公开(公告)号：US20060217830A1

公开(公告)日：2006-09-28

申请号：US11444454

申请日：2006-06-01

申请人： Kazuo Saki ,  Yukihiro Ushiku

发明人： Kazuo Saki ,  Yukihiro Ushiku

IPC分类号： G06F19/00

CPC分类号： H01L21/67276 ,  C23C16/52 ,  C23C16/54

摘要： A semiconductor manufacturing apparatus includes a processing apparatus main body which executes a process related to manufacturing a semiconductor device, an internal apparatus controller which supplies a start signal to start a process and a stop signal to stop the process of the semiconductor device within the processing apparatus main body, and a process controller which calculates a physical characteristic of the semiconductor device currently being processed and sends the stop signal to the apparatus controller when a calculated value reaches a predetermined value.

摘要翻译： 半导体制造装置包括执行与制造半导体装置有关的处理的处理装置主体，提供开始处理的起始信号的内部装置控制器和停止处理装置内的半导体装置的处理的停止信号 主体和计算当前处理的半导体器件的物理特性的处理控制器，当计算值达到预定值时，将该停止信号发送给设备控制器。

公开(公告)号：US07082346B2

公开(公告)日：2006-07-25

申请号：US10457353

申请日：2003-06-10

申请人： Kazuo Saki ,  Yukihiro Ushiku

发明人： Kazuo Saki ,  Yukihiro Ushiku

IPC分类号： G06F19/00

CPC分类号： H01L21/67276 ,  C23C16/52 ,  C23C16/54

摘要： A semiconductor manufacturing apparatus which continuously executes oxidation and CVD in a multiprocess apparatus includes an internal apparatus controller which selects the type of process and supplies a start signal and stop signal for the process to the multiprocess apparatus, and a process controller which calculates the process state for each process on the basis of the internal information of the apparatus. Upon receiving the stop signal from the controller, the controller sends the stop signal to the multiprocess apparatus to stop the current process by the multiprocess apparatus and switches to the next process.

摘要翻译： 一种在多处理装置中连续执行氧化和CVD的半导体制造装置，具有：内部装置控制器，其选择所述处理的种类，并向所述多处理装置供给所述处理的起始信号和停止信号;以及处理控制器， 根据设备的内部信息为每个过程。 在从控制器接收到停止信号时，控制器向多处理装置发送停止信号，以停止多处理装置的当前进程并切换到下一个进程。

公开(公告)号：US07324855B2

公开(公告)日：2008-01-29

申请号：US11217592

申请日：2005-09-02

申请人： Yukihiro Ushiku ,  Hidenori Kakinuma ,  Tsutomu Miki ,  Junji Sugamoto ,  Akira Ogawa ,  Yoshinori Ookawauchi ,  Giichi Inoue ,  Tomomi Ino

发明人： Yukihiro Ushiku ,  Hidenori Kakinuma ,  Tsutomu Miki ,  Junji Sugamoto ,  Akira Ogawa ,  Yoshinori Ookawauchi ,  Giichi Inoue ,  Tomomi Ino

IPC分类号： G06F19/00

CPC分类号： G05B19/41865 ,  G05B2219/31372 ,  G05B2219/31395 ,  G05B2219/31455 ,  G06Q30/0283 ,  Y02P90/12 ,  Y02P90/18 ,  Y02P90/20

摘要： A process-state management system encompasses: a plurality of production machines; a control server configured to collectively control at least part of the production machines; a management server including a data-linking module configured to link operation-management data of the production machines with corresponding management information transmitted from the control server, respectively, the management server analyze the operation-management data linked with the management information with a common analysis application; and a management database configured to store the operation-management data linked with the management information.

摘要翻译： 过程状态管理系统包括：多个生产机器; 控制服务器，其被配置为共同控制所述生产机器的至少一部分; 管理服务器，其包括分别将生产机的运行管理数据与从控制服务器发送的相应的管理信息相连接的数据链接模块，所述管理服务器分析与所述管理信息相关联的运行管理数据， 应用; 以及管理数据库，被配置为存储与管理信息相关联的操作管理数据。

公开(公告)号：US20060281281A1

公开(公告)日：2006-12-14

申请号：US11444301

申请日：2006-06-01

申请人： Katsujiro Tanzawa ,  Norihiko Tsuchiya ,  Junji Sugamoto ,  Yukihiro Ushiku

发明人： Katsujiro Tanzawa ,  Norihiko Tsuchiya ,  Junji Sugamoto ,  Yukihiro Ushiku

IPC分类号： H01L21/66 ,  H01L21/30

CPC分类号： H01L22/12 ,  G01N21/9501

摘要： A method of inspecting a semiconductor wafer, comprises removing a device structure film on the semiconductor wafer with a chemical solution to expose a crystal surface of the semiconductor wafer; coating a protected area, which is a part of the crystal surface of the semiconductor wafer, with a mask material for protecting the crystal surface of the semiconductor wafer; etching the semiconductor wafer selectively, thereby making a crystal defect in a non-protected area, which is a part of the crystal surface of the semiconductor wafer that is not coated with the mask material, appear after the crystal surface is coated with the mask material; removing the mask material after the selective etching; carrying out quantitative measurement of the protected area and the non-protected area using an optical defect inspection apparatus or a beam-type defect inspection apparatus; and calculating the number of crystal defects of the semiconductor wafer base on the result of the measurement.

公开(公告)号：US20060085165A1

公开(公告)日：2006-04-20

申请号：US11236719

申请日：2005-09-28

申请人： Yukihiro Ushiku ,  Tomomi Ino

发明人： Yukihiro Ushiku ,  Tomomi Ino

IPC分类号： G06F11/30

CPC分类号： G05B23/024

摘要： A method for determining a failure of a manufacturing condition, includes creating waveforms implemented by respective first data strings of first characteristic variables corresponding to operation parameter data of manufacturing apparatuses which execute manufacturing processes of products under respective manufacturing conditions for the products; classifying the first data strings that are analogous to each other into groups based on a correlation of the waveforms; creating a first visualized data table visualizing magnitude correlations between the first characteristic variables for each of the groups; adding second data strings of second characteristic variables to the groups, the second characteristic variables corresponding to workmanship data representing measurement and inspection results of the products; and creating a second visualized data table visualizing magnitude correlations between the second characteristic variables for each of the groups.

摘要翻译： 一种用于确定制造条件故障的方法，包括：通过对与产品的相应制造条件下执行产品的制造过程的制造装置的操作参数数据相对应的第一特征变量的各个第一数据串实现的波形; 基于波形的相关性将彼此类似的第一数据串分组成组; 创建第一可视化数据表可视化每个组的第一特征变量之间的幅度相关性; 将第二特征变量的第二数据串添加到组中，对应于表示产品的测量和检查结果的工艺数据的第二特征变量; 以及创建第二可视化数据表，其可视化每个组的第二特征变量之间的幅度相关性。

公开(公告)号：US5844278A

公开(公告)日：1998-12-01

申请号：US527636

申请日：1995-09-13

申请人： Tomohisa Mizuno ,  Yukihiro Ushiku ,  Makoto Yoshimi ,  Mamoru Terauchi ,  Shigeru Kawanaka

发明人： Tomohisa Mizuno ,  Yukihiro Ushiku ,  Makoto Yoshimi ,  Mamoru Terauchi ,  Shigeru Kawanaka

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L29/66575 ,  H01L29/1083 ,  H01L29/41725 ,  H01L29/4983 ,  H01L29/66795 ,  H01L29/7851

摘要： The present invention provides a semiconductor device which includes a substrate having a projection-shaped semiconductor element region, a gate electrode formed through a gate insulating film on the upper face and side face of the element region, and a first conductivity type source region and drain region provided in a manner to form a channel region on the upper face of the element region across the gate electrode, and which has a high concentration impurity region containing a second conductivity type impurity at a concentration higher than that on the surface of the channel region in the central part of the projection-shaped semiconductor element region.

摘要翻译： 本发明提供一种半导体器件，其包括具有突起状半导体元件区域的基板，通过在元件区域的上表面和侧面上的栅极绝缘膜形成的栅电极，以及第一导电型源极区域和漏极 该区域以跨越该栅电极的该元件区域的上表面上形成沟道区域的方式设置，并且具有含有比沟道区域表面上的浓度高的第二导电型杂质的高浓度杂质区域 在突起状半导体元件区域的中央部。

公开(公告)号：US5434440A

公开(公告)日：1995-07-18

申请号：US68529

申请日：1993-05-28

申请人： Takashi Yoshitomi ,  Masanobu Saito ,  Hisayo Momose ,  Hiroshi Iwai ,  Yukihiro Ushiku ,  Mizuki Ono ,  Yasushi Akasaka ,  Hideaki Nii ,  Satoshi Matsuda ,  Yasuhiro Katsumata

发明人： Takashi Yoshitomi ,  Masanobu Saito ,  Hisayo Momose ,  Hiroshi Iwai ,  Yukihiro Ushiku ,  Mizuki Ono ,  Yasushi Akasaka ,  Hideaki Nii ,  Satoshi Matsuda ,  Yasuhiro Katsumata

IPC分类号： H01L21/033 ,  H01L21/225 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L29/6659 ,  H01L21/0338 ,  H01L21/2255 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823814 ,  H01L27/0928 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/42376 ,  H01L29/66492 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/7833 ,  Y10S257/90 ,  Y10S438/965

摘要： A diffused layer serves as a source and a drain. It is formed comprised of a deep first diffused layer and a shallow second diffused layer positioned between the first diffused layer and the channel region. In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5.times.10.sup.18 cm.sup.-3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 .mu.m. Since the second diffused layer has a high concentration, the short-channel effect can be suppressed. As the second diffused region, a solid phase diffusion source such as an impurity doped silicate glass is used.

摘要翻译： 扩散层用作源极和漏极。 其形成包括位于第一扩散层和沟道区之间的深第一扩散层和浅第二扩散层。 在第二扩散区域中，载流子深度方向的分布具有在峰值处浓度大于5×10 18 cm -3的轮廓，并且与深度小于0.04μm的半导体衬底的载流子浓度相对应 m。 由于第二扩散层具有高浓度，所以可以抑制短沟道效应。 作为第二扩散区域，使用诸如杂质掺杂硅酸盐玻璃的固相扩散源。

公开(公告)号：US07531462B2

公开(公告)日：2009-05-12

申请号：US11444301

申请日：2006-06-01

申请人： Katsujiro Tanzawa ,  Norihiko Tsuchiya ,  Junji Sugamoto ,  Yukihiro Ushiku

发明人： Katsujiro Tanzawa ,  Norihiko Tsuchiya ,  Junji Sugamoto ,  Yukihiro Ushiku

IPC分类号： H01L21/302

CPC分类号： H01L22/12 ,  G01N21/9501

摘要： A method of inspecting a semiconductor wafer, comprises removing a device structure film on the semiconductor wafer with a chemical solution to expose a crystal surface of the semiconductor wafer; coating a protected area, which is a part of the crystal surface of the semiconductor wafer, with a mask material for protecting the crystal surface of the semiconductor wafer; etching the semiconductor wafer selectively, thereby making a crystal defect in a non-protected area, which is a part of the crystal surface of the semiconductor wafer that is not coated with the mask material, appear after the crystal surface is coated with the mask material; removing the mask material after the selective etching; carrying out quantitative measurement of the protected area and the non-protected area using an optical defect inspection apparatus or a beam-type defect inspection apparatus; and calculating the number of crystal defects of the semiconductor wafer base on the result of the measurement.

摘要翻译： 一种检查半导体晶片的方法，包括用化学溶液去除半导体晶片上的器件结构膜以暴露半导体晶片的晶体表面; 用保护半导体晶片的晶体表面的掩模材料涂覆作为半导体晶片的晶体表面的一部分的保护区域; 选择性地蚀刻半导体晶片，从而在未涂覆有掩模材料的半导体晶片的晶体表面的一部分的非保护区域中出现晶体缺陷，在晶体表面涂覆有掩模材料之后 ; 在选择性蚀刻之后去除掩模材料; 使用光学缺陷检查装置或光束型缺陷检查装置进行保护区域和非保护区域的定量测量; 并根据测量结果计算半导体晶片基底的晶体缺陷数。

公开(公告)号：US07529634B2

公开(公告)日：2009-05-05

申请号：US10999938

申请日：2004-12-01

申请人： Kunihiro Mitsutake ,  Yukihiro Ushiku

发明人： Kunihiro Mitsutake ,  Yukihiro Ushiku

IPC分类号： G01R31/00

CPC分类号： H01L22/20 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/00

摘要： A method of searching for clustering faults is employed for semiconductor device manufacturing. The method enters data on faults present in a search target, calculates a frequency distribution of the faults in unit cells divided from the search target, approximates the frequency distribution by overlaying at least two discrete distribution functions, and searches for clustering faults according to weights of the discrete distribution functions on the frequency distribution.

摘要翻译： 半导体器件制造采用搜索聚类故障的方法。 该方法输入搜索目标中存在的故障的数据，计算从搜索目标划分的单位单元中的故障的频率分布，通过叠加至少两个离散分布函数近似频率分布，并根据 离散分布函数在频率分布上。

公开(公告)号：US07222026B2

公开(公告)日：2007-05-22

申请号：US10107297

申请日：2002-03-28

申请人： Hiroshi Matsushita ,  Kunihiro Mitsutake ,  Yukihiro Ushiku

发明人： Hiroshi Matsushita ,  Kunihiro Mitsutake ,  Yukihiro Ushiku

IPC分类号： G01B5/28

CPC分类号： G01N21/95607 ,  G01R31/2831

摘要： An equipment for detecting faults in semiconductor integrated circuits includes a fault input unit to input fault information for the integrated circuits formed on a semiconductor wafer, a superimposing unit to superimpose the fault information with repeating units within the surface of the semiconductor wafer, and a first characteristic factor calculation unit to calculate a first characteristic factor showing a degree to which faults are repeated every repeating unit.

摘要翻译： 用于检测半导体集成电路中的故障的设备包括：故障输入单元，用于输入形成在半导体晶片上的集成电路的故障信息;叠加单元，用于在半导体晶片的表面内叠加具有重复单元的故障信息;以及第一 特征因子计算单元，计算表示每个重复单元重复故障的程度的第一特征因子。