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    Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation
    4.
    发明授权
    Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation 有权
    通过等离子体成膜法和等离子体氮化法制造非易失性半导体存储器件的方法

    公开(公告)号：US08084315B2

    公开(公告)日：2011-12-27

    申请号：US12622816

    申请日：2009-11-20

    申请人： Katsuhiko Yamamoto ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

    发明人： Katsuhiko Yamamoto ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

    IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/792

    CPC分类号： H01L21/28282 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/3115 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7885

    摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.

    摘要翻译： 提供了一种能够提高非易失性存储器的记忆保持特性的技术。 特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性 非易失性存储器的保留特性。 在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成 在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。

    Fuel Cell System
    6.
    发明申请
    Fuel Cell System 审中-公开
    燃料电池系统

    公开(公告)号：US20080113252A1

    公开(公告)日：2008-05-15

    申请号：US11792094

    申请日：2005-12-13

    申请人： Katsuhiko Yamamoto ,  Osamu Yumita ,  Naoki Kanie ,  Naohiro Yoshida

    发明人： Katsuhiko Yamamoto ,  Osamu Yumita ,  Naoki Kanie ,  Naohiro Yoshida

    IPC分类号： H01M8/02 ,  H01M8/04

    CPC分类号： H01M8/04097 ,  H01M8/04223 ,  H01M8/04228 ,  H01M8/0432 ,  H01M8/0438 ,  H01M8/04753 ,  H01M8/04761 ,  H01M8/0625 ,  H01M8/0662 ,  H01M2008/1095

    摘要： It is an object to provide a simple fuel cell system and to provide a fuel cell system capable of reducing the amount of consumption of fuel gas at the time of completion of operation. A fuel cell system includes a supply piping from a fuel gas supply source storing fuel gas to a gas inlet of a fuel cell and a circulation piping from a gas outlet of the fuel cell to a junction at which the circulation piping joins the supply piping. A regulating valve and a shut-off valve are disposed on the upstream side of the junction in the supply piping. A portion on the downstream side of the junction in the supply piping and the circulation piping are in constant communicated.

    摘要翻译： 本发明的目的是提供简单的燃料电池系统，并且提供能够在完成操作时减少燃料气体消耗量的燃料电池系统。 燃料电池系统包括从储存燃料气体的燃料气体供给源到燃料电池的气体入口的燃料气体供给源和从燃料电池的气体出口到循环配管与供给配管连接的连接部的循环配管。 调节阀和截止阀设置在供应管道中的接合部的上游侧。 供应管道和循环管道中的连接处的下游侧的一部分不断地连通。

    Method For Manufacturing Semiconductor Device, And Substrate Processing Apparatus
    7.
    发明申请
    Method For Manufacturing Semiconductor Device, And Substrate Processing Apparatus 有权
    半导体器件制造方法及基板处理装置

    公开(公告)号：US20080032514A1

    公开(公告)日：2008-02-07

    申请号：US11791222

    申请日：2005-11-29

    申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Katsuhiko Yamamoto

    发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Katsuhiko Yamamoto

    IPC分类号： H01L21/31 ,  C23C16/00

    CPC分类号： H01L21/02148 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/0228 ,  H01L21/31604

    摘要： The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured. A step is provided for supplying a first raw material, which contains a metal atom, and a second raw material, which contains a silicon atom and a nitrogen atom, into a processing chamber (4); and forming on a substrate (30) a metal silicate film containing the metal atom and silicon atom. A raw material supply ratio of the first and second raw materials is controlled in the step of forming a metal silicate film, thereby controlling a concentration ratio of the metal and silicon in the resulting metal silicate film.

    摘要翻译： 提高了控制金属硅酸盐膜中的金属和硅的浓度比的能力，能够制造高品质的半导体装置。 提供了将含有金属原子的第一原料和含有硅原子和氮原子的第二原料供给到处理室（4）中的步骤; 以及在基板（30）上形成含有所述金属原子和硅原子的金属硅酸盐膜。 在形成金属硅酸盐膜的步骤中控制第一和第二原料的原料供给比，从而控制所得金属硅酸盐膜中的金属和硅的浓度比。

    Cooling unit for cooling a heat-generating components and electronic apparatus having the cooling unit
    9.
    发明授权
    Cooling unit for cooling a heat-generating components and electronic apparatus having the cooling unit 有权
    用于冷却具有冷却单元的发热部件和电子设备的冷却单元

    公开(公告)号：US6049455A

    公开(公告)日：2000-04-11

    申请号：US337752

    申请日：1999-06-22

    申请人： Hiroshi Nakamura ,  Katsuhiko Yamamoto

    发明人： Hiroshi Nakamura ,  Katsuhiko Yamamoto

    IPC分类号： F04D29/54 ,  F04D29/58 ,  G06F1/20 ,  H05K7/20

    CPC分类号： G06F1/203 ,  F04D29/4226 ,  F04D29/441

    摘要： A cooling unit comprising a heat radiating plate and an electric fan device. The heat radiating plate has thermal conductivity and comprises a heat receiving portion and a heat exchanging portion, which are arranged side by side. The heat receiving portion is thermally connected to a heat-generating component. The heat exchanging portion is made integral with the heat receiving portion. The fan device having a fan and a flat fan casing. The fan casing has an air inlet port for drawing cooling air when the fan is driven, an air outlet port for guiding the cooling air, and an opening opposing the inlet port. The opening closed by the heat radiating plate.

    摘要翻译： 一种冷却单元，包括散热板和电风扇装置。 散热板具有导热性并且包括并排布置的热接收部分和热交换部分。 热接收部分热连接到发热部件。 热交换部与热接收部一体地形成。 风扇装置具有风扇和平坦的风扇壳体。 风扇壳体具有用于在驱动风扇时抽出冷却空气的空气入口，用于引导冷却空气的空气出口以及与入口相对的开口。 开口由散热板封闭。