公开(公告)号：US4504334A

公开(公告)日：1985-03-12

申请号：US564872

申请日：1983-12-23

申请人： Herbert F. Schaake ,  John H. Tregilgas ,  Jeffrey D. Beck

发明人： Herbert F. Schaake ,  John H. Tregilgas ,  Jeffrey D. Beck

IPC分类号： H01L21/477 ,  H01L21/324 ,  H01L21/385

CPC分类号： H01L21/477

摘要： The disclosure relates to a method for removing the unwanted impurities from an HgCdTe alloy which consists of the steps of depositing a thin film on the order of from about 1 to about 100 microns in thickness of tellurium onto the backside of a mercury cadmium telluride bar to insure the presence of a substantial amount of excess tellurium on the backside of the alloy bar and allow the gettering mechanism to work. A protective film to shield the tellurium film from mercury ambient atmosphere is then optionally placed over the tellurium film. The protective film can be formed of a silicon oxide such as SiO and is preferably in the range of about 1000 angstroms to 10 microns or more in thickness. The bar with the tellurium and protective film thereon is then annealed at a temperature of less than 450.degree. C., preferably about 280.degree. C., for a period of from about one day to about four weeks in a saturated mercury atmosphere to allow the impurities in the alloy to diffuse to the backside thereof and into the tellurium layer. The bulk of the impurities will travel into the tellurium layer within a matter of several days at the preferred temperature noted hereinabove. The tellurium layer and protective film are then removed such as by grinding, etching or other appropriate method to remove the impurities from the alloy bar.

摘要翻译： 本公开涉及一种从HgCdTe合金中除去不需要的杂质的方法，该方法包括以下步骤：将碲厚度约1至约100微米的薄膜沉积到碲化汞镉池的背面上， 确保在合金棒的背面存在大量过量的碲，并允许吸气机构工作。 然后任选地将碲膜从汞环境大气屏蔽的保护膜放置在碲膜上。 保护膜可以由诸如SiO的氧化硅形成，并且优选在约1000埃到10微米或更大的范围内。 然后将其上具有碲和保护膜的棒在饱和汞气氛中在小于450℃，优选约280℃的温度下退火约1天至约4周的时间，以使 合金中的杂质扩散到其背面并进入碲层。 在上述优选温度下，大部分杂质将在数天内进入碲层。 然后通过研磨，蚀刻或其它适当的方法除去碲层和保护膜以从合金棒中除去杂质。

公开(公告)号：US4481044A

公开(公告)日：1984-11-06

申请号：US591903

申请日：1984-03-21

申请人： Herbert F. Schaake ,  John H. Tregilgas

发明人： Herbert F. Schaake ,  John H. Tregilgas

IPC分类号： C22C1/00 ,  H01L21/477 ,  C21D1/74

CPC分类号： C22C1/007 ,  H01L21/477 ,  Y10S438/971

摘要： The dislocation density near the surface of Hg.sub.1-x Cd.sub.x Te alloys is substantially reduced by annealing the material at around 600.degree. C. in a mercury saturated ambient for periods of four hours or more, prior to post annealing at lower temperatures to control the metal vacancy concentration. This procedure allows dislocation reduction by climb, reduces the concentration of metal vacancies which can collapse to form dislocation loops or contribute to dislocation multiplication, and reduces tellurium precipitates which contribute to dislocation multiplication during subsequent post annealing.

摘要翻译： 在Hg1-xCdxTe合金表面附近的位错密度通过在大约600℃下在汞饱和环境中退火4小时或更长的时间，在较低温度下退火之后大大降低材料，以控制金属空位浓度 。 该步骤允许通过爬升减少位错，减少可能塌陷以形成位错环或有助于位错倍增的金属空位的浓度，并且减少在随后的后退火期间有助于位错倍增的碲沉淀物。

公开(公告)号：US4507160A

公开(公告)日：1985-03-26

申请号：US564871

申请日：1983-12-23

申请人： Jeffrey D. Beck ,  Herbert F. Schaake ,  John H. Tregilgas ,  Michael A. Kinch

发明人： Jeffrey D. Beck ,  Herbert F. Schaake ,  John H. Tregilgas ,  Michael A. Kinch

IPC分类号： H01L21/385 ,  H01L21/477 ,  H01L21/324

CPC分类号： H01L21/385 ,  H01L21/477

摘要： The disclosure relates to a method for reducing impurity concentration in mercury cadmium telluride alloys wherein impurities are attracted to a region saturated with second phase tellurium during annealing in a saturated mercury atmosphere where the second phase tellurium and the impurities attracted thereto can be removed by polishing, etching, grinding, or the like.

摘要翻译： 本公开涉及一种降低汞镉碲合金中的杂质浓度的方法，其中在饱和汞气氛中退火期间，杂质被吸引到饱和第二相碲的区域，其中第二相碲及其吸附的杂质可通过抛光除去， 蚀刻，研磨等。

公开(公告)号：US4501625A

公开(公告)日：1985-02-26

申请号：US564953

申请日：1983-12-23

申请人： John H. Tregilgas ,  Jeffrey D. Beck ,  Michael A. Kinch ,  Herbert F. Schaake

发明人： John H. Tregilgas ,  Jeffrey D. Beck ,  Michael A. Kinch ,  Herbert F. Schaake

IPC分类号： C30B33/00 ,  H01L21/324

CPC分类号： C30B33/00 ,  C30B29/48

摘要： The disclosure relates to a method for making extrinsically doped HgCdTe alloys containing Cu, Ag, or Au or other dopant impurity whereby the excess tellurium in the core is annihilated (stoichiometrically compensated by excess in-diffusing Hg) and the dopant impurities are then permitted to randomly move through the slab to provide for homogeneity thereof. A post-annealing step of much greater than normal temperature-time length than was provided in the prior art is used. A standard post-annealing step in a saturated mercury vapor atomosphere leaves second phase tellurium (and gettered impurities) at the center of the slab, and longer term post-annealing negates this situation by annihilating the second phase tellurium in the slab and thus permitting the impurities to randomly travel by solid state diffusion throughout the slab to ultimately be distributed therein in a homogeneous manner. The additional time required for the post-annealing step following the normal prior art post-annealing step varies based upon slice or slab thickness, the metal-Te stoichiometry, and second post-annealing step temperature and, in general, will be longer but in the same range as that used in the prior post-annealing stage. Following annihilation of the second phase tellurium from the core, the impurity is homogenized in the slab by further annealing for from about one hour to about 20 weeks at a temperature under 300.degree. C., preferably 280.degree. C., by solid state diffusion.

摘要翻译： 本公开内容涉及一种制备含Cu，Ag或Au或其他掺杂杂质的二次掺杂HgCdTe合金的方法，其中芯中的过量碲被消除（化学计量地通过过量扩散Hg补偿），然后允许掺杂剂杂质 随机移动通过平板以提供其均匀性。 使用比常规温度 - 时间长度远大于现有技术中提供的后退火步骤。 在饱和汞蒸汽大气层中的标准后退火步骤在板坯的中心留下第二相碲（和杂质），并且较长期的后退火通过湮灭板坯中的第二相碲来抵消这种情况，从而允许 通过整个板坯的固态扩散随机行进的杂质最终以均匀的方式分布在其中。 在常规现有技术的后退火步骤之后的后退火步骤所需的额外时间基于切片或板厚度，金属-Te化学计量和第二后退火步骤温度而变化，并且通常将更长，但是在 与先前的后退火阶段中使用的范围相同。 在从芯芯湮灭第二相碲后，通过固态扩散在300℃，优选280℃的温度下，通过进一步退火约1小时至约20周，在板坯中均匀化杂质。

公开(公告)号：US4684415A

公开(公告)日：1987-08-04

申请号：US789231

申请日：1985-10-18

申请人： John H. Tregilgas ,  Thomas L. Polgreen

发明人： John H. Tregilgas ,  Thomas L. Polgreen

IPC分类号： H01L21/388

CPC分类号： H01L21/388

摘要： Methods of doping Hg.sub.1-x Cd.sub.x Te (50) with fast diffusing dopants by immersion in a mercury reservoir (32) doped with the desired dopants are disclosed. Also, methods of core annihilation of Hg.sub.1-x Cd.sub.x Te slices or ingots by immersion in a heated mercury reservoir are disclosed. Preferred embodiments include dopants such as copper in a mercury reservoir (32) that is heated to 270.degree. C. for a Hg.sub.1-x Cd.sub.x Te slice, and a reservoir (32) that is heated to 150.degree. C. for a thin film of Hg.sub.1-x Cd.sub.xn Te on a CdTe substrate.

摘要翻译： 公开了通过浸渍在掺杂有所需掺杂剂的汞储存器（32）中来掺杂快速扩散掺杂剂的Hg1-xCdxTe（50）的方法。 此外，公开了通过浸入加热的汞储存器中的Hg1-xCdxTe切片或锭的核心湮灭的方法。 优选的实施方案包括对于Hg1-xCdxTe切片加热至270℃的汞储存器（32）中的诸如铜的掺杂剂，以及用于Hg1-xCdxTe薄层的加热至150℃的储存器（32） xCdxnTe在CdTe基板上。

公开(公告)号：US5079192A

公开(公告)日：1992-01-07

申请号：US573515

申请日：1990-08-24

申请人： John H. Tregilgas ,  Dipankar Chandra

发明人： John H. Tregilgas ,  Dipankar Chandra

IPC分类号： H01L21/477

CPC分类号： H01L21/477 ,  Y10S148/064

摘要： The disclosure relates to a method of forming samples of alloys of group II-VI compositions having minimum dislocations, comprising the steps of providing a sample of a group II-VI compound, providing an enclosed ampoule having the sample at one end portion thereof and a group II element of the compound at an end portion remote from the one end portion, heating the sample to a temperature in the range of 350 to the melting temperature of the compound for about one hour while maintaining the group II element at a temperature more than 200.degree. C. below the sample temperature, heating the group II element to a temperature from about 5.degree. to about 50.degree. C. below the temperature of the sample while maintaining the sample at a temperature in the range of 350.degree. to 650.degree. C. both of about 15 minutes to about 4 hours, and then stoichiometrically annealing the sample at a temperature below 325.degree. C.

摘要翻译： 本公开涉及一种形成具有最小位错的II-VI族组合物的合金样品的方法，包括提供II-VI族化合物样品的步骤，提供在其一个端部具有样品的封闭的安瓿和 在远离一个端部的端部处的化合物的II族元素，将样品加热至化合物的熔融温度350℃至约1小时的温度，同时保持II族元素的温度高于 低于样品温度200℃，将II族元件加热到低于样品温度约5℃至约50℃的温度，同时将样品保持在350至650℃的温度 约15分钟至约4小时，然后在低于325℃的温度下化学计量地退火样品。

公开(公告)号：US6143630A

公开(公告)日：2000-11-07

申请号：US255588

申请日：1994-06-09

申请人： John H. Tregilgas

发明人： John H. Tregilgas

IPC分类号： H01L21/46 ,  H01L21/477 ,  H01L21/322

CPC分类号： H01L21/46 ,  H01L21/477

摘要： A method of gettering impurities from substrates (304) such as CdTe and CdZnTe by formation of liquid droplets (306) of a lower melting point material such as Cd or Te on the substrate during an anneal. The droplets may form from the melting of a thin layer of the material which had been deposited on the substrate (304). A subsequent mechanical removal of the cooled and solidified droplets also removes the gettered impurities.

摘要翻译： 在退火期间，通过在基板上形成诸如Cd或Te的较低熔点的材料的液滴（306），从而从诸如CdTe和CdZnTe的基底（304）中除去杂质的方法。 液滴可以从沉积在基板（304）上的材料的薄层的熔化形成。 随后机械去除冷却和固化的液滴也能除去杂质。

公开(公告)号：US5804463A

公开(公告)日：1998-09-08

申请号：US777861

申请日：1996-12-31

申请人： John H. Tregilgas ,  Thomas W. Orent

发明人： John H. Tregilgas ,  Thomas W. Orent

IPC分类号： H01L31/18

CPC分类号： H01L31/1832

摘要： A P-type substrate for infrared photo diodes can be produced by the present invention. A CdZnTe substrate is utilized. A first layer of HgCdTe is formed by liquid phase epitaxy on the substrate. A CdTe passivation layer is formed over the HgCdTe. A ZnS layer is formed over the CdTe layer. A noble metal is introduced into either the CdTe or ZnS layers. During a subsequent baking of the composite, the noble metal diffuses throughout the composite and into the HgCdTe layer.

摘要翻译： 用于红外光电二极管的P型衬底可以通过本发明生产。 使用CdZnTe衬底。 HgCdTe的第一层通过液相外延在基板上形成。 在HgCdTe上形成CdTe钝化层。 在CdTe层上形成ZnS层。 将一种贵金属引入到CdTe或ZnS层中。 在复合材料的随后烘烤期间，贵金属在整个复合材料中扩散并进入HgCdTe层。

公开(公告)号：US5599733A

公开(公告)日：1997-02-04

申请号：US342530

申请日：1994-11-21

申请人： Chang-Feng Wan ,  John H. Tregilgas

发明人： Chang-Feng Wan ,  John H. Tregilgas

IPC分类号： H01L21/469 ,  H01L31/103 ,  H01L21/225

CPC分类号： H01L21/469 ,  H01L31/1032 ,  Y10S438/971

摘要： A hybrid focal plane array has p-n junction photodiodes formed in a substrate (10) of HgCdTe which is passivated by a cap layer (12) of Cd-rich CdTe. The active surface of the HgCdTe substrate is passivated by annealing at a temperature sufficient to support interdiffusion between the Cd-rich CdTe capping layer (12) and the HgCdTe substrate (10). Use of the CdTe capping layer (12) with a slight excess Cd maintains the surface of the HgCdTe substrate (10) in a metal-rich phase condition.

摘要翻译： 混合焦平面阵列具有形成在HgCdTe的衬底（10）中的p-n结光电二极管，其被富含Cd的CdTe的覆盖层（12）钝化。 通过在足以支持富Cd的CdTe覆盖层（12）和HgCdTe衬底（10）之间的相互扩散的温度下退火来钝化HgCdTe衬底的活性表面。 使用具有轻微过量Cd的CdTe覆盖层（12）将HgCdTe衬底（10）的表面维持在富金相的状态。

公开(公告)号：US4462959A

公开(公告)日：1984-07-31

申请号：US365135

申请日：1982-04-05

申请人： John H. Tregilgas

发明人： John H. Tregilgas

IPC分类号： H01L21/385 ,  H01L31/0296 ,  H01L31/18 ,  H01L3/20

CPC分类号： H01L31/1832 ,  H01L21/385 ,  H01L31/02966 ,  Y10S420/903 ,  Y10S438/925

摘要： Controllable doping of HgCdTe in concentrations low enough to be useful for electronic devices is accomplished by dissolving the desired dopant in mercury at or below the solubility limit. The mercury is then diluted with pure mercury, to lower the dopant concentration to that which will produce the desired impurity concentration in the end product. The doped mercury is then compounded according to conventional methods, to produce reproducibly doped HgCdTe of uniform composition.

摘要翻译： 通过将低于足以用于电子器件的浓度的HgCdTe的可控掺杂通过将所需的掺杂剂溶解在等于或低于溶解度极限的汞中来实现。 然后用纯汞稀释汞，以将掺杂剂浓度降低到在最终产物中产生所需杂质浓度的浓度。 然后根据常规方法将掺杂的汞复合，以产生均匀组成的可重复掺杂的HgCdTe。