公开(公告)号：US08652864B2

公开(公告)日：2014-02-18

申请号：US12903945

申请日：2010-10-13

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L21/00

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

公开(公告)号：US08605183B2

公开(公告)日：2013-12-10

申请号：US12614967

申请日：2009-11-09

申请人： Takuji Matsumoto ,  Keiji Tatani ,  Tetsuji Yamaguchi ,  Masashi Nakata

发明人： Takuji Matsumoto ,  Keiji Tatani ,  Tetsuji Yamaguchi ,  Masashi Nakata

IPC分类号： H04N3/147 ,  H04N5/335

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

摘要： A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

公开(公告)号：US08115154B2

公开(公告)日：2012-02-14

申请号：US12509990

申请日：2009-07-27

申请人： Takuji Matsumoto ,  Tetsuji Yamaguchi ,  Keiji Tatani ,  Yutaka Nishimura ,  Kazuichiro Itonaga ,  Hiroyuki Mori ,  Norihiro Kubo ,  Fumihiko Koga ,  Shinichiro Izawa ,  Susumu Ooki

发明人： Takuji Matsumoto ,  Tetsuji Yamaguchi ,  Keiji Tatani ,  Yutaka Nishimura ,  Kazuichiro Itonaga ,  Hiroyuki Mori ,  Norihiro Kubo ,  Fumihiko Koga ,  Shinichiro Izawa ,  Susumu Ooki

IPC分类号： H01L27/00 ,  H01L31/112 ,  H01L21/28

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14643

摘要： A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.

摘要翻译： 固态成像装置包括：半导体衬底，包括具有光电转换部分和外围电路部分的像素部分; 第一侧壁，其由侧壁膜构成，并且设置在像素部中的MOS晶体管的栅电极的每个侧壁上; 由所述侧壁膜构成并设置在所述外围电路部的MOS晶体管的栅电极的各侧壁上的第二侧壁; 由所述侧壁膜构成的第一硅化物阻挡膜，设置在所述光电转换部分和所述像素部分中的所述MOS晶体管的一部分; 以及第二硅化物阻挡膜，设置在像素部分中的MOS晶体管上，以与第一硅化物阻挡膜的一部分重叠，其中像素部分中的MOS晶体管被第一和第二硅化物阻挡膜覆盖。

公开(公告)号：US20110269259A1

公开(公告)日：2011-11-03

申请号：US13178624

申请日：2011-07-08

申请人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

发明人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC分类号： H01L31/02

CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14831

摘要： A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

摘要翻译： 一种固体摄像器件，包括像素部分，外围电路部分，在外围电路部分中的半导体衬底上形成有STI结构的第一隔离区域和在半导体衬底上形成有STI结构的第二隔离区域 在像素部分。 埋在半导体衬底中的第二隔离区的部分比第一隔离区的半导体衬底的部分浅，第二隔离区的上表面的高度等于第一隔离区的高度。 还公开了制造固态成像装置的方法和设置有固态成像装置的电子装置。

公开(公告)号：US20110180859A1

公开(公告)日：2011-07-28

申请号：US12926878

申请日：2010-12-15

申请人： Keiji Tatani

发明人： Keiji Tatani

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14605 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14689

摘要： A semiconductor device includes a gate electrode formed on a substrate with a gate insulating layer in between, an insulating layer of property and thickness that allow for a silicide block formed in a first region of the substrate so as to cover the gate electrode, a sidewall formed to at least partly include the insulating layer at a side of the gate electrode, a first impurity region formed by implantation of a first impurity in a peripheral region of the gate electrode formed in the first region of the substrate before the insulating layer is formed, a second impurity region formed by implantation of a second impurity in a peripheral region of the sidewall of the gate electrode formed in a second region of the substrate after the sidewall is formed, and a silicide layer formed on a surface of the second impurity region of the substrate.

摘要翻译： 半导体器件包括形成在其上的栅极绝缘层的衬底上的栅电极，具有允许形成在衬底的第一区域中的硅化物块以覆盖栅电极的特性和厚度的绝缘层，侧壁 形成为至少部分地包括在栅电极的一侧的绝缘层，在形成绝缘层之前，在形成在基板的第一区域中的栅电极的周边区域中注入第一杂质而形成的第一杂质区 通过在形成在侧壁的第二区域中的栅电极的侧壁的周边区域中注入第二杂质而形成的第二杂质区，以及形成在第二杂质区的表面上的硅化物层 的基底。

公开(公告)号：US20110073923A1

公开(公告)日：2011-03-31

申请号：US12881643

申请日：2010-09-14

申请人： Keiji Tatani ,  Fumihiko Koga ,  Takashi Nagano

发明人： Keiji Tatani ,  Fumihiko Koga ,  Takashi Nagano

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14612 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

摘要： A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.

摘要翻译： 固体摄像器件包括第一导电型半导体阱区，多个像素，每个像素形成在半导体阱区上，由光电转换部和像素晶体管组成，元件隔离区设置在 像素和像素中的元件隔离区域以及不含绝缘膜的元件隔离区域，并且设置在期望的像素晶体管之间。

公开(公告)号：US07800684B2

公开(公告)日：2010-09-21

申请号：US11745723

申请日：2007-05-08

申请人： Keiji Tatani

发明人： Keiji Tatani

IPC分类号： H04N5/225

CPC分类号： H01L27/14632 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627

摘要： A solid-state image pickup device includes a semiconductor substrate 11, a photoelectric-conversion sensor portion 13 formed on the surface of the semiconductor substrate 11, a pixel area including an effective pixel portion 31 and an optical black portion 32 and a low reflective film 21 with low reflectance of infrared light formed on the back of the substrate 11. The solid-state image pickup device has satisfactory image pickup characteristics by suppressing an optical black optical level of the optical black portion from being fluctuated due to incidence of infrared light.

摘要翻译： 固体摄像装置包括半导体基板11，形成在半导体基板11的表面上的光电转换传感器部分13，包括有效像素部分31和光学黑色部分32的像素区域和低反射膜片 21，其形成在基板11的背面上的红外光的低反射率。固态图像拾取装置通过抑制由于红外光的入射而使光学黑色部分的光学黑色光学水平波动而具有令人满意的图像拾取特性。

公开(公告)号：US07420234B2

公开(公告)日：2008-09-02

申请号：US11318176

申请日：2005-12-23

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L31/0232

CPC分类号： H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

摘要： A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

摘要翻译： 固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素，每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层，其沿着各个电荷累积区域的周边设置在阱区域的表面上，并且将各个像素彼此电隔离; 以及扩散层，其设置在元件隔离层下方，并且将各个像素彼此电隔离，所述扩散层的宽度小于元件隔离层的宽度。 每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

公开(公告)号：US07217961B2

公开(公告)日：2007-05-15

申请号：US11340180

申请日：2006-01-26

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/0328

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US20070069238A1

公开(公告)日：2007-03-29

申请号：US11604490

申请日：2006-11-27

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/00

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.