公开(公告)号：US4410690A

公开(公告)日：1983-10-18

申请号：US373693

申请日：1982-04-30

申请人： Akira Miyamoto ,  Katsuo Sato ,  Toshiaki Nishimura ,  Yoshitaka Yamagishi ,  Yoshimasa Mitui

发明人： Akira Miyamoto ,  Katsuo Sato ,  Toshiaki Nishimura ,  Yoshitaka Yamagishi ,  Yoshimasa Mitui

IPC分类号： C08G10/00 ,  C08G10/04 ,  C08G63/547 ,  C08G2/28

CPC分类号： C08G63/547

摘要： A process for the preparation of a modified aromatic hydrocarbon resin which comprises reacting an aromatic hydrocarbon-formaldehyde resin with an unsaturated polybasic acid or an anhydride thereof, together with a saturated polybasic acid or an anhydride thereof if necessary, in the presence or absence of water, while introducing steam into the reaction system to remove by-produced formaldehyde out of the reaction system, and reacting the formed reaction product with at least one dihydroxy compound selected from the group consisting of (A) a glycol and (B) a hydroxy-terminated oligomer obtained by reacting a glycol with an unsaturated polybasic acid or an anhydride thereof; the cured product of the modified aromatic hydrocarbon resin being excellent in mechanical strength and resistance to water and alkalis.

摘要翻译： 一种制备改性芳族烃树脂的方法，其包括在有或没有水的情况下使芳族烃 - 甲醛树脂与不饱和多元酸或其酸酐以及必要时的饱和多元酸或其酸酐反应 同时将蒸汽引入反应体系以除去反应体系中的副产甲醛，并使形成的反应产物与至少一种选自（A）二醇和（B）羟基 - 通过使二醇与不饱和多元酸或其酸酐反应得到的封端低聚物; 改性芳族烃树脂的固化产物具有优异的机械强度和耐水和耐碱性。

公开(公告)号：US4541958A

公开(公告)日：1985-09-17

申请号：US497283

申请日：1983-05-23

申请人： Akira Miyamoto ,  Katsuo Sato ,  Tetsushi Ichikawa ,  Masahiro Kurokawa

发明人： Akira Miyamoto ,  Katsuo Sato ,  Tetsushi Ichikawa ,  Masahiro Kurokawa

IPC分类号： C08G59/00 ,  C07C67/00 ,  C07C213/00 ,  C07C215/18 ,  C08G59/54 ,  C08G69/48 ,  C09D163/00 ,  C09J163/00 ,  C09F5/00 ,  C09F7/00

CPC分类号： C08G69/48 ,  C08G59/54

摘要： A hardening agent for epoxy resins comprising an amideamine compound which is a reaction product between (A) a polyamine mainly comprising a compound represented by the formula: ##STR1## wherein n represents 1 or 2, which is obtained by reacting m-xylylenediamine and epichlorohydrin, and (B) a carboxylic acid.

摘要翻译： 一种环氧树脂用硬化剂，其包含酰胺胺化合物，所述酰胺胺化合物是主要包含由下式表示的化合物的多胺的反应产物：其中n表示1或2，其通过间苯二甲胺和表氯醇反应而得到 ，和（B）羧酸。

公开(公告)号：US4605765A

公开(公告)日：1986-08-12

申请号：US651024

申请日：1984-10-29

申请人： Akira Miyamoto ,  Katsuo Sato ,  Masahiro Kurokawa

发明人： Akira Miyamoto ,  Katsuo Sato ,  Masahiro Kurokawa

IPC分类号： C08G69/00 ,  C07C67/00 ,  C07C213/00 ,  C07C215/18 ,  C08G59/00 ,  C08G59/50 ,  C08G59/64 ,  C08G69/02 ,  C08G69/26 ,  C07C87/28

CPC分类号： C08G69/265 ,  C08G59/64

摘要： A novel polyamine compound, N,N'-bis(3-aminomethylbenzyl)-2-hydroxytrimethylenediamine, having the formula ##STR1## which is useful as a hardening agent for epoxy resins and as a modifier for polyamide resins.

摘要翻译： 具有式“IMAGE”的新型多胺化合物N，N'-双（3-氨基甲基苄基）-2-羟基三亚甲基二胺，其可用作环氧树脂的硬化剂和聚酰胺树脂的改性剂。

公开(公告)号：US07102461B2

公开(公告)日：2006-09-05

申请号：US10895911

申请日：2004-07-22

申请人： Masahiro Nakano ,  Akira Mashimo ,  Katsuo Sato

发明人： Masahiro Nakano ,  Akira Mashimo ,  Katsuo Sato

IPC分类号： H03H9/72 ,  H03H9/64 ,  H03H3/08

CPC分类号： H03H9/02992 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/16225 ,  H03H3/08 ,  H03H9/02929 ,  H03H9/02984 ,  H03H9/0576 ,  H03H9/059 ,  H03H9/1071 ,  H03H9/72 ,  H03H9/725 ,  Y10T29/42 ,  H01L2924/00014

摘要： In a surface acoustic wave element according to an embodiment of this invention, raised electrodes 20 formed on thin film electrodes 18 are provided with throughholes 31. Additionally, bumps 26 arranged on the raised electrodes 20 reach the thin film electrode 18 by going through an oxide film 18a of the thin film electrodes 18 after part of the bumps enters the throughholes 31 of the raised electrodes 20. By doing this, conduction is achieved between the thin film electrodes 18 and the bumps 26 formed on a piezoelectric monocrystal substrate 28. Thus, a solid oxide film 18a is formed on the surface of the thin film electrodes 18 formed from monocrystal aluminum, but part of the bumps 26 which enters the throughholes 31 of the raised electrodes 20 goes through this oxide film 18a, so conduction between the thin film electrode 18 and the bump 26 is achieved with higher accuracy.

摘要翻译： 在根据本发明的实施例的表面声波元件中，形成在薄膜电极18上的凸起电极20设置有通孔31。 此外，在凸起电极20上布置的凸点26通过穿过薄膜电极18的氧化膜18a而到达薄膜电极18，一部分凸块进入凸起电极20的通孔31。 通过这样做，在薄膜电极18和形成在压电单晶基板28上的凸点26之间实现导通。 因此，在由单晶铝形成的薄膜电极18的表面上形成固体氧化物膜18a，但是进入凸起电极20的通孔31的凸块26的一部分穿过该氧化膜18a，因此导通 以更高的精度实现薄膜电极18和凸块26之间的连接。

公开(公告)号：US20060134834A1

公开(公告)日：2006-06-22

申请号：US11333316

申请日：2006-01-18

申请人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

发明人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

IPC分类号： H01L21/48

CPC分类号： H03H9/1071 ,  H01L2224/16225 ,  H01L2224/45144 ,  H03H9/0585 ,  H03H9/059 ,  H03H9/08 ,  H01L2924/00

摘要： A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23. are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 μmRMS Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

摘要翻译： 衬底电极12a的基本部分层21，其在陶瓷的衬底构件上电连接到突出电极13。 对其上形成有碱性部分层21的基材进行烧结。 研磨烧结基板部件中的基体部分层21的表面。 在抛光的基底层21上，形成镀层22,23，使得基板电极12a的表面粗糙度例如可以不大于0.1μm。因此，集成电路元件的结合强度 可以提高通过倒装芯片方法的封装衬底。

公开(公告)号：US06452306B1

公开(公告)日：2002-09-17

申请号：US09952927

申请日：2001-09-14

申请人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki

发明人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki

IPC分类号： H01L4104

CPC分类号： H03H9/02543

摘要： A compact and wide band surface acoustic wave device for intermediate-frequency is disclosed. A piezoelectric substrate for use in a surface acoustic wave device having high electromechanical coupling factor and low SAW velocity is also disclosed. The surface acoustic wave device is constituted of a piezoelectric substrate 1 and inter-digital electrodes 2, 2 formed on the piezoelectric substrate 1. The piezoelectric substrate 1 has a crystal structure of Ca3Ga2Ge4O14 and is represented by the chemical formula, Sr3NbGa3Si2O14. A cut angle of the piezoelectric substrate 1 cut out of the single crystal and a direction of propagation of surface acoustic waves on the piezoelectric substrate represented in terms of Euler's angles (&phgr;, &thgr;, &psgr;) are found in one of a first area represented by −5°≦&phgr;≦15°, 0°≦&thgr;≦180°, and −50°≦&psgr;≦50° and a second area represented by 15°≦&phgr;≦30°, 0°≦&thgr;≦180°, and −40°≦&psgr;≦40°.

摘要翻译： 公开了一种用于中频的紧凑且宽带的声表面波装置。 还公开了一种用于具有高机电耦合系数和低SAW速度的表面声波装置中的压电基片。声表面波装置由压电基片1和形成在压电基片1上的数字间电极2,2构成 压电基板1具有Ca 3 Ga 2 Ge 4 O 14的晶体结构，由化学式Sr 3 Nb Ga 3 Si 2 O 14表示。 由欧姆角（phi，θ，psi）表示的压电基片1从单晶切割的角度和表面声波的传播方向在欧拉角（phi，θ，psi）表示的第一区域中， -5°<= phi <= 15°，0°<=θ<= 180°，-50°<= psi <= 50°，第二区由15°<= phi <= 30°，0° <=θ<= 180°，-40°<= psi <= 40°。

公开(公告)号：US07132310B2

公开(公告)日：2006-11-07

申请号：US11333316

申请日：2006-01-18

申请人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

发明人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H03H9/1071 ,  H01L2224/16225 ,  H01L2224/45144 ,  H03H9/0585 ,  H03H9/059 ,  H03H9/08 ,  H01L2924/00

摘要： A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 μmRMS. Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

摘要翻译： 衬底电极12a的基本部分层21，其在陶瓷的衬底构件上电连接到突出电极13。 对其上形成有碱性部分层21的基材进行烧结。 研磨烧结基板部件中的基体部分层21的表面。 在抛光的基底层21上形成镀层22,23，使得基板电极12a的表面粗糙度例如可以不大于0.1μmumRMS。 因此，可以提高通过倒装芯片方法安装在封装基板上的集成电路元件的结合强度。

公开(公告)号：US06696736B2

公开(公告)日：2004-02-24

申请号：US10332958

申请日：2003-01-14

申请人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Jun Sato

发明人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Jun Sato

IPC分类号： H01L2982

CPC分类号： H03H9/02543

摘要： The surface acoustic wave device comprises a piezoelectric substrate (1) and a pair of interdigitated electrodes (2) provided on one main surface of the piezoelectric substrate (1). As the material of the piezoelectric substrate (1), a single crystal belonging to the point group 32, having a crystal structure of Ca3Ga2Ge4O14 type, containing Ca, Nb, Ga, Si and O as main components, and being represented by the chemical formula Ca3NbGa3Si2O14 is used. The cut angle of the substrate (1) and the propagation direction can be selected as appropriate to thereby realize the substrate (1) which has a large electromechanical coupling coefficient that is effective to achieve a wider passband and a low SAW velocity that is effective to reduce the size of a surface acoustic wave device.

摘要翻译： 表面声波装置包括压电基片（1）和设置在压电基片（1）的一个主表面上的一对叉指电极（2）。 作为压电基板（1）的材料，属于具有Ca 3 Ga 2 Ge 4 O 14型晶体结构的点组32的单晶，含有Ca，Nb，Ga，Si和O作为主要成分，并且由化学式 使用Ca3NbGa3Si2O14。 可以适当选择基板（1）的切割角度和传播方向，从而实现具有大的机电耦合系数的基板（1），其有效地实现更宽的通带和低的SAW速度， 减小声表面波器件的尺寸。

公开(公告)号：US06323577B1

公开(公告)日：2001-11-27

申请号：US09420938

申请日：1999-10-19

申请人： Kenji Inoue ,  Katsuo Sato

发明人： Kenji Inoue ,  Katsuo Sato

IPC分类号： H01L4104

CPC分类号： H03H9/02598

摘要： A SAW device has interdigital electrodes on a substrate, wherein the substrate is obtained by slicing a single crystal represented by the chemical formula: La3Ta0.5Ga5.5O14 (LTG) at a cut angle. The cut angle and the direction of propagation of SAW along the substrate are optimized so that the substrate may have a low SAW velocity and an increased electromechanical coupling constant. This enables to reduce the size of the SAW device and broaden the pass-band width thereof as a filter, providing satisfactory characteristics especially as a SAW filter of intermediate frequency for mobile communication terminals. The SAW device has a minimal loss since SAW energy concentrates in the propagation direction.

摘要翻译： SAW器件在衬底上具有叉指电极，其中通过以切割角切割由化学式La3Ta0.5Ga5.5O14（LTG）表示的单晶而获得衬底。 SAW沿着衬底的切割角度和传播方向被优化，使得衬底可以具有低的SAW速度和增加的机电耦合常数。 由此，能够减小SAW器件的尺寸，扩大作为滤波器的通带宽度，特别是作为移动通信终端的中频用SAW滤波器提供令人满意的特性。 SAW器件具有最小的损耗，因为SAW能量集中在传播方向。

公开(公告)号：US06246149B1

公开(公告)日：2001-06-12

申请号：US09395103

申请日：1999-09-14

申请人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

发明人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

IPC分类号： H01L4104

CPC分类号： H03H9/02543 ,  C30B29/34 ,  C30B33/00

摘要： A surface acoustic wave device has a piezoelectric substrate whose properties include electromechanical coupling coefficient advantageous to widening passband width and SAW velocity advantageous to achieving a compact surface acoustic wave device. The piezoelectric substrate is composed of the single crystal represented by chemical formula Sr3TaGa3Si2O14 belonging to point group 32. For example, cut angle of the single crystal and propagation direction of the surface acoustic wave are in region 1-1, wherein said region 1-1 represented by Euler angles (&phgr;, &thgr;, &psgr;) satisfies &phgr;=25° ˜35°, &thgr;=20° ˜90°, &psgr;=−40° ˜40°. These angles may be in range 1-2, wherein said range 1-2 satisfies &phgr;=25° ˜35°, &thgr;=20° ˜90°, &psgr;=−25° ˜25°.

摘要翻译： 表面声波装置具有压电基板，其特性包括有利于扩大通带宽度和SAW速度的机电耦合系数，有利于实现紧凑的声表面波装置。 压电基板由属于点组32的化学式Sr 3 Ta Ga 3 Si 2 O 14表示的单晶构成。例如，单晶的切割角和声表面波的传播方向在区域1-1中，其中所述区域1-1 由欧拉角（phi，θ，psi）表示，满足phi = 25°〜35°，θ= 20°〜90°，psi = -40°〜40°。 这些角度可以在1-2范围内，其中所述范围1-2满足phi = 25°〜35°，θ= 20°〜90°，psi = -25°〜25°。