Diamond sintered compact and a process for the production of the same
    1.
    发明授权
    Diamond sintered compact and a process for the production of the same 有权
    金刚石烧结体及其制造方法

    公开(公告)号:US06342301B1

    公开(公告)日:2002-01-29

    申请号:US09362093

    申请日:1999-07-28

    IPC分类号: B32B900

    摘要: The present invention aims at providing a material for a diamond sintered compact tool, which has a high strength and is available as a material for a cutting tool. Accordingly, the present invention is concerned with a diamond sintered compact comprising a WC-Co type cemented carbide substrate having slight undulation and a diamond sintered compact bonded to one surface of the substrate by sintering during a step of sintering at an ultra-high pressure and high temperature, which has a plate thickness is 0.5 mm to 5 mm and an outer diameter is at least 20 mm and whose diamond sintered compact layer has at least 50% of a thickness area within a range of 0.05 mm to 0.4 mm and contains Co diffusing from the cemented carbide substrate.

    摘要翻译: 本发明的目的在于提供一种具有高强度且可作为切削工具的材料的金刚石烧结压实工具的材料。因此,本发明涉及一种包含WC-Co型胶结的金刚石烧结体 在具有厚度为0.5mm至5mm的超高压和高温烧结步骤期间通过烧结而结合到衬底的一个表面的金刚石烧结体的金刚石烧结体的厚度为0.5mm至5mm,外径为 至少20mm,并且其金刚石烧结致密层具有至少50%的厚度面积在0.05mm至0.4mm的范围内,并且包含从硬质合金基底扩散的Co。

    Polycrystal diamond tool
    3.
    发明授权
    Polycrystal diamond tool 有权
    多晶金刚石工具

    公开(公告)号:US06358624B1

    公开(公告)日:2002-03-19

    申请号:US09571173

    申请日:2000-05-16

    IPC分类号: B22F700

    摘要: The present invention provides a diamond sintered compact tool. Which is excellent in economy as well as cutting edge strength. A diamond sintered compact cutting tool comprising a diamond sintered compact sintered at an ultra-high pressure and high temperature and a WC—Co cemented carbide substrate directly bonded to the diamond sintered compact during a step of sintering and brazed to a tool base through the WC—Co cemented carbide substrate, in which a ratio of the thickness of the WC—Co cemented carbide substrate to the thickness of the diamond sintered compact layer satisfies the relation of: 0.8≦WC—Co cemented carbide substrate/diamond sintered compact layer≦3.0 and the diamond sintered compact layer has a thickness of 0.05 mm to 0.5 mm, preferably 0.05 mm to 0.45 mm, more preferably 0.12 mm to 0.36 mm.

    摘要翻译: 本发明提供一种金刚石烧结压块工具。 具有优异的经济性和切削刃强度。一种金刚石烧结致密切割工具,包括在超高压和高温下烧结的金刚石烧结体和在金刚石烧结体中直接接合的WC-Co硬质合金基体 通过WC-Co硬质合金基体烧结并钎焊到工具基底的步骤,其中WC-Co硬质合金基体的厚度与金刚石烧结致密层的厚度之比满足以下关系:和金刚石 烧结致密层的厚度为0.05mm〜0.5mm,优选为0.05mm〜0.45mm,更优选为0.12mm〜0.36mm。

    Diamond coated tool
    9.
    发明授权
    Diamond coated tool 有权
    金刚石涂层工具

    公开(公告)号:US09302327B2

    公开(公告)日:2016-04-05

    申请号:US13139799

    申请日:2010-06-08

    摘要: The present invention provides a diamond coated tool which is resistant to exfoliation at an interface between a base material and a diamond layer. The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 μm and not more than 10 μm and an average length of roughness profile elements RSm of not less than 1 μm and not more than 100 μm, and that the diamond layer has a plurality of cavities extending from a portion bordering on the base material in a crystal growth direction.

    摘要翻译: 本发明提供一种金刚石涂层的工具,其耐磨性在基材和金刚石层之间的界面处。 本发明的金刚石涂层工具是金刚石涂层工具,其包括基材和涂覆基材表面的金刚石层,其特征在于,基材表面的算术平均粗糙度Ra为0.1以上 μm且不大于10μm,粗糙度轮廓元素RSm的平均长度不小于1μm且不大于100μm,并且金刚石层具有从基体材料上接合的部分延伸的多个空腔 晶体生长方向。

    DIAMOND ELECTRODE AND METHOD FOR MANUFACTURING DIAMOND ELECTRODE
    10.
    发明申请
    DIAMOND ELECTRODE AND METHOD FOR MANUFACTURING DIAMOND ELECTRODE 审中-公开
    金刚石电极及制造金刚石电极的方法

    公开(公告)号:US20110247929A1

    公开(公告)日:2011-10-13

    申请号:US12998181

    申请日:2009-09-18

    IPC分类号: C25B11/12 B05D5/12 H01B5/00

    摘要: A diamond electrode having an oxidation resistant diamond film which will not separate from the electrode during electrolysis with highly oxidizing materials. The thickness of the diamond film is 20 pm or more and the diamond film should preferably cover opposite side surfaces of a substrate in such a manner as to also cover end surfaces 2a of the substrate. The surfaces of the substrate are covered with a plurality of diamond layers to form the film using repeated steps of forming separate diamond layers with each diamond layer having a thickness of 10 to 30 pm on one of the surfaces of the substrate and then forming a diamond layer having a thickness of 10 to 30 pm on the other surface of the substrate. Thus, it is possible to form a nonporous surface of diamond layer and prevent deterioration of an electrode caused by the separation of a diamond film.

    摘要翻译: 具有抗氧化金刚石膜的金刚石电极,其在用高度氧化的材料电解期间不会与电极分离。 金刚石膜的厚度为20μm以上,并且金刚石膜优选以覆盖基板的端面2a的方式覆盖基板的相对侧面。 衬底的表面被多个金刚石层覆盖,以通过重复的步骤形成单独的金刚石层,每个金刚石层的厚度为10至30μm,其中一个表面上形成金刚石,然后形成金刚石 层在基板的另一个表面上具有10至30μm的厚度。 因此,可以形成金刚石层的无孔表面,并防止金刚石膜分离引起的电极劣化。