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公开(公告)号：US08642488B2
公开(公告)日：2014-02-04
申请号：US12605863
申请日：2009-10-26
Applicant: Junjun Liu , Eric M. Lee , Dorel L. Toma
Inventor： Junjun Liu , Eric M. Lee , Dorel L. Toma
IPC: H01L21/26
CPC classification number: H01L21/02348 , B05D3/062 , H01L21/67034 , H01L21/67115 , H01L21/67207
Abstract: A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.
Abstract translation: 一种用于固化电介质膜的多步骤系统和方法，其中所述系统包括被配置为减少所述电介质膜中的诸如水分的污染物的量的干燥系统。 该系统还包括耦合到干燥系统的固化系统，并且被配置为用紫外线（UV）辐射和红外（IR）辐射来处理电介质膜，以便固化电介质膜。
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公开(公告)号：US20110233430A1
公开(公告)日：2011-09-29
申请号：US13072668
申请日：2011-03-25
Applicant: Hongyu YUE , Junjun LIU , Jacques FAGUET , Dorel I. TOMA
Inventor： Hongyu YUE , Junjun LIU , Jacques FAGUET , Dorel I. TOMA
IPC: G21K5/00
CPC classification number: H01L21/67028 , B08B7/0042 , B08B7/005 , B08B7/0057 , H01L21/67115 , Y10S430/145
Abstract: A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate.
Abstract translation: 描述了用于处理电介质膜的处理模块，特别是用于将例如低介电常数（低k）电介质膜暴露于紫外线（UV））辐射的处理模块。 处理模块包括处理室，耦合到处理室并被配置为支撑衬底的衬底保持器，以及耦合到处理室并被配置为将电介质膜暴露于电磁（EM）辐射的辐射源。 辐射源包括UV源，其中UV源具有UV灯和用于将来自UV灯的反射的UV辐射引导到衬底的反射器。 反射器具有二向色反射器和设置在UV灯和衬底之间的非吸收反射器，并被配置为将来自UV灯的UV辐射反射到二向色反射器，其中非吸收反射器基本上防止来自UV灯的直接UV辐射 紫外灯到底物。
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公开(公告)号：US20110186443A1
公开(公告)日：2011-08-04
申请号：US12697985
申请日：2010-02-01
Applicant: Hongyu H. YUE , Junjun LIU , Dorel I. TOMA
Inventor： Hongyu H. YUE , Junjun LIU , Dorel I. TOMA
Abstract: An apparatus for cutting a workpiece using electrochemical etching and a method of using thereof are described. The apparatus includes an electrochemical bath configured to contain an electrochemical solution, a support apparatus configured to support and immerse a workpiece in the electrochemical bath, and a non-contact cutting device configured to extend into the electrochemical bath and slice the workpiece via electrochemical etching along a cutting plane. The apparatus further includes an electromagnetic (EM) radiation source configured to illuminate a cutting surface formed between opposing sidewalls within an evolving cutting groove formed in the workpiece during slicing along the cutting plane.
Abstract translation: 描述了使用电化学蚀刻来切割工件的设备及其使用方法。 该设备包括配置成容纳电化学溶液的电化学浴，配置成将工件支撑并浸入电化学浴中的支撑装置，以及非接触式切割装置，其被配置成延伸到电化学浴中并通过电化学蚀刻沿切割工件 切割机 该装置还包括电磁（EM）辐射源，其构造成在沿着切割平面切割期间照亮形成在工件中形成的放射切割槽内的相对侧壁之间形成的切割表面。
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4.发明申请公开(公告)号：US20100068897A1
公开(公告)日：2010-03-18
申请号：US12211681
申请日：2008-09-16
Applicant: Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
Inventor： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
CPC classification number: H01L21/67115 , H01L21/3105
Abstract: A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
Abstract translation: 描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置 用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。
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公开(公告)号：US20100067886A1
公开(公告)日：2010-03-18
申请号：US12211675
申请日：2008-09-16
Applicant: Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
Inventor： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC: A21B2/00
CPC classification number: H01L21/31695 , B05D1/002 , B05D3/0209 , B05D3/0263 , B05D3/067 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/02345 , H01L21/02348 , H01L21/3105
Abstract: A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
Abstract translation: 描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个工艺模块配置 用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。
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Patent Agency Ranking
公开(公告)号：US20100065759A1
公开(公告)日：2010-03-18
申请号：US12211640
申请日：2008-09-16
Applicant: Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
Inventor： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC: A61N5/00
CPC classification number: H01L21/67115 , B23K26/082 , B23K26/12 , B23K26/127 , C23C16/56
Abstract: A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
Abstract translation: 描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置 用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。
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公开(公告)号：US20100065758A1
公开(公告)日：2010-03-18
申请号：US12211598
申请日：2008-09-16
Applicant: Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
Inventor： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC: G21K5/00
CPC classification number: H01L21/268 , H01L21/67115 , H01L21/67184 , H01L21/67207
Abstract: A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
Abstract translation: 描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个工艺模块配置 用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。
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公开(公告)号：US20100041248A1
公开(公告)日：2010-02-18
申请号：US12605863
申请日：2009-10-26
Applicant: Junjun LIU , Eric M. Lee , Dorel L. Toma
Inventor： Junjun LIU , Eric M. Lee , Dorel L. Toma
IPC: H01L21/26
CPC classification number: H01L21/02348 , B05D3/062 , H01L21/67034 , H01L21/67115 , H01L21/67207
Abstract: A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.
Abstract translation: 一种用于固化电介质膜的多步骤系统和方法，其中所述系统包括被配置为减少所述电介质膜中的诸如水分的污染物的量的干燥系统。 该系统还包括耦合到干燥系统的固化系统，并且被配置为用紫外线（UV）辐射和红外（IR）辐射来处理电介质膜，以便固化电介质膜。
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公开(公告)号：US20090226695A1
公开(公告)日：2009-09-10
申请号：US12043850
申请日：2008-03-06
Applicant: Junjun Liu , Dorel I. Toma , Eric M. Lee
Inventor： Junjun Liu , Dorel I. Toma , Eric M. Lee
CPC classification number: H01L21/31633 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02214 , H01L21/02318 , Y10T428/249953
Abstract: A method of preparing a porous dielectric film on a substrate is described. The method comprises exposing the porous dielectric film to infrared (IR) radiation, while not exposing the porous dielectric film to any ultraviolet (UV) radiation preceding, during and following the IR exposure.
Abstract translation: 描述了在衬底上制备多孔电介质膜的方法。 该方法包括将多孔电介质膜暴露于红外（IR）辐射，同时不将多孔介电膜暴露于IR曝光之前，期间和之后的任何紫外线（UV）辐射。
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公开(公告)号：US20090075491A1
公开(公告)日：2009-03-19
申请号：US11854937
申请日：2007-09-13
Applicant: Junjun LIU , Dorel I. TOMA , Eric LEE
Inventor： Junjun LIU , Dorel I. TOMA , Eric LEE
IPC: H01L21/00
CPC classification number: H01L21/67115 , H01L21/3105 , H01L21/31058
Abstract: A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to ultraviolet (UV) radiation. Following the UV exposure, the dielectric film is exposed to IR radiation.
Abstract translation: 描述了在基底上固化低介电常数（低k）电介质膜的方法，其中低k电介质膜的介电常数小于约4的值。该方法包括使低k电介质 膜对紫外线（UV）辐射。 在UV曝光之后，电介质膜暴露于IR辐射。
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