公开(公告)号：US08742153B2

公开(公告)日：2014-06-03

申请号：US13504573

申请日：2010-11-29

申请人： Atsushi Maniwa ,  Noriaki Oshima ,  Kazuhisa Kawano ,  Taishi Furukawa ,  Hirokazu Chiba ,  Toshiki Yamamoto

发明人： Atsushi Maniwa ,  Noriaki Oshima ,  Kazuhisa Kawano ,  Taishi Furukawa ,  Hirokazu Chiba ,  Toshiki Yamamoto

IPC分类号： C07F17/02 ,  C23C16/18 ,  H01L21/316

CPC分类号： C07F17/02 ,  C23C16/18 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/31695 ,  H01L21/32051 ,  H01L29/4966

摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

摘要翻译： 为了通过CVD法形成质量好的薄钌膜，需要在低温下形成薄膜。 因此，需要具有高热反应性的钌化合物。 本发明涉及以含有（2,4-二甲基戊二烯基）（乙基 - 环戊二烯基）钌和双（2,4-二甲基戊二烯基）钌的钌络合物混合物为原料的CVD等制造含钌膜的方法， 二甲基戊二烯基）钌，后者化合物的量为（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌的重量为0.1〜100重量％。

公开(公告)号：US20120227625A1

公开(公告)日：2012-09-13

申请号：US13504573

申请日：2010-11-29

申请人： Atsushi Maniwa ,  Noriaki Oshima ,  Kazuhisa Kawano ,  Taishi Furukawa ,  Hirokazu Chiba ,  Toshiki Yamamoto

发明人： Atsushi Maniwa ,  Noriaki Oshima ,  Kazuhisa Kawano ,  Taishi Furukawa ,  Hirokazu Chiba ,  Toshiki Yamamoto

IPC分类号： C07F15/00

CPC分类号： C07F17/02 ,  C23C16/18 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/31695 ,  H01L21/32051 ,  H01L29/4966

摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

摘要翻译： 为了通过CVD法形成质量好的薄钌膜，需要在低温下形成薄膜。 因此，需要具有高热反应性的钌化合物。 本发明涉及以含有（2,4-二甲基戊二烯基）（乙基 - 环戊二烯基）钌和双（2,4-二甲基戊二烯基）钌的钌络合物混合物为原料的CVD等制造含钌膜的方法， 二甲基戊二烯基）钌，后者化合物的量为（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌的重量为0.1〜100重量％。

公开(公告)号：US20120029220A1

公开(公告)日：2012-02-02

申请号：US12996690

申请日：2009-06-12

申请人： Ken-ichi Tada ,  Toshiki Yamamoto ,  Hirokazu Chiba ,  Kohei Iwanaga ,  Atsushi Maniwa ,  Tadahiro Yotsuya ,  Noriaki Oshima

发明人： Ken-ichi Tada ,  Toshiki Yamamoto ,  Hirokazu Chiba ,  Kohei Iwanaga ,  Atsushi Maniwa ,  Tadahiro Yotsuya ,  Noriaki Oshima

IPC分类号： C07F7/28

CPC分类号： H01L21/28556 ,  B01J21/063 ,  B01J31/1805 ,  B01J35/004 ,  B01J2531/46 ,  C07C209/54 ,  C07C209/66 ,  C07C211/65 ,  C07C251/08 ,  C07F7/003 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02186 ,  H01L21/02271

摘要： A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein R1 and R4 each independently represent an alkyl group having 1-16 carbon atoms; R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and R5 represents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.

摘要翻译： 本发明的主题是提供具有高蒸气压和高热稳定性的新型钛络合物，并且通过诸如CVD法或ALD法的技术制造含钛薄膜的优异材料，并进一步提供 用于制备这些络合物的方法，由络合物制备的含钛薄膜以及薄膜的制造方法。 本发明涉及制备由通式（1）表示的钛络合物：（其中R 1和R 4各自独立地表示具有1-16个碳原子的烷基; R 2和R 3各自独立地表示氢原子或具有1- 3个碳原子; R5表示具有1-16个碳原子并且可以被一个或多个氟原子取代的烷基），并使用该络合物制备含钛薄膜。

公开(公告)号：US08779174B2

公开(公告)日：2014-07-15

申请号：US12996690

申请日：2009-06-12

申请人： Ken-ichi Tada ,  Toshiki Yamamoto ,  Hirokazu Chiba ,  Kohei Iwanaga ,  Atsushi Maniwa ,  Tadahiro Yotsuya ,  Noriaki Oshima

发明人： Ken-ichi Tada ,  Toshiki Yamamoto ,  Hirokazu Chiba ,  Kohei Iwanaga ,  Atsushi Maniwa ,  Tadahiro Yotsuya ,  Noriaki Oshima

IPC分类号： C07F7/28

CPC分类号： H01L21/28556 ,  B01J21/063 ,  B01J31/1805 ,  B01J35/004 ,  B01J2531/46 ,  C07C209/54 ,  C07C209/66 ,  C07C211/65 ,  C07C251/08 ,  C07F7/003 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02186 ,  H01L21/02271

摘要： A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein R1 and R4 each independently represent an alkyl group having 1-16 carbon atoms; R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and R5 represents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.

摘要翻译： 本发明的主题是提供具有高蒸气压和高热稳定性的新型钛络合物，并且通过诸如CVD法或ALD法的技术制造含钛薄膜的优异材料，并进一步提供 用于制备这些络合物的方法，由络合物制备的含钛薄膜以及薄膜的制造方法。 本发明涉及制备由通式（1）表示的钛络合物：（其中R 1和R 4各自独立地表示具有1-16个碳原子的烷基; R 2和R 3各自独立地表示氢原子或具有1- 3个碳原子; R5表示具有1-16个碳原子并且可以被一个或多个氟原子取代的烷基），并使用该络合物制备含钛薄膜。

公开(公告)号：US09120825B2

公开(公告)日：2015-09-01

申请号：US13702723

申请日：2011-05-30

申请人： Ken-ichi Tada ,  Kohei Iwanaga ,  Toshiki Yamamoto ,  Atsushi Maniwa

发明人： Ken-ichi Tada ,  Kohei Iwanaga ,  Toshiki Yamamoto ,  Atsushi Maniwa

IPC分类号： C07F7/00 ,  C07F7/02 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02

CPC分类号： C07F7/025 ,  C23C16/345 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271

摘要： This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500° C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1′) by reacting a chlorosilane derivative (3) with a compound M2Z (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material. In the formulae, R1, R2 are defined in the specification.

摘要翻译： 本发明的目的在于提供一种可以在不使用等离子体等的情况下在500℃以下的低温下有效地制造含硅薄膜的材料。 本发明涉及通过氯硅烷衍生物（3）与化合物M2Z（4）反应制备由通式（1'）表示的氢硅烷衍生物，并通过使用氢硅烷衍生物作为原料制备含硅薄膜。 在该式中，R1，R2在说明书中定义。

公开(公告)号：US20130123528A1

公开(公告)日：2013-05-16

申请号：US13702723

申请日：2011-05-30

申请人： Ken-ichi Tada ,  Kohei Iwanaga ,  Toshiki Yamamoto ,  Atsushi Maniwa

发明人： Ken-ichi Tada ,  Kohei Iwanaga ,  Toshiki Yamamoto ,  Atsushi Maniwa

IPC分类号： C07F7/02

CPC分类号： C07F7/025 ,  C23C16/345 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271

摘要： This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500° C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1′) by reacting a chlorosilane derivative (3) with a compound M2Z (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material. In the formulae, R1, R2 are defined in the specification.

摘要翻译： 本发明的目的在于提供一种可以在不使用等离子体等的情况下在500℃以下的低温下有效地制造含硅薄膜的材料。 本发明涉及通过氯硅烷衍生物（3）与化合物M2Z（4）反应制备由通式（1'）表示的氢硅烷衍生物，并通过使用氢硅烷衍生物作为原料制备含硅薄膜。 在该式中，R1，R2在说明书中定义。