摘要:
The present invention aims at providing a material for a diamond sintered compact tool, which has a high strength and is available as a material for a cutting tool. Accordingly, the present invention is concerned with a diamond sintered compact comprising a WC-Co type cemented carbide substrate having slight undulation and a diamond sintered compact bonded to one surface of the substrate by sintering during a step of sintering at an ultra-high pressure and high temperature, which has a plate thickness is 0.5 mm to 5 mm and an outer diameter is at least 20 mm and whose diamond sintered compact layer has at least 50% of a thickness area within a range of 0.05 mm to 0.4 mm and contains Co diffusing from the cemented carbide substrate.
摘要:
A polycrystal diamond tool is provided whose heat resistance, strength and anti-adhesion property are improved by modifying the porosity of a diamond sintered compact and which comprises a diamond sintered compact, sintered under ultra-high pressure and high temperature, brazed onto a tool substrate, in which the cutting edge vicinity part consists of 85 to 99 volume % of the diamond sintered compact material consisting of diamond grains bonded with each other and the balance of pores, and the other part than the cutting edge vicinity part consists of diamond grains and the balance of a brazing material.
摘要:
The present invention provides a diamond sintered compact tool. Which is excellent in economy as well as cutting edge strength. A diamond sintered compact cutting tool comprising a diamond sintered compact sintered at an ultra-high pressure and high temperature and a WC—Co cemented carbide substrate directly bonded to the diamond sintered compact during a step of sintering and brazed to a tool base through the WC—Co cemented carbide substrate, in which a ratio of the thickness of the WC—Co cemented carbide substrate to the thickness of the diamond sintered compact layer satisfies the relation of: 0.8≦WC—Co cemented carbide substrate/diamond sintered compact layer≦3.0 and the diamond sintered compact layer has a thickness of 0.05 mm to 0.5 mm, preferably 0.05 mm to 0.45 mm, more preferably 0.12 mm to 0.36 mm.
摘要:
This invention relates to a high thermal conductivity composite material which comprises diamond particles and a copper matrix useful as electronic heat sinks for electronics parts, particularly for semiconductor lasers, high performance MPUs (micro-processing units), etc., also to a process for the production of the same and a heat sink using the same. According to the high thermal conductivity diamond sintered compact of the present invention, in particular, there can be provided a heat sink having a high thermal conductivity as well as matching of thermal expansions, most suitable for mounting a large sized and high thermal load semiconductor chip, for example, high output semiconductor lasers, high performance MPU, etc. Furthermore, the properties such as thermal conductivity and thermal expansion can freely be controlled, so it is possible to select the most suitable heat sink depending upon the features and designs of elements to be mounted.
摘要:
This invention relates to a high thermal conductivity composite material which comprises diamond particles and a copper matrix useful as electronic heat sinks for electronics parts, particularly for semiconductor lasers, high performance MPUs (micro-processing units), etc., also to a process for the production of the same and a heat sink using the same. According to the high thermal conductivity diamond sintered compact of the present invention, in particular, there can be provided a heat sink having a high thermal conductivity as well as matching of thermal expansions, most suitable for mounting a large sized and high thermal load semiconductor chip, for example, high output semiconductor lasers, high performance MPU, etc. Furthermore, the properties such as thermal conductivity and thermal expansion can freely be controlled, so it is possible to select the most suitable heat sink depending upon the features and designs of elements to be mounted.
摘要:
An ohmic electrode for n-type cubic boron nitride made of two thin films; the first being at least one alloy material selected from the group consisting of Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, and the second being at least one metallic material selected from the group consisting of Ni, Cr, Mo and Pt and process for the production thereof.
摘要:
The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 μm and not more than 10 μm and an average length of roughness profile elements RSm of not less than 3.1 μm and not more than 5.4 μm, and that the diamond layer has a plurality of cavities at a portion bordering on the base material.
摘要:
A diamond electrode includes a conductive silicon substrate having a plurality of pores. The diamond electrode also includes a conductive diamond covering the conductive silicon substrate. The inner wall surfaces of the plurality of pores are at an angle of 60° to 85° with respect to a substrate of the conductive silicon substrate.
摘要:
The present invention provides a diamond coated tool which is resistant to exfoliation at an interface between a base material and a diamond layer. The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 μm and not more than 10 μm and an average length of roughness profile elements RSm of not less than 1 μm and not more than 100 μm, and that the diamond layer has a plurality of cavities extending from a portion bordering on the base material in a crystal growth direction.
摘要:
A diamond electrode having an oxidation resistant diamond film which will not separate from the electrode during electrolysis with highly oxidizing materials. The thickness of the diamond film is 20 pm or more and the diamond film should preferably cover opposite side surfaces of a substrate in such a manner as to also cover end surfaces 2a of the substrate. The surfaces of the substrate are covered with a plurality of diamond layers to form the film using repeated steps of forming separate diamond layers with each diamond layer having a thickness of 10 to 30 pm on one of the surfaces of the substrate and then forming a diamond layer having a thickness of 10 to 30 pm on the other surface of the substrate. Thus, it is possible to form a nonporous surface of diamond layer and prevent deterioration of an electrode caused by the separation of a diamond film.