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14 条记录 (耗时 0.012 秒)

    Zinc-alkaline battery
    2.
    发明授权
    Zinc-alkaline battery 失效
    锌碱电池

    公开(公告)号：US4861688A

    公开(公告)日：1989-08-29

    申请号：US29343

    申请日：1987-03-19

    申请人： Akira Miura ,  Kanji Takata ,  Ryoji Okazaki ,  Toyohide Uemura ,  Keiichi Kagawa

    发明人： Akira Miura ,  Kanji Takata ,  Ryoji Okazaki ,  Toyohide Uemura ,  Keiichi Kagawa

    IPC分类号： C22C18/00 ,  H01M4/42

    CPC分类号： C22C18/00 ,  H01M4/42

    摘要： This invention uses as the anode active material a zinc alloy containing Ni, at least one element selected from In, Pb, Ga and Cd and, optionally further, one element selected from Al, Mg, Ca, Ba and Sr for the anode of a conventional zinc-alkaline battery which employs zinc as the anode active material, aqueous alkaline solution as the electrolyte, and manganese dioxide, silver oxide, oxygen and so forth as the cathode active material. The use of such zinc alloy permits the reduction of the amount of mercury to be used for amalgamation of the anode zinc surface which is made for the purpose of corrosion inhibition, thereby enabling the provision of a low-pollution zinc-alkaline battery.

    摘要翻译： 本发明使用含有Ni，选自In，Pb，Ga和Cd中的至少一种元素的锌合金以及任选地进一步选自Al，Mg，Ca，Ba和Sr中的一种元素作为阳极活性材料 使用锌作为负极活性物质的常规锌 - 碱性电池，作为电解质的碱性水溶液，作为阴极活性物质的二氧化锰，氧化银，氧等。 使用这种锌合金可以减少用于阳极锌表面的汞合金量，这是为了防腐蚀而制成的，从而能够提供低污染的锌 - 碱性电池。

    Method of making semiconductor devices
    3.
    发明授权
    Method of making semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号：US4465705A

    公开(公告)日：1984-08-14

    申请号：US466142

    申请日：1983-02-14

    申请人： Takeshi Ishihara ,  Keiichi Kagawa

    发明人： Takeshi Ishihara ,  Keiichi Kagawa

    IPC分类号： H01L21/265 ,  H01L21/318 ,  H01L21/32 ,  H01L21/762 ,  H01L21/76

    CPC分类号： H01L21/32 ,  H01L21/26506 ,  H01L21/3185 ,  H01L21/76202

    摘要： A method of masking semiconductor devices provided with selectively formed oxide film patterns, can be made by very precisely copying from selective oxidation mask patterns.The method in accordance with the present invention comprisesa first step of forming an anti-oxidation film pattern in a semiconductor body, with at least brim portions of said anti-oxidation film pattern buried therein, anda second step of oxidizing regions on a surface of said semiconductor body to form oxidized regions by use of said anti-oxidation film pattern as a selective oxidation mask, thereby forming at least a part of said oxidized regions of said semiconductor body in a manner to have their bottom disposed deeper than that of said anti-oxidation film pattern in said semiconductor body.

    摘要翻译： 可以通过从选择性氧化掩模图案非常精确地复制来制造设置有选择性地形成的氧化物膜图案的半导体器件的掩模的方法。 根据本发明的方法包括在半导体本体中形成抗氧化膜图案的第一步骤，其中至少掩埋有所述抗氧化膜图案的边缘部分，以及在表面上氧化区域的第二步骤 通过使用所述抗氧化膜图案作为选择性氧化掩模形成氧化区域，从而以使其底部比所述半导体本体的底部更深的方式形成所述半导体本体的所述氧化区域的至少一部分 所述半导体本体中的抗氧化膜图案。

    Method of disposing of a waste optical disc
    5.
    发明授权
    Method of disposing of a waste optical disc 失效
    废弃光盘的处理方法

    公开(公告)号：US06569259B1

    公开(公告)日：2003-05-27

    申请号：US09701483

    申请日：2000-11-29

    申请人： Keiichi Kagawa

    发明人： Keiichi Kagawa

    IPC分类号： B08B704

    CPC分类号： B29B17/0412 ,  B29B17/02 ,  B29B2017/0428 ,  B29B2017/044 ,  B29K2033/04 ,  B29K2705/02 ,  B29L2017/005 ,  G11B7/26 ,  G11B23/505 ,  Y02W30/521 ,  Y02W30/622 ,  Y02W30/625 ,  Y10T156/1184

    摘要： A disposal method of a waste optical disc is useful when a substrate material is collected from the disc. A space is created between a recording layer and a reflective layer between both of which there exists the smallest mutual adhesion by cutting a surface of a protective layer side of an optical disc. Then, the reflective layer and the protective layer are peeled off and removed from the optical disc by introducing air into the space therebetween. Then, the recorded layer remaining on a substrate layer can be removed by cutting.

    摘要翻译： 当从盘收集基板材料时，废光盘的处置方法是有用的。 通过切割光盘的保护层侧的表面，在记录层和反射层之间产生间隔，两者之间存在最小的相互粘附。 然后，通过将空气引入到它们之间的空间中，将光反射层和保护层从光盘上剥离掉。 然后，可以通过切割去除残留在基底层上的记录层。

    Method of fabricating a CMOS semiconductor devices
    8.
    发明授权
    Method of fabricating a CMOS semiconductor devices 失效
    制造CMOS半导体器件的方法

    公开(公告)号：US5273914A

    公开(公告)日：1993-12-28

    申请号：US900743

    申请日：1992-06-19

    申请人： Akio Miyajima ,  Keiichi Kagawa ,  Akihira Shinohara ,  Kiyoyuki Morita ,  Takashi Uehara

    发明人： Akio Miyajima ,  Keiichi Kagawa ,  Akihira Shinohara ,  Kiyoyuki Morita ,  Takashi Uehara

    IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/266

    CPC分类号： H01L29/6659 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/0928 ,  Y10S148/015

    摘要： An ion implantation stopper is formed on a gate electrode extending on a substrate. When ions are implanted into the substrate to form an LDD layer or source and drain regions in the substrate, the stopper functions to prevent the gate electrode from being exposed to ion implantation. The prevention of the exposure of the gate electrode to the ion implantation ensures the prevention of channeling in the gate electrode. The invention includes forming a first protective film on the gate of an NMOS, implanting to form LDD region for the NMOS, implanting to form source and drain regions of a PMOS, forming a second protective film on the gate of the NMOS, implanting to form source and drain regions of the NMOS, the first and second protective films prevent the gate electrode of the NMOS from being exposed to ion implantation during the respective implanting steps so that channeling is prevented from occurring in the gate electrode of the NMOS.

    摘要翻译： 在基板上延伸的栅电极上形成离子注入阻挡层。 当将离子注入到衬底中以在衬底中形成LDD层或源极和漏极区域时，阻挡层用于防止栅电极暴露于离子注入。 防止栅电极暴露于离子注入确保防止栅电极中的沟道化。 本发明包括在NMOS的栅极上形成第一保护膜，注入以形成用于NMOS的LDD区，注入以形成PMOS的源极和漏极区，在NMOS的栅极上形成第二保护膜，以形成 源极和漏极区域中，第一和第二保护膜防止NMOS的栅电极在相应的注入步骤期间暴露于离子注入，从而防止在NMOS的栅电极中发生沟道化。