公开(公告)号：US5079192A

公开(公告)日：1992-01-07

申请号：US573515

申请日：1990-08-24

Applicant: John H. Tregilgas ,  Dipankar Chandra

Inventor： John H. Tregilgas ,  Dipankar Chandra

IPC: H01L21/477

CPC classification number: H01L21/477 ,  Y10S148/064

Abstract: The disclosure relates to a method of forming samples of alloys of group II-VI compositions having minimum dislocations, comprising the steps of providing a sample of a group II-VI compound, providing an enclosed ampoule having the sample at one end portion thereof and a group II element of the compound at an end portion remote from the one end portion, heating the sample to a temperature in the range of 350 to the melting temperature of the compound for about one hour while maintaining the group II element at a temperature more than 200.degree. C. below the sample temperature, heating the group II element to a temperature from about 5.degree. to about 50.degree. C. below the temperature of the sample while maintaining the sample at a temperature in the range of 350.degree. to 650.degree. C. both of about 15 minutes to about 4 hours, and then stoichiometrically annealing the sample at a temperature below 325.degree. C.

Abstract translation: 本公开涉及一种形成具有最小位错的II-VI族组合物的合金样品的方法，包括提供II-VI族化合物样品的步骤，提供在其一个端部具有样品的封闭的安瓿和 在远离一个端部的端部处的化合物的II族元素，将样品加热至化合物的熔融温度350℃至约1小时的温度，同时保持II族元素的温度高于 低于样品温度200℃，将II族元件加热到低于样品温度约5℃至约50℃的温度，同时将样品保持在350至650℃的温度 约15分钟至约4小时，然后在低于325℃的温度下化学计量地退火样品。

公开(公告)号：US6091127A

公开(公告)日：2000-07-18

申请号：US831815

申请日：1997-04-02

Applicant: Dipankar Chandra ,  Donald F. Weirauch ,  Thomas C. Penn

Inventor： Dipankar Chandra ,  Donald F. Weirauch ,  Thomas C. Penn

IPC: H01L27/144 ,  H01L31/103 ,  H01L29/225 ,  H01L31/0296 ,  H01L31/0336 ,  H01L31/105

CPC classification number: H01L31/1032 ,  H01L27/1443

Abstract: This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial lattice-match layer (e.g. ZnSe 114) on a top surface of the circuit; c) an epitaxial insulating layer (e.g. CdTe 102) on the lattice-match layer; and d) at least two epitaxial HgCdTe sensors 101,121 on the insulating layer, with the HgCdTe sensors being electrically connected to the circuitry. Preferably, the circuitry is silicon. Preferably, an IR transparent, spacer layer (e.g. CdTe 120 or CdZnTe) is on the HgCdTe sensors and an HgCdTe filter 122 is on the spacer layer. Preferably, at least one of the HgCdTe sensors and the HgCdTe filter is laterally continuously graded.

Abstract translation: 这是一个集成的IR检测器系统，在集成硅或GaAs电路上具有至少两个外延HgCdTe传感器，也是制造这种系统的方法。 该系统可以包括：a）集成硅或GaAs电路110; b）在电路的顶表面上的外延晶格匹配层（例如ZnSe 114）; c）在晶格匹配层上的外延绝缘层（例如CdTe 102）; 和d）绝缘层上的至少两个外延HgCdTe传感器101,121，其中HgCdTe传感器电连接到电路。 优选地，电路是硅。 优选地，IR透明隔离层（例如CdTe 120或CdZnTe）位于HgCdTe传感器上，并且HgCdTe过滤器122位于间隔层上。 优选地，HgCdTe传感器和HgCdTe过滤器中的至少一个横向连续分级。

公开(公告)号：US5861626A

公开(公告)日：1999-01-19

申请号：US831170

申请日：1997-04-02

Applicant: Dipankar Chandra ,  Donald F. Weirauch ,  Thomas C. Penn

Inventor： Dipankar Chandra ,  Donald F. Weirauch ,  Thomas C. Penn

IPC: H01L21/304 ,  H01L27/14 ,  H01L31/18

CPC classification number: H01L27/14649 ,  G01J3/0256 ,  G01J3/26 ,  G01J3/2803 ,  H01L21/02381 ,  H01L21/02411 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02625 ,  H01L21/02639 ,  H01L27/144 ,  H01L31/02164 ,  H01L31/095

Abstract: A multiple film integrated infrared (IR) detector assembly 85 consists of detector films 86, 88, 90 having different IR spectral sensitivities which are deposited on a breadboard IR transmissive but electrically insulating substrate 42. Substrate 42 is deposited on an IR filter layer comprising an HgCdTe film 70. By various techniques described, filter film 70 has a varying composition from edge 68 to 72. This compositional gradient of film 70 results in varying IR spectral absorption as shown by IR transmission graphs 10, 12, 14. Film 70 acts as a graded IR filter in concert with the response of the detector films 86, 88, 90. By the proper choice of the compositional gradients in these films, and as a result the IR spectral response, an integrated IR spectrometer may be fabricated whereby each detector 86, 87, 90 detects only specific narrow bands of IR wavelengths.

Abstract translation: 多重膜集成红外（IR）检测器组件85由检测器膜86,88,90组成，其具有不同的IR光谱灵敏度，其被沉积在面包板IR透射但电绝缘基底42上。基底42沉积在包括 HgCdTe膜70.通过所描述的各种技术，过滤膜70具有从边缘68至72变化的组成。膜70的组成梯度导致红外光谱吸收变化，如IR透射图10,12,14所示。膜70作为 与检测器膜86,88,90的响应一致的分级红外滤光器。通过适当选择这些膜中的组成梯度，结果可以制造IR光谱响应，可以制造集成的IR光谱仪，由此每个检测器 86,87,90仅检测特定的IR波长的窄带。

公开(公告)号：US06866819B1

公开(公告)日：2005-03-15

申请号：US10006891

申请日：2001-11-13

Applicant: Dipankar Chandra ,  Athanasios J. Syllaios

Inventor： Dipankar Chandra ,  Athanasios J. Syllaios

IPC: G01N27/12 ,  G01N33/00 ,  G01N21/00 ,  G01N15/06 ,  G01N31/22 ,  G01N33/48

CPC classification number: G01N27/12 ,  G01N33/0047 ,  Y10T436/11

Abstract: A sensor for detecting a target matter includes a chemical sensitive layer that is operable to react when exposed to the target matter and a piezoresistive material coupled to the chemical sensitive layer. The chemical sensitive layer is configured such that the reaction of the target matter with the chemical sensitive layer creates an interfacial tension at the interface of the chemical sensitive layer and the piezoresistive material that changes the electrical resistance of the piezoresistive material. However, the chemical sensitive layer is configured such that the reaction of the target matter with the chemical sensitive layer does not affect the bulk properties of the chemical sensitive layer enough to change the electrical resistance of the piezoresistive material. The sensor also includes an electrical circuit coupled to the piezoresistive material that is operable to detect the change in the electrical resistance of the piezoresistive material due to the interfacial tension.

Abstract translation: 用于检测目标物质的传感器包括可暴露于目标物质时反应的化学敏感层和耦合到化学敏感层的压阻材料。 化学敏感层被配置成使得目标物质与化学敏感层的反应在化学敏感层的界面和压阻材料的界面处产生改变压阻材料的电阻的界面张力。 然而，化学敏感层被配置成使得目标物质与化学敏感层的反应不影响化学敏感层的本体特性，足以改变压阻材料的电阻。 传感器还包括耦合到压阻材料的电路，其可操作以检测由于界面张力导致的压阻材料的电阻的变化。

公开(公告)号：US6140145A

公开(公告)日：2000-10-31

申请号：US291680

申请日：1999-04-13

Applicant: Dipankar Chandra ,  Donald F. Weirauch ,  Thomas C. Penn

Inventor： Dipankar Chandra ,  Donald F. Weirauch ,  Thomas C. Penn

IPC: H01L27/144 ,  H01L31/103 ,  H01L21/00

CPC classification number: H01L31/1032 ,  H01L27/1443

Abstract: This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial lattice-match layer (e.g. ZnSe 114) on a top surface of the circuit; c) an epitaxial insulating layer (e.g. CdTe 102) on the lattice-match layer; and d) at least two epitaxial HgCdTe sensors 101,121 on the insulating layer, with the HgCdTe sensors being electrically connected to the circuitry. Preferably, the circuitry is silicon. Preferably, an IR transparent, spacer layer (e.g. CdTe 120 or CdZnTe) is on the HgCdTe sensors and an HgCdTe filter 122 is on the spacer layer. Preferably, at least one of the HgCdTe sensors and the HgCdTe filter is laterally continuously graded.

公开(公告)号：US6036770A

公开(公告)日：2000-03-14

申请号：US831813

申请日：1997-04-02

Applicant: Dipankar Chandra ,  Donald F. Weirauch ,  Thomas C. Penn

Inventor： Dipankar Chandra ,  Donald F. Weirauch ,  Thomas C. Penn

IPC: C30B19/02 ,  C30B19/04 ,  C30B33/02

CPC classification number: C30B19/02 ,  C30B19/04 ,  C30B29/48

Abstract: Methods are described for the depositing of a plurality of films, preferably mercury cadmium telluride (HgCdTe), whose compositions vary in a controlled manner to provide unique infrared spectral absorption and detection properties. HgCdTe films 64 and 70 are deposited on opposite sides of electrically insulating, IR transmissive film 42. Initially these HgCdTe films may be of uniform composition laterally from 62 to 66 and 68 to 72. However the interdiffusion and segregation coefficients of Hg and Cd are different and vary differently with respect to temperature. By placing film 70 in contact with heater 9, a controlled lateral gradient in composition of the film may be effected because 44 is hotter than 45 and will produce higher Cd concentration at 68 than 72. Similarly 62 will be higher in Cd than 66, however, the gradient will be much less because 64 is cooler than 70. Through the use of a heater 60, the lateral compositional gradient of 64 may be varied with respect to film 70. The close tracking of the IR properties of 70 and 64 can provide useful and novel integrated IR devices such as multiple band spectrometers.

Abstract translation: 描述了沉积多个膜，优选汞碲化镉（HgCdTe）的方法，其组成以受控的方式变化以提供独特的红外光谱吸收和检测特性。 HgCdTe膜64和70沉积在电绝缘的IR透射膜42的相对侧上。最初，这些HgCdTe膜在62至66和68至72之间可以具有均匀的组成。然而Hg和Cd的相互扩散和偏析系数不同 并且相对于温度变化不同。 通过将膜70放置成与加热器9接触，可以实现膜的组成控制的横向梯度，因为44比45高，并且将在68比72产生更高的Cd浓度。类似地，62在Cd中将高于66，但是 ，因为64比70更冷，所以梯度将会更小。通过使用加热器60，64的侧向组成梯度可以相对于膜70而变化。70和64的IR特性的紧密跟踪可以提供 有用和新颖的集成IR设备，如多频带光谱仪。