公开(公告)号：US20100148113A1

公开(公告)日：2010-06-17

申请号：US12531452

申请日：2008-03-14

申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

IPC分类号： C01F17/00 ,  C09K13/00

CPC分类号： C01F17/005 ,  C01P2002/72

摘要： In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120° C. to 300° C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

摘要翻译： 在通过将铈前体溶液与尿素溶液混合并进行沉淀反应制备碳酸铈粉末的方法中，其中所述碳酸铈粉末具有六方晶系结构，通过使用至少一种有机溶剂作为溶剂用于任一种 或铈前体溶液和尿素溶液两者，并将沉淀反应的温度调节在120℃至300℃的范围内。此外，该方法可以从碳酸铈粉末中得到碳酸铈粉末，氧化铈粉末， 和包括氧化铈粉末作为研磨剂的CMP浆料。 在该方法中，作为沉淀剂的尿素可以提高反应的均匀性，因此可以容易且廉价地获得六方晶系结构的碳酸铈粉末，而不会受到高温高压的危险，并且需要昂贵的 水热合成系统。

公开(公告)号：US08303918B2

公开(公告)日：2012-11-06

申请号：US12531452

申请日：2008-03-14

申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim ,  Dong-Mok Shin

发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim ,  Dong-Mok Shin

IPC分类号： C01F17/00 ,  C09K3/14

CPC分类号： C01F17/005 ,  C01P2002/72

摘要： In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120° C. to 300° C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

摘要翻译： 在通过将铈前体溶液与尿素溶液混合并进行沉淀反应制备碳酸铈粉末的方法中，其中所述碳酸铈粉末具有六方晶系结构，通过使用至少一种有机溶剂作为溶剂用于任一种 或铈前体溶液和尿素溶液两者，并将沉淀反应的温度调节在120℃至300℃的范围内。此外，该方法可以从碳酸铈粉末中得到碳酸铈粉末，氧化铈粉末， 和包括氧化铈粉末作为研磨剂的CMP浆料。 在该方法中，作为沉淀剂的尿素可以提高反应的均匀性，因此可以容易且廉价地获得六方晶系结构的碳酸铈粉末，而不会受到高温高压的危险，并且需要昂贵的 水热合成系统。

公开(公告)号：US08173039B2

公开(公告)日：2012-05-08

申请号：US12312601

申请日：2007-11-20

申请人： Jun-Seok Nho ,  Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jong-Pil Kim ,  Jang-Yul Kim

发明人： Jun-Seok Nho ,  Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jong-Pil Kim ,  Jang-Yul Kim

IPC分类号： C09K13/00

CPC分类号： C09G1/02 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2004/03 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C09K3/1409 ,  H01L21/31053 ,  Y10T428/2982

摘要： Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of pure organic solvent containing no water is used as a solvent for the cerium precursor solution as well as the precipitant solution to thereby prepare the cerium oxide powder, the particle size of which is adjusted to 50 nm to 3 μm. Cerium oxide powder obtained from the method and CMP slurry comprising the cerium oxide powder as a polishing agent are also disclosed. The method makes it possible to prepare cerium oxide powder with an average particle size of 50 nm or greater and high crystallinity, which is difficult to prepare by the conventional wet precipitation process, by using an organic solvent as a solvent in a wet precipitation process, and the so-prepared cerium oxide powder can be used as a polishing agent for CMP slurry even without being subjected to separate heat treatment.

摘要翻译： 公开了一种通过以下步骤直接制备氧化铈粉末的方法：a）将铈前体溶液与沉淀剂溶液混合以引起反应; 和b）对反应溶液进行氧化处理，其中使用至少一种不含水的纯有机溶剂作为铈前体溶液的溶剂以及沉淀剂溶液，从而制备氧化铈粉末，其粒径 调整为50nm〜3μm。 还公开了由该方法获得的氧化铈粉末和包含氧化铈粉末作为抛光剂的CMP浆料。 该方法可以通过在湿沉淀法中使用有机溶剂作为溶剂来制备平均粒径为50nm以上的高结晶度的氧化铈粉末，这在常规的湿法沉淀法难以制备， 并且如此制备的氧化铈粉末即使不经过单独的热处理也可用作CMP浆料的抛光剂。

公开(公告)号：US07976810B2

公开(公告)日：2011-07-12

申请号：US12531450

申请日：2008-03-14

申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

IPC分类号： C01B31/24

CPC分类号： C01F17/0043 ,  C01F17/005 ,  C01P2002/72 ,  C01P2002/76 ,  C09K3/1409 ,  C09K3/1463

摘要： In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and carrying out a precipitation reaction, wherein cerium carbonate is controlled to have an orthorhombic crystal structure, a hexagonal crystal structure or an orthorhombic/hexagonal mixed crystal structure, by using at least one type of organic solvent comprising at least two hydroxyl groups (OH) in molecular formula as a solvent for either or both the cerium precursor solution and the carbonate precursor solution, and varying a number of carbons or hydroxyl groups (OH) included in the molecular formula of the organic solvent. The method can easily and inexpensively obtain cerium carbonate powder with a desired crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

摘要翻译： 在通过将铈前体溶液与碳酸酯前体溶液混合并进行沉淀反应制备碳酸铈粉末的方法中，其中将碳酸铈控制为具有正交晶体结构，六方晶系结构或正交/六方晶系混合晶体结构 通过使用包含分子式中的至少两个羟基（OH）的至少一种类型的有机溶剂作为铈前体溶液和碳酸酯前体溶液中的任一种或两者的溶剂，并且改变多个碳或羟基（OH ）包括在有机溶剂的分子式中。 该方法可以容易且廉价地获得具有所需晶体结构的碳酸铈粉末，而没有高温高压的危险和需要昂贵的水热合成系统。

公开(公告)号：US08333815B2

公开(公告)日：2012-12-18

申请号：US12598666

申请日：2008-04-30

申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

IPC分类号： B24D3/02 ,  C09C1/68 ,  C09K3/14 ,  H01L21/302 ,  H01L21/461

CPC分类号： C01F17/0043 ,  C01F17/005 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/10 ,  C01P2004/20 ,  C09K3/1454 ,  C09K3/1463

摘要： Disclosed are cerium oxide powder for an abrasive; CMP slurry including the same; and a shallow trench isolation (STI) process using the CMP slurry. At least two kinds of cerium oxides prepared by using cerium carbonates having different crystal structures are mixed in an appropriate ratio and used as an abrasive for CMP slurry, thereby adjusting required polishing properties of the CMP slurry. Also, in a disclosed method of preparing a cerium carbonate, the crystal structure of the cerium carbonate can be easily controlled. Based on the finding that in a cerium oxide for an abrasive, the kind of improved polishing property depends on the crystal structure of a cerium carbonate, at least one from among polishing properties, such as the polishing rate of a silicon oxide layer, the polishing rate of a silicon nitride layer, the polishing selectivity between the silicon oxide layer and the silicon nitride layer, and WIWNU, can be adjusted by using at least two kinds of cerium oxides selected from the group including (i) a cerium oxide prepared by using a lanthanite-(Ce) crystal structured cerium carbonate, (ii) a cerium oxide prepared by using an orthorhombic crystal structured cerium carbonate, and (iii) a cerium oxide prepared by using a hexagonal crystal structured cerium carbonate, as an abrasive for CMP slurry, and adjusting the mixing ratio of the cerium oxides.

摘要翻译： 公开了用于研磨剂的氧化铈粉末; 包括CMP的CMP浆料; 和使用CMP浆料的浅沟槽隔离（STI）工艺。 通过使用具有不同晶体结构的碳酸铈制备的至少两种氧化铈以适当的比例混合，并用作CMP浆料的研磨剂，从而调节CMP浆料的所需抛光性能。 此外，在公开的碳酸铈的制备方法中，可以容易地控制碳酸铈的晶体结构。 基于在研磨剂的氧化铈中发现，改善的研磨性能的种类取决于碳酸铈的晶体结构，从抛光性能，例如氧化硅层的研磨速度，抛光 氮化硅层的速率，氧化硅层和氮化硅层之间的抛光选择性以及WIWNU可以通过使用选自以下的至少两种氧化铈来调节：（i）通过使用制备的氧化铈 （Ce）晶体结构的碳酸铈，（ii）通过使用正交晶体结构的碳酸铈制备的氧化铈，和（iii）通过使用六方晶结晶的碳酸铈制备的氧化铈作为CMP浆料的研磨剂 ，并调节氧化铈的混合比。

公开(公告)号：US20100143233A1

公开(公告)日：2010-06-10

申请号：US12531450

申请日：2008-03-14

申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

IPC分类号： C01B31/24 ,  C01F17/00

CPC分类号： C01F17/0043 ,  C01F17/005 ,  C01P2002/72 ,  C01P2002/76 ,  C09K3/1409 ,  C09K3/1463

摘要： In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and carrying out a precipitation reaction, wherein cerium carbonate is controlled to have an orthorhombic crystal structure, a hexagonal crystal structure or an orthorhombic/hexagonal mixed crystal structure, by using at least one type of organic solvent comprising at least two hydroxyl groups (OH) in molecular formula as a solvent for either or both the cerium precursor solution and the carbonate precursor solution, and varying a number of carbons or hydroxyl groups (OH) included in the molecular formula of the organic solvent. The method can easily and inexpensively obtain cerium carbonate powder with a desired crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

摘要翻译： 在通过将铈前体溶液与碳酸酯前体溶液混合并进行沉淀反应制备碳酸铈粉末的方法中，其中将碳酸铈控制为具有正交晶体结构，六方晶系结构或正交/六方晶系混合晶体结构 通过使用包含分子式中的至少两个羟基（OH）的至少一种类型的有机溶剂作为铈前体溶液和碳酸酯前体溶液中的任一种或两者的溶剂，并且改变多个碳或羟基（OH ）包括在有机溶剂的分子式中。 该方法可以容易且廉价地获得具有所需晶体结构的碳酸铈粉末，而没有高温高压的危险和需要昂贵的水热合成系统。

公开(公告)号：US20100062687A1

公开(公告)日：2010-03-11

申请号：US12598666

申请日：2008-04-30

申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

IPC分类号： B24B7/20 ,  C09K3/14 ,  C01F17/00

CPC分类号： C01F17/0043 ,  C01F17/005 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/10 ,  C01P2004/20 ,  C09K3/1454 ,  C09K3/1463

摘要： Disclosed are cerium oxide powder for an abrasive; CMP slurry including the same; and a shallow trench isolation (STI) process using the CMP slurry. At least two kinds of cerium oxides prepared by using cerium carbonates having different crystal structures are mixed in an appropriate ratio and used as an abrasive for CMP slurry, thereby adjusting required polishing properties of the CMP slurry. Also, in a disclosed method of preparing a cerium carbonate, the crystal structure of the cerium carbonate can be easily controlled. Based on the finding that in a cerium oxide for an abrasive, the kind of improved polishing property depends on the crystal structure of a cerium carbonate, at least one from among polishing properties, such as the polishing rate of a silicon oxide layer, the polishing rate of a silicon nitride layer, the polishing selectivity between the silicon oxide layer and the silicon nitride layer, and WIWNU, can be adjusted by using at least two kinds of cerium oxides selected from the group including (i) a cerium oxide prepared by using a lanthanite-(Ce) crystal structured cerium carbonate, (ii) a cerium oxide prepared by using an orthorhombic crystal structured cerium carbonate, and (iii) a cerium oxide prepared by using a hexagonal crystal structured cerium carbonate, as an abrasive for CMP slurry, and adjusting the mixing ratio of the cerium oxides.

摘要翻译： 公开了用于研磨剂的氧化铈粉末; 包括CMP的CMP浆料; 和使用CMP浆料的浅沟槽隔离（STI）工艺。 通过使用具有不同晶体结构的碳酸铈制备的至少两种氧化铈以适当的比例混合，并用作CMP浆料的研磨剂，从而调节CMP浆料的所需抛光性能。 此外，在公开的碳酸铈的制备方法中，可以容易地控制碳酸铈的晶体结构。 基于在研磨剂的氧化铈中发现，改善的研磨性能的种类取决于碳酸铈的晶体结构，从抛光性能，例如氧化硅层的研磨速度，抛光 氮化硅层的速率，氧化硅层和氮化硅层之间的抛光选择性以及WIWNU可以通过使用选自以下的至少两种氧化铈来调节：（i）通过使用制备的氧化铈 （Ce）晶体结构的碳酸铈，（ii）通过使用正交晶体结构的碳酸铈制备的氧化铈，和（iii）通过使用六方晶结晶的碳酸铈制备的氧化铈作为CMP浆料的研磨剂 ，并调节氧化铈的混合比。

公开(公告)号：US20100044625A1

公开(公告)日：2010-02-25

申请号：US12312601

申请日：2007-11-20

申请人： Jun-Seok Nho ,  Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jong-Pil Kim ,  Jang-Yul Kim

发明人： Jun-Seok Nho ,  Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jong-Pil Kim ,  Jang-Yul Kim

IPC分类号： C01F17/00 ,  B32B5/16 ,  C09K13/00

CPC分类号： C09G1/02 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2004/03 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C09K3/1409 ,  H01L21/31053 ,  Y10T428/2982

摘要： Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of pure organic solvent containing no water is used as a solvent for the cerium precursor solution as well as the precipitant solution to thereby prepare the cerium oxide powder, the particle size of which is adjusted to 50 nm to 3 μm. Cerium oxide powder obtained from the method and CMP slurry comprising the cerium oxide powder as a polishing agent are also disclosed. The method makes it possible to prepare cerium oxide powder with an average particle size of 50 nm or greater and high crystallinity, which is difficult to prepare by the conventional wet precipitation process, by using an organic solvent as a solvent in a wet precipitation process, and the so-prepared cerium oxide powder can be used as a polishing agent for CMP slurry even without being subjected to separate heat treatment.

摘要翻译： 公开了一种通过以下步骤直接制备氧化铈粉末的方法：a）将铈前体溶液与沉淀剂溶液混合以引起反应; 和b）对反应溶液进行氧化处理，其中使用至少一种不含水的纯有机溶剂作为铈前体溶液的溶剂以及沉淀剂溶液，从而制备氧化铈粉末，其粒度 调整为50nm〜3μm。 还公开了由该方法获得的氧化铈粉末和包含氧化铈粉末作为抛光剂的CMP浆料。 该方法可以通过在湿沉淀法中使用有机溶剂作为溶剂来制备平均粒径为50nm以上的高结晶度的氧化铈粉末，这在常规的湿法沉淀法难以制备， 并且如此制备的氧化铈粉末即使不经过单独的热处理也可用作CMP浆料的抛光剂。

公开(公告)号：US20110008967A1

公开(公告)日：2011-01-13

申请号：US12921341

申请日：2009-03-03

申请人： Jong-Pil Kim ,  Seung-Beom Cho ,  Jun-Seok Noh ,  Jang-Yul Kim

发明人： Jong-Pil Kim ,  Seung-Beom Cho ,  Jun-Seok Noh ,  Jang-Yul Kim

IPC分类号： H01L21/306 ,  C09K13/06

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/76229

摘要： The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method.The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.

摘要翻译： 本发明涉及当其用于例如氧化硅层的抛光或平面化时能够减少凹陷产生的CMP浆料，以及抛光方法。 CMP浆料包括抛光磨料，线性阴离子聚合物，包含磷酸基团和水的化合物，CMP抛光速度与氧化硅层的比例：CMP抛光速度与氮化硅层的比例为30:1至 50：1。

公开(公告)号：US08969204B2

公开(公告)日：2015-03-03

申请号：US12921341

申请日：2009-03-03

申请人： Jong-Pil Kim ,  Seung-Beom Cho ,  Jun-Seok Noh ,  Jang-Yul Kim

发明人： Jong-Pil Kim ,  Seung-Beom Cho ,  Jun-Seok Noh ,  Jang-Yul Kim

IPC分类号： H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  H01L21/3105 ,  C09G1/02 ,  C09K3/14 ,  H01L21/762

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/76229

摘要： The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method.The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.

摘要翻译： 本发明涉及当其用于例如氧化硅层的抛光或平面化时能够减少凹陷产生的CMP浆料，以及抛光方法。 CMP浆料包括抛光磨料，线性阴离子聚合物，包含磷酸基团和水的化合物，CMP抛光速度与氧化硅层的比例：CMP抛光速度与氮化硅层的比例为30:1至 50：1。