公开(公告)号：US20130152853A1

公开(公告)日：2013-06-20

申请号：US13714918

申请日：2012-12-14

申请人： NuFlare Technology, Inc. ,  Central Research Institute of Electric Power Industry ,  Denso Corporation ,  Ayumu ADACHI ,  Koichi NISHIKAWA

发明人： Kunihiko SUZUKI ,  Yuusuke SATO ,  Hideki ITO ,  Hidekazu TSUCHIDA ,  Isaho KAMATA ,  Masahiko ITO ,  Masami NAITO ,  Hiroaki FUJIBAYASHI ,  Ayumu ADACHI ,  Koichi NISHIKAWA

IPC分类号： C30B25/16 ,  C30B25/14

CPC分类号： C30B25/165 ,  C30B25/14

摘要： A film-forming apparatus 100 supplies a plurality of gases toward a substrate 101 in a chamber 103 using a shower plate 124. The shower plate 124 has a plurality of gas flow paths 121 extending within the shower plate along a first face of the substrate 101 side and connected to gas pipes 131 supplying a plurality of gases, and a plurality of gas jetting holes 129 bored such that the plurality of gas flow paths 121 and the chamber 103 communicate with each other on the first face side. In the film-forming apparatus 100, the plurality of gases supplied from the gas pipes 131 to the plurality of gas flow paths 121 of the shower plate 124 are supplied from the gas jetting holes 129 to the substrate 101 without being mixed inside of and vicinity of the shower plate 124.

摘要翻译： 成膜装置100使用淋浴板124向腔室103内的基板101供给多个气体。淋浴板124具有沿着基板101的第一面在喷淋板内延伸的多个气体流路121 并且连接到供应多个气体的气体管道131，以及多个气体喷射孔129，其多个气体流路121和腔室103在第一面侧相互连通。 在成膜装置100中，从气体管131供给到淋浴板124的多个气体流路121的多个气体从气体喷射孔129供给到基板101而不混入内部 的淋浴板124。

公开(公告)号：US20120025153A1

公开(公告)日：2012-02-02

申请号：US13194621

申请日：2011-07-29

申请人： Fusao Hirose ,  Jun Kojima ,  Kazutoshi Kojima ,  Tomohisa Kato ,  Ayumu Adachi ,  Koichi Nishikawa

发明人： Fusao Hirose ,  Jun Kojima ,  Kazutoshi Kojima ,  Tomohisa Kato ,  Ayumu Adachi ,  Koichi Nishikawa

IPC分类号： H01B1/04 ,  C30B23/02

CPC分类号： H01B1/04 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  C30B31/00

摘要： A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm−3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.

摘要翻译： 碳化硅单晶包括氮作为掺杂剂和铝作为掺杂剂。 氮浓度为2×10 19 cm -3以上，铝浓度与氮浓度的比例在5％〜40％的范围内。

公开(公告)号：US08105927B2

公开(公告)日：2012-01-31

申请号：US12716916

申请日：2010-03-03

申请人： Ken-ichi Nonaka ,  Hideki Hashimoto ,  Seiichi Yokoyama ,  Hiroaki Iwakuro ,  Koichi Nishikawa ,  Masaaki Shimizu ,  Yusuke Fukuda

发明人： Ken-ichi Nonaka ,  Hideki Hashimoto ,  Seiichi Yokoyama ,  Hiroaki Iwakuro ,  Koichi Nishikawa ,  Masaaki Shimizu ,  Yusuke Fukuda

IPC分类号： H01L21/425

CPC分类号： H01L29/8083 ,  H01L21/0465 ,  H01L21/266 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

摘要翻译： 公开了一种用于制造离子注入掩模的方法，其包括以下步骤：在半导体衬底的整个表面上形成氧化膜作为保护膜; 在氧化膜上形成薄金属膜; 以及在所述薄金属膜上形成由离子抑制金属构成的离子抑制层。 所获得的离子注入掩模用于形成更深的选择性导电区域。

公开(公告)号：US5090508A

公开(公告)日：1992-02-25

申请号：US452224

申请日：1989-12-18

申请人： Koichi Nishikawa

发明人： Koichi Nishikawa

IPC分类号： B60S5/00 ,  B60S13/02 ,  B65G47/80 ,  B66F7/06

CPC分类号： B66F7/0666 ,  B60S13/02

摘要： An automobile servicing apparatus includes a turntable which is rotatably supported and which is provided with a pair of retractable lift mechanisms. The turntable is also provided with a pair of storing spaces defined below its top surface for supporting thereon an automobile to be serviced. Each of the lift mechanisms is provided with a top flat plate which contacts the underside of the automobile when lifting and which is set in flush with the top surface of the turntable when set in its retracted position. Thus, there is provided a completely flat surface without any big holes when the lift mechanisms are set in their retracted position.

摘要翻译： 一种汽车维修装置，包括可旋转地支撑的转盘，并且设置有一对可伸缩提升机构。 转盘还设置有一对在其顶表面下方限定的储存空间，用于支撑待维修的汽车。 每个提升机构设置有顶部平板，其在提升时接触汽车的下侧，并且当设置在其缩回位置时与顶板的顶表面齐平。 因此，当提升机构设置在其缩回位置时，提供了完全平坦的表面，没有任何大的孔。

公开(公告)号：US4741157A

公开(公告)日：1988-05-03

申请号：US33978

申请日：1987-04-01

申请人： Koichi Nishikawa

发明人： Koichi Nishikawa

IPC分类号： F03B13/24 ,  F03B13/14 ,  F03B13/12

CPC分类号： F03B13/142 ,  F05B2240/93 ,  Y02E10/32 ,  Y02E10/38

摘要： A wave-activated power generating apparatus includes a generally L-shaped duct including a vertically extending portion and a horizontally extending portion and a floatable main body fixedly attached to the duct. The floatable main body is provided such that it is located rearwardly of the vertically extending portion of the duct when the apparatus is set in position floating on the water surface. The horizontally extending portion is in fluidic communication with the vertically extending portion and has an open rear end which is submerged underwater in normal operating condition. Because of the particular arrangement of the main body with respect to the vertically extending portion of the duct, the apparatus is subjected to pitching motion vigorously, which allows to obtain an increased power output. In addition, the water column is ejected in the form of a jet stream in the rearward direction, which contributes to mitigate the mooring force requirements.

摘要翻译： 波动发电装置包括大致L形的管道，其包括垂直延伸部分和水平延伸部分，以及固定地附接到管道的可浮动主体。 可浮动主体被设置成当设备被置于浮动在水面上的位置时位于管道的垂直延伸部分的后方。 水平延伸部分与垂直延伸部分流体连通，并具有在正常操作状态下浸没在水中的开放后端。 由于主体相对于管道的垂直延伸部分的特定布置，该装置剧烈地经受俯仰运动，这允许获得增加的功率输出。 此外，水柱以向后方向的喷射流的形式喷射，这有助于减轻系泊力的要求。

公开(公告)号：US08797847B2

公开(公告)日：2014-08-05

申请号：US13525729

申请日：2012-06-18

申请人： Koichi Nishikawa

发明人： Koichi Nishikawa

IPC分类号： H04L12/42

CPC分类号： H04L12/42 ,  H04L41/06 ,  H04L43/0811 ,  H04L43/0817

摘要： The network relay device is provided. The network relay device includes: a plurality of ports, each being configured to be connectable with one physical line; a virtual line controller configured to treat a plurality of physical lines, which are respectively connected with the plurality of ports, to constitute a virtual line; and a status check frame controller configured to send via the virtual line a status check frame for use in checking status of a network, which the network relay device is connected with via the virtual line, wherein the status check frame controller changes a frame-sending port to be used to send a next status check frame, in order to avoid continuously using an identical port as both a frame-sending port to send the status check frame and a frame-receiving port to receive the status check frame from another network relay device.

摘要翻译： 提供网络中继设备。 网络中继装置包括：多个端口，每个端口被配置为可与一条物理线路连接; 虚拟线路控制器，被配置为处理分别与所述多个端口连接的多条物理线路，以构成虚拟线路; 以及状态检查帧控制器，被配置为经由所述虚拟线路发送用于检查所述网络中继设备经由所述虚拟线路连接的网络的状态的状态检查帧，其中所述状态检查帧控制器改变帧发送 端口用于发送下一个状态检查帧，以避免连续使用相同的端口作为帧发送端口发送状态检查帧和帧接收端口，以从另一个网络中继接收状态检查帧 设备。

公开(公告)号：US20120325138A1

公开(公告)日：2012-12-27

申请号：US13527198

申请日：2012-06-19

申请人： Kunihiko SUZUKI ,  Hideki Ito ,  Naohisa Ikeya ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiko Ito ,  Masami Naito ,  Hiroaki Fujibayashi ,  Ayumu Adachi ,  Koichi Nishikawa

发明人： Kunihiko SUZUKI ,  Hideki Ito ,  Naohisa Ikeya ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiko Ito ,  Masami Naito ,  Hiroaki Fujibayashi ,  Ayumu Adachi ,  Koichi Nishikawa

IPC分类号： C30B25/10

CPC分类号： C30B25/10

摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

摘要翻译： 一种成膜装置和方法，包括：用于将反应气体供应的成膜室，设置在成膜室的内壁和用于进行成膜工艺的空间之间的圆柱形衬套，主加热器 用于从底侧加热设置在衬套内的衬底，设置在衬套和内壁之间的副加热器组，用于从顶侧加热衬底，其中主加热器和次加热器组是电阻的 加热器，其中所述副加热器组具有设置在与所述基板最靠近的位置的第一副加热器，以及设置在所述第一子加热器上方的第二副加热器，其中所述第一副加热器将所述基板与 主加热器，第二分热器以比第一副加热器低的输出加热衬套，其中主加热器，第一副加热器和第二副加热器的每个温度被单独控制。

公开(公告)号：US20100159653A1

公开(公告)日：2010-06-24

申请号：US12716916

申请日：2010-03-03

申请人： Ken-ichi NONAKA ,  Hideki HASHIMOTO ,  Seiichi YOKOYAMA ,  Hiroaki IWAKURO ,  Koichi NISHIKAWA ,  Masaaki SHIMIZU ,  Yusuke FUKUDA

发明人： Ken-ichi NONAKA ,  Hideki HASHIMOTO ,  Seiichi YOKOYAMA ,  Hiroaki IWAKURO ,  Koichi NISHIKAWA ,  Masaaki SHIMIZU ,  Yusuke FUKUDA

IPC分类号： H01L21/336 ,  H01L21/314

CPC分类号： H01L29/8083 ,  H01L21/0465 ,  H01L21/266 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

摘要翻译： 公开了一种用于制造离子注入掩模的方法，其包括以下步骤：在半导体衬底的整个表面上形成氧化膜作为保护膜; 在氧化膜上形成薄金属膜; 以及在所述薄金属膜上形成由离子抑制金属构成的离子抑制层。 所获得的离子注入掩模用于形成更深的选择性导电区域。

公开(公告)号：US07709862B2

公开(公告)日：2010-05-04

申请号：US11496627

申请日：2006-08-01

申请人： Ken-ichi Nonaka ,  Hideki Hashimoto ,  Seiichi Yokoyama ,  Hiroaki Iwakuro ,  Koichi Nishikawa ,  Masaaki Shimizu ,  Yusuke Fukuda

发明人： Ken-ichi Nonaka ,  Hideki Hashimoto ,  Seiichi Yokoyama ,  Hiroaki Iwakuro ,  Koichi Nishikawa ,  Masaaki Shimizu ,  Yusuke Fukuda

IPC分类号： H01L29/76

CPC分类号： H01L29/8083 ,  H01L21/0465 ,  H01L21/266 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

摘要翻译： 公开了一种用于制造离子注入掩模的方法，其包括以下步骤：在半导体衬底的整个表面上形成氧化膜作为保护膜; 在氧化膜上形成薄金属膜; 以及在所述薄金属膜上形成由离子抑制金属构成的离子抑制层。 所获得的离子注入掩模用于形成更深的选择性导电区域。

公开(公告)号：US20080052901A1

公开(公告)日：2008-03-06

申请号：US11889403

申请日：2007-08-13

申请人： Koichi Nishikawa ,  Masaaki Shimizu ,  Kenichi Nonaka ,  Seiichi Yokoyama ,  Hideki Hashimoto

发明人： Koichi Nishikawa ,  Masaaki Shimizu ,  Kenichi Nonaka ,  Seiichi Yokoyama ,  Hideki Hashimoto

IPC分类号： H05K3/00 ,  H05B3/06

CPC分类号： H01L21/67115 ,  H01L21/67103 ,  H01L21/68721 ,  H01L29/1608 ,  H01L29/6606 ,  Y10T29/49117 ,  Y10T29/49124

摘要： A method of manufacturing a semiconductor device, includes increasing adherence between a susceptor as a heating element, and a semiconductor substrate disposed on the susceptor, by using an adherence increasing mechanism, or increasing heat transmitted to a semiconductor substrate, which is disposed on a susceptor as a heating element, by using a transmitted-heat increasing mechanism; and heating the semiconductor substrate to have a predetermined temperature by heating the susceptor. The adherence increasing mechanism may include the susceptor and one of a heavy-weight stone disposed on the semiconductor substrate, a cap disposed on the semiconductor substrate and engaged with the susceptor, and an adhesive layer provided between the susceptor and the semiconductor substrate. The transmitted-heat increasing mechanism may include the susceptor and small pieces which are disposed on the semiconductor substrate and have radiated-light absorption ability. The susceptor may hold a plurality of the semiconductor substrates in a stacked form.

摘要翻译： 一种制造半导体器件的方法包括通过使用附着增加机构增加作为加热元件的基座和设置在基座上的半导体基板之间的粘附性，或者增加传输到半导体基板的热量，该半导体基板设置在基座 作为加热元件，通过使用透热增加机构; 并且通过加热所述基座来加热所述半导体衬底以具有预定温度。 附着增加机构可以包括基座和设置在半导体衬底上的重量级的石块之一，设置在半导体衬底上并与基座接合的帽以及设置在基座和半导体衬底之间的粘合剂层。 透热增加机构可以包括设置在半导体衬底上并具有辐射光吸收能力的基座和小片。 基座可以以堆叠的形式保持多个半导体衬底。