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    METHOD FOR PREPARING CERIUM CARBONATE POWDER
    3.
    发明申请
    METHOD FOR PREPARING CERIUM CARBONATE POWDER 有权
    制备碳酸钙粉末的方法

    公开(公告)号：US20100148113A1

    公开(公告)日：2010-06-17

    申请号：US12531452

    申请日：2008-03-14

    申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

    发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

    IPC分类号： C01F17/00 ,  C09K13/00

    CPC分类号： C01F17/005 ,  C01P2002/72

    摘要： In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120° C. to 300° C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

    摘要翻译： 在通过将铈前体溶液与尿素溶液混合并进行沉淀反应制备碳酸铈粉末的方法中，其中所述碳酸铈粉末具有六方晶系结构，通过使用至少一种有机溶剂作为溶剂用于任一种 或铈前体溶液和尿素溶液两者，并将沉淀反应的温度调节在120℃至300℃的范围内。此外，该方法可以从碳酸铈粉末中得到碳酸铈粉末，氧化铈粉末， 和包括氧化铈粉末作为研磨剂的CMP浆料。 在该方法中，作为沉淀剂的尿素可以提高反应的均匀性，因此可以容易且廉价地获得六方晶系结构的碳酸铈粉末，而不会受到高温高压的危险，并且需要昂贵的 水热合成系统。

    Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same
    8.
    发明授权
    Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same 有权
    碳酸铈粉末，其制备方法，由其制成的氧化铈粉末，其制备方法以及包含其的CMP浆料

    公开(公告)号：US08361419B2

    公开(公告)日：2013-01-29

    申请号：US12591227

    申请日：2009-11-12

    申请人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

    发明人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

    IPC分类号： C01F17/00

    CPC分类号： C01F17/0043 ,  C01F17/005 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/80

    摘要： Disclosed is a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution to cause precipitation, wherein at least one solvent used in the cerium precursor solution and the carbonate precursor solution is an organic solvent. Cerium carbonate powder obtained from the method, cerium oxide powder obtained from the cerium carbonate powder, a method for preparing the cerium oxide powder, and CMP slurry comprising the cerium oxide powder are also disclosed. The method for preparing cerium carbonate using an organic solvent, allows the resultant cerium carbonate powder to have a size and shape controllable from the initial nucleation step. Additionally, it is possible to easily control the size and shape of cerium oxide powder obtained from the cerium carbonate powder.

    摘要翻译： 公开了一种通过将铈前体溶液与碳酸酯前体溶液混合以制备沉淀来制备碳酸铈粉末的方法，其中用于铈前体溶液和碳酸酯前体溶液中的至少一种溶剂是有机溶剂。 还公开了从该方法得到的碳酸铈粉末，由碳酸铈粉末得到的氧化铈粉末，氧化铈粉末的制备方法和含有氧化铈粉末的CMP浆料。 使用有机溶剂制备碳酸铈的方法允许所得的碳酸铈粉末具有从初始成核步骤可控的尺寸和形状。 此外，可以容易地控制由碳酸铈粉末获得的氧化铈粉末的尺寸和形状。

    CMP slurry and method for polishing semiconductor wafer using the same
    10.
    发明授权
    CMP slurry and method for polishing semiconductor wafer using the same 有权
    CMP浆料和使用其的抛光半导体晶片的方法

    公开(公告)号：US07736530B2

    公开(公告)日：2010-06-15

    申请号：US11657051

    申请日：2007-01-24

    申请人： Seung Beom Cho ,  Jong Pil Kim ,  Jun Seok Nho ,  Myoung Hwan Oh ,  Jang Yul Kim

    发明人： Seung Beom Cho ,  Jong Pil Kim ,  Jun Seok Nho ,  Myoung Hwan Oh ,  Jang Yul Kim

    IPC分类号： C09K13/04

    CPC分类号： C09G1/02 ,  H01L21/3212

    摘要： Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a semiconductor wafer using the CMP slurry. According to the disclosed invention, the agglomerated particle size of abrasive particles in the CMP slurry can be reduced, while the viscosity of the CMP slurry can be reduced and the global planarity of wafers upon polishing can be improved. Thus, the CMP slurry can be advantageously used in processes for manufacturing semiconductor devices requiring fine patterns and can improve the reliability and production of semiconductor devices through the use thereof in semiconductor processes.

    摘要翻译： 公开了一种CMP浆料，其中将包含重均分子量为30-500并含有羟基（OH），羧基（COOH）或二者）的化合物加入到包含磨料颗粒和水的CMP浆料中 并且具有第一粘度，使得CMP浆料被控制为具有比第一粘度低5-30％的第二粘度。 还公开了使用CMP浆料来研磨半导体晶片的方法。 根据所公开的发明，可以减少CMP浆料中的磨料颗粒的聚集粒度，同时可以减少CMP浆料的粘度，并且可以提高抛光时晶片的全局平面性。 因此，CMP浆料可以有利地用于制造需要精细图案的半导体器件的工艺中，并且可以通过其在半导体工艺中的使用来提高半导体器件的可靠性和生产。