公开(公告)号：US20070217896A1

公开(公告)日：2007-09-20

申请号：US11711124

申请日：2007-02-27

申请人： Ki-Sang Kim ,  Kyue-Sang Choi ,  Byong-Kyu Seo ,  Soon-Chon Park

发明人： Ki-Sang Kim ,  Kyue-Sang Choi ,  Byong-Kyu Seo ,  Soon-Chon Park

IPC分类号： H01L21/677 ,  B66C23/00 ,  B05C13/00

CPC分类号： H01L21/67161 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67766 ,  Y10S414/135

摘要： A substrate treatment apparatus is provided. The substrate treatment apparatus includes a process room, a load port in which a container receiving wafers is disposed, and a wafer transfer module disposed between the load port and the process room to transfer the wafers between the load port and the process room. The wafer transfer module includes a first barrier, a second barrier extending from a first end of the first barrier or from a portion near the first end of the first barrier at a predetermined inclined angle with respect to the first barrier, and a third barrier extending from a second end of the first barrier or from a portion near the second end of the first barrier at a predetermined inclined angle. The load portion is provided along the first barrier. The process room includes a plurality of chambers arranged along the second and third barriers.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括处理室，其中设置有容纳晶片的容器的负载端口和设置在负载端口和处理室之间的晶片传送模块，以在载体端口和处理室之间传送晶片。 晶片传送模块包括第一屏障，从第一屏障的第一端或第一屏障的第一端附近的部分以相对于第一屏障预定的倾斜角延伸的第二屏障，以及第三屏障延伸 从第一屏障的第二端或从第一屏障的第二端附近的部分以预定的倾斜角度。 负载部分沿着第一屏障设置。 处理室包括沿着第二和第三屏障布置的多个室。

公开(公告)号：US07988812B2

公开(公告)日：2011-08-02

申请号：US11711124

申请日：2007-02-27

申请人： Ki-Sang Kim ,  Kyue-Sang Choi ,  Byong-Kyu Seo ,  Soon-Chon Park

发明人： Ki-Sang Kim ,  Kyue-Sang Choi ,  Byong-Kyu Seo ,  Soon-Chon Park

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/67161 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67766 ,  Y10S414/135

摘要： A substrate treatment apparatus is provided. The substrate treatment apparatus includes a process room, a load port in which a container receiving wafers is disposed, and a wafer transfer module disposed between the load port and the process room to transfer the wafers between the load port and the process room. The wafer transfer module includes a first barrier, a second barrier extending from a first end of the first barrier or from a portion near the first end of the first barrier at a predetermined inclined angle with respect to the first barrier, and a third barrier extending from a second end of the first barrier or from a portion near the second end of the first barrier at a predetermined inclined angle. The load portion is provided along the first barrier. The process room includes a plurality of chambers arranged along the second and third barriers.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括处理室，其中设置有容纳晶片的容器的负载端口和设置在负载端口和处理室之间的晶片传送模块，以在载体端口和处理室之间传送晶片。 晶片传送模块包括第一屏障，从第一屏障的第一端或第一屏障的第一端附近的部分以相对于第一屏障预定的倾斜角延伸的第二屏障，以及第三屏障延伸 从第一屏障的第二端或从第一屏障的第二端附近的部分以预定的倾斜角度。 负载部分沿着第一屏障设置。 处理室包括沿着第二和第三屏障布置的多个室。

公开(公告)号：US06991419B2

公开(公告)日：2006-01-31

申请号：US10120477

申请日：2002-04-10

申请人： Ki-Sang Kim

发明人： Ki-Sang Kim

IPC分类号： B66C23/00

CPC分类号： H01L21/68707 ,  B25J18/02 ,  Y10S414/135 ,  Y10S414/141

摘要： The present invention relates to a transfer apparatus for a wafer, in which the wafer may be transferred in a narrow space by reducing a transfer device footprint. The transfer device has a base, a lower arm, an upper arm and a hand. The lower arm is configured to be vertically adjustable and rotatable on a vertical axis. The upper arm is pivotably coupled to the lower arm, and the hand is horizontally coupled to the upper arm.

公开(公告)号：US20050217053A1

公开(公告)日：2005-10-06

申请号：US11015794

申请日：2004-12-20

申请人： Ki-Sang Kim ,  Seung-Ki Chae

发明人： Ki-Sang Kim ,  Seung-Ki Chae

IPC分类号： B25J9/06 ,  B25J9/00 ,  B25J9/04 ,  B25J9/10 ,  B25J17/02 ,  B60S1/02 ,  B65G49/07 ,  H01L21/677 ,  H01L21/68

CPC分类号： H01L21/67742 ,  B25J9/0084 ,  B25J9/042 ,  B25J9/104 ,  H01L21/67745

摘要： A robot arm mechanism includes a housing, upper and lower arms rotatably mounted on the housing, a respective substrate-supporting blade connected to each upper arm, and first, second, third and fourth driving units for rotating the housing, the upper and lower arms and the blade independently of one another. Thus, positions of the blades are readily controlled so that the blades and/or the substrates supported by the blades can be prevented from colliding against the inner wall of the chambers into and from which the substrates are transferred by the robot arm mechanism.

摘要翻译： 一种机器人臂机构包括壳体，可旋转地安装在壳体上的上臂和下臂，连接到每个上臂的相应的基板支撑叶片，以及用于旋转壳体的第一，第二，第三和第四驱动单元，上臂和下臂 和叶片彼此独立。 因此，容易地控制叶片的位置，使得能够防止由叶片支撑的叶片和/或基板与机器人手臂机构进入和移出基板的室的内壁碰撞。

公开(公告)号：US20050220576A1

公开(公告)日：2005-10-06

申请号：US10990249

申请日：2004-11-16

申请人： Ki-Sang Kim ,  Seung-Ki Chae ,  Yun-Sik Yang ,  Seong-Hun Jeon

发明人： Ki-Sang Kim ,  Seung-Ki Chae ,  Yun-Sik Yang ,  Seong-Hun Jeon

IPC分类号： B25J9/06 ,  B65G1/00 ,  B65G49/07 ,  H01L21/677 ,  H01L21/68 ,  H01L21/687

CPC分类号： H01L21/67748 ,  H01L21/68707

摘要： A substrate manufacturing apparatus comprises a transfer chamber, at least one process chamber disposed adjacent to a lateral face of the transfer chamber, and a substrate transfer module including at least two transfer robots which transfer a substrate to the process chamber, the substrate transfer module being disposed at the transfer chamber. Each of the at least two transfer robots comprises a blade including at least two supporters for supporting a substrate, an arm part connected to the blade to move the blade, and an arm driving part for driving the blade and the arm part.

摘要翻译： 基板制造装置包括传送室，与传送室的侧面相邻设置的至少一个处理室，以及包括将基板传送到处理室的至少两个传送机器人的基板传送模块，所述基板传送模块是 设置在传送室。 所述至少两个传送机器人中的每一个包括一个叶片，该叶片包括至少两个用于支撑基板的支撑件，连接到叶片以移动叶片的臂部分和用于驱动叶片和臂部分的臂驱动部分。

公开(公告)号：US20050111936A1

公开(公告)日：2005-05-26

申请号：US10936651

申请日：2004-09-09

申请人： Ki-Sang Kim ,  Seung-Ki Chae ,  In-Ho Lee

发明人： Ki-Sang Kim ,  Seung-Ki Chae ,  In-Ho Lee

IPC分类号： H01L21/3065 ,  B65G1/00

CPC分类号： H01L21/67745 ,  H01L21/67742

摘要： A multi-chamber system includes an index station at which one or more substrate cassettes are placed, a transfer passageway having one end adjacent the index station, at least one process chamber disposed alongside the transfer passageway, and at least one substrate transfer robot disposed in the transfer passageway for receiving a substrate from the index station and by which the substrate is transferred to each process chamber. The multi-chamber system has a minimal footprint. Furthermore, the system can be easily expanded. In addition, the substrate transfer robot(s) may have a blade including two substrate supports so that the time required for moving a substrate through the system is minimized.

摘要翻译： 一个多室系统包括一个索引站，一个或多个基板盒被放置在该索引站上，一个传送通道具有一个与索引站相邻的端部，至少一个处理室与传送通道一起设置，以及至少一个基板传送机器人设置在 所述传送通道用于从所述索引站接收基底，并且将所述基底转移到每个处理室。 多室系统占地面积最小。 此外，系统可以轻松扩展。 此外，基板传送机器人可以具有包括两个基板支撑件的叶片，使得将基板移动通过系统所需的时间被最小化。

公开(公告)号：US09048189B2

公开(公告)日：2015-06-02

申请号：US13044891

申请日：2011-03-10

申请人： Hyun-Su Jun ,  Ki-Sang Kim ,  Seung-Heong Lee ,  Jong-Bum Kim ,  Min-Woung Choi ,  In-Joong Kim

发明人： Hyun-Su Jun ,  Ki-Sang Kim ,  Seung-Heong Lee ,  Jong-Bum Kim ,  Min-Woung Choi ,  In-Joong Kim

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H01L21/3065 ,  H01J37/32091

摘要： Plasma processing methods of a semiconductor manufacturing apparatus which can minimize the amount of impurities adhered to the surface of a wafer, when a desired process using plasma is performed. According to the plasma processing methods of the semiconductor manufacturing apparatus, after the desired process is completed, the plasma generated over the wafer is diffused, and then the wafer is de-chucked.

摘要翻译： 当进行使用等离子体的所需工艺时，可以使附着到晶片表面的杂质的量最小化的半导体制造装置的等离子体处理方法。 根据半导体制造装置的等离子体处理方法，在所需工艺完成之后，在晶片上产生的等离子体扩散，然后晶片脱卡。

公开(公告)号：US07776226B2

公开(公告)日：2010-08-17

申请号：US12512106

申请日：2009-07-30

申请人： Ki-Sang Kim ,  Gyu-Chan Jeoung ,  Gyu-hwan Kwag

发明人： Ki-Sang Kim ,  Gyu-Chan Jeoung ,  Gyu-hwan Kwag

IPC分类号： B44C1/22

CPC分类号： H01L21/67161 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/141

摘要： A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a clean room by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.

摘要翻译： 用于制造半导体器件的蚀刻设备的多室系统通过沿着位于处理室之间的传送路径以多层并联的方式安装多个处理室而在洁净室中占据最小的占地面积。 多层数2至5，并且传输路径可以是矩形形状，并且仅需要比晶片的直径稍宽。 多室系统的总宽度是一个处理室的宽度加上传送路径的宽度之和。

公开(公告)号：US06755221B2

公开(公告)日：2004-06-29

申请号：US10079262

申请日：2002-02-21

申请人： Gyu-Chan Jeong ,  Ki-Sang Kim

发明人： Gyu-Chan Jeong ,  Ki-Sang Kim

IPC分类号： B65B3100

CPC分类号： H01L21/67259 ,  H01L21/68

摘要： A load port of a semiconductor manufacturing apparatus includes a plurality of kinematic coupling pins and a plurality of sensors integrated with the pins. The contacts of the sensors have upper portions that protrude from the pins. Thus, when a cassette is place on the load port, the sensors can reliably sense whether the cassette is resting properly and/or can determine whether the cassette contains wafers. Once such determinations are made in the positive, a command signal is issued that serves to load the wafers into a chamber of the manufacturing apparatus.

公开(公告)号：US20110250758A1

公开(公告)日：2011-10-13

申请号：US13044891

申请日：2011-03-10

申请人： Hyun-Su JUN ,  Ki-Sang Kim ,  Seung-Heong Lee ,  Jong-Bum Kim ,  Min-Woung Choi ,  In-Joong Kim

发明人： Hyun-Su JUN ,  Ki-Sang Kim ,  Seung-Heong Lee ,  Jong-Bum Kim ,  Min-Woung Choi ,  In-Joong Kim

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32091

摘要： Plasma processing methods of a semiconductor manufacturing apparatus which can minimize the amount of impurities adhered to the surface of a wafer, when a desired process using plasma is performed. According to the plasma processing methods of the semiconductor manufacturing apparatus, after the desired process is completed, the plasma generated over the wafer is diffused, and then the wafer is de-chucked.

摘要翻译： 当进行使用等离子体的所需工艺时，可以使附着到晶片表面的杂质的量最小化的半导体制造装置的等离子体处理方法。 根据半导体制造装置的等离子体处理方法，在所需工艺完成之后，在晶片上产生的等离子体扩散，然后晶片脱卡。