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    Opto-electronic integrated circuit
    4.
    发明授权
    Opto-electronic integrated circuit 失效
    光电集成电路

    公开(公告)号：US5489798A

    公开(公告)日：1996-02-06

    申请号：US267439

    申请日：1994-06-29

    申请人： Kentaro Doguchi ,  Goro Sasaki ,  Hiroshi Yano ,  Sosaku Sawada

    发明人： Kentaro Doguchi ,  Goro Sasaki ,  Hiroshi Yano ,  Sosaku Sawada

    IPC分类号： H01L27/144 ,  H01L31/0224 ,  H01L29/06 ,  H01L29/78

    CPC分类号： H01L27/1443 ,  H01L31/022416

    摘要： In an opto-electronic integrated circuit of the present invention, in a first surface region of a semiconductor substrate, a pin-type photodiode is constituted on the basis of a photodiode layer formed on a first transistor layer. In a second surface region of the semiconductor substrate, a heterojunction bipolar transistor is constituted on the basis of only a second transistor layer separated form the first transistor layer. Since a plurality of heterojunction bipolar transistors are normally integrated for one pin-type photodiode, the thickness of the heterojunction bipolar transistors larger in number than the pin-type photodiode is set regardless of the thickness of the pin-type photodiode. The thickness of a high-resistance layer in the pin-type photodiode is set with an increased degree of freedom. When the first surface region of the semiconductor substrate is the inner region of a recessed step portion, and the second surface region of the semiconductor substrate is the outer region of the recessed step portion, a difference in thickness between the heterojunction bipolar transistor and the pin-type photodiode is absorbed by the depth of the recessed step portion. For this reason, the pin-type photodiode and the heterojunction bipolar transistor are formed to have almost the same surface level.

    摘要翻译： 在本发明的光电集成电路中，在半导体衬底的第一表面区域中，基于形成在第一晶体管层上的光电二极管层构成针型光电二极管。 在半导体衬底的第二表面区域中，基于仅从第一晶体管层分离的第二晶体管层构成异质结双极晶体管。 由于多个异质结双极晶体管通常集成在一个pin型光电二极管中，所以与pin型光电二极管的厚度无关地设定比pin型光电二极管数量大的异质结双极型晶体管的厚度。 针型光电二极管中的高电阻层的厚度设定为增加的自由度。 当半导体衬底的第一表面区域是凹入阶梯部分的内部区域，并且半导体衬底的第二表面区域是凹陷步骤部分的外部区域时，异质结双极晶体管和引脚之间的厚度差 型光电二极管被凹陷台阶部分的深度吸收。 为此，pin型光电二极管和异质结双极晶体管形成为具有几乎相同的表面水平。

    EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD
    6.
    发明申请
    EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    曝光装置和装置制造方法

    公开(公告)号：US20100141911A1

    公开(公告)日：2010-06-10

    申请号：US12632457

    申请日：2009-12-07

    申请人： Keiji Emoto ,  Yutaka Watanabe ,  Yasuyuki Tamura ,  Noriyasu Hasegawa ,  Kentaro Doguchi ,  Hisashi Namba ,  Keiji Yamashita

    发明人： Keiji Emoto ,  Yutaka Watanabe ,  Yasuyuki Tamura ,  Noriyasu Hasegawa ,  Kentaro Doguchi ,  Hisashi Namba ,  Keiji Yamashita

    IPC分类号： G03B27/52 ,  G03B27/58

    CPC分类号： G03F7/70733 ,  G03F7/70341 ,  G03F7/707

    摘要： An exposure apparatus, exposing a substrate via liquid so as to transfer a pattern of a mask onto the substrate, includes a stage configured to move while holding the substrate. The stage includes a substrate supporting portion on which the substrate is disposed, a supporting surface disposed outside the substrate supporting portion configured to support the liquid together with the substrate, and a frame portion formed so as to surround the supporting surface. The frame portion includes a depression and a member whose top surface is located in a plane including the supporting surface.

    摘要翻译： 曝光装置，通过液体使基板曝光以将掩模的图案转印到基板上，包括配置成在保持基板的同时移动的台。 台架包括：衬底支撑部分，衬底被设置在衬底支撑部分上，支撑表面设置在衬底支撑部分的外部，该衬底支撑部分构造成与衬底一起支撑液体;以及框架部分，形成为围绕支撑表面。 框架部分包括凹部和其顶表面位于包括支撑表面的平面中的构件。

    Pin type light-receiving device, opto electronic conversion circuit, and opto-electronic conversion module
    7.
    发明授权
    Pin type light-receiving device, opto electronic conversion circuit, and opto-electronic conversion module 失效
    针式光接收装置，光电转换电路和光电转换模块

    公开(公告)号：US5712504A

    公开(公告)日：1998-01-27

    申请号：US597448

    申请日：1996-02-02

    申请人： Hiroshi Yano ,  Kentaro Doguchi ,  Sosaku Sawada ,  Takeshi Sekiguchi

    发明人： Hiroshi Yano ,  Kentaro Doguchi ,  Sosaku Sawada ,  Takeshi Sekiguchi

    IPC分类号： H01L27/144 ,  H01L31/105 ,  H01L31/00

    CPC分类号： H01L27/1443 ,  H01L31/105 ,  H01L2224/05554 ,  H01L2224/48137 ,  H01L2924/01004 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/19041

    摘要： A pin type light-receiving device according to the present invention comprises (a) a semiconductor substrate, (b) a first semiconductor layer formed on a semiconductor substrate and doped with an impurity of a first conduction type, (c) a second semiconductor layer formed in a mesa shape on the first semiconductor layer and made of a first semiconductor material without intentionally doping the first semiconductor material with an impurity, (d) a third semiconductor layer formed in a mesa shape on the second semiconductor layer and made of the first semiconductor material doped with an impurity of a second conduction type different from the first conduction type, (e) a first electrode layer formed in ohmic contact on the first semiconductor layer, (f) a second electrode layer formed in ohmic contact on the third semiconductor layer, and (g) a fourth semiconductor layer formed around the first to the third semiconductor layers and made of a second semiconductor material having a band gap energy greater than the first semiconductor material without intentionally doping the second semiconductor material with an impurity. This arrangement can suppress the dark current, based on a reduction of leak current, thereby improving the device characteristics.

    摘要翻译： 根据本发明的针式光接收装置包括（a）半导体衬底，（b）形成在半导体衬底上并掺杂有第一导电类型的杂质的第一半导体层，（c）第二半导体层 在第一半导体层上以台面形状形成并由第一半导体材料制成，而不用杂质有意地掺杂第一半导体材料，（d）在第二半导体层上形成为台面形状的第三半导体层，并由第一半导体材料制成 掺杂有不同于第一导电类型的第二导电类型的杂质的半导体材料，（e）在第一半导体层上以欧姆接触形成的第一电极层，（f）在第三半导体上以欧姆接触形成的第二电极层 层，以及（g）形成在第一至第三半导体层周围的第四半导体层，并由具有带Ga p能量大于第一半导体材料，而不用杂质有意地掺杂第二半导体材料。 这种布置可以基于泄漏电流的减少来抑制暗电流，从而提高器件特性。

    Optical element made of fluoride crystal
    9.
    发明申请
    Optical element made of fluoride crystal 审中-公开
    氟化物晶体制成的光学元件

    公开(公告)号：US20050227849A1

    公开(公告)日：2005-10-13

    申请号：US11133399

    申请日：2005-05-18

    申请人： Kentaro Doguchi

    发明人： Kentaro Doguchi

    IPC分类号： G02B1/02 ,  C01F11/22 ,  C30B11/00 ,  C30B29/12 ,  G02B3/00 ,  C03C3/06

    CPC分类号： C30B11/00 ,  C30B29/12

    摘要： A method for manufacturing fluoride crystal includes the steps of adding scavenger and a material to a crucible, melting the scavenger and material at a temperature higher than a melting point so that a ratio of a thickness of the fluoride crystal that has been melted to an inner diameter of the crucible may be 0.2 or higher, and gradually crystallizing and purifying the material.

    摘要翻译： 氟化物晶体的制造方法包括以下步骤：将清渣剂和材料添加到坩埚中，在高于熔点的温度下使清除剂和材料熔化，使得已经熔化的氟化物晶体的厚度与内部 坩埚的直径可以为0.2以上，逐渐结晶并净化材料。

    EXPOSURE APPARATUS AND DEVICE FABRICATION METHOD
    10.
    发明申请
    EXPOSURE APPARATUS AND DEVICE FABRICATION METHOD 审中-公开
    曝光装置和装置制造方法

    公开(公告)号：US20100097584A1

    公开(公告)日：2010-04-22

    申请号：US12444103

    申请日：2007-12-05

    申请人： Kentaro Doguchi

    发明人： Kentaro Doguchi

    IPC分类号： G03B27/52

    CPC分类号： G03F7/70341

    摘要： An exposure apparatus which exposes a substrate via a liquid supplied between a projection optical system and the substrate, the apparatus comprises a gas supply-recovery mechanism configured to blow a gas around the liquid, wherein the gas supply-recovery mechanism includes a nozzle unit in which a supply port configured to supply the gas, and a recovery port which is arranged nearer to an optical axis of the projection optical system than the supply port and is configured to recover the gas are formed, and wherein the nozzle unit is configured such that a first portion which is adjacent to the supply port and is nearer to the optical axis than the supply port is closer to an image plane of the projection optical system than a second portion which is adjacent to the supply port and is farther from the optical axis than the supply port.

    摘要翻译： 一种曝光装置，其通过在投影光学系统和基板之间供应的液体露出基板，该装置包括：气体供给恢复机构，被配置为将气体吹送到液体周围，其中，气体供给恢复机构包括： 形成供给端口，其构成为供给气体，并且形成了比供给口更靠近投影光学系统的光轴配置并回收气体的回收口，其中，喷嘴单元构成为 与供给口相邻并且比供给口更靠近光轴的第一部分比靠近供给口的第二部分更靠近投影光学系统的像面，并且距离光轴更远 比供应口。