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公开(公告)号：US06495709B1
公开(公告)日：2002-12-17
申请号：US09526786
申请日：2000-03-16
IPC分类号： C07F506
CPC分类号： C23C30/00 , C03C17/25 , C03C2217/214 , C03C2218/113 , C07C51/412 , C07C53/128
摘要： A precursor for forming an aluminum oxide film comprises a liquid solution of an aluminum organic precursor compound in an organic solvent. In a second embodiment, the precursor comprises a suspension of aluminum oxide powder in a solution of an aluminum organic precursor compound. A precursor according to the invention is deposited on a substrate by dipping, rolling, spraying, misted deposition, spin on deposition, or chemical vapor deposition then heated to fabricate transparent aluminum oxide films. The electronic properties of the aluminum oxide films may be improved by depositing a plurality of layers of the precursor and annealing the precursor between layers.
摘要翻译： 用于形成氧化铝膜的前体包括铝有机前体化合物在有机溶剂中的液体溶液。 在第二个实施方案中，前体包含氧化铝粉末在铝有机前体化合物的溶液中的悬浮液。 根据本发明的前体通过浸渍，轧制，喷涂，雾化沉积，沉积或化学气相沉积沉积在基底上，然后加热以制造透明氧化铝膜。 可以通过沉积多层前体并在层间退火前体来改善氧化铝膜的电子性能。
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公开(公告)号：US06174213B1
公开(公告)日：2001-01-16
申请号：US09388038
申请日：1999-09-01
申请人： Carlos A. Paz de Araujo , Jolanta Celinska , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan , Akihiro Matsuda , Gota Kano , Yoshio Yamaguchi , Tatsuo Morita , Hideo Nagai
发明人： Carlos A. Paz de Araujo , Jolanta Celinska , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan , Akihiro Matsuda , Gota Kano , Yoshio Yamaguchi , Tatsuo Morita , Hideo Nagai
IPC分类号： B05D722
CPC分类号： C03C17/3417 , C03C17/253 , C03C2217/21 , C03C2217/211 , C03C2217/24 , C03C2217/244 , C23C18/1216 , C23C18/1225 , C23C18/1275 , C23C18/1283 , C23C18/1291
摘要： Metal organic precursor compounds are dissolved in an organic solvent to form a nonaqueous liquid precursor. The liquid precursor is applied to the inner envelope surface of a fluorescent lamp and heated to form a metal oxide thin film layer. The metal oxide thin film layer may be a conductor, a protective layer or provide other functions. The films have a thickness of from 20 nm to 500 nm. A conductive layer comprising tin-antimony oxide with niobium dopant may be fabricated to have a differential resistivity profile by selecting a combination of precursor composition and annealing temperatures.
摘要翻译： 将金属有机前体化合物溶解在有机溶剂中以形成非水性液体前体。 将液体前体施加到荧光灯的内包络面上并加热形成金属氧化物薄膜层。 金属氧化物薄膜层可以是导体，保护层或提供其他功能。 膜的厚度为20nm至500nm。 可以通过选择前体组合物和退火温度的组合来制造包含具有铌掺杂剂的锡 - 锑氧化物的导电层以具有差分电阻率分布。
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3.发明授权Metal organic precursors for transparent metal oxide thin films and method of making same 失效透明金属氧化物薄膜的金属有机前体及其制备方法公开(公告)号：US06686489B2
公开(公告)日：2004-02-03
申请号：US10037877
申请日：2001-11-09
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
IPC分类号： C07F1900
CPC分类号： C07C53/126
摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.
摘要翻译： 用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。 在一个实施例中，液体前体用于制造导电薄膜。 在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。 液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。 此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。 含有多种金属的液体前体具有更长的保质期。 向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。 在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。 本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。
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4.发明授权Metal organic precursors for transparent metal oxide thin films and method of making same 失效透明金属氧化物薄膜的金属有机前体及其制备方法公开(公告)号：US06376691B1
公开(公告)日：2002-04-23
申请号：US09388044
申请日：1999-09-01
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
IPC分类号： C07F1900
CPC分类号： C07C53/126
摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.
摘要翻译： 用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。 在一个实施例中，液体前体用于制造导电薄膜。 在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。 液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。 此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。 含有多种金属的液体前体具有更长的保质期。 向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。 在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。 本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。
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公开(公告)号：US20080106925A1
公开(公告)日：2008-05-08
申请号：US11937461
申请日：2007-11-08
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a homogeneous material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.
摘要翻译： 一种非易失性电阻式开关存储器，其包括由于电子之间的相关性而导致的绝缘和导电状态之间的均匀材料，特别是通过Mott跃迁。 该材料结晶成导电状态，不需要电铸。
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公开(公告)号：US06815223B2
公开(公告)日：2004-11-09
申请号：US10302441
申请日：2002-11-22
申请人： Jolanta Celinska , Vikram Joshi , Narayan Solayappan , Myoungho Lim , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Vikram Joshi , Narayan Solayappan , Myoungho Lim , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01G706
摘要： A precursor for forming a thin film of layered superlattice material is applied to an integrated circuit substrate. The precursor coating is heated using rapid thermal processing (RTP) with a ramping rate of 100° C./second at a hold temperature in a range of from 500° C. to 900° C. for a cumulative heating time not exceeding 30 minutes, and preferably less than 5 minutes. In fabricating a ferroelectric memory cell, the coating is heated in oxygen using RTP, then a top electrode layer is formed, and then the substrate including the coating is heated using RTP in oxygen or in nonreactive gas after forming the top electrode layer. The thin film of layered superlattice material preferably comprises strontium bismuth tantalate or strontium bismuth tantalum niobate, and preferably has a thickness in a range of from 25 nm to 120 nm. The process of fabricating a thin film of layered superlattice material typically has a thermal budget value not exceeding 960,000° C.-sec, preferably less than 50,000° C.-sec.
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公开(公告)号：US20080106927A1
公开(公告)日：2008-05-08
申请号：US11937480
申请日：2007-11-08
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states. The material is stabilized against charge trapping by oxygen vacancies by an extrinsic ligand, such as carbon.
摘要翻译： 一种非易失性电阻式开关存储器，其包括在绝缘和导电状态之间变化的材料。 该材料通过外部配体如碳稳定，防止由氧空位的电荷捕获。
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公开(公告)号：US20080107801A1
公开(公告)日：2008-05-08
申请号：US11937481
申请日：2007-11-08
IPC分类号： B05D5/12
CPC分类号： H01L45/04 , G11C13/0002 , G11C2213/79 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A method of making a variable resistance material (VRM), the method comprising providing a precursor comprising a metallorganic or organometallic solvent containing a metal moiety suitable for forming the VRM, depositing the precursor on a substrate to form a thin film of the precursor, and heating the thin film to form the VRM. The preferred solvent comprises octane.
摘要翻译： 一种制备可变电阻材料（VRM）的方法，所述方法包括提供包含含有适于形成VRM的金属部分的金属有机或有机金属溶剂的前体，将前体沉积在基底上以形成前体的薄膜，以及 加热薄膜以形成VRM。 优选的溶剂包括辛烷。
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公开(公告)号：US20080106926A1
公开(公告)日：2008-05-08
申请号：US11937479
申请日：2007-11-08
CPC分类号： G11C13/003 , B82Y10/00 , G11C11/24 , G11C13/0007 , G11C2213/32 , G11C2213/53 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L29/685 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure.
摘要翻译： 一种集成电路存储单元，包括：具有第一有源区，第二有源区和在有源区之间的沟道的半导体; 以及在通道正上方的可变电阻材料层（VRM）。 在一个实施例中，在VRM和沟道之间存在第一导电层，以及VRM层正上方的第二导电层。 VRM优选为相关电子材料（CEM）。 存储单元包括FET，例如JFET或MESFET。 在另一个实施例中，在VRM和通道之间存在绝缘材料层。 在这种情况下，存储单元可以包括MOSFET结构。
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公开(公告)号：US06781184B2
公开(公告)日：2004-08-24
申请号：US09998469
申请日：2001-11-29
申请人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L27108
CPC分类号： H01L28/57 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.
摘要翻译： 集成电路中的氢扩散阻挡层位于集成电路中以抑制氢扩散到诸如铁电层状超晶格材料的金属氧化物的薄膜。 氢扩散阻挡层包括以下化合物中的至少一种：钽酸锶，钽酸铋，氧化钽，氧化钛，氧化锆和氧化铝。 氢阻挡层是无定形的，并且在450℃或更低的温度下通过MOCVD工艺制成。 在与所述氢扩散阻挡层相邻的地方形成包括选自氮化硅和所述氢阻挡层材料之一的结晶形式的材料的补充氢阻挡层。
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