公开(公告)号：US20100314691A1

公开(公告)日：2010-12-16

申请号：US12456065

申请日：2009-06-10

申请人： Xiangdong Chen ,  Henry Kuo-Shun Chen ,  Kent Charles Oertle ,  Jennifer Chiao

发明人： Xiangdong Chen ,  Henry Kuo-Shun Chen ,  Kent Charles Oertle ,  Jennifer Chiao

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66575 ,  H01L21/26586 ,  H01L29/1045 ,  H01L29/66537 ,  H01L29/78

摘要： According to one embodiment, a method for selective gate halo implantation includes forming at least one gate having a first orientation and at least one gate having a second orientation over a substrate. The method further includes performing a halo implant over the substrate. The first orientation allows a halo implanted area to be formed under the at least one gate having the first orientation and the second orientation prevents a halo implanted area from forming under the at least one gate having the second orientation. The halo implant is performed without forming a mask over the at least one gate having the first orientation or the at least one gate having the second orientation. The at least one gate having the first orientation can be used in a low voltage region of a substrate, while the at least one gate having the second orientation can be used in a high voltage region.

摘要翻译： 根据一个实施例，用于选择性栅极晕晕注入的方法包括在衬底上形成具有第一取向的至少一个栅极和具有第二取向的至少一个栅极。 该方法还包括在衬底上执行晕轮植入。 第一取向允许在具有第一取向的至少一个栅极下方形成光晕注入区域，并且第二取向防止在具有第二取向的至少一个栅极下形成光晕注入区域。 在没有在具有第一取向的至少一个栅极或具有第二取向的至少一个栅极上形成掩模的情况下执行光晕注入。 具有第一取向的至少一个栅极可用于衬底的低电压区域，而具有第二取向的至少一个栅极可用于高电压区域。

公开(公告)号：US08089118B2

公开(公告)日：2012-01-03

申请号：US12456065

申请日：2009-06-10

申请人： Xiangdong Chen ,  Henry Kuo-Shun Chen ,  Kent Charles Oertle ,  Jennifer Chiao

发明人： Xiangdong Chen ,  Henry Kuo-Shun Chen ,  Kent Charles Oertle ,  Jennifer Chiao

IPC分类号： H01L29/788 ,  H01L29/792 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L29/66575 ,  H01L21/26586 ,  H01L29/1045 ,  H01L29/66537 ,  H01L29/78

摘要： According to one embodiment, a method for selective gate halo implantation includes forming at least one gate having a first orientation and at least one gate having a second orientation over a substrate. The method further includes performing a halo implant over the substrate. The first orientation allows a halo implanted area to be formed under the at least one gate having the first orientation and the second orientation prevents a halo implanted area from forming under the at least one gate having the second orientation. The halo implant is performed without forming a mask over the at least one gate having the first orientation or the at least one gate having the second orientation. The at least one gate having the first orientation can be used in a low voltage region of a substrate, while the at least one gate having the second orientation can be used in a high voltage region.

摘要翻译： 根据一个实施例，用于选择性栅极晕晕注入的方法包括在衬底上形成具有第一取向的至少一个栅极和具有第二取向的至少一个栅极。 该方法还包括在衬底上执行晕轮植入。 第一取向允许在具有第一取向的至少一个栅极下方形成光晕注入区域，并且第二取向防止在具有第二取向的至少一个栅极下形成光晕注入区域。 在没有在具有第一取向的至少一个栅极或具有第二取向的至少一个栅极上形成掩模的情况下执行光晕注入。 具有第一取向的至少一个栅极可用于衬底的低电压区域，而具有第二取向的至少一个栅极可用于高电压区域。

公开(公告)号：US20120299187A1

公开(公告)日：2012-11-29

申请号：US13166562

申请日：2011-06-22

申请人： Kent Charles OERTLE ,  Wei Xia ,  Edward Law

发明人： Kent Charles OERTLE ,  Wei Xia ,  Edward Law

IPC分类号： H01L23/485 ,  H01L21/50

CPC分类号： H01L23/3171 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/036 ,  H01L2224/03831 ,  H01L2224/03903 ,  H01L2224/0391 ,  H01L2224/03916 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05541 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2224/05552

摘要： Embodiments of an aluminum pad thinning in bond pad for fine pitch ultra-thick aluminum pad structures are provided herein. Embodiments include a conductive structure formed on a substrate. A first passivation layer is formed over the substrate and the conductive structure, the first passivation layer having an opening formed over the conductive structure. An ultra-thick conductive structure having a thinned trench region formed over the opening of the first passivation layer. The ultra-thick conductive structure is in contact with the conductive structure. A second passivation layer formed over the first passivation region and the ultra-thick conductive structure. The second passivation layer having an opening formed over the thinned trench region of the ultra-thick conductive structure.

摘要翻译： 本文提供了用于细间距超厚铝垫结构的接合垫中的铝垫减薄的实施例。 实施例包括形成在基板上的导电结构。 第一钝化层形成在衬底和导电结构之上，第一钝化层具有形成在导电结构上的开口。 一种超厚导电结构，其具有形成在第一钝化层的开口上的减薄沟槽区。 超厚导电结构与导电结构接触。 形成在第一钝化区域和超厚导电结构上的第二钝化层。 第二钝化层具有形成在超厚导电结构的减薄的沟槽区域上的开口。

公开(公告)号：US20130328158A1

公开(公告)日：2013-12-12

申请号：US13493079

申请日：2012-06-11

申请人： Sumant Ranganathan ,  Kent Charles Oertle ,  Yew Hoong Wan

发明人： Sumant Ranganathan ,  Kent Charles Oertle ,  Yew Hoong Wan

IPC分类号： H01L27/06

CPC分类号： H01L23/585 ,  H01L21/76232 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure includes a substrate layer and a conductive layer connected with the substrate layer. An active circuit is connected with the conductive layer. A seal ring is connected with the conductive layer and separated from the active circuit by an assembly isolation region. An electrical isolation region is positioned in the conductive layer and adjacent to the assembly isolation region, where the electrical isolation region extends to the substrate layer.

摘要翻译： 半导体结构包括衬底层和与衬底层连接的导电层。 有源电路与导电层连接。 密封环与导电层连接，并通过组装隔离区与有源电路分离。 电隔离区域位于导电层中并且邻近组件隔离区域，其中电隔离区域延伸到衬底层。