 H01G7/00

    摘要: A metalized film for constructing capacitors formed from a flexible dielectric support medium comprising on at least one of its faces metalized parallel strips partially covered by lacquer strips parallel to the preceding ones, two successive metalized strips being partially covered by a lacquer strip whereas two successive lacquer strips partially cover the same metalized strip.

    摘要翻译: 一种用于构建由柔性电介质支撑介质形成的电容器的金属化膜,其包括在其至少一个表面上的金属化的平行条带,其部分被平行于之前的漆条覆盖,两个连续的金属化条被部分被漆条覆盖,而两个连续的漆 条带部分地覆盖相同的金属带。

    Photomasking composition, process for preparing same and mask obtained
    5.
    发明授权
    Photomasking composition, process for preparing same and mask obtained 失效
    光掩模组合物,制备方法及掩模

    公开(公告)号:US4268590A

    公开(公告)日:1981-05-19

    申请号:US127745

    申请日:1980-03-06

    IPC分类号: G03F7/039 G03C1/68

    CPC分类号: G03F7/039

    摘要: The invention relates to resins used for manufacturing or reproducing masks in electronics.The photomasking composition corresponds to the general formula: ##STR1## in which R.sub.1, R.sub.1 ', R.sub.1 ", R.sub.2, R.sub.2 ', R.sub.2 " designate alkyl radicals whose principal chain contains from 1 to 10 carbon atoms, the symbols F, Cl and Br which designate the fluorine, chlorine and the bromine bearing indices a, b, c, a', b', and c' representing the number of these atoms which are zero or positive whole numbers, such as m, n, p.

    摘要翻译: 本发明涉及用于在电子设备中制造或再现掩模的树脂。 光掩模组合物对应于通式:其中R1,R1',R1“,R2,R2',R2”表示其主链含有1至10个碳原子的烷基,符号F,Cl 和Br,它们表示表示这些原子数为零或正整数(如m,n,p)的氟,氯和溴承载指数a,b,c,a',b'和c'。

    Mesomorphic polymer material usable in non linear optics
    6.
    发明授权
    Mesomorphic polymer material usable in non linear optics 失效
    可用于非线性光学的介晶聚合物材料

    公开(公告)号:US4894263A

    公开(公告)日:1990-01-16

    申请号:US265337

    申请日:1988-10-24

    摘要: The invention relates to polymeric materials usable in non linear optics. The structure of the material of the invention includes a skeleton to which side chains are attached, the material resulting from the association of a first and a second monomer, the first monomer including a mesomorphogenic group connected to the skeleton by a spacer, the second monomer including a group capable of generating the second harmonic of an electromagnetic wave and also being connected to the skeleton by a spacer.

    摘要翻译: 本发明涉及可用于非线性光学器件的聚合材料。 本发明的材料的结构包括附着有侧链的骨架,由第一和第二单体缔合产生的材料,第一单体包括通过间隔基与骨架连接的介孔形成基团,第二单体 包括能够产生电磁波的二次谐波并且还通过间隔物连接到骨架的组。

    Electrochemical device which can be used for energy storage
    7.
    发明授权
    Electrochemical device which can be used for energy storage 失效
    可用于储能的电化学装置

    公开(公告)号:US4543306A

    公开(公告)日:1985-09-24

    申请号:US499788

    申请日:1983-05-31

    摘要: The invention relates to electrochemical devices and in particular energy storage devices.The object of the invention is the use in such devices of at least one conductive support, covered by a polymer film, obtained by electrochemical polymerization of at least one monomer having at least one aromatic heterocycle with five links containing a single heteroatom, the polymer being in accordance with the general formula: (M.sup.+ X.sup.- y)n. The basic monomer is a pyrrole, thiophene, furan or indole and is substituted by at least one group of the alkyl, alkoxyl, hydroxyl aryl, substituted aryl, halogen, methyl trihalide, cyano, amino or dialkylamino type.

    摘要翻译: 本发明涉及电化学装置,特别是储能装置。 本发明的目的是在这种装置中使用由聚合物膜覆盖的至少一种导电载体,其通过电化学聚合至少一种具有至少一个含有单个杂原子的五个连接基团的芳族杂环的单体获得,该聚合物为 按照通式:(M + Xy)n。 碱性单体是吡咯,噻吩,呋喃或吲哚,并且被至少一个烷基,烷氧基,羟基芳基,取代的芳基,卤素,三卤代甲基,氰基,氨基或二烷基氨基类取代。

    Infrared detector based on pyroelectric material
    9.
    发明授权
    Infrared detector based on pyroelectric material 失效
    基于光电材料的红外探测器

    公开(公告)号:US5087816A

    公开(公告)日:1992-02-11

    申请号:US537699

    申请日:1990-06-14

    CPC分类号: H01L37/02 G01J5/34

    摘要: An infrared detector based on pyroelectric material, of the type associated with a reading circuit prepared on a semiconductor substrate, the substrate also supporting conductive blocks designed to transmit the electrical signals generated by the pyroelectric material towards the reading circuit. Each conductive block corresponds to a picture element or pixel, wherein the detector is formed by a layer of pyroelectric material deposited on that side of the semiconductor layer having the conductive blocks. The pyroelectric material has a thermal conductivity of K

    摘要翻译: 基于与在半导体衬底上制备的读取电路相关联的类型的热电材料的红外检测器,该衬底还支持设计用于将热电材料产生的电信号传送到读取电路的导电块。 每个导电块对应于图像元素或像素,其中检测器由沉积在具有导电块的半导体层的该侧上的热电材料层形成。 热电材料的热导率为K <1W / m。 DEG K.在对向导电块的一侧覆盖热释电材料层的对电极。

    High stability conductive polyacetylene material and process for the
production thereof
    10.
    发明授权
    High stability conductive polyacetylene material and process for the production thereof 失效
    高稳定性导电聚乙炔材料及其制备方法

    公开(公告)号:US4481132A

    公开(公告)日:1984-11-06

    申请号:US395294

    申请日:1982-07-06

    摘要: The invention relates to a doped polyacetylene film for forming an organic semiconductor or even a conductor of a metallic type. It serves to make the doping more homogeneous and improves the stability over a period of time. The process consists of using as the dopant a salt of an element such as chrome, nickel, iron, titanium, tungsten, or molybdenum belonging to the transition metals, or a salt of an element such as europium or ytterbium belonging to the lanthanides. Doping takes place by immersing the film in a solution having a low dopant concentration, e.g. in toluene, and maintaining the system at low pressure and ordinary temperature for a period of a few days, as a function of the desired doping level and conductivity.

    摘要翻译: 本发明涉及用于形成有机半导体或甚至金属型导体的掺杂聚乙炔膜。 它用于使掺杂更均匀,并且在一段时间内提高了稳定性。 该方法包括使用属于过渡金属的诸如铬,镍,铁,钛,钨或钼的元素的盐作为掺杂剂,或者属于镧系元素的元素如铕或镱的盐。 通过将膜浸入低掺杂剂浓度的溶液中来进行掺杂。 在甲苯中,并将系统保持在低压和常温下几天的时间,作为所需掺杂浓度和电导率的函数。